JPS5727213A - Dielectric multilayer film mirror - Google Patents
Dielectric multilayer film mirrorInfo
- Publication number
- JPS5727213A JPS5727213A JP10295380A JP10295380A JPS5727213A JP S5727213 A JPS5727213 A JP S5727213A JP 10295380 A JP10295380 A JP 10295380A JP 10295380 A JP10295380 A JP 10295380A JP S5727213 A JPS5727213 A JP S5727213A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- layer
- dielectric multilayer
- dielectric
- multilayer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
- G02B5/0833—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
PURPOSE:To obtain a dielectric multilayer mirror having a high reflection factor and a wide reflected wave length area, by a few layers, by preparing a layer having a low refractive index, by use of SiO2, and preparing a layer having a high refractive index, by use of amorphous Si(a-Si). CONSTITUTION:A dielectric multilayer mirror consisting of 4 dielectric layers is obtained by forming alternately a dielectric layer 21 having a low refractive index, consisting of SiO2, and a dielectric layer 22 having a high refractive index, consisting of a-Si, which has been prepared under the vacuum condition for forming an amorphous a-Si layer having a high refractive index, on a GaAs substrate 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10295380A JPS5727213A (en) | 1980-07-26 | 1980-07-26 | Dielectric multilayer film mirror |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10295380A JPS5727213A (en) | 1980-07-26 | 1980-07-26 | Dielectric multilayer film mirror |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5727213A true JPS5727213A (en) | 1982-02-13 |
Family
ID=14341168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10295380A Pending JPS5727213A (en) | 1980-07-26 | 1980-07-26 | Dielectric multilayer film mirror |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5727213A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6077480A (en) * | 1983-10-04 | 1985-05-02 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPH0246789A (en) * | 1988-07-01 | 1990-02-16 | Philips Gloeilampenfab:Nv | Phi coating of dfb/dbr laser diode |
JPH0252479A (en) * | 1988-08-16 | 1990-02-22 | Mitsubishi Kasei Corp | Etched-mirror type compound semiconductor laser device |
WO2002041049A3 (en) * | 2000-11-17 | 2002-07-25 | Tebaid | Mirror with highly selective reflection band |
JP2016186539A (en) * | 2015-03-27 | 2016-10-27 | 株式会社豊田中央研究所 | Optical filter and optical measurement apparatus |
-
1980
- 1980-07-26 JP JP10295380A patent/JPS5727213A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6077480A (en) * | 1983-10-04 | 1985-05-02 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPH0246789A (en) * | 1988-07-01 | 1990-02-16 | Philips Gloeilampenfab:Nv | Phi coating of dfb/dbr laser diode |
JPH0252479A (en) * | 1988-08-16 | 1990-02-22 | Mitsubishi Kasei Corp | Etched-mirror type compound semiconductor laser device |
WO2002041049A3 (en) * | 2000-11-17 | 2002-07-25 | Tebaid | Mirror with highly selective reflection band |
JP2016186539A (en) * | 2015-03-27 | 2016-10-27 | 株式会社豊田中央研究所 | Optical filter and optical measurement apparatus |
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