DE60027949D1 - Optische Halbleitervorrichtung - Google Patents

Optische Halbleitervorrichtung

Info

Publication number
DE60027949D1
DE60027949D1 DE60027949T DE60027949T DE60027949D1 DE 60027949 D1 DE60027949 D1 DE 60027949D1 DE 60027949 T DE60027949 T DE 60027949T DE 60027949 T DE60027949 T DE 60027949T DE 60027949 D1 DE60027949 D1 DE 60027949D1
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60027949T
Other languages
English (en)
Other versions
DE60027949T2 (de
Inventor
Kenji Shimoyama
Nobuyuki Hosoi
Kazumasa Kiyomi
Yoshihito Sato
Satosi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE60027949D1 publication Critical patent/DE60027949D1/de
Application granted granted Critical
Publication of DE60027949T2 publication Critical patent/DE60027949T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60027949T 1999-02-23 2000-02-23 Optische Halbleitervorrichtung Expired - Lifetime DE60027949T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4512399 1999-02-23
JP4506799 1999-02-23
JP4512399 1999-02-23
JP4506799 1999-02-23
JP7642199 1999-03-19
JP7642199 1999-03-19

Publications (2)

Publication Number Publication Date
DE60027949D1 true DE60027949D1 (de) 2006-06-22
DE60027949T2 DE60027949T2 (de) 2007-01-04

Family

ID=27292107

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60027949T Expired - Lifetime DE60027949T2 (de) 1999-02-23 2000-02-23 Optische Halbleitervorrichtung

Country Status (3)

Country Link
US (1) US6807213B1 (de)
EP (1) EP1039599B1 (de)
DE (1) DE60027949T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798815B2 (en) 2002-04-24 2004-09-28 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
JP4731913B2 (ja) 2003-04-25 2011-07-27 株式会社半導体エネルギー研究所 パターンの形成方法および半導体装置の製造方法
US7301979B2 (en) 2003-05-22 2007-11-27 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
KR100495220B1 (ko) * 2003-06-25 2005-06-14 삼성전기주식회사 고차모드 흡수층을 갖는 반도체 레이저 다이오드
US7462514B2 (en) * 2004-03-03 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US20050196710A1 (en) * 2004-03-04 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
US8158517B2 (en) 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
JP2006278661A (ja) * 2005-03-29 2006-10-12 Opnext Japan Inc 光半導体素子及びその製造方法並びに光半導体装置
JP2009033009A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 半導体レーザ装置及びその製造方法
JP2009071172A (ja) * 2007-09-14 2009-04-02 Sony Corp 半導体発光素子及びその製造方法、並びに、下地層の形成方法
JP2010027935A (ja) * 2008-07-23 2010-02-04 Sony Corp 半導体レーザ、光ディスク装置および光ピックアップ
US7680383B1 (en) * 2008-08-26 2010-03-16 Massachusetts Institute Of Technology Semiconductor-based broadband modulators
JP5715332B2 (ja) * 2009-08-31 2015-05-07 株式会社東芝 半導体発光素子
JP5496623B2 (ja) * 2009-11-26 2014-05-21 スタンレー電気株式会社 光半導体装置
JP5276030B2 (ja) * 2010-02-19 2013-08-28 古河電気工業株式会社 半導体レーザおよび半導体レーザモジュール
JP2012015266A (ja) * 2010-06-30 2012-01-19 Sony Corp 半導体光増幅器
US9412840B1 (en) 2015-05-06 2016-08-09 International Business Machines Corporation Sacrificial layer for replacement metal semiconductor alloy contact formation
US11588302B2 (en) * 2019-06-21 2023-02-21 Seagate Technology Llc Optical switches

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3884881T2 (de) * 1987-08-04 1994-02-10 Sharp Kk Halbleiterlaservorrichtung.
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JP3429407B2 (ja) * 1996-01-19 2003-07-22 シャープ株式会社 半導体レーザ装置およびその製造方法
EP0867949B1 (de) * 1997-03-26 2007-01-24 Mitsubishi Chemical Corporation Lichtemittierende Halbleitervorrichtung
EP0989643B1 (de) * 1998-09-25 2006-08-09 Mitsubishi Chemical Corporation Halbleiterlichtstrahler und dessen Herstellungsverfahren
EP1130726A3 (de) * 2000-01-28 2003-04-23 The Furukawa Electric Co., Ltd. Halbleiterlaservorrichtung mit verteilter Rückkopplung und Mehrwellenlängenvielfachlaser

Also Published As

Publication number Publication date
EP1039599B1 (de) 2006-05-17
US6807213B1 (en) 2004-10-19
EP1039599A3 (de) 2003-08-06
EP1039599A2 (de) 2000-09-27
DE60027949T2 (de) 2007-01-04

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Legal Events

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