DE2753613C3 - Isolierschicht-Feldeffekttransistor - Google Patents

Isolierschicht-Feldeffekttransistor

Info

Publication number
DE2753613C3
DE2753613C3 DE2753613A DE2753613A DE2753613C3 DE 2753613 C3 DE2753613 C3 DE 2753613C3 DE 2753613 A DE2753613 A DE 2753613A DE 2753613 A DE2753613 A DE 2753613A DE 2753613 C3 DE2753613 C3 DE 2753613C3
Authority
DE
Germany
Prior art keywords
region
drain
field effect
effect transistor
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2753613A
Other languages
German (de)
English (en)
Other versions
DE2753613B2 (de
DE2753613A1 (de
Inventor
Hidefumi Takasaki Gunma Itoh
Yukio Toyokawa Aichi Shirota
Toru Toyabe
Isao Tokyo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2753613A1 publication Critical patent/DE2753613A1/de
Publication of DE2753613B2 publication Critical patent/DE2753613B2/de
Application granted granted Critical
Publication of DE2753613C3 publication Critical patent/DE2753613C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE2753613A 1976-12-01 1977-12-01 Isolierschicht-Feldeffekttransistor Expired DE2753613C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14334976A JPS5368581A (en) 1976-12-01 1976-12-01 Semiconductor device

Publications (3)

Publication Number Publication Date
DE2753613A1 DE2753613A1 (de) 1978-06-08
DE2753613B2 DE2753613B2 (de) 1980-03-06
DE2753613C3 true DE2753613C3 (de) 1983-12-29

Family

ID=15336712

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2753613A Expired DE2753613C3 (de) 1976-12-01 1977-12-01 Isolierschicht-Feldeffekttransistor

Country Status (4)

Country Link
US (1) US4172260A (enExample)
JP (1) JPS5368581A (enExample)
DE (1) DE2753613C3 (enExample)
NL (1) NL7713333A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3709708A1 (de) * 1986-03-31 1987-10-08 Toshiba Kawasaki Kk Feldeffekttransistor mit gering dotierter drainanordnung und verfahren zur herstellung desselben
DE19711729B4 (de) * 1996-03-22 2017-10-26 Fuji Electric Co., Ltd. Horizontal-Feldeffekttransistor und Verfahren zu seiner Herstellung

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JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
JPS54154977A (en) * 1978-05-29 1979-12-06 Fujitsu Ltd Semiconductor device and its manufacture
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
DE2852621C4 (de) * 1978-12-05 1995-11-30 Siemens Ag Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
DE2855844C2 (de) * 1978-12-22 1984-06-07 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltung für einen Verstärker mit einem Feldeffekttransistor
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
US4735914A (en) * 1979-03-28 1988-04-05 Honeywell Inc. FET for high reverse bias voltage and geometrical design for low on resistance
US5187552A (en) * 1979-03-28 1993-02-16 Hendrickson Thomas E Shielded field-effect transistor devices
DE2921600A1 (de) * 1979-05-28 1980-12-04 Siemens Ag Feldeffekttransistor mit kurzer kanallaenge
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS5654069A (en) * 1979-10-08 1981-05-13 Hitachi Ltd High withstand voltage mos field-effect semiconductor device
DE3046749C2 (de) * 1979-12-10 1986-01-16 Sharp K.K., Osaka MOS-Transistor für hohe Betriebsspannungen
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56161676A (en) 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
FR2499769A1 (fr) * 1981-02-06 1982-08-13 Efcis Transistor a effet de champ a grille isolee ayant une capacite parasite reduite et procede de fabrication
US4429237A (en) 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver
NL8103218A (nl) * 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
US4490629A (en) * 1982-05-10 1984-12-25 American Microsystems, Inc. High voltage circuits in low voltage CMOS process
DE3219888A1 (de) * 1982-05-27 1983-12-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Planares halbleiterbauelement und verfahren zur herstellung
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
US4574209A (en) * 1982-06-21 1986-03-04 Eaton Corporation Split gate EFET and circuitry
US4571606A (en) * 1982-06-21 1986-02-18 Eaton Corporation High density, high voltage power FET
NL8203870A (nl) * 1982-10-06 1984-05-01 Philips Nv Halfgeleiderinrichting.
JPS59188976A (ja) * 1983-04-12 1984-10-26 Matsushita Electric Ind Co Ltd Ｍｏｓ電界効果トランジスタ
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
EP0160183A3 (en) * 1984-05-03 1986-12-03 Rockwell International Corporation High voltage mos field effect transistor
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
DE3581797D1 (de) * 1984-12-27 1991-03-28 Toshiba Kawasaki Kk Misfet mit niedrigdotiertem drain und verfahren zu seiner herstellung.
JPS61216364A (ja) * 1985-03-20 1986-09-26 Fujitsu Ltd 半導体装置
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
US4920393A (en) * 1987-01-08 1990-04-24 Texas Instruments Incorporated Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage
US4801555A (en) * 1987-01-14 1989-01-31 Motorola, Inc. Double-implant process for forming graded source/drain regions
US5024960A (en) * 1987-06-16 1991-06-18 Texas Instruments Incorporated Dual LDD submicron CMOS process for making low and high voltage transistors with common gate
US4818711A (en) * 1987-08-28 1989-04-04 Intel Corporation High quality oxide on an ion implanted polysilicon surface
US4890146A (en) * 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method
JP2760068B2 (ja) * 1989-07-18 1998-05-28 ソニー株式会社 Ｍｉｓ型半導体装置の製造方法
JP2901091B2 (ja) * 1990-09-27 1999-06-02 株式会社日立製作所 半導体装置
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
JPH05218070A (ja) * 1992-01-30 1993-08-27 Sanyo Electric Co Ltd Ｍｏｓ電界効果半導体装置
EP0711457A1 (en) * 1993-07-29 1996-05-15 SIEMENS COMPONENTS, Inc. A reverse field plate, junction-terminating structure
US5750414A (en) * 1993-09-29 1998-05-12 Siemens Components, Inc. Method of fabricating a semiconductor device
US5404094A (en) * 1994-03-18 1995-04-04 Holophane Lighting, Inc. Wide input power supply and method of converting therefor
KR100189964B1 (ko) 1994-05-16 1999-06-01 윤종용 고전압 트랜지스터 및 그 제조방법
TW288200B (en) * 1995-06-28 1996-10-11 Mitsubishi Electric Corp Semiconductor device and process thereof
US5759897A (en) * 1996-09-03 1998-06-02 Advanced Micro Devices, Inc. Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5869866A (en) 1996-12-06 1999-02-09 Advanced Micro Devices, Inc. Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions
US5766969A (en) * 1996-12-06 1998-06-16 Advanced Micro Devices, Inc. Multiple spacer formation/removal technique for forming a graded junction
US5869879A (en) * 1996-12-06 1999-02-09 Advanced Micro Devices, Inc. CMOS integrated circuit having a sacrificial metal spacer for producing graded NMOS source/drain junctions dissimilar from PMOS source/drain junctions
US5895955A (en) * 1997-01-10 1999-04-20 Advanced Micro Devices, Inc. MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch
US5793089A (en) * 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon
KR100244282B1 (ko) * 1997-08-25 2000-02-01 김영환 고전압 트랜지스터의 구조 및 제조 방법
US6124610A (en) * 1998-06-26 2000-09-26 Advanced Micro Devices, Inc. Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant
US6111291A (en) * 1998-06-26 2000-08-29 Elmos Semiconductor Ag MOS transistor with high voltage sustaining capability
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
DE10137343C1 (de) * 2001-07-31 2002-09-12 Infineon Technologies Ag Halbleiterstruktur mit Feldplatte
DE10206739C1 (de) * 2002-02-18 2003-08-21 Infineon Technologies Ag Transistorbauelement
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
JP5391447B2 (ja) * 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
US8193046B2 (en) 2009-11-02 2012-06-05 Analog Devices, Inc. Junction field effect transistor
US8390039B2 (en) * 2009-11-02 2013-03-05 Analog Devices, Inc. Junction field effect transistor
JP2013093482A (ja) * 2011-10-27 2013-05-16 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
US10002957B2 (en) 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
KR101229392B1 (ko) * 2012-09-12 2013-02-05 주식회사 아이엠헬스케어 오믹 접합을 이용하는 ｆｅｔ 기반 바이오 센서
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用
KR20220093014A (ko) 2018-05-08 2022-07-04 베이리스 메디컬 컴퍼니 아이엔씨. 조직을 천공하기 위한 방법 및 장치

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GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
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JPS49105490A (enExample) * 1973-02-07 1974-10-05
JPS5435757B2 (enExample) * 1974-02-15 1979-11-05
JPS5193878A (enExample) * 1975-02-17 1976-08-17
JPS5942467B2 (ja) * 1975-11-28 1984-10-15 株式会社日立製作所 ハンドウタイソウチ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3709708A1 (de) * 1986-03-31 1987-10-08 Toshiba Kawasaki Kk Feldeffekttransistor mit gering dotierter drainanordnung und verfahren zur herstellung desselben
DE19711729B4 (de) * 1996-03-22 2017-10-26 Fuji Electric Co., Ltd. Horizontal-Feldeffekttransistor und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
DE2753613B2 (de) 1980-03-06
JPS5368581A (en) 1978-06-19
US4172260A (en) 1979-10-23
DE2753613A1 (de) 1978-06-08
NL7713333A (nl) 1978-06-05
JPS5525513B2 (enExample) 1980-07-07

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8228 New agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN

8281 Inventor (new situation)

Free format text: OKABE, TAKEAKI, KOKUBUNJI, TOKYO, JP YOSHIDA, ISAO, TOKYO, JP OCHI, SHIKAYUKI, AKISHIMA, TOKYO, JP ITOH, HIDEFUMI, TAKASAKI, GUNMA, JP FURUMI, MASATOMO, FUCHU, TOKYO, JP TOYABE, TORU KATSUEDA, MINEO, KOKUBUNJI, TOKYO, JP SHIROTA, YUKIO, TOYOKAWA, AICHI, JP

C3 Grant after two publication steps (3rd publication)