NL7713333A - Veldeffecttransistor met geisoleerde poort. - Google Patents

Veldeffecttransistor met geisoleerde poort.

Info

Publication number
NL7713333A
NL7713333A NL7713333A NL7713333A NL7713333A NL 7713333 A NL7713333 A NL 7713333A NL 7713333 A NL7713333 A NL 7713333A NL 7713333 A NL7713333 A NL 7713333A NL 7713333 A NL7713333 A NL 7713333A
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
insulated port
insulated
port
Prior art date
Application number
NL7713333A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7713333A publication Critical patent/NL7713333A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
NL7713333A 1976-12-01 1977-12-01 Veldeffecttransistor met geisoleerde poort. NL7713333A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14334976A JPS5368581A (en) 1976-12-01 1976-12-01 Semiconductor device

Publications (1)

Publication Number Publication Date
NL7713333A true NL7713333A (nl) 1978-06-05

Family

ID=15336712

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7713333A NL7713333A (nl) 1976-12-01 1977-12-01 Veldeffecttransistor met geisoleerde poort.

Country Status (4)

Country Link
US (1) US4172260A (nl)
JP (1) JPS5368581A (nl)
DE (1) DE2753613C3 (nl)
NL (1) NL7713333A (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399126A1 (fr) * 1977-04-15 1979-02-23 Hitachi Ltd Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier

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US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
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IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
DE3581797D1 (de) * 1984-12-27 1991-03-28 Toshiba Kawasaki Kk Misfet mit niedrigdotiertem drain und verfahren zu seiner herstellung.
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JPS62229976A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体装置およびその製造方法
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
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US4890146A (en) * 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
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JP2901091B2 (ja) * 1990-09-27 1999-06-02 株式会社日立製作所 半導体装置
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
JPH05218070A (ja) * 1992-01-30 1993-08-27 Sanyo Electric Co Ltd Ｍｏｓ電界効果半導体装置
JPH09501018A (ja) * 1993-07-29 1997-01-28 シーメンス コンポーネンツ インコーポレイテッド リバースフィールドプレート、接合終端構造
US5750414A (en) * 1993-09-29 1998-05-12 Siemens Components, Inc. Method of fabricating a semiconductor device
US5404094A (en) * 1994-03-18 1995-04-04 Holophane Lighting, Inc. Wide input power supply and method of converting therefor
KR100189964B1 (ko) 1994-05-16 1999-06-01 윤종용 고전압 트랜지스터 및 그 제조방법
TW288200B (en) * 1995-06-28 1996-10-11 Mitsubishi Electric Corp Semiconductor device and process thereof
JP3185656B2 (ja) * 1996-03-22 2001-07-11 富士電機株式会社 横型電界効果トランジスタおよびその製造方法
US5759897A (en) * 1996-09-03 1998-06-02 Advanced Micro Devices, Inc. Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5766969A (en) * 1996-12-06 1998-06-16 Advanced Micro Devices, Inc. Multiple spacer formation/removal technique for forming a graded junction
US5869866A (en) 1996-12-06 1999-02-09 Advanced Micro Devices, Inc. Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions
US5869879A (en) * 1996-12-06 1999-02-09 Advanced Micro Devices, Inc. CMOS integrated circuit having a sacrificial metal spacer for producing graded NMOS source/drain junctions dissimilar from PMOS source/drain junctions
US5895955A (en) * 1997-01-10 1999-04-20 Advanced Micro Devices, Inc. MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch
US5793089A (en) * 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon
KR100244282B1 (ko) * 1997-08-25 2000-02-01 김영환 고전압 트랜지스터의 구조 및 제조 방법
US6124610A (en) 1998-06-26 2000-09-26 Advanced Micro Devices, Inc. Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant
US6111291A (en) * 1998-06-26 2000-08-29 Elmos Semiconductor Ag MOS transistor with high voltage sustaining capability
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
DE10137343C1 (de) * 2001-07-31 2002-09-12 Infineon Technologies Ag Halbleiterstruktur mit Feldplatte
DE10206739C1 (de) * 2002-02-18 2003-08-21 Infineon Technologies Ag Transistorbauelement
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
JP5391447B2 (ja) * 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
US8390039B2 (en) * 2009-11-02 2013-03-05 Analog Devices, Inc. Junction field effect transistor
US8193046B2 (en) 2009-11-02 2012-06-05 Analog Devices, Inc. Junction field effect transistor
JP2013093482A (ja) * 2011-10-27 2013-05-16 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
US10002957B2 (en) 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
KR101229392B1 (ko) * 2012-09-12 2013-02-05 주식회사 아이엠헬스케어 오믹 접합을 이용하는 ｆｅｔ 기반 바이오 센서
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用
BR112020022839A2 (pt) 2018-05-08 2021-04-20 Baylis Medical Company Inc. métodos e dispositivos para puncionamento de tecidos

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USB421061I5 (nl) * 1964-12-24
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399126A1 (fr) * 1977-04-15 1979-02-23 Hitachi Ltd Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier

Also Published As

Publication number Publication date
DE2753613A1 (de) 1978-06-08
JPS5525513B2 (nl) 1980-07-07
JPS5368581A (en) 1978-06-19
DE2753613C3 (de) 1983-12-29
US4172260A (en) 1979-10-23
DE2753613B2 (de) 1980-03-06

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BC A request for examination has been filed
BV The patent application has lapsed