JPS5368581A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5368581A JPS5368581A JP14334976A JP14334976A JPS5368581A JP S5368581 A JPS5368581 A JP S5368581A JP 14334976 A JP14334976 A JP 14334976A JP 14334976 A JP14334976 A JP 14334976A JP S5368581 A JPS5368581 A JP S5368581A
- Authority
- JP
- Japan
- Prior art keywords
- source electrode
- effect
- semiconductor device
- field
- easing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000694 effects Effects 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14334976A JPS5368581A (en) | 1976-12-01 | 1976-12-01 | Semiconductor device |
US05/853,548 US4172260A (en) | 1976-12-01 | 1977-11-21 | Insulated gate field effect transistor with source field shield extending over multiple region channel |
NL7713333A NL7713333A (nl) | 1976-12-01 | 1977-12-01 | Veldeffecttransistor met geisoleerde poort. |
DE2753613A DE2753613C3 (de) | 1976-12-01 | 1977-12-01 | Isolierschicht-Feldeffekttransistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14334976A JPS5368581A (en) | 1976-12-01 | 1976-12-01 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5368581A true JPS5368581A (en) | 1978-06-19 |
JPS5525513B2 JPS5525513B2 (ja) | 1980-07-07 |
Family
ID=15336712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14334976A Granted JPS5368581A (en) | 1976-12-01 | 1976-12-01 | Semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4172260A (ja) |
JP (1) | JPS5368581A (ja) |
DE (1) | DE2753613C3 (ja) |
NL (1) | NL7713333A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654069A (en) * | 1979-10-08 | 1981-05-13 | Hitachi Ltd | High withstand voltage mos field-effect semiconductor device |
JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS59188976A (ja) * | 1983-04-12 | 1984-10-26 | Matsushita Electric Ind Co Ltd | Mos電界効果トランジスタ |
US5198964A (en) * | 1990-09-27 | 1993-03-30 | Hitachi, Ltd. | Packaged semiconductor device and electronic device module including same |
JPH05218070A (ja) * | 1992-01-30 | 1993-08-27 | Sanyo Electric Co Ltd | Mos電界効果半導体装置 |
JP2002270830A (ja) * | 2001-03-12 | 2002-09-20 | Fuji Electric Co Ltd | 半導体装置 |
JP2013093482A (ja) * | 2011-10-27 | 2013-05-16 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
JPS54144183A (en) * | 1978-05-01 | 1979-11-10 | Handotai Kenkyu Shinkokai | Insulated gate type electrostatic induction transistor and semiconductor integrated circuit |
JPS54154977A (en) * | 1978-05-29 | 1979-12-06 | Fujitsu Ltd | Semiconductor device and its manufacture |
DE2834724A1 (de) * | 1978-08-08 | 1980-02-14 | Siemens Ag | Mos-feldeffekttransistoren fuer hoehere spannungen |
DE2852621C4 (de) * | 1978-12-05 | 1995-11-30 | Siemens Ag | Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone |
DE2855844C2 (de) * | 1978-12-22 | 1984-06-07 | Texas Instruments Deutschland Gmbh, 8050 Freising | Schaltung für einen Verstärker mit einem Feldeffekttransistor |
JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
US5187552A (en) * | 1979-03-28 | 1993-02-16 | Hendrickson Thomas E | Shielded field-effect transistor devices |
US4735914A (en) * | 1979-03-28 | 1988-04-05 | Honeywell Inc. | FET for high reverse bias voltage and geometrical design for low on resistance |
DE2921600A1 (de) * | 1979-05-28 | 1980-12-04 | Siemens Ag | Feldeffekttransistor mit kurzer kanallaenge |
JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
DE3046749C2 (de) * | 1979-12-10 | 1986-01-16 | Sharp K.K., Osaka | MOS-Transistor für hohe Betriebsspannungen |
US4455565A (en) * | 1980-02-22 | 1984-06-19 | Rca Corporation | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
JPS56161676A (en) | 1980-05-16 | 1981-12-12 | Japan Electronic Ind Dev Assoc<Jeida> | Electrode structure for thin film transistor |
FR2499769A1 (fr) * | 1981-02-06 | 1982-08-13 | Efcis | Transistor a effet de champ a grille isolee ayant une capacite parasite reduite et procede de fabrication |
NL8103218A (nl) * | 1981-07-06 | 1983-02-01 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
JPS5829548U (ja) * | 1981-08-20 | 1983-02-25 | トヨタ自動車株式会社 | フロントエンジン、フロントドライブ形式の車両におけるアンダ−ガ−ドの構造 |
US4490629A (en) * | 1982-05-10 | 1984-12-25 | American Microsystems, Inc. | High voltage circuits in low voltage CMOS process |
DE3219888A1 (de) * | 1982-05-27 | 1983-12-01 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planares halbleiterbauelement und verfahren zur herstellung |
US4571606A (en) * | 1982-06-21 | 1986-02-18 | Eaton Corporation | High density, high voltage power FET |
US4574209A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Split gate EFET and circuitry |
US4574208A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Raised split gate EFET and circuitry |
NL8203870A (nl) * | 1982-10-06 | 1984-05-01 | Philips Nv | Halfgeleiderinrichting. |
JPH0695563B2 (ja) * | 1985-02-01 | 1994-11-24 | 株式会社日立製作所 | 半導体装置 |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
EP0160183A3 (en) * | 1984-05-03 | 1986-12-03 | Rockwell International Corporation | High voltage mos field effect transistor |
IT1214805B (it) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown |
DE3581797D1 (de) * | 1984-12-27 | 1991-03-28 | Toshiba Kawasaki Kk | Misfet mit niedrigdotiertem drain und verfahren zu seiner herstellung. |
JPS61216364A (ja) * | 1985-03-20 | 1986-09-26 | Fujitsu Ltd | 半導体装置 |
JPS62229976A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS62274767A (ja) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | 高耐圧半導体装置及びその製造方法 |
US4920393A (en) * | 1987-01-08 | 1990-04-24 | Texas Instruments Incorporated | Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage |
US4801555A (en) * | 1987-01-14 | 1989-01-31 | Motorola, Inc. | Double-implant process for forming graded source/drain regions |
US5024960A (en) * | 1987-06-16 | 1991-06-18 | Texas Instruments Incorporated | Dual LDD submicron CMOS process for making low and high voltage transistors with common gate |
US4818711A (en) * | 1987-08-28 | 1989-04-04 | Intel Corporation | High quality oxide on an ion implanted polysilicon surface |
US4890146A (en) * | 1987-12-16 | 1989-12-26 | Siliconix Incorporated | High voltage level shift semiconductor device |
US4878100A (en) * | 1988-01-19 | 1989-10-31 | Texas Instruments Incorporated | Triple-implanted drain in transistor made by oxide sidewall-spacer method |
JP2760068B2 (ja) * | 1989-07-18 | 1998-05-28 | ソニー株式会社 | Mis型半導体装置の製造方法 |
US5246870A (en) * | 1991-02-01 | 1993-09-21 | North American Philips Corporation | Method for making an improved high voltage thin film transistor having a linear doping profile |
WO1995004374A1 (en) * | 1993-07-29 | 1995-02-09 | Siemens Components, Inc. | A reverse field plate, junction-terminating structure |
US5750414A (en) * | 1993-09-29 | 1998-05-12 | Siemens Components, Inc. | Method of fabricating a semiconductor device |
US5404094A (en) * | 1994-03-18 | 1995-04-04 | Holophane Lighting, Inc. | Wide input power supply and method of converting therefor |
KR100189964B1 (ko) | 1994-05-16 | 1999-06-01 | 윤종용 | 고전압 트랜지스터 및 그 제조방법 |
TW288200B (en) * | 1995-06-28 | 1996-10-11 | Mitsubishi Electric Corp | Semiconductor device and process thereof |
JP3185656B2 (ja) * | 1996-03-22 | 2001-07-11 | 富士電機株式会社 | 横型電界効果トランジスタおよびその製造方法 |
US5759897A (en) * | 1996-09-03 | 1998-06-02 | Advanced Micro Devices, Inc. | Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region |
US5869879A (en) * | 1996-12-06 | 1999-02-09 | Advanced Micro Devices, Inc. | CMOS integrated circuit having a sacrificial metal spacer for producing graded NMOS source/drain junctions dissimilar from PMOS source/drain junctions |
US5766969A (en) * | 1996-12-06 | 1998-06-16 | Advanced Micro Devices, Inc. | Multiple spacer formation/removal technique for forming a graded junction |
US5869866A (en) | 1996-12-06 | 1999-02-09 | Advanced Micro Devices, Inc. | Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions |
US5793089A (en) * | 1997-01-10 | 1998-08-11 | Advanced Micro Devices, Inc. | Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
US5895955A (en) * | 1997-01-10 | 1999-04-20 | Advanced Micro Devices, Inc. | MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch |
KR100244282B1 (ko) | 1997-08-25 | 2000-02-01 | 김영환 | 고전압 트랜지스터의 구조 및 제조 방법 |
US6124610A (en) * | 1998-06-26 | 2000-09-26 | Advanced Micro Devices, Inc. | Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant |
US6111291A (en) * | 1998-06-26 | 2000-08-29 | Elmos Semiconductor Ag | MOS transistor with high voltage sustaining capability |
DE10137343C1 (de) * | 2001-07-31 | 2002-09-12 | Infineon Technologies Ag | Halbleiterstruktur mit Feldplatte |
DE10206739C1 (de) | 2002-02-18 | 2003-08-21 | Infineon Technologies Ag | Transistorbauelement |
US7662698B2 (en) * | 2006-11-07 | 2010-02-16 | Raytheon Company | Transistor having field plate |
JP5391447B2 (ja) * | 2009-04-06 | 2014-01-15 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US8390039B2 (en) * | 2009-11-02 | 2013-03-05 | Analog Devices, Inc. | Junction field effect transistor |
US8193046B2 (en) | 2009-11-02 | 2012-06-05 | Analog Devices, Inc. | Junction field effect transistor |
US10002957B2 (en) | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
KR101229392B1 (ko) * | 2012-09-12 | 2013-02-05 | 주식회사 아이엠헬스케어 | 오믹 접합을 이용하는 fet 기반 바이오 센서 |
CN105742364A (zh) * | 2016-04-12 | 2016-07-06 | 中山大学 | 一种抑制有源沟道区光致漏电流产生的mos管及应用 |
JP7203343B2 (ja) | 2018-05-08 | 2023-01-13 | ベイリス メディカル カンパニー インコーポレイテッド | 組織を穿刺するための方法及びデバイス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB421061I5 (ja) * | 1964-12-24 | |||
GB1173150A (en) * | 1966-12-13 | 1969-12-03 | Associated Semiconductor Mft | Improvements in Insulated Gate Field Effect Transistors |
US3631312A (en) * | 1969-05-15 | 1971-12-28 | Nat Semiconductor Corp | High-voltage mos transistor method and apparatus |
US3600647A (en) * | 1970-03-02 | 1971-08-17 | Gen Electric | Field-effect transistor with reduced drain-to-substrate capacitance |
US3697827A (en) * | 1971-02-09 | 1972-10-10 | Unitrode Corp | Structure and formation of semiconductors with transverse conductivity gradients |
JPS49105490A (ja) * | 1973-02-07 | 1974-10-05 | ||
JPS5435757B2 (ja) * | 1974-02-15 | 1979-11-05 | ||
JPS5193878A (ja) * | 1975-02-17 | 1976-08-17 | ||
JPS5942467B2 (ja) * | 1975-11-28 | 1984-10-15 | 株式会社日立製作所 | ハンドウタイソウチ |
-
1976
- 1976-12-01 JP JP14334976A patent/JPS5368581A/ja active Granted
-
1977
- 1977-11-21 US US05/853,548 patent/US4172260A/en not_active Expired - Lifetime
- 1977-12-01 DE DE2753613A patent/DE2753613C3/de not_active Expired
- 1977-12-01 NL NL7713333A patent/NL7713333A/xx not_active Application Discontinuation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654069A (en) * | 1979-10-08 | 1981-05-13 | Hitachi Ltd | High withstand voltage mos field-effect semiconductor device |
JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPH0216021B2 (ja) * | 1980-05-30 | 1990-04-13 | Sharp Kk | |
JPS59188976A (ja) * | 1983-04-12 | 1984-10-26 | Matsushita Electric Ind Co Ltd | Mos電界効果トランジスタ |
US5198964A (en) * | 1990-09-27 | 1993-03-30 | Hitachi, Ltd. | Packaged semiconductor device and electronic device module including same |
JPH05218070A (ja) * | 1992-01-30 | 1993-08-27 | Sanyo Electric Co Ltd | Mos電界効果半導体装置 |
JP2002270830A (ja) * | 2001-03-12 | 2002-09-20 | Fuji Electric Co Ltd | 半導体装置 |
JP2013093482A (ja) * | 2011-10-27 | 2013-05-16 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5525513B2 (ja) | 1980-07-07 |
US4172260A (en) | 1979-10-23 |
DE2753613C3 (de) | 1983-12-29 |
DE2753613A1 (de) | 1978-06-08 |
DE2753613B2 (de) | 1980-03-06 |
NL7713333A (nl) | 1978-06-05 |
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