JPS5368581A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5368581A
JPS5368581A JP14334976A JP14334976A JPS5368581A JP S5368581 A JPS5368581 A JP S5368581A JP 14334976 A JP14334976 A JP 14334976A JP 14334976 A JP14334976 A JP 14334976A JP S5368581 A JPS5368581 A JP S5368581A
Authority
JP
Japan
Prior art keywords
source electrode
effect
semiconductor device
field
easing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14334976A
Other languages
English (en)
Other versions
JPS5525513B2 (ja
Inventor
Takeaki Okabe
Isao Yoshida
Shikayuki Ochi
Hideshi Ito
Masatomo Furuumi
Tatsu Toriyabe
Mineo Katsueda
Yukio Shirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14334976A priority Critical patent/JPS5368581A/ja
Priority to US05/853,548 priority patent/US4172260A/en
Priority to NL7713333A priority patent/NL7713333A/xx
Priority to DE2753613A priority patent/DE2753613C3/de
Publication of JPS5368581A publication Critical patent/JPS5368581A/ja
Publication of JPS5525513B2 publication Critical patent/JPS5525513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP14334976A 1976-12-01 1976-12-01 Semiconductor device Granted JPS5368581A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP14334976A JPS5368581A (en) 1976-12-01 1976-12-01 Semiconductor device
US05/853,548 US4172260A (en) 1976-12-01 1977-11-21 Insulated gate field effect transistor with source field shield extending over multiple region channel
NL7713333A NL7713333A (nl) 1976-12-01 1977-12-01 Veldeffecttransistor met geisoleerde poort.
DE2753613A DE2753613C3 (de) 1976-12-01 1977-12-01 Isolierschicht-Feldeffekttransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14334976A JPS5368581A (en) 1976-12-01 1976-12-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5368581A true JPS5368581A (en) 1978-06-19
JPS5525513B2 JPS5525513B2 (ja) 1980-07-07

Family

ID=15336712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14334976A Granted JPS5368581A (en) 1976-12-01 1976-12-01 Semiconductor device

Country Status (4)

Country Link
US (1) US4172260A (ja)
JP (1) JPS5368581A (ja)
DE (1) DE2753613C3 (ja)
NL (1) NL7713333A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654069A (en) * 1979-10-08 1981-05-13 Hitachi Ltd High withstand voltage mos field-effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS59188976A (ja) * 1983-04-12 1984-10-26 Matsushita Electric Ind Co Ltd Ｍｏｓ電界効果トランジスタ
US5198964A (en) * 1990-09-27 1993-03-30 Hitachi, Ltd. Packaged semiconductor device and electronic device module including same
JPH05218070A (ja) * 1992-01-30 1993-08-27 Sanyo Electric Co Ltd Ｍｏｓ電界効果半導体装置
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
JP2013093482A (ja) * 2011-10-27 2013-05-16 Renesas Electronics Corp 半導体装置および半導体装置の製造方法

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
JPS54154977A (en) * 1978-05-29 1979-12-06 Fujitsu Ltd Semiconductor device and its manufacture
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
DE2852621C4 (de) * 1978-12-05 1995-11-30 Siemens Ag Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
DE2855844C2 (de) * 1978-12-22 1984-06-07 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltung für einen Verstärker mit einem Feldeffekttransistor
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
US4735914A (en) * 1979-03-28 1988-04-05 Honeywell Inc. FET for high reverse bias voltage and geometrical design for low on resistance
US5187552A (en) * 1979-03-28 1993-02-16 Hendrickson Thomas E Shielded field-effect transistor devices
DE2921600A1 (de) * 1979-05-28 1980-12-04 Siemens Ag Feldeffekttransistor mit kurzer kanallaenge
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
DE3046749C2 (de) * 1979-12-10 1986-01-16 Sharp K.K., Osaka MOS-Transistor für hohe Betriebsspannungen
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56161676A (en) 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
FR2499769A1 (fr) * 1981-02-06 1982-08-13 Efcis Transistor a effet de champ a grille isolee ayant une capacite parasite reduite et procede de fabrication
NL8103218A (nl) * 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS5829548U (ja) * 1981-08-20 1983-02-25 トヨタ自動車株式会社 フロントエンジン、フロントドライブ形式の車両におけるアンダ−ガ−ドの構造
US4490629A (en) * 1982-05-10 1984-12-25 American Microsystems, Inc. High voltage circuits in low voltage CMOS process
DE3219888A1 (de) * 1982-05-27 1983-12-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Planares halbleiterbauelement und verfahren zur herstellung
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
US4571606A (en) * 1982-06-21 1986-02-18 Eaton Corporation High density, high voltage power FET
US4574209A (en) * 1982-06-21 1986-03-04 Eaton Corporation Split gate EFET and circuitry
NL8203870A (nl) * 1982-10-06 1984-05-01 Philips Nv Halfgeleiderinrichting.
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
EP0160183A3 (en) * 1984-05-03 1986-12-03 Rockwell International Corporation High voltage mos field effect transistor
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
EP0187016B1 (en) * 1984-12-27 1991-02-20 Kabushiki Kaisha Toshiba Misfet with lightly doped drain and method of manufacturing the same
JPS61216364A (ja) * 1985-03-20 1986-09-26 Fujitsu Ltd 半導体装置
JPS62229976A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体装置およびその製造方法
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
US4920393A (en) * 1987-01-08 1990-04-24 Texas Instruments Incorporated Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage
US4801555A (en) * 1987-01-14 1989-01-31 Motorola, Inc. Double-implant process for forming graded source/drain regions
US5024960A (en) * 1987-06-16 1991-06-18 Texas Instruments Incorporated Dual LDD submicron CMOS process for making low and high voltage transistors with common gate
US4818711A (en) * 1987-08-28 1989-04-04 Intel Corporation High quality oxide on an ion implanted polysilicon surface
US4890146A (en) * 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method
JP2760068B2 (ja) * 1989-07-18 1998-05-28 ソニー株式会社 Ｍｉｓ型半導体装置の製造方法
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
EP0711457A1 (en) * 1993-07-29 1996-05-15 SIEMENS COMPONENTS, Inc. A reverse field plate, junction-terminating structure
US5750414A (en) * 1993-09-29 1998-05-12 Siemens Components, Inc. Method of fabricating a semiconductor device
US5404094A (en) * 1994-03-18 1995-04-04 Holophane Lighting, Inc. Wide input power supply and method of converting therefor
KR100189964B1 (ko) 1994-05-16 1999-06-01 윤종용 고전압 트랜지스터 및 그 제조방법
TW288200B (en) * 1995-06-28 1996-10-11 Mitsubishi Electric Corp Semiconductor device and process thereof
JP3185656B2 (ja) * 1996-03-22 2001-07-11 富士電機株式会社 横型電界効果トランジスタおよびその製造方法
US5759897A (en) * 1996-09-03 1998-06-02 Advanced Micro Devices, Inc. Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5869866A (en) 1996-12-06 1999-02-09 Advanced Micro Devices, Inc. Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions
US5869879A (en) * 1996-12-06 1999-02-09 Advanced Micro Devices, Inc. CMOS integrated circuit having a sacrificial metal spacer for producing graded NMOS source/drain junctions dissimilar from PMOS source/drain junctions
US5766969A (en) * 1996-12-06 1998-06-16 Advanced Micro Devices, Inc. Multiple spacer formation/removal technique for forming a graded junction
US5793089A (en) * 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon
US5895955A (en) * 1997-01-10 1999-04-20 Advanced Micro Devices, Inc. MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch
KR100244282B1 (ko) * 1997-08-25 2000-02-01 김영환 고전압 트랜지스터의 구조 및 제조 방법
US6124610A (en) * 1998-06-26 2000-09-26 Advanced Micro Devices, Inc. Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant
US6111291A (en) * 1998-06-26 2000-08-29 Elmos Semiconductor Ag MOS transistor with high voltage sustaining capability
DE10137343C1 (de) * 2001-07-31 2002-09-12 Infineon Technologies Ag Halbleiterstruktur mit Feldplatte
DE10206739C1 (de) * 2002-02-18 2003-08-21 Infineon Technologies Ag Transistorbauelement
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
JP5391447B2 (ja) * 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
US8390039B2 (en) * 2009-11-02 2013-03-05 Analog Devices, Inc. Junction field effect transistor
US8193046B2 (en) 2009-11-02 2012-06-05 Analog Devices, Inc. Junction field effect transistor
US10002957B2 (en) * 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
KR101229392B1 (ko) * 2012-09-12 2013-02-05 주식회사 아이엠헬스케어 오믹 접합을 이용하는 ｆｅｔ 기반 바이오 센서
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用
US11497549B2 (en) 2018-05-08 2022-11-15 Boston Scientific Medical Device Limited Methods and devices for puncturing tissue

Family Cites Families (9)

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USB421061I5 (ja) * 1964-12-24
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
US3697827A (en) * 1971-02-09 1972-10-10 Unitrode Corp Structure and formation of semiconductors with transverse conductivity gradients
JPS49105490A (ja) * 1973-02-07 1974-10-05
JPS5435757B2 (ja) * 1974-02-15 1979-11-05
JPS5193878A (ja) * 1975-02-17 1976-08-17
JPS5942467B2 (ja) * 1975-11-28 1984-10-15 株式会社日立製作所 ハンドウタイソウチ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654069A (en) * 1979-10-08 1981-05-13 Hitachi Ltd High withstand voltage mos field-effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPH0216021B2 (ja) * 1980-05-30 1990-04-13 Sharp Kk
JPS59188976A (ja) * 1983-04-12 1984-10-26 Matsushita Electric Ind Co Ltd Ｍｏｓ電界効果トランジスタ
US5198964A (en) * 1990-09-27 1993-03-30 Hitachi, Ltd. Packaged semiconductor device and electronic device module including same
JPH05218070A (ja) * 1992-01-30 1993-08-27 Sanyo Electric Co Ltd Ｍｏｓ電界効果半導体装置
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
JP2013093482A (ja) * 2011-10-27 2013-05-16 Renesas Electronics Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
DE2753613B2 (de) 1980-03-06
DE2753613A1 (de) 1978-06-08
US4172260A (en) 1979-10-23
JPS5525513B2 (ja) 1980-07-07
DE2753613C3 (de) 1983-12-29
NL7713333A (nl) 1978-06-05

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