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1977-04-15 |
1978-11-09 |
Hitachi Ltd |
Insulated gate field effect type semiconductor device for large power
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1977-12-15 |
1982-03-17 |
Philips Electronic Associated |
Fieldeffect devices
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1978-05-01 |
1979-11-10 |
Handotai Kenkyu Shinkokai |
Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
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1978-05-29 |
1979-12-06 |
Fujitsu Ltd |
Semiconductor device and its manufacture
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1978-08-08 |
1980-02-14 |
Siemens Ag |
Mos-feldeffekttransistoren fuer hoehere spannungen
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1978-12-05 |
1995-11-30 |
Siemens Ag |
Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
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1978-12-22 |
1984-06-07 |
Texas Instruments Deutschland Gmbh, 8050 Freising |
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1979-03-16 |
1980-09-22 |
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High-stability ion-injected resistor
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1979-03-28 |
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1979-03-28 |
1988-04-05 |
Honeywell Inc. |
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1979-05-28 |
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Siemens Ag |
Feldeffekttransistor mit kurzer kanallaenge
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1979-06-04 |
1983-03-04 |
株式会社日立製作所 |
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1979-10-08 |
1981-05-13 |
Hitachi Ltd |
High withstand voltage mos field-effect semiconductor device
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1979-12-10 |
1986-01-16 |
Sharp K.K., Osaka |
MOS-Transistor für hohe Betriebsspannungen
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1980-02-22 |
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1980-03-22 |
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Sharp Kabushiki Kaisha |
High voltage MOS transistor
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JPS56161676A
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1980-05-16 |
1981-12-12 |
Japan Electronic Ind Dev Assoc<Jeida> |
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JPS56169369A
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1980-05-30 |
1981-12-26 |
Sharp Corp |
High withstand voltage mos field effect semiconductor device
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1980-05-30 |
1981-12-26 |
Sharp Corp |
High withstand voltage mos field effect semiconductor device
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1981-07-06 |
1983-02-01 |
Philips Nv |
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1982-05-10 |
1984-12-25 |
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1982-05-27 |
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1982-06-21 |
1986-02-18 |
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1982-06-21 |
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1982-10-06 |
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1983-04-12 |
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1986-03-31 |
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