DE102004063523B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102004063523B4
DE102004063523B4 DE102004063523A DE102004063523A DE102004063523B4 DE 102004063523 B4 DE102004063523 B4 DE 102004063523B4 DE 102004063523 A DE102004063523 A DE 102004063523A DE 102004063523 A DE102004063523 A DE 102004063523A DE 102004063523 B4 DE102004063523 B4 DE 102004063523B4
Authority
DE
Germany
Prior art keywords
impurity region
field plates
semiconductor layer
insulating film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102004063523A
Other languages
German (de)
English (en)
Other versions
DE102004063523A1 (de
Inventor
Kazuhiro Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102004063523A1 publication Critical patent/DE102004063523A1/de
Application granted granted Critical
Publication of DE102004063523B4 publication Critical patent/DE102004063523B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D17/00—Excavations; Bordering of excavations; Making embankments
    • E02D17/20—Securing of slopes or inclines
    • E02D17/205—Securing of slopes or inclines with modular blocks, e.g. pre-fabricated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2600/00—Miscellaneous
    • E02D2600/20—Miscellaneous comprising details of connection between elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • General Engineering & Computer Science (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Paleontology (AREA)
  • Civil Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE102004063523A 2004-03-03 2004-12-30 Halbleitervorrichtung Expired - Fee Related DE102004063523B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004058883A JP4667756B2 (ja) 2004-03-03 2004-03-03 半導体装置
JP2004-058883 2004-03-03

Publications (2)

Publication Number Publication Date
DE102004063523A1 DE102004063523A1 (de) 2005-09-22
DE102004063523B4 true DE102004063523B4 (de) 2008-05-29

Family

ID=34879837

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004063523A Expired - Fee Related DE102004063523B4 (de) 2004-03-03 2004-12-30 Halbleitervorrichtung

Country Status (7)

Country Link
US (1) US7327007B2 (https=)
JP (1) JP4667756B2 (https=)
KR (1) KR100710433B1 (https=)
CN (1) CN100388493C (https=)
DE (1) DE102004063523B4 (https=)
IT (1) ITTO20050127A1 (https=)
TW (2) TWI277208B (https=)

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JP4906281B2 (ja) * 2005-03-30 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4863665B2 (ja) 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
JP4914589B2 (ja) * 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
JP4973238B2 (ja) * 2007-02-28 2012-07-11 三菱電機株式会社 半導体装置
US7719076B2 (en) * 2007-08-10 2010-05-18 United Microelectronics Corp. High-voltage MOS transistor device
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5985393B2 (ja) 2009-08-04 2016-09-06 ジーエーエヌ システムズ インコーポレイテッド アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ
US9029866B2 (en) 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
JP5594515B2 (ja) * 2010-03-26 2014-09-24 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法
CN102893392B (zh) 2010-04-13 2015-08-05 Gan系统公司 采用孤岛拓扑结构的高密度氮化镓器件
JP5505499B2 (ja) * 2010-06-04 2014-05-28 富士電機株式会社 半導体装置および駆動回路
US8629513B2 (en) * 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
DE102011108651B4 (de) * 2011-07-26 2019-10-17 Austriamicrosystems Ag Hochvolttransistorbauelement und Herstellungsverfahren
US9373619B2 (en) * 2011-08-01 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with high voltage junction termination
CN102856356B (zh) * 2012-09-28 2015-09-09 中国科学院微电子研究所 用于半导体功率器件的终端
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
EP2757580A1 (en) * 2013-01-22 2014-07-23 Nxp B.V. Bipolar cmos dmos (bcd) processes
JP6228428B2 (ja) 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
JP6210913B2 (ja) * 2014-03-20 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6185440B2 (ja) * 2014-09-16 2017-08-23 株式会社東芝 半導体装置
CN105789051A (zh) * 2014-12-24 2016-07-20 北大方正集团有限公司 一种ldmos晶体管及制作方法
CN105070756B (zh) * 2015-08-18 2018-06-19 上海华虹宏力半导体制造有限公司 超高压ldmos器件结构
WO2017159640A1 (ja) * 2016-03-14 2017-09-21 富士電機株式会社 半導体装置および製造方法
JP6693805B2 (ja) * 2016-05-17 2020-05-13 ローム株式会社 半導体装置
US11063116B2 (en) 2016-09-13 2021-07-13 Mitsubishi Electric Corporation Semiconductor device
JP6996247B2 (ja) * 2017-11-17 2022-01-17 富士電機株式会社 半導体集積回路装置
JP7407590B2 (ja) 2019-12-25 2024-01-04 三菱電機株式会社 半導体装置および集積回路
JP7608226B2 (ja) * 2021-03-19 2025-01-06 株式会社東芝 半導体装置
US20230097805A1 (en) * 2021-09-24 2023-03-30 Intel Corporation Complex field-shaping by fine variation of local material density or properties
GB2639824A (en) * 2024-03-21 2025-10-08 X Fab Global Services Gmbh Improved field plate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292642A (en) * 1978-01-18 1981-09-29 U.S. Philips Corporation Semiconductor device
JPH02248078A (ja) * 1989-03-22 1990-10-03 Fuji Electric Co Ltd 高耐圧素子を含む半導体装置
JPH05190693A (ja) * 1992-01-16 1993-07-30 Mitsubishi Electric Corp 半導体装置
JPH09283716A (ja) * 1996-04-15 1997-10-31 Mitsubishi Electric Corp 半導体装置
US6194761B1 (en) * 1998-02-10 2001-02-27 Stmicroelectronics S.R.L. VDMOS transistor protected against over-voltages between source and gate

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JPS61168253A (ja) * 1985-01-19 1986-07-29 Sharp Corp 高耐圧ｍｏｓ電界効果半導体装置
JPS6364365A (ja) 1986-09-05 1988-03-22 Hitachi Ltd 半導体装置
US5153697A (en) * 1989-02-10 1992-10-06 Texas Instruments Incorporated Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
US5455436A (en) * 1994-05-19 1995-10-03 Industrial Technology Research Institute Protection circuit against electrostatic discharge using SCR structure
JP3808116B2 (ja) 1995-04-12 2006-08-09 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
JP3547884B2 (ja) * 1995-12-30 2004-07-28 三菱電機株式会社 半導体装置及びその製造方法
JP3893185B2 (ja) 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JPH104143A (ja) 1996-06-14 1998-01-06 Sanyo Electric Co Ltd 半導体集積回路
JPH1012873A (ja) * 1996-06-27 1998-01-16 Matsushita Electric Works Ltd 半導体装置
JPH10242454A (ja) * 1997-02-27 1998-09-11 Matsushita Electric Works Ltd 半導体装置
JP2000091443A (ja) * 1998-09-14 2000-03-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000294763A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体装置
JP3425131B2 (ja) * 1999-12-17 2003-07-07 松下電器産業株式会社 高耐圧半導体装置
KR100374627B1 (ko) * 2000-08-04 2003-03-04 페어차일드코리아반도체 주식회사 고내압 아이솔레이션 영역을 갖는 고전압 반도체 소자
JP4610786B2 (ja) 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP3654872B2 (ja) * 2001-06-04 2005-06-02 松下電器産業株式会社 高耐圧半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292642A (en) * 1978-01-18 1981-09-29 U.S. Philips Corporation Semiconductor device
JPH02248078A (ja) * 1989-03-22 1990-10-03 Fuji Electric Co Ltd 高耐圧素子を含む半導体装置
JPH05190693A (ja) * 1992-01-16 1993-07-30 Mitsubishi Electric Corp 半導体装置
JPH09283716A (ja) * 1996-04-15 1997-10-31 Mitsubishi Electric Corp 半導体装置
US6194761B1 (en) * 1998-02-10 2001-02-27 Stmicroelectronics S.R.L. VDMOS transistor protected against over-voltages between source and gate

Also Published As

Publication number Publication date
TW200531275A (en) 2005-09-16
DE102004063523A1 (de) 2005-09-22
TWI277208B (en) 2007-03-21
CN1665028A (zh) 2005-09-07
US7327007B2 (en) 2008-02-05
ITTO20050127A1 (it) 2005-09-04
KR100710433B1 (ko) 2007-04-24
TW200629558A (en) 2006-08-16
US20050194656A1 (en) 2005-09-08
JP2005251903A (ja) 2005-09-15
CN100388493C (zh) 2008-05-14
TWI283926B (en) 2007-07-11
KR20060043235A (ko) 2006-05-15
JP4667756B2 (ja) 2011-04-13

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee