ITTO20050127A1 - Dispositivo a semiconduzione - Google Patents

Dispositivo a semiconduzione

Info

Publication number
ITTO20050127A1
ITTO20050127A1 IT000127A ITTO20050127A ITTO20050127A1 IT TO20050127 A1 ITTO20050127 A1 IT TO20050127A1 IT 000127 A IT000127 A IT 000127A IT TO20050127 A ITTO20050127 A IT TO20050127A IT TO20050127 A1 ITTO20050127 A1 IT TO20050127A1
Authority
IT
Italy
Prior art keywords
semiconduction
semiconduction device
Prior art date
Application number
IT000127A
Other languages
English (en)
Inventor
Kazuhiro Shimizu
Original Assignee
Hsu Lily
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hsu Lily filed Critical Hsu Lily
Publication of ITTO20050127A1 publication Critical patent/ITTO20050127A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D17/00—Excavations; Bordering of excavations; Making embankments
    • E02D17/20—Securing of slopes or inclines
    • E02D17/205—Securing of slopes or inclines with modular blocks, e.g. pre-fabricated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2600/00—Miscellaneous
    • E02D2600/20—Miscellaneous comprising details of connection between elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mining & Mineral Resources (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Paleontology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT000127A 2004-03-03 2005-02-28 Dispositivo a semiconduzione ITTO20050127A1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004058883A JP4667756B2 (ja) 2004-03-03 2004-03-03 半導体装置

Publications (1)

Publication Number Publication Date
ITTO20050127A1 true ITTO20050127A1 (it) 2005-09-04

Family

ID=34879837

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000127A ITTO20050127A1 (it) 2004-03-03 2005-02-28 Dispositivo a semiconduzione

Country Status (7)

Country Link
US (1) US7327007B2 (it)
JP (1) JP4667756B2 (it)
KR (1) KR100710433B1 (it)
CN (1) CN100388493C (it)
DE (1) DE102004063523B4 (it)
IT (1) ITTO20050127A1 (it)
TW (2) TWI283926B (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4906281B2 (ja) * 2005-03-30 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4863665B2 (ja) 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
JP4914589B2 (ja) * 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
JP4973238B2 (ja) 2007-02-28 2012-07-11 三菱電機株式会社 半導体装置
US7719076B2 (en) * 2007-08-10 2010-05-18 United Microelectronics Corp. High-voltage MOS transistor device
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
WO2011014951A1 (en) * 2009-08-04 2011-02-10 John Roberts Island matrixed gallium nitride microwave and power switching transistors
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5594515B2 (ja) * 2010-03-26 2014-09-24 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法
CN102893392B (zh) 2010-04-13 2015-08-05 Gan系统公司 采用孤岛拓扑结构的高密度氮化镓器件
US8546889B2 (en) 2010-06-04 2013-10-01 Fuji Electric Co., Ltd. Semiconductor device and driving circuit
US8629513B2 (en) * 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
DE102011108651B4 (de) * 2011-07-26 2019-10-17 Austriamicrosystems Ag Hochvolttransistorbauelement und Herstellungsverfahren
US9373619B2 (en) * 2011-08-01 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with high voltage junction termination
CN102856356B (zh) * 2012-09-28 2015-09-09 中国科学院微电子研究所 用于半导体功率器件的终端
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
EP2757580A1 (en) * 2013-01-22 2014-07-23 Nxp B.V. Bipolar cmos dmos (bcd) processes
JP6228428B2 (ja) * 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
JP6210913B2 (ja) * 2014-03-20 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6185440B2 (ja) * 2014-09-16 2017-08-23 株式会社東芝 半導体装置
CN105789051A (zh) * 2014-12-24 2016-07-20 北大方正集团有限公司 一种ldmos晶体管及制作方法
CN105070756B (zh) * 2015-08-18 2018-06-19 上海华虹宏力半导体制造有限公司 超高压ldmos器件结构
JP6504313B2 (ja) * 2016-03-14 2019-04-24 富士電機株式会社 半導体装置および製造方法
JP6693805B2 (ja) * 2016-05-17 2020-05-13 ローム株式会社 半導体装置
CN109690770B (zh) 2016-09-13 2023-04-04 三菱电机株式会社 半导体装置
JP6996247B2 (ja) * 2017-11-17 2022-01-17 富士電機株式会社 半導体集積回路装置
JP7407590B2 (ja) 2019-12-25 2024-01-04 三菱電機株式会社 半導体装置および集積回路
JP2022144785A (ja) * 2021-03-19 2022-10-03 株式会社東芝 半導体装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JPS61168253A (ja) * 1985-01-19 1986-07-29 Sharp Corp 高耐圧ｍｏｓ電界効果半導体装置
JPS6364365A (ja) 1986-09-05 1988-03-22 Hitachi Ltd 半導体装置
US5153697A (en) * 1989-02-10 1992-10-06 Texas Instruments Incorporated Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
JP2605860B2 (ja) 1989-03-22 1997-04-30 富士電機株式会社 高耐圧素子を含む半導体装置
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
JP2739004B2 (ja) * 1992-01-16 1998-04-08 三菱電機株式会社 半導体装置
US5455436A (en) * 1994-05-19 1995-10-03 Industrial Technology Research Institute Protection circuit against electrostatic discharge using SCR structure
JP3808116B2 (ja) 1995-04-12 2006-08-09 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
JP3547884B2 (ja) * 1995-12-30 2004-07-28 三菱電機株式会社 半導体装置及びその製造方法
JP3917211B2 (ja) * 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3893185B2 (ja) 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JPH104143A (ja) 1996-06-14 1998-01-06 Sanyo Electric Co Ltd 半導体集積回路
JPH1012873A (ja) * 1996-06-27 1998-01-16 Matsushita Electric Works Ltd 半導体装置
JPH10242454A (ja) * 1997-02-27 1998-09-11 Matsushita Electric Works Ltd 半導体装置
DE69834315T2 (de) * 1998-02-10 2007-01-18 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist
JP2000091443A (ja) * 1998-09-14 2000-03-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000294763A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体装置
JP3425131B2 (ja) * 1999-12-17 2003-07-07 松下電器産業株式会社 高耐圧半導体装置
KR100374627B1 (ko) * 2000-08-04 2003-03-04 페어차일드코리아반도체 주식회사 고내압 아이솔레이션 영역을 갖는 고전압 반도체 소자
JP4610786B2 (ja) 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP3654872B2 (ja) * 2001-06-04 2005-06-02 松下電器産業株式会社 高耐圧半導体装置

Also Published As

Publication number Publication date
TWI277208B (en) 2007-03-21
US20050194656A1 (en) 2005-09-08
CN100388493C (zh) 2008-05-14
TW200629558A (en) 2006-08-16
TWI283926B (en) 2007-07-11
TW200531275A (en) 2005-09-16
US7327007B2 (en) 2008-02-05
DE102004063523B4 (de) 2008-05-29
JP2005251903A (ja) 2005-09-15
KR100710433B1 (ko) 2007-04-24
KR20060043235A (ko) 2006-05-15
CN1665028A (zh) 2005-09-07
DE102004063523A1 (de) 2005-09-22
JP4667756B2 (ja) 2011-04-13

Similar Documents

Publication Publication Date Title
ITTO20050127A1 (it) Dispositivo a semiconduzione
NL301229I2 (nl) Deoxycholaat
DE602005012730D1 (de) Lk-kommunikationsgerät
DE602005016187D1 (de) Staubreduzierende Einrichtung
DE602005017689D1 (de) Tragbares Gerät
DE602005002797D1 (de) Tragvorrichtung
FI20045342A0 (fi) Kameraelementtejä käsittävä laite
DE602005027038D1 (de) Steuervorrichtung
DE602005007428D1 (de) Windschutzscheibeneinrichtung
DE502005002411D1 (de) Bedienelement
DE502005001883D1 (de) Anschlussvorrichtung
DE602005024028D1 (de) Bewegungsführungsvorrichtung
DE602005002678D1 (de) Anschlussvorrichtung
DE502005001451D1 (de) Fugenabdeckprofil
DE602005020719D1 (de) Mehrfach-Funktions-Gerät
DE602005020166D1 (de) Bewegungsführungsvorrichtung
DE102005040089B8 (de) Steuervorrichtung
DE502005010339D1 (de) Schaltvorrichtung
DE602005012921D1 (de) Flachbildschirm
DE502005001060D1 (de) Drosselklappenvorrichtung
DE502005004520D1 (de) Schaltvorrichtung
DE602004027003D1 (de) Ausziehbohle
DE602005012509D1 (de) Kegelspielvorrichtung
DE502005007053D1 (de) Verbindungseinrichtung
AT500444B8 (de) Verbindungsvorrichtung