CN1725442A - 氮化钛去除方法 - Google Patents

氮化钛去除方法 Download PDF

Info

Publication number
CN1725442A
CN1725442A CNA2005100875269A CN200510087526A CN1725442A CN 1725442 A CN1725442 A CN 1725442A CN A2005100875269 A CNA2005100875269 A CN A2005100875269A CN 200510087526 A CN200510087526 A CN 200510087526A CN 1725442 A CN1725442 A CN 1725442A
Authority
CN
China
Prior art keywords
titanium nitride
process gas
enrichment
substrate
reactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2005100875269A
Other languages
English (en)
Other versions
CN100378911C (zh
Inventor
吴定军
齐宾
E·J·小卡瓦基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of CN1725442A publication Critical patent/CN1725442A/zh
Application granted granted Critical
Publication of CN100378911C publication Critical patent/CN100378911C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Cleaning In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

一种从衬底表面去除氮化钛的方法，包括：提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体，其中富集在第一个位置处进行；提供衬底温度大于50℃的衬底，其中衬底表面至少部分涂有氮化钛；和使衬底表面上的氮化钛与富集的过程气体接触以从衬底表面上挥发和去除氮化钛，其中接触在不同于第一个位置的第二个位置处发生。

Description

氮化钛去除方法
发明背景
氮化钛常用作集成电路中的扩散屏障，用于阻止导电材料扩散或迁移到绝缘材料和晶体管作用区内。它还用作消除导电材料和绝缘介电材料周围区域之间的分层和空隙的粘合促进剂。在TiN沉积过程中，包含最终材料以及反应物的残余物沿内壁沉积到反应器内部件的表面上。为了减少由于这些残余物堆积引起的粒子形成，反应器内的室和部件必须定期清洁。因此，需要这种去除氮化钛的有效方法。
除了在半导体制造中有用外，氮化钛还经常用作航空航天和汽车应用中的涂层。必须按时清洁用于沉积氮化钛薄膜的反应器，以确保处理均匀性。因此，需要快捷和经济的方法清洁这些反应器。
氮化钛还用于涂镀各种机器零件。有时，在涂镀过程中或涂镀过程后，涂层剥落或缺少零件要求的所需均匀性。这种“不合格”零件时常必须被遗弃或作为有缺陷零件低价出售。如果能从零件上去除涂层而不破坏下面的零件表面或形貌，则零件然后可被重新涂镀并用作“原始”部件。
目前，机械方法如擦洗或喷砂(blasting)、或湿化学溶液经常用于清洁氮化钛处理室和从室中取出的任何零件。
与湿法或机械清洁相比，活性气体清洁保持反应器为真空，并因此能极大地最小化室停工时间和提高晶片产量。尽管活性气体清洁方法在其它方面被认为是有用的，但这种方法对从表面上去除氮化钛还不能令人完全满意。例如，美国专利5948702教导了从W/TiN栅极结构去除氮化钛薄膜的干法蚀刻方法，使用远程等离子体激发包含氧气和氟如C2F6和O2的源气体混合物，并公开了氮化钛蚀刻速度不高于约110nm/min。
已建议利用高衬底温度提高对氮化钛而非其它材料的蚀刻选择性或提高氮化钛蚀刻速度。参见例如美国专利5419805，其公开了相对于难熔金属硅化物的底层来选择性蚀刻难熔金属氮化物层的方法，其中衬底首先被加热到50-200℃，然后暴露于卤化碳原料气如CF4、C2F6和CHF3产生的等离子体中；和美国专利6177355B1，其教导了去除集成电路中导体上抗反射涂层的填充(pad)蚀刻方法，其中通过例如关掉RF驱动电极的后部氦冷却产生高温蚀刻。尽管使用了高温，但用这些方法获得的蚀刻速度还有提高的空间。
日本专利2833684B2中讨论了从处理室清洁薄膜的方法。该专利公开了清洁在薄膜处理设备中出现的化学物质沉积物包括氮化钛的方法。具体地说，该专利教导了在150-600℃的温度下向三氟化氮中加入氟的方法。该专利没有教导等离子体的使用，而只是使用热能加热。
教导使用原位等离子体的氮化钛等离子体蚀刻的文献包括WO98/42020A1、WO00/19491和WO02/013241A2。过程气体可为含Cl或含F物质，如Cl2、HCl、BCl3、CF4、SF6、CHF3或NF3。
WO00/19491教导了在清洁氮化钛沉积室时使用高温。该申请集中在处理室的原位清洁上，在高温下引入氯气到室内，使用或不使用原位等离子体激活。该申请中教导的温度高至500-700℃，大大增加了热预算，并提高了处理室所有者的成本。
因此，希望提供一种以高蚀刻速度从表面如处理室或零件表面去除氮化钛的方法。另外，希望提供一种能完成这种去除而不破坏室或零件表面的方法。还希望提供一种高效和有效地从表面去除氮化钛的活性气体方法。
本文全文引入本文引用的全部文献作为参考。
发明概述
在本发明的一个方面，提供一种从衬底表面去除氮化钛的方法，包括：提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体，其中富集在第一个位置处进行；提供衬底温度大于50℃的衬底，其中衬底表面至少部分涂有氮化钛；和使衬底表面上的氮化钛与富集的过程气体接触以从衬底表面上挥发和去除氮化钛，其中接触在不同于第一个位置的第二个位置处发生。
还提供从衬底表面去除氮化钛的方法，包括：提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体；提供衬底温度为50℃-900℃的衬底，其中衬底表面至少部分涂有氮化钛；和使衬底表面上的氮化钛与富集的过程气体接触以大于180nm/min的蚀刻速度从衬底表面上挥发和去除氮化钛，其中接触氮化钛的富集过程气体基本上没有离子。
还提供从衬底表面去除涂层的方法，包括：提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体，其中富集在第一个位置处进行；提供衬底温度为50℃-900℃的衬底；和使衬底表面上的涂层与富集的过程气体接触以大于180nm/min的蚀刻速度从衬底表面上挥发和去除涂层，其中接触在不同于第一个位置的第二个位置处发生，并且衬底表面上的涂层包含钛和氮的二元化合物。
还提供实现本发明方法的装置，所述装置包括：与处理反应器分开的清洁处理反应器；远程等离子体产生器；适于提供遍布清洁处理反应器的气流的气体分布器；加热装置；和适于从清洁处理反应器除去活性气体和挥发产物的泵抽系统。
附图简述
将结合下面的图描述本发明的某些方面，其中相同的参考数字代表相同的元件，其中：
图1为实施例中所用试验系统的示意图。
图2为实施例1蚀刻速度和衬底温度的关系图。
图3为实施例4蚀刻速度和衬底温度的关系图。
发明详述
本文描述利用活性气体清洁从衬底表面去除氮化钛的方法。活性气体清洁的要求是将固体非挥发性材料转化成可被除去(例如通过真空泵)的挥发性物质。除了在热力学上有利外，转化所需的化学反应还应在动力学上可行。由于氮化钛的化学惰性，需要克服激活能势垒的外部能量源以便反应可进行。外部能量源优选以热激活的形式提供。热激活中涉及的相对高温可加速化学反应，并使反应副产物更有挥发性。但是，对产物室中的温度可能有实际限制。
发明人发现，当过程气体被处理以包含增加浓度的活性物质时，热激活的温度不需要太高。热激活和过程气体富集活性物质的结合提供了比单独热激活更有效和高效地从衬底表面去除氮化钛的方法。
因此，使热激活的衬底与过程气体接触以挥发沉积在衬底表面上的氮化钛。过程气体被处理以便在其中提供(或增加存在)活性物质。本文使用的“活性物质”代表能与氮化钛反应形成挥发性产物的基团。氟和氯基团为活性物质尤其优选的例子。
远程等离子体产生器为使过程气体富集活性物质的最优选方法。但是，本发明不限于此。提高过程气体中活性基团浓度的其它方法也在本发明的范围内，如在远程炉中加热过程气体，和通过UV辐射离解过程气体等。
尽管原位等离子体产生器以及远程等离子体产生器可提供活性物质，但原位等离子体激活还可导致不需要的副作用。使用原位等离子体可由于离子轰击而导致对衬底的损害。与原位等离子体不同，远程等离子体可产生有利于氮化钛去除的活性物质而不会由于离子轰击而对衬底有损害。未受损害的衬底证明，远程等离子体产生器中存在的离子在从远程等离子体产生器到包含要被清洁的衬底表面的反应器的运送中被中和。因此，过程气体基本上不含离子，此时从衬底去除氮化钛时不会损害衬底。当离子浓度小于106cm-3时，过程气体基本上不含离子。
另外，远程等离子体单元可更容易地被改型到已有的系统内。因此，当使用活性气体清洁沉积室时，优选使用远程等离子体产生器。这种实施方案能从衬底去除部分或全部氮化钛而不会因离子轰击而损害衬底。
合适的等离子体产生器的例子包括但不限于微波等离子体产生器和RF等离子体产生器。
过程气体包含至少一种活性气体，和任选的至少一种载运气体。活性气体包含至少一种能与氮化钛反应(或能形成与氮化钛反应的物质)形成挥发性产物的反应物。含氟和/或含氯物质是优选的反应物，更优选含氟物质。
含氟活性气体的非限制性例子包括：NF3(三氟化氮)，NClxF3-x，x＝1-2，F2(元素氟)，ClF3(三氟化氯)、ClF(一氟化氯)、SF6(六氟化硫)、BrF3(三氟化溴)、BF3(三氟化硼)、全氟化碳如CF4和C2F6等，氢氟化碳如CHF3和C3F7H等，氧氟化碳如C4F8O(全氟四氢呋喃)、CF3OF(氟氧三氟甲烷)、CF3OOCF3(过氧双三氟甲烷)和COF2等。含氟活性气体可通过各种方法输送，如常规的气瓶、安全输送系统、真空输送系统，和能在使用时形成活性气体的固体或液体基产生器。
含氯活性气体的非限制性例子包括：BCl3(三氯化硼)，Cl2(氯)、COCl2(光气)、HCl(氯化氢)和反-二氯乙烯(C2H2Cl2)(例如可从Air Products and Chemicals，Inc.，Allentown，PA得到的TRANS-LC)。
优选以10-10000sccm的流速将过程气体供应到等离子体反应器中。
过程气体可任选地包含至少一种载运气体。合适的载运气体包括但不限于N2、He、Ne、Kr、Xe和/或Ar。载运气体可占过程气体的0-至少99.9％，更优选过程气体的1-99.9％。
过程气体可任选地包含另外的添加剂，只要它们不会不适当地妨碍处理的效力即可。例如，在某些实施方案中，氧气可用于帮助离解活性气体形成活性物质，但在其它实施方案中可能无用。
如上所述，使过程气体富集活性物质的优选方法是在远程等离子体产生器中由过程气体产生等离子体。本文使用的术语“等离子体”代表包含离子和电子的气体。在远程等离子体产生器中由过程气体产生等离子体以提供富集的过程气体，富集的过程气体被输送到反应器，其中过程气体中的活性物质与反应器中的氮化钛反应。反应产物是挥发性的，并由通过反应器的气流从衬底带走。
对适合于由过程气体产生等离子体的条件没有特殊限制。优选的等离子体产生参数如下：等离子体压力为0.5-50Torr，等离子体功率为100-10000瓦。更优选的等离子体产生参数如下：等离子体压力为1-10Torr，等离子体功率为500-5000瓦。
在优选的实施方案中，富集的过程气体被从远程等离子体产生器(“第一位置”)输送到包含衬底的反应器(“第二位置”)，从该衬底上去除氮化钛。富集的过程气体可在任选的载运气体和/或第一和第二位置间压差的帮助下输送。选择反应器中的条件以有助于等离子体活性气体和衬底上氮化钛之间的反应。反应器压力优选为0.5-50Torr，更优选1-10Torr。反应器压力可与等离子体压力相同或不同。对反应器温度没有特殊限制。
衬底包含在反应器内，在有些实施方案中，可为反应器自身的表面。在其它实施方案中，衬底为反应器内与反应器不同的物体。因此，表面可被去除氮化钛的合适衬底包括但不限于处理室、工具零件、机器零件、工件等。
将衬底加热至能与富集的过程气体中活性物质结合有助于从衬底表面去除氮化钛的衬底温度。合适的衬底温度范围取决于活性气体的热分解温度、克服反应激活能势垒需要的能量和设备硬件能力。当与活性物质富集结合使用时，适于热激活的衬底温度优选为50℃或更高，优选50-900℃，更优选50-500℃，甚至更优选100-350℃。
对加热衬底的方法没有特殊限制。在某些实施方案中，衬底与加热装置热接触。优选地，衬底被安装在座架式加热器可接近富集过程气体的位置处。在其它实施方案中，通过使用外部加热元件如灯或电阻加热器升高反应器温度来加热衬底。例如，当衬底为反应器自身的表面时，升高反应器的温度(衬底温度与反应器温度相同)。
本文描述的方法能以高速度从衬底表面蚀刻氮化钛而不会损害衬底。本文中按照其常规含义使用表达“氮化钛”，代表宽范围化学计量比的钛和氮的二元化合物。
本发明的某些实施方案比其它一些提供更快的蚀刻速度。例如，使用远程NF3等离子体和100℃的热能加热获得超过240nm/min的蚀刻速度，而使用远程Cl2等离子体和350℃的热能加热获得约6nm/min的蚀刻速度。本文描述的方法可以以至少约6nm/min的速度蚀刻氮化钛，优选至少约40nm/min，更优选大于180nm/min，还更优选大于240nm/min。
在本发明的一些实施方案中，在与处理反应器分开的反应器中清洁零件，其中零件涂有氮化钛。适于这种分开清洁处理的优选装置包括装备有远程等离子体产生系统的清洁处理反应器，确保整个清洁处理反应器内气流均匀的气体分布器，加热反应器的装置，和用于从清洁处理反应器中除去活性气体和挥发性产物的泵抽系统。将涂有TiN的部件如反应器零件和刀具装到反应器内。当达到所需的处理温度时，启动活性气体流通过远程等离子体单元。等离子体产生的氟和/或氯基团然后流过分布器板并进入处理室。TiN被从放在反应器中的零件上去除，留下没有沉积物的衬底。
实施例
将结合下面的实施例更详细地说明本发明，但应理解本发明不应认为限制于此。
下面是利用活性气体清洁的氮化钛去除的试验实施例。试验系统既具有远程等离子体，又具有热能加热能力。在所有试验中，用涂有约120nm氮化钛的Si晶片制备样品。利用定时暴露于处理条件前和后氮化钛薄膜厚度变化计算氮化钛去除速度。使用四点导电探针测定氮化钛薄膜厚度。为校验电四点探针测量的精度，在蚀刻/清洁处理后将部分试样块切成横截面。然后用扫描电镜(SEM)检查试样块横截面，以精确确定处理后氮化钛薄膜厚度。SEM结果与四点探针测量结果一致。
实施例1：使用远程NF3等离子体和热能加热结合去除氮化钛
这个实施例说明使用远程等离子体和热能加热的结合清洁处理室和零件的方法，NF3作为过程气体。
图1显示了试验系统的示意工艺图。将远程等离子体产生器10(MKS ASTRON，可从MKS Instruments of Wilmington，MA得到)安装在反应器12的顶部。等离子体产生器10的出口14和试样块16之间的距离为大约6英寸(15.25cm)。试样块16放在座架式加热器18的表面上。使用加热器获得不同的衬底温度。在所有运行中，远程等离子体产生器运转时用200sccm NF3和200sccm Ar的混合物作为过程气体(通过管20供给到等离子体产生器10)，并借助泵口22使室压力保持在4torr。
对每次试验设计(DOE)运行执行下面的试验顺序：
1.排空室；
2.装载试样块并关闭前门；
3.对室抽真空以达到基线真空压力；
4.加热试样块到预定温度；
5.在达到预定温度后，引入氩气并使压力稳定；
6.打开远程等离子体电源；
7.引入过程气体；
8.在预定时间后关闭远程等离子体电源；
9.停止处理流并对室抽真空；和
10.排空室并取回试样块进行分析。
图2显示了不同衬底温度下的氮化钛蚀刻速度。在40℃时，薄膜厚度增加，因此，在这种温度条件下，在图2上显示负蚀刻速度。在这样低的温度下，将氟原子引入到样品表面上的氮化钛晶格结构中会导致薄膜厚度增加。
在高于40℃的温度下观察到氮化钛的蚀刻。氮化钛蚀刻速度随着衬底温度的升高而增加。令人惊奇地是，在90℃-100℃，蚀刻速度突然以大于10的倍数猛增。实施例3表明，当只使用热能加热时，蚀刻速度在450℃时只有约20nm/min。结果表明，在远程等离子体和热能加热之间有协同相互作用。
试验数据还表明，加入O2到过程气体中没有改善清洁处理。
实施例2：使用远程Cl2等离子体和热能加热结合去除氮化钛
这个实施例说明使用远程等离子体和热能加热的结合清洁处理室和零件的方法，其中Cl2作为过程气体。
试验设置与实施例1相同。
过程气体这里为200sccm Cl2和200sccm Ar的混合物。在远程Cl2等离子体下，在100℃时没有观察到蚀刻，而在350℃下得到约6nm/min的蚀刻速度。Cl2气体的蚀刻速度比NF3气体的蚀刻速度慢得多。根据CRC Handbook，在Ti(IV)卤化物中间，TiCl4是最有挥发性的(熔点25℃，沸点136℃)。TiF4具有284℃的熔点，并在更高的温度下只是升华。根据这种信息，氯基试剂应比氟基试剂能使氮化钛挥发更容易。在结合等离子体和热激活的处理中，氟试剂如NF3去除氮化钛比氯试剂如Cl2快的发现是未预料到的。
实施例3；使用NF3的热能加热去除氮化钛
这个对比实施例说明使用热能加热清洁处理室和零件的方法，其中NF3作为过程气体。
试验设置与实施例1和2相同，除了关闭远程等离子体和使用较高的室压力8torr。
使用500sccm的NF3流作为过程气体。氮化钛在350℃和450℃的蚀刻速度分别为约0.6nm/min和约20nm/min。没有远程等离子体时，对于相同的过程气体，需要高得多的温度去除氮化钛。
实施例4：使用F2的热能加热去除氮化钛
这个对比实施例说明使用热能加热清洁处理室和零件的方法，其中F2作为过程气体。
除了NF3，还试验了N2中含5.1％的F2用于氮化钛去除。250sccm的平稳流通过反应器室，使室保持在8torr的压力下。图3显示了氮化钛蚀刻速度随衬底温度的变化。较高的衬底温度产生较高的氮化钛蚀刻速度。与NF3相比，对于5.1％的F2，需要较低的衬底温度启动与氮化钛的清洁反应。
实施例5：使用Cl2的热能加热去除氮化钛
这个对比实施例说明使用热能加热清洁处理室和零件的方法，其中Cl2作为过程气体。
当试验条件为200sccm Cl2流量、8torr室压力和350℃衬底温度时，没有观察到蚀刻。当温度提高到450℃时，在10分钟清洁后仍有留下的氮化钛残余物薄层。这表明，450℃时的蚀刻速度小于12nm/min，这远远小于相同操作条件下NF3的蚀刻速度。含F化合物在氮化钛去除上比含Cl化合物更有活性。
实施例6：从座架式加热器的表面上去除氮化钛
使用与实施例1相同的工艺测试表面涂有氮化钛的座架式加热器。从氮化钛处理室中取出铝制的加热器。加热器表面上的氮化钛层为约20μm。在这个试验中，使用400sccm NF3、400sccm Ar和4torr室压力作为远程等离子体条件，使用150℃作为衬底温度。在45分钟内，氮化钛层被完全去除。在加热器表面上没有观察到损害。
尽管已详细描述了本发明，并参考了其具体的实施例，但只要不脱离其精神和范围，在其中进行各种改变和变化对本领域的技术人员来说都是显而易见的。

Claims (19)

1.一种从衬底表面去除氮化钛的方法，所述方法包括：
提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；
使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体，其中富集在第一个位置处进行；
提供衬底温度大于50℃的衬底，其中衬底表面至少部分涂有氮化钛；和
使衬底表面上的氮化钛与富集的过程气体接触以从衬底表面上挥发和去除氮化钛，其中接触在不同于第一个位置的第二个位置处发生。
2.如权利要求1的方法，其中衬底为处理室、工具零件、机器零件或工件。
3.如权利要求1的方法，其中衬底基本不会因氮化钛去除而受损害。
4.如权利要求1的方法，其中第一位置为等离子体产生器，富集包括由过程气体产生等离子体，以及第二位置为与等离子体产生器流体相通的反应器。
5.如权利要求4的方法，其中在0.5-50Torr的等离子体压力下产生等离子体。
6.如权利要求4的方法，其中等离子体产生器具有100-10000瓦的等离子体功率。
7.如权利要求1的方法，其中衬底温度大于90℃。
8.如权利要求1的方法，其中至少一种反应物为选自NF3、NClF2、NCl2F、F2、ClF3、ClF、SF6、BrF3、BF3、全氟化碳、氢氟化碳和氧氟化碳中的至少一种。
9.如权利要求8的方法，其中过程气体还包括选自N2、He、Ne、Kr、Xe和Ar的载运气体。
10.如权利要求9的方法，其中过程气体包含0.1-100％的至少一种反应物和99.9-0％的载运气体。
11.如权利要求1的方法，其中以大于180nm/min的蚀刻速度从表面去除氮化钛。
12.如权利要求1的方法，其中以大于240nm/min的蚀刻速度从表面去除氮化钛。
13.如权利要求1的方法，其中不用离子轰击衬底就从表面上去除部分或全部氮化钛。
14.如权利要求1的方法，其中至少一种反应物包括NF3气体。
15.如权利要求1的方法，其中至少一种活性物质包括氟基团。
16.一种从衬底表面去除氮化钛的方法，所述方法包括：
提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；
使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体；
提供衬底温度为50℃-900℃的衬底，其中衬底表面至少部分涂有氮化钛；和
使衬底表面上的氮化钛与富集的过程气体接触以大于180nm/min的蚀刻速度从衬底表面上挥发和去除氮化钛，其中接触氮化钛的富集过程气体基本上不含离子。
17.如权利要求16的方法，其中富集包括由过程气体产生等离子体，并且接触氮化钛的富集过程气体不是等离子体。
18.一种从衬底表面去除涂层的方法，所述方法包括：
提供包括至少一种反应物的过程气体，反应物选自含氟物质和含氯物质；
使过程气体富集至少一种反应物的至少一种活性物质以形成富集的过程气体，其中富集在第一个位置处进行；
提供衬底温度为50℃-900℃的衬底；和
使衬底表面上的涂层与富集的过程气体接触以大于180nm/min的蚀刻速度从衬底表面上挥发和去除涂层，其中接触在不同于第一个位置的第二个位置处发生，并且衬底表面上的涂层包含钛和氮的二元化合物。
19.一种实现权利要求1方法的装置，所述装置包括：
与处理反应器分开的清洁处理反应器；
远程等离子体产生器；
适于在整个清洁处理反应器内提供气流的气体分布器；
加热装置；和
适于从清洁处理反应器除去活性气体和挥发产物的泵抽系统。
CNB2005100875269A 2004-07-22 2005-07-22 氮化钛去除方法 Expired - Fee Related CN100378911C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/896588 2004-07-22
US10/896,588 US20060016783A1 (en) 2004-07-22 2004-07-22 Process for titanium nitride removal

Publications (2)

Publication Number Publication Date
CN1725442A true CN1725442A (zh) 2006-01-25
CN100378911C CN100378911C (zh) 2008-04-02

Family

ID=35501561

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100875269A Expired - Fee Related CN100378911C (zh) 2004-07-22 2005-07-22 氮化钛去除方法

Country Status (6)

Country Link
US (1) US20060016783A1 (zh)
EP (1) EP1619268A3 (zh)
JP (2) JP2006035213A (zh)
KR (2) KR20060053879A (zh)
CN (1) CN100378911C (zh)
TW (1) TW200605226A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103781942A (zh) * 2011-08-31 2014-05-07 通用电气公司 局部清洁方法及设备
CN104508803A (zh) * 2012-08-27 2015-04-08 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
TWI498173B (zh) * 2009-11-17 2015-09-01 Jusung Eng Co Ltd 處理室之清潔方法
CN112458435A (zh) * 2020-11-23 2021-03-09 北京北方华创微电子装备有限公司 原子层沉积设备及清洗方法
CN113728126A (zh) * 2019-05-15 2021-11-30 昭和电工株式会社 金属除去方法、干蚀刻方法和半导体元件的制造方法

Families Citing this family (453)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719801B1 (ko) * 2005-09-05 2007-05-18 주식회사 아이피에스 반도체 장비의 내식성 강화방법
KR100794661B1 (ko) * 2006-08-18 2008-01-14 삼성전자주식회사 기판 처리 장치 및 그 장치의 세정 방법
JP4927517B2 (ja) * 2006-12-19 2012-05-09 エア・ウォーター株式会社 硬質皮膜コーティングされた工具の再生方法および硬質皮膜コーティングされた金型の再生方法
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20110162674A1 (en) * 2009-10-26 2011-07-07 Applied Materials, Inc. In-situ process chamber clean to remove titanium nitride etch by-products
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP2012174922A (ja) * 2011-02-22 2012-09-10 Central Glass Co Ltd クリーニングガス及びそれを用いたリモートプラズマクリーニング方法
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9111877B2 (en) * 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) * 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9142393B2 (en) * 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) * 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9405089B2 (en) * 2014-05-22 2016-08-02 Texas Instruments Incorporated High-temperature isotropic plasma etching process to prevent electrical shorts
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US20180033643A1 (en) * 2015-02-25 2018-02-01 Applied Materials, Inc. Methods and apparatus for using alkyl amines for the selective removal of metal nitride
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
JP6817752B2 (ja) 2016-09-09 2021-01-20 株式会社日立ハイテク エッチング方法およびエッチング装置
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
TW202344708A (zh) 2018-05-08 2023-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
CN113196454A (zh) * 2018-12-21 2021-07-30 昭和电工株式会社 利用卤素氟化物的蚀刻方法、半导体的制造方法
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
WO2023287572A1 (en) * 2021-07-12 2023-01-19 Applied Materials, Inc. Selective removal of transition metal nitride materials
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4877482A (en) * 1989-03-23 1989-10-31 Motorola Inc. Nitride removal method
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US5419805A (en) * 1992-03-18 1995-05-30 Northern Telecom Limited Selective etching of refractory metal nitrides
JP2833684B2 (ja) * 1993-09-29 1998-12-09 セントラル硝子株式会社 薄膜形成装置のクリーニング方法
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US6015761A (en) * 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US5948702A (en) * 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US6841203B2 (en) * 1997-12-24 2005-01-11 Tokyo Electron Limited Method of forming titanium film by CVD
JP2000124189A (ja) * 1998-10-21 2000-04-28 Speedfam-Ipec Co Ltd 局所エッチング装置及び局所エッチング方法
US6177355B1 (en) * 1999-08-31 2001-01-23 Advanced Micro Devices, Inc. Pad etch process capable of thick titanium nitride arc removal
US6383945B1 (en) * 1999-10-29 2002-05-07 Advanced Micro Devices, Inc. High selectivity pad etch for thick topside stacks
AU2002303842A1 (en) * 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
JP4121269B2 (ja) * 2001-11-27 2008-07-23 日本エー・エス・エム株式会社 セルフクリーニングを実行するプラズマｃｖｄ装置及び方法
US6627529B2 (en) * 2002-02-07 2003-09-30 Micron Technology, Inc. Capacitance reduction by tunnel formation for use with semiconductor device
KR100478498B1 (ko) * 2003-01-30 2005-03-28 동부아남반도체 주식회사 반도체 소자의 금속 배선 형성 방법
KR101127294B1 (ko) * 2003-02-14 2012-03-30 어플라이드 머티어리얼스, 인코포레이티드 수소-함유 라디칼을 이용한 자연 산화물 세정
US6953724B2 (en) * 2003-09-25 2005-10-11 International Business Machines Corporation Self-limited metal recess for deep trench metal fill

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI498173B (zh) * 2009-11-17 2015-09-01 Jusung Eng Co Ltd 處理室之清潔方法
CN103781942A (zh) * 2011-08-31 2014-05-07 通用电气公司 局部清洁方法及设备
CN103781942B (zh) * 2011-08-31 2015-11-25 通用电气公司 局部清洁方法及设备
US9205509B2 (en) 2011-08-31 2015-12-08 General Electric Company Localized cleaning process and apparatus therefor
CN104508803A (zh) * 2012-08-27 2015-04-08 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
CN104508803B (zh) * 2012-08-27 2016-12-07 东京毅力科创株式会社 等离子体处理方法
CN113728126A (zh) * 2019-05-15 2021-11-30 昭和电工株式会社 金属除去方法、干蚀刻方法和半导体元件的制造方法
CN112458435A (zh) * 2020-11-23 2021-03-09 北京北方华创微电子装备有限公司 原子层沉积设备及清洗方法

Also Published As

Publication number Publication date
JP2006035213A (ja) 2006-02-09
KR20060053879A (ko) 2006-05-22
TW200605226A (en) 2006-02-01
JP2009050854A (ja) 2009-03-12
KR20080058314A (ko) 2008-06-25
CN100378911C (zh) 2008-04-02
EP1619268A2 (en) 2006-01-25
EP1619268A3 (en) 2006-06-14
US20060016783A1 (en) 2006-01-26

Similar Documents

Publication Publication Date Title
CN1725442A (zh) 氮化钛去除方法
TWI674617B (zh) 用於在電漿清潔製程之後執行電漿處理製程的方法
CN1225008C (zh) 半导体器件制造方法和半导体器件制造装置
CN1883037A (zh) 等离子体处理方法以及等离子体处理装置
JPH09186143A (ja) プラズマチャンバ表面から副生成物をクリーニングするための方法及び装置
CN1795058A (zh) 反应腔构件的清洗
WO2001004936A1 (en) Method of cleaning a semiconductor device processing chamber after a copper etch process
KR20130066636A (ko) 실리콘 막들에 대한 선택적인 식각
JP2005317963A (ja) 電子付着を用いて基材から物質を除去する方法
CN1119385C (zh) 去除沉积物的气体和使用该气体的去除方法
CN1644251A (zh) 清洁反应室的方法
CN101030531A (zh) 用于控制衬底腐蚀的方法
US6290779B1 (en) Systems and methods for dry cleaning process chambers
KR100786609B1 (ko) 기구 부품의 반응성 기체 청소 방법 및 공정
CN1770390A (zh) 使用电子附着从衬底除去物质的方法
KR102459129B1 (ko) 기판 처리 방법 및 플라즈마 처리 장치
CN1574203A (zh) 从一基底移除残余物的方法
KR20210064066A (ko) 기판 처리 방법 및 플라즈마 처리 장치
CN1523656A (zh) 半导体装置的制造方法
CN113481487A (zh) 一种太阳能电池片及其背面pecvd法和应用
CN103545163A (zh) 具有氟残留或氯残留的半导体结构的处理方法
KR20220150845A (ko) 기판 처리 방법 및 플라즈마 처리 장치
CN1967786A (zh) 等离子体蚀刻方法
CN1379439A (zh) 等离子体处理
CN1519889A (zh) 半导体装置的制造设备的清洁方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080402

Termination date: 20100722