JP2006035213A - 窒化チタンの除去方法 - Google Patents
窒化チタンの除去方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Abstract
【解決手段】 (a)フッ素含有物質及び塩素含有物質からなる群より選ばれる少なくとも一種の反応体を含む処理ガスを供給すること、(b)当該処理ガスを、少なくとも一種の反応体からなる少なくとも一種の反応性化学種で富化して富化された処理ガスを生成させ、この富化を第一の場所で行うこと、(c)基体表面の少なくとも一部が窒化チタンで被覆されている基体を、50℃を超える基体温度で供給すること、そして(d)当該基体表面の窒化チタンを、富化された処理ガスと接触させて基体表面から窒化チタンを揮発、除去し、この接触を第一の場所とは異なる第二の場所で行うこと、を含む基体表面から窒化チタンを除去する方法。
【選択図】 図1
Description
この実施例では、処理ガスとしてSF3を使用した、離れた位置にあるプラズマと熱的加熱の組合せを用いることによる処理チェンバー及び部品の洗浄法について示す。
1.チェンバーの開口、
2.試験クーポンの装填及び前ドアの閉鎖、
3.基準真空圧に到達させるためのチェンバーの排気、
4.温度設定のための試験クーポンの加熱、
5.設定温度に達した後のアルゴンの導入と圧力の安定化、
6.離れた位置にあるプラズマ出力の供給開始、
7.処理ガスの導入、
8.設定時間後の離れた位置にあるプラズマ出力の供給停止、
9.処理流の停止とチェンバーの排気、及び
10.チェンバーの開放と分析のための試験クーポンの回収。
この実施例では、処理ガスとしてCl2を使用した、離れた位置にあるプラズマと熱的加熱の組合せを用いることによる処理チェンバー及び部品の洗浄法について示す。
この比較例では、処理ガスとしてSF3を使用した、熱的加熱を用いることによる処理チェンバー及び部品の洗浄法について示す。
この比較例では、処理ガスとしてF2を使用した、熱的加熱を用いることによる処理チェンバー及び部品の洗浄法を示す。
この比較例では、処理ガスとしてCl2を使用した、熱的加熱を用いることによる処理チェンバー及び部品の洗浄法を示す。
窒化チタンの被覆表面をもつ基台加熱器について、実施例1におけるそれと同じ方法を用いて試験した。アルミニウム製の加熱器を、窒化チタンの処理チェンバーから取り外した。当該加熱器表面の窒化チタン層は、約20μmであった。この実験では、離れた位置にあるプラズマ条件として、400sccmのNF3、400sccmのAr、及び4トールのチェンバー圧を用い、そして基体温度としては150℃を用いた。45分以内に、窒化チタン層は、完全に除去された。何らの損傷も、当該加熱器表面には観察されなかった。
12 反応器
14 プラズマ発生器の出口
16 試料クーポン
18 基台加熱器
20 パイプ
22 ポンプ出口
Claims (9)
- 以下の工程:
(a)フッ素含有物質及び塩素含有物質からなる群より選ばれる少なくとも一種の反応体を含む処理ガスを供給すること、
(b)当該処理ガスを、少なくとも一種の反応体からなる少なくとも一種の反応性化学種で富化して富化された処理ガスを生成させ、この富化を第一の場所で行うこと、
(c)基体表面の少なくとも一部が窒化チタンで被覆されている基体を、50℃を超える基体温度で供給すること、そして
(d)当該基体表面の窒化チタンを、富化された処理ガスと接触させて基体表面から窒化チタンを揮発、除去し、この接触を第一の場所とは異なる第二の場所で行うこと、
を含む基体表面から窒化チタンを除去する方法。 - 前記第一の場所がプラズマ発生器であり、前記富化が処理ガスからプラズマを発生させることを含み、そして前記第二の場所がプラズマ発生器と流体通路で結ばれた反応器である、請求項1に記載の方法。
- 前記少なくとも一種の反応体がNF3、NClF2、NCl2F、F2、ClF3、ClF、SF6、BrF3、BF3、ペルフルオロカーボン、ヒドロフルオロカーボン、及びオキシフルオロカーボンからなる群より選ばれる少なくとも一種である、請求項1に記載の方法。
- 前記処理ガスがN2、He、Ne、Kr、Xe及びArからなる群より選ばれるキャリアガスを更に含む、請求項1に記載の方法。
- 前記少なくとも一種の反応性化学種がフッ素ラジカルを含む、請求項1に記載の方法。
- 以下の工程:
(a)フッ素含有物質及び塩素含有物質からなる群より選ばれる少なくとも一種の反応体を含む処理ガスを供給すること、
(b)当該処理ガスを、少なくとも一種の反応体からなる少なくとも一種の反応性化学種で富化して、富化された処理ガスを生成させること、
(c)基体表面の少なくとも一部が窒化チタンで被覆されている基体を、50℃〜900℃の基体温度で供給すること、そして
(d)当該基体表面の窒化チタンを、実質的にイオンを含まない富化された処理ガスと接触させて、180nm/分を超えるエッチング速度で基体表面から窒化チタンを揮発、除去すること、
を含む基体表面から窒化チタンを除去する方法。 - 前記富化が処理ガスからプラズマを発生させることを含み、そして窒化チタンと接触させる前記富化された処理ガスがプラズマでない、請求項6に記載の方法。
- 以下の工程:
(a)フッ素含有物質及び塩素含有物質からなる群より選ばれる少なくとも一種の反応体を含む処理ガスを供給すること、
(b)当該処理ガスを、少なくとも一種の反応体からなる少なくとも一種の反応性化学種で富化して、富化された処理ガスを生成させ、この富化を第一の場所で行うこと、
(c)基体を、50℃〜900℃の基体温度で供給すること、そして
(d)当該基体表面上のチタンと窒素との二成分系化合物を含む塗膜を、富化された処理ガスと接触させて、180nm/分を超えるエッチング速度で基体表面から塗膜を揮発、除去し、この接触を第一の場所とは異なる第二の場所で行うこと、
を含む基体表面から窒化チタンを除去する方法。 - 以下の機器:
処理反応器とは別個の洗浄処理反応器、
離れた位置にあるプラズマ発生器、
洗浄処理反応器全体にわたってガス流を供給するために用いられるガスディストリビュータ、
加熱装置、及び
洗浄処理反応器から反応性ガスを除去し、生成物を揮発させるために用いられるポンプ設備
を含んでなる、請求項1の方法を行う装置。
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US10/896,588 US20060016783A1 (en) | 2004-07-22 | 2004-07-22 | Process for titanium nitride removal |
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JP2008315724A Division JP2009050854A (ja) | 2004-07-22 | 2008-12-11 | 窒化チタンの除去方法 |
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JP2008315724A Pending JP2009050854A (ja) | 2004-07-22 | 2008-12-11 | 窒化チタンの除去方法 |
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US (1) | US20060016783A1 (ja) |
EP (1) | EP1619268A3 (ja) |
JP (2) | JP2006035213A (ja) |
KR (2) | KR20060053879A (ja) |
CN (1) | CN100378911C (ja) |
TW (1) | TW200605226A (ja) |
Cited By (4)
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WO2014034396A1 (ja) * | 2012-08-27 | 2014-03-06 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
KR20180028919A (ko) | 2016-09-09 | 2018-03-19 | 가부시키가이샤 히다치 하이테크놀로지즈 | 에칭 방법 및 에칭 장치 |
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- 2005-07-20 JP JP2005209698A patent/JP2006035213A/ja active Pending
- 2005-07-20 TW TW094124606A patent/TW200605226A/zh unknown
- 2005-07-20 EP EP05015784A patent/EP1619268A3/en not_active Withdrawn
- 2005-07-22 CN CNB2005100875269A patent/CN100378911C/zh not_active Expired - Fee Related
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2008
- 2008-06-05 KR KR1020080053253A patent/KR20080058314A/ko not_active Application Discontinuation
- 2008-12-11 JP JP2008315724A patent/JP2009050854A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008150676A (ja) * | 2006-12-19 | 2008-07-03 | Air Water Inc | 硬質皮膜コーティング金属部材の再生方法 |
WO2012114611A1 (ja) * | 2011-02-22 | 2012-08-30 | セントラル硝子株式会社 | クリーニングガス及びそれを用いたリモートプラズマクリーニング方法 |
WO2014034396A1 (ja) * | 2012-08-27 | 2014-03-06 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
US9460896B2 (en) | 2012-08-27 | 2016-10-04 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
KR20180028919A (ko) | 2016-09-09 | 2018-03-19 | 가부시키가이샤 히다치 하이테크놀로지즈 | 에칭 방법 및 에칭 장치 |
US10325781B2 (en) | 2016-09-09 | 2019-06-18 | Hitachi High-Technologies Corporation | Etching method and etching apparatus |
Also Published As
Publication number | Publication date |
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US20060016783A1 (en) | 2006-01-26 |
JP2009050854A (ja) | 2009-03-12 |
EP1619268A3 (en) | 2006-06-14 |
CN100378911C (zh) | 2008-04-02 |
KR20080058314A (ko) | 2008-06-25 |
CN1725442A (zh) | 2006-01-25 |
TW200605226A (en) | 2006-02-01 |
EP1619268A2 (en) | 2006-01-25 |
KR20060053879A (ko) | 2006-05-22 |
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