CN1550838B - 液晶显示装置及其制造方法和驱动方法 - Google Patents

液晶显示装置及其制造方法和驱动方法 Download PDF

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Publication number
CN1550838B
CN1550838B CN200410062132.3A CN200410062132A CN1550838B CN 1550838 B CN1550838 B CN 1550838B CN 200410062132 A CN200410062132 A CN 200410062132A CN 1550838 B CN1550838 B CN 1550838B
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CN
China
Prior art keywords
electrode
storage
insulating film
region
gate
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Expired - Lifetime
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CN200410062132.3A
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English (en)
Chinese (zh)
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CN1550838A (zh
Inventor
郑柄厚
黄长元
裵秉成
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1019970079791A external-priority patent/KR100552280B1/ko
Priority claimed from KR1019980002311A external-priority patent/KR100247270B1/ko
Priority claimed from KR1019980002312A external-priority patent/KR100247271B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1550838A publication Critical patent/CN1550838A/zh
Application granted granted Critical
Publication of CN1550838B publication Critical patent/CN1550838B/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN200410062132.3A 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法 Expired - Lifetime CN1550838B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
KR1019970079791A KR100552280B1 (ko) 1997-12-31 1997-12-31 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR79791/1997 1997-12-31
KR79791/97 1997-12-31
KR1019980002311A KR100247270B1 (ko) 1998-01-26 1998-01-26 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR2311/98 1998-01-26
KR1019980002312A KR100247271B1 (ko) 1998-01-26 1998-01-26 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR2311/1998 1998-01-26
KR2312/1998 1998-01-26
KR2312/98 1998-01-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB981271723A Division CN1173218C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法

Publications (2)

Publication Number Publication Date
CN1550838A CN1550838A (zh) 2004-12-01
CN1550838B true CN1550838B (zh) 2010-05-12

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Family Applications (5)

Application Number Title Priority Date Filing Date
CN200410062132.3A Expired - Lifetime CN1550838B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200810166498.3A Expired - Lifetime CN101387802B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062130.4A Expired - Lifetime CN100595657C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CNB981271723A Expired - Lifetime CN1173218C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062131.9A Expired - Lifetime CN100595658C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
CN200810166498.3A Expired - Lifetime CN101387802B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062130.4A Expired - Lifetime CN100595657C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CNB981271723A Expired - Lifetime CN1173218C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062131.9A Expired - Lifetime CN100595658C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法

Country Status (3)

Country Link
US (5) US6317173B1 (cg-RX-API-DMAC7.html)
JP (2) JP3973787B2 (cg-RX-API-DMAC7.html)
CN (5) CN1550838B (cg-RX-API-DMAC7.html)

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KR101710179B1 (ko) * 2010-06-03 2017-02-27 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조 방법
KR20120129593A (ko) * 2011-05-20 2012-11-28 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR101818647B1 (ko) * 2011-06-14 2018-01-16 삼성디스플레이 주식회사 유기 발광 표시장치의 제조방법
KR101833235B1 (ko) * 2011-07-14 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
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KR101942980B1 (ko) * 2012-01-17 2019-01-29 삼성디스플레이 주식회사 반도체 디바이스 및 그 형성 방법
KR101987384B1 (ko) * 2012-11-23 2019-06-11 엘지디스플레이 주식회사 표시장치
KR102529270B1 (ko) * 2016-07-08 2023-05-09 삼성디스플레이 주식회사 표시 장치 및 이의 영상 표시 방법
JP7139636B2 (ja) * 2018-03-19 2022-09-21 株式会社リコー 表示素子及びその製造方法、表示装置、システム

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US6784950B2 (en) 2004-08-31
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US20030147022A1 (en) 2003-08-07
CN1550861A (zh) 2004-12-01
US20050161677A1 (en) 2005-07-28
US6549249B2 (en) 2003-04-15
JPH11271812A (ja) 1999-10-08
CN1224887A (zh) 1999-08-04
US7271857B2 (en) 2007-09-18
US6317173B1 (en) 2001-11-13
CN1173218C (zh) 2004-10-27
CN1550837A (zh) 2004-12-01
US20020012078A1 (en) 2002-01-31
JP2007199736A (ja) 2007-08-09
US7227597B2 (en) 2007-06-05
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CN1550838A (zh) 2004-12-01
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JP3973787B2 (ja) 2007-09-12

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