CN1316577C - 芯片尺度表面安装器件及其制造方法 - Google Patents

芯片尺度表面安装器件及其制造方法 Download PDF

Info

Publication number
CN1316577C
CN1316577C CNB018100015A CN01810001A CN1316577C CN 1316577 C CN1316577 C CN 1316577C CN B018100015 A CNB018100015 A CN B018100015A CN 01810001 A CN01810001 A CN 01810001A CN 1316577 C CN1316577 C CN 1316577C
Authority
CN
China
Prior art keywords
die
clip
electrode
contact
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018100015A
Other languages
English (en)
Chinese (zh)
Other versions
CN1430791A (zh
Inventor
M·斯坦丁
H·D·肖菲尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Science And Technology Americas
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of CN1430791A publication Critical patent/CN1430791A/zh
Application granted granted Critical
Publication of CN1316577C publication Critical patent/CN1316577C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/607—Located on parts of packages, e.g. on encapsulations or on package substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB018100015A 2000-04-04 2001-03-29 芯片尺度表面安装器件及其制造方法 Expired - Fee Related CN1316577C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US19452200P 2000-04-04 2000-04-04
US60/194,522 2000-04-04
US09/819,774 2001-03-28
US09/819,774 US6624522B2 (en) 2000-04-04 2001-03-28 Chip scale surface mounted device and process of manufacture

Publications (2)

Publication Number Publication Date
CN1430791A CN1430791A (zh) 2003-07-16
CN1316577C true CN1316577C (zh) 2007-05-16

Family

ID=26890112

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018100015A Expired - Fee Related CN1316577C (zh) 2000-04-04 2001-03-29 芯片尺度表面安装器件及其制造方法

Country Status (7)

Country Link
US (6) US6624522B2 (https=)
EP (1) EP1287553A4 (https=)
JP (3) JP3768158B2 (https=)
CN (1) CN1316577C (https=)
AU (1) AU2001249587A1 (https=)
TW (1) TW503487B (https=)
WO (1) WO2001075961A1 (https=)

Families Citing this family (169)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133634A (en) * 1998-08-05 2000-10-17 Fairchild Semiconductor Corporation High performance flip chip package
US6624522B2 (en) * 2000-04-04 2003-09-23 International Rectifier Corporation Chip scale surface mounted device and process of manufacture
US6661082B1 (en) * 2000-07-19 2003-12-09 Fairchild Semiconductor Corporation Flip chip substrate design
US6777786B2 (en) * 2001-03-12 2004-08-17 Fairchild Semiconductor Corporation Semiconductor device including stacked dies mounted on a leadframe
US6930397B2 (en) * 2001-03-28 2005-08-16 International Rectifier Corporation Surface mounted package with die bottom spaced from support board
US7119447B2 (en) * 2001-03-28 2006-10-10 International Rectifier Corporation Direct fet device for high frequency application
US7476964B2 (en) * 2001-06-18 2009-01-13 International Rectifier Corporation High voltage semiconductor device housing with increased clearance between housing can and die for improved flux flushing
US6784540B2 (en) 2001-10-10 2004-08-31 International Rectifier Corp. Semiconductor device package with improved cooling
US6891256B2 (en) * 2001-10-22 2005-05-10 Fairchild Semiconductor Corporation Thin, thermally enhanced flip chip in a leaded molded package
JP3627738B2 (ja) * 2001-12-27 2005-03-09 株式会社デンソー 半導体装置
US6677669B2 (en) * 2002-01-18 2004-01-13 International Rectifier Corporation Semiconductor package including two semiconductor die disposed within a common clip
US7122884B2 (en) * 2002-04-16 2006-10-17 Fairchild Semiconductor Corporation Robust leaded molded packages and methods for forming the same
GB0213094D0 (en) * 2002-06-07 2002-07-17 Power Innovations Ltd Lead frame
US6919599B2 (en) * 2002-06-28 2005-07-19 International Rectifier Corporation Short channel trench MOSFET with reduced gate charge
JP3942500B2 (ja) 2002-07-02 2007-07-11 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3853263B2 (ja) 2002-07-08 2006-12-06 Ｎｅｃエレクトロニクス株式会社 半導体装置
US7397137B2 (en) * 2002-07-15 2008-07-08 International Rectifier Corporation Direct FET device for high frequency application
US7579697B2 (en) * 2002-07-15 2009-08-25 International Rectifier Corporation Arrangement for high frequency application
US7061077B2 (en) * 2002-08-30 2006-06-13 Fairchild Semiconductor Corporation Substrate based unmolded package including lead frame structure and semiconductor die
US6777800B2 (en) * 2002-09-30 2004-08-17 Fairchild Semiconductor Corporation Semiconductor die package including drain clip
US6841865B2 (en) * 2002-11-22 2005-01-11 International Rectifier Corporation Semiconductor device having clips for connecting to external elements
US7088004B2 (en) * 2002-11-27 2006-08-08 International Rectifier Corporation Flip-chip device having conductive connectors
US6867481B2 (en) * 2003-04-11 2005-03-15 Fairchild Semiconductor Corporation Lead frame structure with aperture or groove for flip chip in a leaded molded package
US6946744B2 (en) * 2003-04-24 2005-09-20 Power-One Limited System and method of reducing die attach stress and strain
JP3759131B2 (ja) 2003-07-31 2006-03-22 Ｎｅｃエレクトロニクス株式会社 リードレスパッケージ型半導体装置とその製造方法
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
CN100483699C (zh) * 2003-10-24 2009-04-29 国际整流器公司 使用自傲互连材料的半导体器件封装
JP4312616B2 (ja) 2004-01-26 2009-08-12 Ｎｅｃエレクトロニクス株式会社 半導体装置
US8368211B2 (en) 2004-03-11 2013-02-05 International Rectifier Corporation Solderable top metalization and passivation for source mounted package
US20050269677A1 (en) * 2004-05-28 2005-12-08 Martin Standing Preparation of front contact for surface mounting
US7678680B2 (en) * 2004-06-03 2010-03-16 International Rectifier Corporation Semiconductor device with reduced contact resistance
US8390131B2 (en) 2004-06-03 2013-03-05 International Rectifier Corporation Semiconductor device with reduced contact resistance
US7235877B2 (en) * 2004-09-23 2007-06-26 International Rectifier Corporation Redistributed solder pads using etched lead frame
CN100524711C (zh) * 2004-09-23 2009-08-05 国际整流器公司 使用蚀刻引线框的半导体设备和半导体封装的制造方法
JP4153932B2 (ja) * 2004-09-24 2008-09-24 株式会社東芝 半導体装置および半導体装置の製造方法
US7692316B2 (en) * 2004-10-01 2010-04-06 International Rectifier Corporation Audio amplifier assembly
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
JP2006222298A (ja) 2005-02-10 2006-08-24 Renesas Technology Corp 半導体装置およびその製造方法
US7394151B2 (en) * 2005-02-15 2008-07-01 Alpha & Omega Semiconductor Limited Semiconductor package with plated connection
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7524701B2 (en) * 2005-04-20 2009-04-28 International Rectifier Corporation Chip-scale package
US7230333B2 (en) 2005-04-21 2007-06-12 International Rectifier Corporation Semiconductor package
TWI365516B (en) * 2005-04-22 2012-06-01 Int Rectifier Corp Chip-scale package
JP4490861B2 (ja) * 2005-04-25 2010-06-30 日立協和エンジニアリング株式会社 基板
US7682935B2 (en) * 2005-06-08 2010-03-23 International Rectifier Corporation Process of manufacture of ultra thin semiconductor wafers with bonded conductive hard carrier
US20070013053A1 (en) * 2005-07-12 2007-01-18 Peter Chou Semiconductor device and method for manufacturing a semiconductor device
US7514769B1 (en) * 2005-08-13 2009-04-07 National Semiconductor Corporation Micro surface mount die package and method
US7504733B2 (en) 2005-08-17 2009-03-17 Ciclon Semiconductor Device Corp. Semiconductor die package
JP2009508326A (ja) 2005-09-02 2009-02-26 インターナショナル レクティファイアー コーポレイション 半導体デバイスの電極のための保護バリア層
US7569927B2 (en) * 2005-09-21 2009-08-04 Microsemi Corporation RF power transistor package
US7560808B2 (en) * 2005-10-19 2009-07-14 Texas Instruments Incorporated Chip scale power LDMOS device
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7786558B2 (en) * 2005-10-20 2010-08-31 Infineon Technologies Ag Semiconductor component and methods to produce a semiconductor component
US7968984B2 (en) * 2005-10-25 2011-06-28 International Rectifier Corporation Universal pad arrangement for surface mounted semiconductor devices
US8089147B2 (en) * 2005-11-02 2012-01-03 International Rectifier Corporation IMS formed as can for semiconductor housing
JP4591330B2 (ja) * 2005-11-25 2010-12-01 パナソニック株式会社 電子部品接続構造および電子部品接続方法
US20070158796A1 (en) * 2005-12-09 2007-07-12 International Rectifier Corporation Semiconductor package
DE102005061015B4 (de) * 2005-12-19 2008-03-13 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauteils mit einem vertikalen Halbleiterbauelement
US8018056B2 (en) * 2005-12-21 2011-09-13 International Rectifier Corporation Package for high power density devices
US8698294B2 (en) * 2006-01-24 2014-04-15 Stats Chippac Ltd. Integrated circuit package system including wide flange leadframe
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US20070215997A1 (en) * 2006-03-17 2007-09-20 Martin Standing Chip-scale package
US7663212B2 (en) * 2006-03-21 2010-02-16 Infineon Technologies Ag Electronic component having exposed surfaces
US20070222087A1 (en) * 2006-03-27 2007-09-27 Sangdo Lee Semiconductor device with solderable loop contacts
US7923289B2 (en) * 2006-03-31 2011-04-12 International Rectifier Corporation Process for fabricating a semiconductor package
US7554188B2 (en) * 2006-04-13 2009-06-30 International Rectifier Corporation Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
US7541681B2 (en) * 2006-05-04 2009-06-02 Infineon Technologies Ag Interconnection structure, electronic component and method of manufacturing the same
US7757392B2 (en) 2006-05-17 2010-07-20 Infineon Technologies Ag Method of producing an electronic component
US7476978B2 (en) * 2006-05-17 2009-01-13 Infineon Technologies, Ag Electronic component having a semiconductor power device
US7626262B2 (en) * 2006-06-14 2009-12-01 Infineon Technologies Ag Electrically conductive connection, electronic component and method for their production
CN101506989B (zh) 2006-07-31 2014-02-19 威世-硅尼克斯 用于SiC肖特基二极管的钼势垒金属及制造工艺
US7719096B2 (en) * 2006-08-11 2010-05-18 Vishay General Semiconductor Llc Semiconductor device and method for manufacturing a semiconductor device
DE102006044690B4 (de) * 2006-09-22 2010-07-29 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zum Herstellen
DE102006047761A1 (de) * 2006-10-06 2008-04-10 Infineon Technologies Ag Halbleiterbauteil und Verfahren zu dessen Herstellung
KR100818101B1 (ko) * 2006-11-08 2008-03-31 주식회사 하이닉스반도체 웨이퍼 레벨 칩 사이즈 패키지
US8552543B2 (en) * 2006-11-13 2013-10-08 International Rectifier Corporation Semiconductor package
US8106501B2 (en) * 2008-12-12 2012-01-31 Fairchild Semiconductor Corporation Semiconductor die package including low stress configuration
DE102007007142B4 (de) * 2007-02-09 2008-11-13 Infineon Technologies Ag Nutzen, Halbleiterbauteil sowie Verfahren zu deren Herstellung
US7880280B2 (en) * 2007-02-16 2011-02-01 Infineon Technologies Ag Electronic component and method for manufacturing an electronic component
US9147644B2 (en) 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
US8083832B2 (en) * 2007-02-27 2011-12-27 International Rectifier Corporation Paste for forming an interconnect and interconnect formed from the paste
US8786072B2 (en) * 2007-02-27 2014-07-22 International Rectifier Corporation Semiconductor package
US7447041B2 (en) * 2007-03-01 2008-11-04 Delphi Technologies, Inc. Compression connection for vertical IC packages
US8686554B2 (en) * 2007-03-13 2014-04-01 International Rectifier Corporation Vertically mountable semiconductor device package
JP2008235837A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
GB2455940B (en) 2007-03-30 2010-11-24 Cambridge Semiconductor Ltd Forward power converter controllers
US7759777B2 (en) * 2007-04-16 2010-07-20 Infineon Technologies Ag Semiconductor module
US7838985B2 (en) * 2007-07-12 2010-11-23 Vishay General Semiconductor Llc Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers
US7915728B2 (en) * 2007-07-12 2011-03-29 Vishay General Semiconductor Llc Subassembly that includes a power semiconductor die and a heat sink having an exposed surface portion thereof
US7879652B2 (en) * 2007-07-26 2011-02-01 Infineon Technologies Ag Semiconductor module
US20090057855A1 (en) * 2007-08-30 2009-03-05 Maria Clemens Quinones Semiconductor die package including stand off structures
US8421214B2 (en) * 2007-10-10 2013-04-16 Vishay General Semiconductor Llc Semiconductor device and method for manufacturing a semiconductor device
US7701065B2 (en) * 2007-10-26 2010-04-20 Infineon Technologies Ag Device including a semiconductor chip having a plurality of electrodes
JP5153316B2 (ja) * 2007-12-21 2013-02-27 新光電気工業株式会社 半導体パッケージ用放熱板およびそのめっき方法
US7799614B2 (en) 2007-12-21 2010-09-21 Infineon Technologies Ag Method of fabricating a power electronic device
US8426960B2 (en) * 2007-12-21 2013-04-23 Alpha & Omega Semiconductor, Inc. Wafer level chip scale packaging
JP2009164442A (ja) * 2008-01-09 2009-07-23 Nec Electronics Corp 半導体装置
US8143729B2 (en) * 2008-01-25 2012-03-27 International Rectifier Corporation Autoclave capable chip-scale package
US7955893B2 (en) 2008-01-31 2011-06-07 Alpha & Omega Semiconductor, Ltd Wafer level chip scale package and process of manufacture
US7968378B2 (en) * 2008-02-06 2011-06-28 Infineon Technologies Ag Electronic device
US7972906B2 (en) * 2008-03-07 2011-07-05 Fairchild Semiconductor Corporation Semiconductor die package including exposed connections
US8637341B2 (en) * 2008-03-12 2014-01-28 Infineon Technologies Ag Semiconductor module
US7759163B2 (en) * 2008-04-18 2010-07-20 Infineon Technologies Ag Semiconductor module
US8680658B2 (en) * 2008-05-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Conductive clip for semiconductor device package
US8053891B2 (en) * 2008-06-30 2011-11-08 Alpha And Omega Semiconductor Incorporated Standing chip scale package
US7932180B2 (en) 2008-07-07 2011-04-26 Infineon Technologies Ag Manufacturing a semiconductor device via etching a semiconductor chip to a first layer
US7910992B2 (en) * 2008-07-15 2011-03-22 Maxim Integrated Products, Inc. Vertical MOSFET with through-body via for gate
US8441804B2 (en) * 2008-07-25 2013-05-14 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
US8110912B2 (en) 2008-07-31 2012-02-07 Infineon Technologies Ag Semiconductor device
US7982292B2 (en) 2008-08-25 2011-07-19 Infineon Technologies Ag Semiconductor device
US7767495B2 (en) 2008-08-25 2010-08-03 Infineon Technologies Ag Method for the fabrication of semiconductor devices including attaching chips to each other with a dielectric material
US7923350B2 (en) * 2008-09-09 2011-04-12 Infineon Technologies Ag Method of manufacturing a semiconductor device including etching to etch stop regions
US8373257B2 (en) * 2008-09-25 2013-02-12 Alpha & Omega Semiconductor Incorporated Top exposed clip with window array
US8710665B2 (en) 2008-10-06 2014-04-29 Infineon Technologies Ag Electronic component, a semiconductor wafer and a method for producing an electronic component
US7898067B2 (en) 2008-10-31 2011-03-01 Fairchild Semiconductor Corporaton Pre-molded, clip-bonded multi-die semiconductor package
US7994646B2 (en) * 2008-12-17 2011-08-09 Infineon Technologies Ag Semiconductor device
US7851856B2 (en) * 2008-12-29 2010-12-14 Alpha & Omega Semiconductor, Ltd True CSP power MOSFET based on bottom-source LDMOS
US8049312B2 (en) * 2009-01-12 2011-11-01 Texas Instruments Incorporated Semiconductor device package and method of assembly thereof
JP5420274B2 (ja) 2009-03-02 2014-02-19 パナソニック株式会社 半導体装置及びその製造方法
US8358014B2 (en) * 2009-05-28 2013-01-22 Texas Instruments Incorporated Structure and method for power field effect transistor
US8563360B2 (en) * 2009-06-08 2013-10-22 Alpha And Omega Semiconductor, Inc. Power semiconductor device package and fabrication method
US8222078B2 (en) * 2009-07-22 2012-07-17 Alpha And Omega Semiconductor Incorporated Chip scale surface mounted semiconductor device package and process of manufacture
JP5500936B2 (ja) * 2009-10-06 2014-05-21 イビデン株式会社 回路基板及び半導体モジュール
US7939370B1 (en) * 2009-10-29 2011-05-10 Alpha And Omega Semiconductor Incorporated Power semiconductor package
JP2011151109A (ja) * 2010-01-20 2011-08-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP5375708B2 (ja) * 2010-03-29 2013-12-25 パナソニック株式会社 半導体装置の製造方法
US8362606B2 (en) 2010-07-29 2013-01-29 Alpha & Omega Semiconductor, Inc. Wafer level chip scale package
EP2453476A1 (en) * 2010-11-12 2012-05-16 Nxp B.V. Semiconductor device packaging method and semiconductor device package
US20120175688A1 (en) * 2011-01-10 2012-07-12 International Rectifier Corporation Semiconductor Package with Reduced On-Resistance and Top Metal Spreading Resistance with Application to Power Transistor Packaging
US8546925B2 (en) 2011-09-28 2013-10-01 Texas Instruments Incorporated Synchronous buck converter having coplanar array of contact bumps of equal volume
US8906747B2 (en) * 2012-05-23 2014-12-09 Freescale Semiconductor, Inc. Cavity-type semiconductor package and method of packaging same
US8970035B2 (en) 2012-08-31 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structures for semiconductor package
US9202811B2 (en) 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
US9041067B2 (en) 2013-02-11 2015-05-26 International Rectifier Corporation Integrated half-bridge circuit with low side and high side composite switches
US9070721B2 (en) 2013-03-15 2015-06-30 Semiconductor Components Industries, Llc Semiconductor devices and methods of making the same
US8865523B2 (en) * 2013-03-15 2014-10-21 Alpha & Omega Semiconductor, Inc. Semiconductor package and fabrication method thereof
JP6167397B2 (ja) * 2013-04-26 2017-07-26 パナソニックＩｐマネジメント株式会社 半導体装置
DE102013212446A1 (de) * 2013-06-27 2015-01-15 Zf Friedrichshafen Ag Elektrische Schaltung und Verfahren zum Herstellen einer elektrischen Schaltung zur Ansteuerung einer Last
US20150001696A1 (en) * 2013-06-28 2015-01-01 Infineon Technologies Ag Semiconductor die carrier structure and method of manufacturing the same
US9536800B2 (en) 2013-12-07 2017-01-03 Fairchild Semiconductor Corporation Packaged semiconductor devices and methods of manufacturing
US9570379B2 (en) 2013-12-09 2017-02-14 Infineon Technologies Americas Corp. Power semiconductor package with integrated heat spreader and partially etched conductive carrier
US9653386B2 (en) 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
US9620475B2 (en) 2013-12-09 2017-04-11 Infineon Technologies Americas Corp Array based fabrication of power semiconductor package with integrated heat spreader
US9704787B2 (en) * 2014-10-16 2017-07-11 Infineon Technologies Americas Corp. Compact single-die power semiconductor package
US9214419B2 (en) * 2014-02-28 2015-12-15 Alpha And Omega Semiconductor Incorporated Power semiconductor device and preparation method thereof
JP6287341B2 (ja) * 2014-03-03 2018-03-07 セイコーエプソン株式会社 液体吐出装置および液体吐出装置の制御方法
TWI546906B (zh) 2014-03-14 2016-08-21 尼克森微電子股份有限公司 晶圓級扇出晶片的封裝結構及封裝方法
CN104916597B (zh) * 2014-03-14 2018-06-05 尼克森微电子股份有限公司 晶圆级扇出芯片的封装方法及封装结构
JP2015231027A (ja) * 2014-06-06 2015-12-21 住友電気工業株式会社 半導体装置
CN105448871B (zh) * 2014-08-18 2019-03-08 万国半导体股份有限公司 功率半导体器件及制备方法
EP3065172B1 (en) 2015-03-06 2024-12-04 Nexperia B.V. Semiconductor device
DE102015205695B4 (de) * 2015-03-30 2020-09-24 Robert Bosch Gmbh Halbleiterbauelement, Kontaktanordnung und Verfahren zur Herstellung
DE102015104996B4 (de) * 2015-03-31 2020-06-18 Infineon Technologies Austria Ag Halbleitervorrichtungen mit Steuer- und Lastleitungen von entgegengesetzter Richtung
CN104900546A (zh) * 2015-05-04 2015-09-09 嘉兴斯达半导体股份有限公司 一种功率模块的封装结构
CN111640742B (zh) * 2015-07-01 2021-04-20 新唐科技日本株式会社 半导体装置
DE102015221971A1 (de) * 2015-11-09 2017-05-11 Robert Bosch Gmbh Halbleiterchip mit lötbarer Vorderseite und Verfahren zur Herstellung eines Halbleiterchips
US10256168B2 (en) 2016-06-12 2019-04-09 Nexperia B.V. Semiconductor device and lead frame therefor
CN106711100A (zh) * 2016-08-22 2017-05-24 杰群电子科技（东莞）有限公司 一种半导体封装结构及加工方法
US10128170B2 (en) 2017-01-09 2018-11-13 Silanna Asia Pte Ltd Conductive clip connection arrangements for semiconductor packages
JP6894544B2 (ja) * 2018-07-17 2021-06-30 富士電機株式会社 半導体装置の製造方法
US11355470B2 (en) 2020-02-27 2022-06-07 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor device and methods of manufacturing semiconductor devices
EP4044226A1 (en) * 2021-02-16 2022-08-17 Nexperia B.V. A semiconductor device and a method of manufacturing of a semiconductor device
CN114156167A (zh) * 2021-11-30 2022-03-08 华虹半导体(无锡)有限公司 版图图形
CN115394657B (zh) * 2022-05-31 2024-10-01 浙江禾芯集成电路有限公司 一种应用于平面型功率器件的封装结构的封装方法
CN118369761B (zh) 2022-12-22 2025-08-01 新唐科技日本株式会社 蓄电包、半导体装置以及半导体装置的制造方法
US12464669B2 (en) 2023-02-24 2025-11-04 Amkor Technology Singapore Holding Pte. Ltd. Electronic devices and methods of manufacturing electronic devices

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901137A (en) * 1987-07-30 1990-02-13 Kabushiki Kaisha Toshiba Electronic apparatus having semiconductor device
US5047833A (en) * 1990-10-17 1991-09-10 International Rectifier Corporation Solderable front metal contact for MOS devices
JPH05129516A (ja) * 1991-11-01 1993-05-25 Hitachi Ltd 半導体装置
US5451544A (en) * 1993-10-15 1995-09-19 International Rectifier Corporation Method of manufacturing a back contact for semiconductor die
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
US5577656A (en) * 1994-01-06 1996-11-26 Harris Corporation Method of packaging a semiconductor device
CN1179626A (zh) * 1996-09-05 1998-04-22 国际整流器公司 一种改进的表面封装的大功率半导体封壳及其制造方法
CN1185656A (zh) * 1996-12-19 1998-06-24 Lg半导体株式会社 半导体封装结构及其制造方法
US5904499A (en) * 1994-12-22 1999-05-18 Pace; Benedict G Package for power semiconductor chips
WO2000008684A1 (en) * 1998-08-05 2000-02-17 Fairchild Semiconductor Corporation High performance flip chip package

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403438A (en) 1964-12-02 1968-10-01 Corning Glass Works Process for joining transistor chip to printed circuit
US3871014A (en) 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform solder wettable areas on the substrate
US3972062A (en) 1973-10-04 1976-07-27 Motorola, Inc. Mounting assemblies for a plurality of transistor integrated circuit chips
GB1487945A (en) 1974-11-20 1977-10-05 Ibm Semiconductor integrated circuit devices
US4454454A (en) 1983-05-13 1984-06-12 Motorola, Inc. MOSFET "H" Switch circuit for a DC motor
US4646129A (en) 1983-09-06 1987-02-24 General Electric Company Hermetic power chip packages
US4604644A (en) 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
US4639760A (en) 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
JPH07118514B2 (ja) * 1989-04-24 1995-12-18 株式会社東芝 半田バンプ型半導体装置
US5075759A (en) 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5182632A (en) 1989-11-22 1993-01-26 Tactical Fabs, Inc. High density multichip package with interconnect structure and heatsink
JP2984068B2 (ja) 1991-01-31 1999-11-29 株式会社日立製作所 半導体装置の製造方法
US5311402A (en) 1992-02-14 1994-05-10 Nec Corporation Semiconductor device package having locating mechanism for properly positioning semiconductor device within package
JP2833326B2 (ja) 1992-03-03 1998-12-09 松下電器産業株式会社 電子部品実装接続体およびその製造方法
JPH065401A (ja) 1992-06-23 1994-01-14 Mitsubishi Electric Corp チップ型抵抗素子及び半導体装置
JPH0637143A (ja) 1992-07-15 1994-02-10 Toshiba Corp 半導体装置および半導体装置の製造方法
US5394490A (en) 1992-08-11 1995-02-28 Hitachi, Ltd. Semiconductor device having an optical waveguide interposed in the space between electrode members
US5313366A (en) 1992-08-12 1994-05-17 International Business Machines Corporation Direct chip attach module (DCAM)
JPH06244231A (ja) 1993-02-01 1994-09-02 Motorola Inc 気密半導体デバイスおよびその製造方法
US5371404A (en) 1993-02-04 1994-12-06 Motorola, Inc. Thermally conductive integrated circuit package with radio frequency shielding
JP2795788B2 (ja) 1993-02-18 1998-09-10 シャープ株式会社 半導体チップの実装方法
US5703405A (en) 1993-03-15 1997-12-30 Motorola, Inc. Integrated circuit chip formed from processing two opposing surfaces of a wafer
US5510758A (en) 1993-04-07 1996-04-23 Matsushita Electric Industrial Co., Ltd. Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps
JP3258764B2 (ja) 1993-06-01 2002-02-18 三菱電機株式会社 樹脂封止型半導体装置の製造方法ならびに外部引出用電極およびその製造方法
JPH0745620A (ja) * 1993-07-26 1995-02-14 Hitachi Ltd 半導体装置およびその製造方法並びにその実装構造体
US5397921A (en) 1993-09-03 1995-03-14 Advanced Semiconductor Assembly Technology Tab grid array
US5455456A (en) 1993-09-15 1995-10-03 Lsi Logic Corporation Integrated circuit package lid
US5734201A (en) 1993-11-09 1998-03-31 Motorola, Inc. Low profile semiconductor device with like-sized chip and mounting substrate
US5367435A (en) 1993-11-16 1994-11-22 International Business Machines Corporation Electronic package structure and method of making same
US5454160A (en) 1993-12-03 1995-10-03 Ncr Corporation Apparatus and method for stacking integrated circuit devices
JPH07193184A (ja) 1993-12-27 1995-07-28 Fujitsu Ltd マルチチップモジュールの製造方法及びマルチチップモジュール
JP3073644B2 (ja) 1993-12-28 2000-08-07 株式会社東芝 半導体装置
US6486003B1 (en) * 1996-12-13 2002-11-26 Tessera, Inc. Expandable interposer for a microelectronic package and method therefor
JP3377867B2 (ja) 1994-08-12 2003-02-17 京セラ株式会社 半導体素子収納用パッケージ
JP2546192B2 (ja) 1994-09-30 1996-10-23 日本電気株式会社 フィルムキャリア半導体装置
US5532512A (en) 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
JP3138159B2 (ja) 1994-11-22 2001-02-26 シャープ株式会社 半導体装置、半導体装置実装体、及び半導体装置の交換方法
JPH08335653A (ja) 1995-04-07 1996-12-17 Nitto Denko Corp 半導体装置およびその製法並びに上記半導体装置の製造に用いる半導体装置用テープキャリア
US5655703A (en) 1995-05-25 1997-08-12 International Business Machines Corporation Solder hierarchy for chip attachment to substrates
US5674785A (en) 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
US5726502A (en) 1996-04-26 1998-03-10 Motorola, Inc. Bumped semiconductor device with alignment features and method for making the same
JPH1022336A (ja) * 1996-06-28 1998-01-23 Sanyo Electric Co Ltd 半導体装置の製造方法
US5814884C1 (en) * 1996-10-24 2002-01-29 Int Rectifier Corp Commonly housed diverse semiconductor die
US6051888A (en) 1997-04-07 2000-04-18 Texas Instruments Incorporated Semiconductor package and method for increased thermal dissipation of flip-chip semiconductor package
KR100219806B1 (ko) * 1997-05-27 1999-09-01 윤종용 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법
JPH1154673A (ja) 1997-07-31 1999-02-26 Nec Kansai Ltd 半導体装置
GB9725960D0 (en) 1997-12-08 1998-02-04 Westinghouse Brake & Signal Encapsulating semiconductor chips
JP3654485B2 (ja) * 1997-12-26 2005-06-02 富士通株式会社 半導体装置の製造方法
JP3097644B2 (ja) * 1998-01-06 2000-10-10 日本電気株式会社 半導体装置接続構造及び接続方法
US6423623B1 (en) * 1998-06-09 2002-07-23 Fairchild Semiconductor Corporation Low Resistance package for semiconductor devices
EP0966038A3 (en) * 1998-06-15 2001-02-28 Ford Motor Company Bonding of semiconductor power devices
EP0978871A3 (en) * 1998-08-05 2001-12-19 Harris Corporation A low power packaging design
US6268275B1 (en) * 1998-10-08 2001-07-31 Micron Technology, Inc. Method of locating conductive spheres utilizing screen and hopper of solder balls
KR20000057810A (ko) * 1999-01-28 2000-09-25 가나이 쓰토무 반도체 장치
JP4408475B2 (ja) * 1999-02-23 2010-02-03 三洋電機株式会社 ボンディングワイヤを採用しない半導体装置
US6744124B1 (en) * 1999-12-10 2004-06-01 Siliconix Incorporated Semiconductor die package including cup-shaped leadframe
US6624522B2 (en) 2000-04-04 2003-09-23 International Rectifier Corporation Chip scale surface mounted device and process of manufacture
US6362087B1 (en) * 2000-05-05 2002-03-26 Aptos Corporation Method for fabricating a microelectronic fabrication having formed therein a redistribution structure
JP3467454B2 (ja) 2000-06-05 2003-11-17 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6391687B1 (en) 2000-10-31 2002-05-21 Fairchild Semiconductor Corporation Column ball grid array package

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901137A (en) * 1987-07-30 1990-02-13 Kabushiki Kaisha Toshiba Electronic apparatus having semiconductor device
US5047833A (en) * 1990-10-17 1991-09-10 International Rectifier Corporation Solderable front metal contact for MOS devices
JPH05129516A (ja) * 1991-11-01 1993-05-25 Hitachi Ltd 半導体装置
US5451544A (en) * 1993-10-15 1995-09-19 International Rectifier Corporation Method of manufacturing a back contact for semiconductor die
US5577656A (en) * 1994-01-06 1996-11-26 Harris Corporation Method of packaging a semiconductor device
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
US5904499A (en) * 1994-12-22 1999-05-18 Pace; Benedict G Package for power semiconductor chips
CN1179626A (zh) * 1996-09-05 1998-04-22 国际整流器公司 一种改进的表面封装的大功率半导体封壳及其制造方法
CN1185656A (zh) * 1996-12-19 1998-06-24 Lg半导体株式会社 半导体封装结构及其制造方法
WO2000008684A1 (en) * 1998-08-05 2000-02-17 Fairchild Semiconductor Corporation High performance flip chip package

Also Published As

Publication number Publication date
EP1287553A4 (en) 2007-11-07
EP1287553A1 (en) 2003-03-05
JP2004500720A (ja) 2004-01-08
HK1057648A1 (en) 2004-04-08
US6890845B2 (en) 2005-05-10
US20050186707A1 (en) 2005-08-25
US6767820B2 (en) 2004-07-27
US20010048116A1 (en) 2001-12-06
AU2001249587A1 (en) 2001-10-15
US7253090B2 (en) 2007-08-07
US7476979B2 (en) 2009-01-13
JP2005354105A (ja) 2005-12-22
US6624522B2 (en) 2003-09-23
CN1430791A (zh) 2003-07-16
JP4343158B2 (ja) 2009-10-14
US7122887B2 (en) 2006-10-17
US20040026796A1 (en) 2004-02-12
TW503487B (en) 2002-09-21
WO2001075961A1 (en) 2001-10-11
US20040038509A1 (en) 2004-02-26
US20060220123A1 (en) 2006-10-05
JP3768158B2 (ja) 2006-04-19
JP2009105437A (ja) 2009-05-14
US20040224438A1 (en) 2004-11-11
WO2001075961A8 (en) 2002-02-07

Similar Documents

Publication Publication Date Title
CN1316577C (zh) 芯片尺度表面安装器件及其制造方法
JP4195380B2 (ja) 冷却を改善した半導体デバイスのパッケージ
US6756658B1 (en) Making two lead surface mounting high power microleadframe semiconductor packages
TWI399836B (zh) 晶圓級晶片尺寸封裝及製造方法
KR100369393B1 (ko) 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법
CN101685811B (zh) 基于基片的未模制封装
US9362210B2 (en) Leadframe and semiconductor package made using the leadframe
JP3420057B2 (ja) 樹脂封止型半導体装置
TWI495055B (zh) 半導體晶片封裝體及其製造方法
JP2005506691A5 (https=)
CN101685810B (zh) 用于半导体组件封装的夹片及半导体封装结构和封装方法
US7390698B2 (en) Packaged semiconductor device and method of manufacture using shaped die
US6392305B1 (en) Chip scale package of semiconductor
JP7339000B2 (ja) 半導体装置および半導体パッケージ
HK1057648B (en) Chip scale surface mounted device and process of manufacture
CN121620231A (zh) 实现可润湿翼侧的半导体封装件和相关方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: American California

Patentee after: Infineon science and technology Americas

Address before: American California

Patentee before: International Rectifier Corporation

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070516

Termination date: 20200329

CF01 Termination of patent right due to non-payment of annual fee