JP4153932B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP4153932B2 JP4153932B2 JP2005216894A JP2005216894A JP4153932B2 JP 4153932 B2 JP4153932 B2 JP 4153932B2 JP 2005216894 A JP2005216894 A JP 2005216894A JP 2005216894 A JP2005216894 A JP 2005216894A JP 4153932 B2 JP4153932 B2 JP 4153932B2
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- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 44
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Description
Claims (5)
- 第1導電型半導体基板と、
前記第1導電型半導体基板の一方の面に形成された第1の第1導電型層と、
前記第1の第1導電型層の表面の所定の領域に形成された第2導電型層と、
前記第2導電型層に接続するように形成された第1の主電極と、
前記第1導電型半導体基板の他方の面に形成された第2の主電極と、
前記第1導電型半導体基板および前記第1の第1導電型層を貫通して形成された貫通孔と、
前記貫通孔の側壁面に直接接するように形成され、前記第2の主電極に接続された導電部と、
前記第1の主電極と同じ面側に形成され、前記導電部と接続された電極パッド部と、
前記第1の第1導電型層の表面の所定の領域に、前記第2導電型層と接しないように形成された第2の第1導電型層を有し、
前記貫通孔が、前記第2導電型層との間に前記第2の第1導電型層が介挿される領域に形成されていることを特徴とする半導体装置。 - 前記第2導電型層は複数の穴を持つ平面形状を有し、これらの穴内に前記第2の第1導電型層が前記第2導電型層に接しないように形成されており、かつ前記第2の第1導電型層の中央部に前記貫通孔が形成されていることを特徴とする請求項1記載の半導体装置。
- 前記導電部と接続された前記電極パッド部は、前記第1の主電極上に絶縁層を介してオーバーラップして配置されていることを特徴とする請求項1または2記載の半導体装置。
- 前記貫通孔内の導電部を介して前記第2の主電極に接続された前記電極パッド部と、前記第1の主電極とは、平面形状において隣り合うように交互に配置されていることを特徴とする請求項2記載の半導体装置。
- 第1導電型半導体基板の素子面に第2導電型層を形成する工程と、
前記第1導電型半導体基板の前記素子面に、前記第2導電型層に接続するように第1の主電極を形成する工程と、
前記第1導電型半導体基板の前記素子面に、前記第2導電型層と接しないように第1導電型層を形成する工程と、
前記第1導電型半導体基板の裏面に第2の主電極を形成する工程と、
前記第2の主電極が形成された前記第1導電型半導体基板に、前記素子面側からレーザを照射し、前記第2導電型層との間に前記第1導電型層が介挿される領域に貫通孔を形成する工程と、
前記貫通孔の側壁面に直接接するように、前記第2の主電極に接続された導電部を形成する工程と、
前記第1導電型半導体基板の前記素子面に、前記導電部と接続された電極パッド部を形成する工程を備えることを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005216894A JP4153932B2 (ja) | 2004-09-24 | 2005-07-27 | 半導体装置および半導体装置の製造方法 |
US11/230,624 US7531876B2 (en) | 2004-09-24 | 2005-09-21 | Semiconductor device having power semiconductor elements |
Applications Claiming Priority (2)
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JP2004277960 | 2004-09-24 | ||
JP2005216894A JP4153932B2 (ja) | 2004-09-24 | 2005-07-27 | 半導体装置および半導体装置の製造方法 |
Publications (2)
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JP2006121041A JP2006121041A (ja) | 2006-05-11 |
JP4153932B2 true JP4153932B2 (ja) | 2008-09-24 |
Family
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JP2005216894A Expired - Fee Related JP4153932B2 (ja) | 2004-09-24 | 2005-07-27 | 半導体装置および半導体装置の製造方法 |
Country Status (2)
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US (1) | US7531876B2 (ja) |
JP (1) | JP4153932B2 (ja) |
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JP4788749B2 (ja) * | 2007-11-09 | 2011-10-05 | 株式会社デンソー | 半導体装置 |
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JP5458809B2 (ja) * | 2009-11-02 | 2014-04-02 | 富士電機株式会社 | 半導体装置 |
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2005
- 2005-07-27 JP JP2005216894A patent/JP4153932B2/ja not_active Expired - Fee Related
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US7531876B2 (en) | 2009-05-12 |
JP2006121041A (ja) | 2006-05-11 |
US20060071271A1 (en) | 2006-04-06 |
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