CN1316577C - 芯片尺度表面安装器件及其制造方法 - Google Patents

芯片尺度表面安装器件及其制造方法 Download PDF

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CN1316577C
CN1316577C CNB018100015A CN01810001A CN1316577C CN 1316577 C CN1316577 C CN 1316577C CN B018100015 A CNB018100015 A CN B018100015A CN 01810001 A CN01810001 A CN 01810001A CN 1316577 C CN1316577 C CN 1316577C
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tube core
electrode
contact
intermediate plate
semiconductor packages
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CN1430791A (zh
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M·斯坦丁
H·D·肖菲尔德
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Infineon science and technology Americas
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International Rectifier Corp USA
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Abstract

一种芯片尺度封装，具有一个金属氧化物半导体场效应管管芯，此管芯具有一个顶电极表面(37)，其被一层光敏液态环氧树脂(111)所覆盖，环氧树脂被光刻成图案以使电极(37)的一部分曝露在外，并用作钝化层或焊料掩模。在留下的液态环氧树脂层(111)的一部分上形成可焊接的接触层(40)。每个单独的管芯(30)以漏极边朝下安装在一金属夹片(100)内，或者以漏极边朝下安装在一个壳内，此时漏极(34)与一个从壳底(101)伸出的法兰边(105)处在同一平面内。

Description

芯片尺度表面安装器件及其制造方法
技术领域
本发明涉及半导体器件，更具体地说，涉及一种新型半导体器件的低成本制造方法。
背景技术
半导体器件和它们外壳是广为人知的。在先有技术的器件中，外壳的面积常常比半导体器件的面积大好多倍。另外，在许多现有的半导体器件封装中，热量只是从管芯的一面(通常是底面)散出。还有，在当前的封装中，由于采用的是单个器件的处理方法而使制造过程变得很昂贵。
更具体地说，目前的半导体器件(特别是功率MOS门器件)中，顶面接触件(源极)一般是包含1.0％硅的铝接触件(以后就称为铝接触件)。之所以采用铝接触件是因为它很适合于晶片的制造工艺过程。然而，由于很难与这种铝接触件形成电连接，通常要采用一种导线连接工艺，将导线通过超声方法连到下面的铝接触件上。这些导线固定连接点的面积很有限，因而电阻源(RDSON)和工作过程中产生的热量也不大。但是，如美国专利5,451,544等所表明的那样，底部漏极接触件一般是一个三金属片，它很容易焊接或用其它方法电连接到一个大面积接触面上，而不必用导线连接的方式。热量主要是在背接触面处从硅管芯上散出去，虽然大部分热量是产生在顶面的连接点和导线连接处。
还知道，可以把可焊接的顶面接触件做在管芯的顶面上，如美国专利5,047,833所示。然而，与管芯面积相比，用于这种可焊接顶面接触件结构的封装具有很大的“占地面积”。
希望封装结构及其制造工艺能做到对同样的管芯采用较小的封装，而同时改善其电性能(如MOS门半导体器件的RDSON)。同时还希望生产这类器件能采用容许批量处理的工艺，并减少生产线上的设备和降低成本。
发明内容
根据本发明，提供了一种半导体器件封装，包括：一带有一腹板的内表面和一伸出表面的杯形夹片；一半导体管芯，其具有一电连接于所述腹板的内表面的第一电极；和一可焊接控制电极和一可焊接第二电极与所述伸出表面在一个共同平面上。
根据本发明的一种形式，将MOS门器件晶片的源边用一层钝化层盖住，最好是用光敏液态环氧，或一层氮化硅等材料。采用旋转，屏蔽，或其它方式将液态环氧淀积在晶片表面上而对晶片进行涂复。然后让材料干燥，并用标准的光刻技术让已涂复的晶片曝光以使晶片成象，同时在钝化层上形成一些开孔，以产生一些底层源金属的间隔曝光表面区域和一个类似的开口，将每个管芯的底层门电极曝光在晶片上。因此，这种新型的钝化层不仅用作普通的钝化层，而且还用作涂敷抗蚀剂(如需要的话)和焊料模，标出并形成焊料区。新型钝化层中的开口可以做成一直贯穿一层普通的可焊接的底层上部金属，如钛/钨/镍/银金属。或者，如果底层金属是更为普通的铝金属，则可将已曝光的铝镀上镍和金或其它的金属，以形成一个可焊接的表面，这时采用钝化层作为一种涂敷抗蚀剂。与将普通的导线固定到铝电极的高电阻连接相比，涂敷金属部分的顶面是容易焊接或者与低电阻接触的。
源极接触区可能具有各种几何形状，甚至可以构成一个单一的大面积区域。
然后将晶片锯成或用其它方法分成单个的管芯。接着将单个管芯的源边朝下，并采用导电环氧或焊料等将U形或杯形的经部分涂敷的漏极与管芯的可焊接漏极边相连，以将漏极固定于管芯的底漏极。漏极的腿的底部与管芯的源边表面(即接触件伸出部分的顶端)处在同一平面内。然后将管芯的外表面从上面塑封在一个模盘内。可以把大量具有这种漏极的管芯同时塑封在一个模盘内。
可以用一片惰性材料，或者将组件的全部或一部分从上面塑封起来以保护固定材料。生产中可以采用一个铅框或连续的带条来制造这些部件，或者将各器件塑封在单一的块中并从该块中将器件单分出来。
塑封后对器件进行测试并用激光打上标记，然后再锯在单个的器件。
附图说明
图1是一个可按本发明进行封装的单个功率的金属氧化物半导体场效应晶体管(MOSFET)管芯的顶视图。
图2是沿图1的2-2线的剖视图。
图3是图1的管芯按本发明处理后的顶视图，它包含一些分离的“可焊接的”源接触区和一个“可焊接的”门区。
图4是沿图3的4-4线的剖视图。
图5是具有改变的源接触模式的象图3那样的管芯的视图。
图6是具有更大面积的“可焊接”源接触模式的象图3和5那样的管芯的视图。
图7是利用本发明的工艺形成的另一种接触件布局(带角门)的顶视图。
图8是沿图7的8-8线的剖视图。
图9是本发明一种漏极夹片的第一种形式的透视图。
图10是图9的漏极夹片的顶视图，其中模塑块的开口形成于夹片内。
图11是图3和4的管芯以及图9的夹片的局部底视图。
图12是沿图11的12-12线剖开的图11的剖视图。
图13是将图11和12从上面塑封到横盘后的部装图。
图14是沿图13的14-14线剖开的图13的剖面图。
图15是沿图13的15-15线剖开的图13的剖面图。
图16是漏极夹片的另一种具体实施装置的透视图。
图17是图16的夹片的顶视图。
图18是图16和17的夹片组件的底视图，其中的管芯是图3和图4那种普通类型的管芯经过从上面塑封。
图19是沿图18的19-19线切开的剖面图。
图20是一种杯形漏极夹片的底视图，其中管芯的布局为图7和图8所示。
图21是沿图20的21-21线切开的剖面图。
图22表示在MOSFET管芯分开之前的一个晶片。
图23表示在图22的晶片源极表面上形成一个钝化层并作出一定图形的各工艺步骤。
图24表示在图23的钝化层顶部涂敷金属的过程。
具体实施方式
本发明为在管芯的两对面具有功率电极或其它电极的那类半导体管芯提供一种新型的封装，并能以低成本的制造方法使两个电极的表面安装在一个公共的支撑面(例如在印刷电路板的金属化图案)上。虽然本发明是参照一种垂直形导电功率MOSFET(一面上有门和源电极，相对的一面有漏极)来描述的，但本发明同样可用于IGBT，闸流晶体管，二极管，及各种类似的布局。
因此，正如我们要将看到的，一种新型的管芯夹片至少围绕并接触一部分背面电极(MOSFET中的一个漏极)，同时夹片的至少一条腿伸出管芯的边缘，并终止于一个平面内，此平面与前面接触件(MOSFET的门极和源极)同平面，但与它彼此绝缘。因此，这种器件能围绕管芯和夹片的背面和侧面从上面模塑，以将所有管芯电极的处在同一平面内的平的可焊接接触面座安置在一个安装表面上。
所有顶部接触面都是采用一个新型的焊接模来形成的，以在管芯顶面形成容易焊接的接触面，这时管芯还处在晶片阶段。然后将漏极夹片与分开后的管芯相连并经批量模塑工艺从上面模制。
图1示出一种可应用本发明的典型功率MOSFET的管芯30。该管芯30可以是如美国专利5,795,793中所示的那种类型，但也可以是具有一个结的任何种类的管芯，这个结包含硅基体31，顶层铝(即含1.0％硅的铝)源电极32，一个铝门电极33和一个底层体漏极34(它可以是一个普通的易于焊接的三元金属)。顶面铝层可以是任何其它适宜的金属材料。通常利用引线接合将铝电极32和33连起来。
下面将会谈到，按本发明要将一些易于焊接的接触件36固定到(或形成在)源极上，且如图3和4所示，接触件37被固定在门电极33上。对于银顶金属管芯，接触件36和37稍稍比钝化层38的厚度小一点；而对于镀铝顶金属管芯，则为钝化层38厚度的一半左右。平的接触顶面处在一个平面内。与这些接触面的触点是由焊膏形成的，焊膏的最小可印刷厚度约为钝化层38厚度的4至5倍。
接触件36的图形可取不同的形式，如图5、11、18所示的那些。另外，对图6、7、8的管芯，也可采用一个大面积可焊接接触件，如源接触件40或41。形成接触件36、37和40的金属化工艺将在后面描述。
在形成具有如图3至8所示管芯的新型封装时，要采用如图9所示的新形导电涂敷(或部分涂敷)金属夹片45。夹片45可以是一种铜合金，且至少有部分镀银的表面，在此表面上制成与其它表面的接触。
夹片45具有普通的“U形”形状，其腿46很短，如从表面47测量至接触柱36、37的自由表面，再加上粘接剂(用来将漏极连到夹片的薄平腹板48的经涂敷的内表面47)的厚度，腿46的长度稍微比管芯30的厚度大一些。例如，夹片沿腿46整个长度的总厚度为0.7mm，而从表面47至腿46自由端的长度约为0.39mm。两腿46之间的距离与管芯的尺寸有关，如对于国际整流器公司(InternationalRectifier Corporation)的尺寸为4.6的管芯，采用5.6mm的距离，每条腿46的总宽度约为1.5mm
也可以在夹片45上形成模塑锁眼49和50，如图10所示。
按照本发明的一种形式，管芯30的可焊接底面漏极34是用导电胶60电连接并固定到漏极夹片45的经过镀金属的内表面上，如图12所示。这种胶可以是适当固化的加银环氧树脂材料。在管芯30的侧边和夹片45的腿46的相对边留有间隙61和62。
此结构的尺寸应控制成使得腿46的自由表面(漏极连接部)与接触柱36和37自由表面处在同一平面内。
以后就如图13、14和15所示，将图11和12的器件用模塑料70封装在一个模塑盘内。模塑料70处于夹片45的整个外露表面之上，但不包括腿46的自由外表面。如图13和15所示，模塑料填入间隙61和62中。现在就可以把器件表面安装到印刷电路板的导线上，这些导线与接触件36、37和46对齐。
图16至19为采用一种不同夹片形状的本发明的另一种实施装置。图16和17的夹片80有一块腹板81和三个分段的伸出腿82、83和84。首先把一个具有伸出接触件36和37的管芯30在其漏极触片(未示)处与腹板81粘结(如图18和19所示)，使得接触件36、37和漏极夹片伸出部分82、83及84处于一个共同的平面内。然后在一个合适的模塑盘内用模塑料70在器件上进行模塑。
图20和21表示本发明的另一种实施装置，其中将图7和8的管芯安装在杯形夹片100内，此夹片是用镀银的铜合金制成的。夹片100的内部区域的长度和宽度都比管芯30大些，且管芯30的底面漏极用加银的(导电)环氧树脂102与腹板的内表面101(图21)相连。环氧树脂被固化。最好环绕管芯边缘施加一圈低应力高粘结性的环氧树脂103，以将封装密封并增加其结构强度。
可焊接接触件40的顶面与漏极夹片伸出的表面105处在同一平面内。因而全部接触件105，40和37都与印刷电路板上的接线对齐。漏极接触件可以是任何适当的形状，而且需要的话可以构成一个单一的接触边。
图22至24表示在普通管芯铝电极上形成导电柱的一种新工艺。图中标出了在管芯分开前在晶片110内的一些相同的管芯，每个管芯有一个接触件37和分开的源电极(沿有标号)。虽然仍然是晶片的形式，但晶片110的顶面被涂上了一个可光成象的焊料掩模111。掩模111是一种光敏液态环氧树脂，它用作钝化层，一种涂敷抗蚀剂(如需要的话)和一种焊料掩模，用来确定和形成焊料区。但也可以采用其它的掩模材料，如氮化硅等。利用普通的光栅，可以通过掩模在管芯顶层金属上的底层源极和门极接触件上形成许多开孔111a至111d。也可以采用激光刻蚀工艺来形成这些开孔。
如图24所示，在此之后将一系列的金属112镀到晶片的顶面上，且镀层与源极32的金属(以及其它的电极)相粘结，构成与源极的接触件112a至112d，以及一个类似的至门极的接触件，源极是通过开孔111a至111d而露在外面的。金属112a至112d的第一层可以是镍(它与铝接触良好)，下一层是金。在镍下面也可以是一层铜或锡等，最后是一个容易焊接的金属顶面(如银)。
然后将晶片锯开，让管芯沿线112和113分离，使管芯分开。典型的管芯30的外形为图3至8所示，而且有一些可焊接的源极接触件和门极接触件，它们都伸到绝缘表面的上面。
此后将被分开的管芯的漏极源极边朝下置于导电夹片内，夹片的内部镀有银或其它的导电层。把管芯用普通的粘固材料(如前面讲过的导电环氧树脂)粘到夹片上。夹片/外罩可以做成铅框的形式，以后可将器件从铅框中分离出来。
虽然本发明是参照一些特定的实施装置来描述的，但本领域技术人员显然明白，可以对它们作许多的修改和变型。因此，本发明并不局限于上面的公布具体内容，其范围将由下面的权利要求书予以界定。

Claims (6)

1.一种半导体器件封装，包括：
一带有一腹板的内表面(101)和一伸出表面(105)的杯形夹片(100)；
一半导体管芯，其具有一电连接于所述腹板的内表面(101)的第一电极；和
一可焊接控制电极(37)和一可焊接第二电极(101)与所述伸出表面在一个共同平面上。
2.如权利要求1所述的半导体器件封装，其特征在于，所述半导体管芯是一个功率金属氧化物半导体场效应晶体管。
3.如权利要求1所述的半导体器件封装，其特征在于，所述第一电极是一个功率金属氧化物半导体场效应晶体管的漏极接触件。
4.如权利要求1所述的半导体器件封装，其特征在于，所述第一电极由一层导电环氧树脂电连接到所述腹板内表面(101)。
5.如权利要求1所述的半导体器件封装，其特征在于，所述杯形夹片是镀银的。
6.如权利要求1所述的半导体器件封装，其特征在于，还包括环绕所述管芯的一圈环氧树脂(103)。
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US7122887B2 (en) 2006-10-17
US20010048116A1 (en) 2001-12-06
US7253090B2 (en) 2007-08-07
JP2005354105A (ja) 2005-12-22
JP2009105437A (ja) 2009-05-14
HK1057648A1 (en) 2004-04-08
EP1287553A4 (en) 2007-11-07
EP1287553A1 (en) 2003-03-05
JP3768158B2 (ja) 2006-04-19
JP4343158B2 (ja) 2009-10-14
US6767820B2 (en) 2004-07-27
US20040224438A1 (en) 2004-11-11
CN1430791A (zh) 2003-07-16
TW503487B (en) 2002-09-21
US20040038509A1 (en) 2004-02-26
US20040026796A1 (en) 2004-02-12
US6890845B2 (en) 2005-05-10
US20060220123A1 (en) 2006-10-05
WO2001075961A1 (en) 2001-10-11
US6624522B2 (en) 2003-09-23
JP2004500720A (ja) 2004-01-08
AU2001249587A1 (en) 2001-10-15
US20050186707A1 (en) 2005-08-25
US7476979B2 (en) 2009-01-13
WO2001075961A8 (en) 2002-02-07

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