CN1278292C - 有源矩阵型显示装置 - Google Patents

有源矩阵型显示装置 Download PDF

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Publication number
CN1278292C
CN1278292C CNB031406548A CN03140654A CN1278292C CN 1278292 C CN1278292 C CN 1278292C CN B031406548 A CNB031406548 A CN B031406548A CN 03140654 A CN03140654 A CN 03140654A CN 1278292 C CN1278292 C CN 1278292C
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CN
China
Prior art keywords
film
display device
opposite electrode
electrode
active matrix
Prior art date
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Expired - Lifetime
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CNB031406548A
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English (en)
Chinese (zh)
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CN1482584A (zh
Inventor
汤田坂一夫
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Seiko Epson Corp
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Seiko Epson Corp
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Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1482584A publication Critical patent/CN1482584A/zh
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Publication of CN1278292C publication Critical patent/CN1278292C/zh
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/878Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB031406548A 1997-08-29 1998-08-25 有源矩阵型显示装置 Expired - Lifetime CN1278292C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23492197A JP3830238B2 (ja) 1997-08-29 1997-08-29 アクティブマトリクス型装置
JP234921/1997 1997-08-29
JP234921/97 1997-08-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB988015846A Division CN1138457C (zh) 1997-08-29 1998-08-25 有源矩阵型显示装置

Publications (2)

Publication Number Publication Date
CN1482584A CN1482584A (zh) 2004-03-17
CN1278292C true CN1278292C (zh) 2006-10-04

Family

ID=16978379

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB031406548A Expired - Lifetime CN1278292C (zh) 1997-08-29 1998-08-25 有源矩阵型显示装置
CNB988015846A Expired - Lifetime CN1138457C (zh) 1997-08-29 1998-08-25 有源矩阵型显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB988015846A Expired - Lifetime CN1138457C (zh) 1997-08-29 1998-08-25 有源矩阵型显示装置

Country Status (8)

Country Link
US (2) US6359606B1 (enExample)
EP (1) EP0961525B1 (enExample)
JP (1) JP3830238B2 (enExample)
KR (1) KR100483225B1 (enExample)
CN (2) CN1278292C (enExample)
DE (1) DE69824392T2 (enExample)
TW (1) TW426841B (enExample)
WO (1) WO1999012394A1 (enExample)

Families Citing this family (157)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW578130B (en) 1997-02-17 2004-03-01 Seiko Epson Corp Display unit
US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP3580092B2 (ja) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
WO1999010862A1 (en) * 1997-08-21 1999-03-04 Seiko Epson Corporation Active matrix display
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
US6492769B1 (en) * 1998-12-25 2002-12-10 Canon Kabushiki Kaisha Electron emitting device, electron source, image forming apparatus and producing methods of them
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
TW444257B (en) * 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
JP4094437B2 (ja) * 1999-06-04 2008-06-04 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP4532453B2 (ja) * 1999-06-04 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置の作製方法
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
JP4532452B2 (ja) * 1999-06-04 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置
JP4515349B2 (ja) * 1999-06-04 2010-07-28 株式会社半導体エネルギー研究所 電気光学装置
JP4515469B2 (ja) * 1999-06-04 2010-07-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP4730994B2 (ja) * 1999-06-04 2011-07-20 株式会社半導体エネルギー研究所 電気光学装置及びその作製方法並びに電子装置
TW556357B (en) * 1999-06-28 2003-10-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
JP4497596B2 (ja) * 1999-09-30 2010-07-07 三洋電機株式会社 薄膜トランジスタ及び表示装置
JP2001102169A (ja) 1999-10-01 2001-04-13 Sanyo Electric Co Ltd El表示装置
JP2001109405A (ja) * 1999-10-01 2001-04-20 Sanyo Electric Co Ltd El表示装置
JP2001109395A (ja) * 1999-10-01 2001-04-20 Sanyo Electric Co Ltd El表示装置
JP4780826B2 (ja) * 1999-10-12 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW535454B (en) * 1999-10-21 2003-06-01 Semiconductor Energy Lab Electro-optical device
US6587086B1 (en) * 1999-10-26 2003-07-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2001126867A (ja) * 1999-10-26 2001-05-11 Seiko Epson Corp 表示装置の製造方法
JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
CN1187846C (zh) * 1999-11-29 2005-02-02 皇家菲利浦电子有限公司 有机电致发光器件及其制造方法
JP4906145B2 (ja) * 1999-11-29 2012-03-28 株式会社半導体エネルギー研究所 El表示装置
JP2001175198A (ja) 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI252592B (en) 2000-01-17 2006-04-01 Semiconductor Energy Lab EL display device
JP2001230077A (ja) * 2000-02-18 2001-08-24 Dainippon Printing Co Ltd エレクトロルミネッセンス素子の製造方法
TW525305B (en) * 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
JP4831873B2 (ja) * 2000-02-22 2011-12-07 株式会社半導体エネルギー研究所 自発光装置及びその作製方法
US7129918B2 (en) * 2000-03-10 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving electronic device
JP4618918B2 (ja) * 2000-03-27 2011-01-26 株式会社半導体エネルギー研究所 自発光装置の作製方法
US7301276B2 (en) * 2000-03-27 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method of manufacturing the same
JP4889872B2 (ja) * 2000-04-17 2012-03-07 株式会社半導体エネルギー研究所 発光装置及びそれを用いた電気器具
TW493282B (en) * 2000-04-17 2002-07-01 Semiconductor Energy Lab Self-luminous device and electric machine using the same
JP4713010B2 (ja) * 2000-05-08 2011-06-29 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4860052B2 (ja) * 2000-05-12 2012-01-25 株式会社半導体エネルギー研究所 発光装置
US8610645B2 (en) 2000-05-12 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
TW554637B (en) * 2000-05-12 2003-09-21 Semiconductor Energy Lab Display device and light emitting device
US7339317B2 (en) * 2000-06-05 2008-03-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers
US7430025B2 (en) * 2000-08-23 2008-09-30 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
US6864628B2 (en) * 2000-08-28 2005-03-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound
JP2002083691A (ja) * 2000-09-06 2002-03-22 Sharp Corp アクティブマトリックス駆動型有機led表示装置及びその製造方法
JP2002184569A (ja) * 2000-10-03 2002-06-28 Semiconductor Energy Lab Co Ltd 発光装置
US6924594B2 (en) * 2000-10-03 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2005100992A (ja) * 2000-10-26 2005-04-14 Semiconductor Energy Lab Co Ltd 発光装置
US6664732B2 (en) 2000-10-26 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4632337B2 (ja) * 2000-11-10 2011-02-16 株式会社半導体エネルギー研究所 発光装置
TW522577B (en) 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
TW525402B (en) * 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
SG118110A1 (en) 2001-02-01 2006-01-27 Semiconductor Energy Lab Organic light emitting element and display device using the element
US6992439B2 (en) 2001-02-22 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing structure for protecting organic light emitting element
JP4101529B2 (ja) * 2001-02-22 2008-06-18 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP3608614B2 (ja) 2001-03-28 2005-01-12 株式会社日立製作所 表示装置
JP4801278B2 (ja) 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
TW588570B (en) * 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
JP2003076301A (ja) * 2001-09-07 2003-03-14 Matsushita Electric Ind Co Ltd 発光素子、及びそれを用いた表示装置
JP4019690B2 (ja) * 2001-11-02 2007-12-12 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
TWI250498B (en) * 2001-12-07 2006-03-01 Semiconductor Energy Lab Display device and electric equipment using the same
CN1209662C (zh) * 2001-12-17 2005-07-06 精工爱普生株式会社 显示装置及电子机器
JP4182467B2 (ja) 2001-12-27 2008-11-19 セイコーエプソン株式会社 回路基板、電気光学装置及び電子機器
KR100467943B1 (ko) * 2001-12-28 2005-01-24 엘지.필립스 엘시디 주식회사 유기 전계발광소자와 그 제조방법
US7038377B2 (en) 2002-01-16 2006-05-02 Seiko Epson Corporation Display device with a narrow frame
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP3818261B2 (ja) 2002-01-24 2006-09-06 セイコーエプソン株式会社 発光装置及び電子機器
TWI258317B (en) 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
JP4310984B2 (ja) * 2002-02-06 2009-08-12 株式会社日立製作所 有機発光表示装置
EP1343206B1 (en) 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
JP4197233B2 (ja) * 2002-03-20 2008-12-17 株式会社日立製作所 表示装置
CN101488481B (zh) * 2002-05-28 2011-05-11 精工爱普生株式会社 发光装置和电子仪器
JP3778176B2 (ja) * 2002-05-28 2006-05-24 セイコーエプソン株式会社 発光装置および電子機器
KR20030093016A (ko) * 2002-06-01 2003-12-06 삼성에스디아이 주식회사 유기 전계발광 소자
JP4001066B2 (ja) 2002-07-18 2007-10-31 セイコーエプソン株式会社 電気光学装置、配線基板及び電子機器
US7150537B2 (en) * 2002-08-16 2006-12-19 Infocus Corporation Projection television device and screen
JP3729262B2 (ja) 2002-08-29 2005-12-21 セイコーエプソン株式会社 エレクトロルミネセンス装置及び電子機器
JP2004095482A (ja) * 2002-09-03 2004-03-25 Chi Mei Electronics Corp 画像表示装置
JP3922374B2 (ja) 2002-09-25 2007-05-30 セイコーエプソン株式会社 電気光学装置、マトリクス基板、及び電子機器
JP3997888B2 (ja) 2002-10-25 2007-10-24 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法及び電子機器
JP4042548B2 (ja) * 2002-11-29 2008-02-06 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100895313B1 (ko) * 2002-12-11 2009-05-07 삼성전자주식회사 유기 발광 표시판
US7710019B2 (en) 2002-12-11 2010-05-04 Samsung Electronics Co., Ltd. Organic light-emitting diode display comprising auxiliary electrodes
KR20040055337A (ko) * 2002-12-20 2004-06-26 엘지.필립스 엘시디 주식회사 액정표시장치 및 그의 구동장치
KR100521272B1 (ko) * 2002-12-20 2005-10-12 삼성에스디아이 주식회사 휘도가 개선된 유기전계 발광표시장치
KR100490625B1 (ko) * 2003-02-20 2005-05-17 삼성에스디아이 주식회사 화상 표시 장치
JP2004361424A (ja) * 2003-03-19 2004-12-24 Semiconductor Energy Lab Co Ltd 素子基板、発光装置及び発光装置の駆動方法
JP2004304009A (ja) * 2003-03-31 2004-10-28 Canon Inc 有機薄膜トランジスタ
JP2006523003A (ja) * 2003-04-08 2006-10-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 両面発光装置に係る発明
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
US7221095B2 (en) 2003-06-16 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for fabricating light emitting device
US7161184B2 (en) * 2003-06-16 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7224118B2 (en) 2003-06-17 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode
US20040263072A1 (en) * 2003-06-24 2004-12-30 Joon-Young Park Flat panel display
SG142140A1 (en) 2003-06-27 2008-05-28 Semiconductor Energy Lab Display device and method of manufacturing thereof
KR20050005085A (ko) * 2003-07-01 2005-01-13 엘지전자 주식회사 유기 전계발광소자 및 그의 제조 방법
KR100544123B1 (ko) * 2003-07-29 2006-01-23 삼성에스디아이 주식회사 평판표시장치
EP1511095A3 (en) * 2003-08-19 2011-02-23 LG Display Co., Ltd. Organic electroluminescent device and method of manufacturing the same
KR100551046B1 (ko) * 2003-08-28 2006-02-09 삼성에스디아이 주식회사 유기 이엘 소자
CN100411186C (zh) * 2003-10-29 2008-08-13 铼宝科技股份有限公司 有机发光显示面板
US7286120B2 (en) * 2003-11-12 2007-10-23 Hewlett-Packard Development Company, L.P. Large area display and method of manufacturing same
KR100611147B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 유기전계발광표시장치
JP4686122B2 (ja) * 2003-11-28 2011-05-18 東芝モバイルディスプレイ株式会社 アクティブマトリクス型表示装置及びその製造方法
JP4507611B2 (ja) * 2004-01-29 2010-07-21 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置、及び電子機器
US7538488B2 (en) * 2004-02-14 2009-05-26 Samsung Mobile Display Co., Ltd. Flat panel display
JP4281584B2 (ja) * 2004-03-04 2009-06-17 セイコーエプソン株式会社 半導体装置の製造方法
KR100615212B1 (ko) * 2004-03-08 2006-08-25 삼성에스디아이 주식회사 평판 표시 장치
KR100684712B1 (ko) * 2004-03-09 2007-02-20 삼성에스디아이 주식회사 발광 표시 장치
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US7868343B2 (en) 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US7268498B2 (en) 2004-04-28 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5222455B2 (ja) * 2004-04-28 2013-06-26 株式会社半導体エネルギー研究所 表示装置
KR100698695B1 (ko) * 2004-06-25 2007-03-23 삼성에스디아이 주식회사 발광 표시장치 및 그 제조방법
TWI279752B (en) * 2004-09-21 2007-04-21 Casio Computer Co Ltd Transistor array substrate, display panel and manufacturing method of display panel
TWI302644B (en) * 2004-09-29 2008-11-01 Seiko Epson Corp Electro-optical device, image forming apparatus, and image reader
JP2006114585A (ja) * 2004-10-13 2006-04-27 Seiko Epson Corp 隔壁構造体、隔壁構造体の形成方法、デバイス、電気光学装置及び電子機器
KR100712111B1 (ko) * 2004-12-14 2007-04-27 삼성에스디아이 주식회사 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법
JP4640085B2 (ja) * 2005-09-30 2011-03-02 カシオ計算機株式会社 表示パネル
WO2007139780A2 (en) 2006-05-23 2007-12-06 Cree Led Lighting Solutions, Inc. Lighting device and method of making
JP4245032B2 (ja) 2006-10-03 2009-03-25 セイコーエプソン株式会社 発光装置および電子機器
JP4743093B2 (ja) * 2006-11-20 2011-08-10 セイコーエプソン株式会社 発光装置
JP4797945B2 (ja) * 2006-11-20 2011-10-19 セイコーエプソン株式会社 発光装置
US20090033643A1 (en) * 2007-07-30 2009-02-05 Honeywell International, Inc. Integrated display module
JP5315684B2 (ja) * 2007-12-18 2013-10-16 セイコーエプソン株式会社 電気泳動表示装置
JP2008198626A (ja) * 2008-05-23 2008-08-28 Seiko Epson Corp 有機el装置
JP5359162B2 (ja) * 2008-10-02 2013-12-04 セイコーエプソン株式会社 表示装置および電子機器
JP5309854B2 (ja) * 2008-10-02 2013-10-09 セイコーエプソン株式会社 表示装置および電子機器
JP2009055065A (ja) * 2008-11-25 2009-03-12 Seiko Epson Corp 電気光学装置及び電子機器
CN102714901B (zh) * 2010-07-15 2015-07-01 株式会社日本有机雷特显示器 有机el显示面板、有机el显示装置的制造方法
JP5222927B2 (ja) * 2010-11-19 2013-06-26 株式会社半導体エネルギー研究所 発光装置
TWI445170B (zh) * 2010-12-03 2014-07-11 Au Optronics Corp 有機發光二極體畫素陣列
JP5447457B2 (ja) * 2011-08-22 2014-03-19 セイコーエプソン株式会社 発光装置および電子機器
JP5581373B2 (ja) * 2012-12-19 2014-08-27 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP5548795B2 (ja) * 2013-03-12 2014-07-16 株式会社半導体エネルギー研究所 発光装置
CN104350533B (zh) * 2013-03-18 2017-09-08 松下电器产业株式会社 薄膜半导体基板、发光面板以及薄膜半导体基板的制造方法
JP5712266B2 (ja) * 2013-10-25 2015-05-07 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP5919335B2 (ja) * 2014-07-09 2016-05-18 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
KR101737865B1 (ko) * 2014-07-30 2017-05-22 엘지디스플레이 주식회사 유기발광표시패널
KR102360783B1 (ko) * 2014-09-16 2022-02-10 삼성디스플레이 주식회사 디스플레이 장치
KR102284756B1 (ko) 2014-09-23 2021-08-03 삼성디스플레이 주식회사 디스플레이 장치
KR102490881B1 (ko) * 2014-12-26 2023-01-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102552276B1 (ko) 2015-02-24 2023-07-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5947963B2 (ja) * 2015-07-24 2016-07-06 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
KR102439308B1 (ko) * 2015-10-06 2022-09-02 삼성디스플레이 주식회사 표시장치
JP2016186633A (ja) * 2016-04-25 2016-10-27 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR20170135585A (ko) * 2016-05-31 2017-12-08 엘지디스플레이 주식회사 뱅크 절연막을 포함하는 유기 발광 표시 장치
CN107104203B (zh) * 2017-06-22 2018-09-11 京东方科技集团股份有限公司 一种oled显示面板以及显示器
CN107170904B (zh) * 2017-06-30 2019-10-15 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN207116483U (zh) 2017-09-06 2018-03-16 京东方科技集团股份有限公司 一种阵列基板及显示装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202682A (ja) 1984-03-27 1985-10-14 日本電気株式会社 薄膜電場発光パネル
JPH04212287A (ja) * 1990-05-29 1992-08-03 Toppan Printing Co Ltd 有機薄膜el素子
JP3202219B2 (ja) * 1990-09-18 2001-08-27 株式会社東芝 El表示装置
US5427858A (en) * 1990-11-30 1995-06-27 Idemitsu Kosan Company Limited Organic electroluminescence device with a fluorine polymer layer
US5317432A (en) * 1991-09-04 1994-05-31 Sony Corporation Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel
WO1993011455A1 (fr) * 1991-11-29 1993-06-10 Seiko Epson Corporation Affichage a cristaux liquides et procede pour sa fabrication
JPH05182759A (ja) 1991-12-26 1993-07-23 Pioneer Video Corp 有機el素子
US5429884A (en) * 1992-01-17 1995-07-04 Pioneer Electronic Corporation Organic electroluminescent element
JPH06325869A (ja) * 1993-05-18 1994-11-25 Mitsubishi Kasei Corp 有機電界発光パネル
JP2821347B2 (ja) * 1993-10-12 1998-11-05 日本電気株式会社 電流制御型発光素子アレイ
JPH07282975A (ja) 1994-04-14 1995-10-27 Matsushita Electric Ind Co Ltd 有機el素子及びその製造方法
JP2701738B2 (ja) * 1994-05-17 1998-01-21 日本電気株式会社 有機薄膜el素子
JPH08111285A (ja) 1994-10-07 1996-04-30 Tdk Corp 有機エレクトロルミネセンス素子の製造方法及びその装置
US5550066A (en) 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
US5684365A (en) * 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
US6115014A (en) * 1994-12-26 2000-09-05 Casio Computer Co., Ltd. Liquid crystal display by means of time-division color mixing and voltage driving methods using birefringence
JP3401356B2 (ja) 1995-02-21 2003-04-28 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルとその製造方法
EP0812526B1 (en) * 1995-12-30 2001-08-08 Casio Computer Co., Ltd. Display device for performing display operation in accordance with signal light and driving method therefor
JP3725169B2 (ja) * 1996-05-15 2005-12-07 セイコーエプソン株式会社 塗布膜を有する薄膜デバイスの製造方法
JP3899566B2 (ja) * 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機el表示装置の製造方法
JP3541625B2 (ja) * 1997-07-02 2004-07-14 セイコーエプソン株式会社 表示装置及びアクティブマトリクス基板
JPH1187068A (ja) * 1997-07-15 1999-03-30 Tdk Corp 有機el素子およびその製造方法
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
JP4013293B2 (ja) * 1997-09-01 2007-11-28 セイコーエプソン株式会社 表示装置兼用型イメージセンサ装置及びアクティブマトリクス型表示装置
US6617644B1 (en) * 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2000260886A (ja) * 1999-03-11 2000-09-22 Toshiba Corp 半導体記憶装置及びその製造方法

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US6734839B2 (en) 2004-05-11
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