JP3830238B2 - アクティブマトリクス型装置 - Google Patents

アクティブマトリクス型装置 Download PDF

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Publication number
JP3830238B2
JP3830238B2 JP23492197A JP23492197A JP3830238B2 JP 3830238 B2 JP3830238 B2 JP 3830238B2 JP 23492197 A JP23492197 A JP 23492197A JP 23492197 A JP23492197 A JP 23492197A JP 3830238 B2 JP3830238 B2 JP 3830238B2
Authority
JP
Japan
Prior art keywords
active matrix
film
insulating film
tft
type device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP23492197A
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English (en)
Japanese (ja)
Other versions
JPH1174073A (ja
JPH1174073A5 (enExample
Inventor
一夫 湯田坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16978379&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3830238(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP23492197A priority Critical patent/JP3830238B2/ja
Priority to EP98938971A priority patent/EP0961525B1/en
Priority to US09/297,278 priority patent/US6359606B1/en
Priority to CNB988015846A priority patent/CN1138457C/zh
Priority to KR10-1999-7003673A priority patent/KR100483225B1/ko
Priority to CNB031406548A priority patent/CN1278292C/zh
Priority to DE69824392T priority patent/DE69824392T2/de
Priority to PCT/JP1998/003758 priority patent/WO1999012394A1/ja
Priority to TW087114009A priority patent/TW426841B/zh
Publication of JPH1174073A publication Critical patent/JPH1174073A/ja
Priority to US10/050,925 priority patent/US6734839B2/en
Publication of JPH1174073A5 publication Critical patent/JPH1174073A5/ja
Publication of JP3830238B2 publication Critical patent/JP3830238B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP23492197A 1997-08-29 1997-08-29 アクティブマトリクス型装置 Expired - Lifetime JP3830238B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP23492197A JP3830238B2 (ja) 1997-08-29 1997-08-29 アクティブマトリクス型装置
DE69824392T DE69824392T2 (de) 1997-08-29 1998-08-25 Anzeigevorrichtung mit aktiver matrix
TW087114009A TW426841B (en) 1997-08-29 1998-08-25 Active matrix display
CNB988015846A CN1138457C (zh) 1997-08-29 1998-08-25 有源矩阵型显示装置
KR10-1999-7003673A KR100483225B1 (ko) 1997-08-29 1998-08-25 액티브 매트릭스형 표시 장치
CNB031406548A CN1278292C (zh) 1997-08-29 1998-08-25 有源矩阵型显示装置
EP98938971A EP0961525B1 (en) 1997-08-29 1998-08-25 Active matrix display
PCT/JP1998/003758 WO1999012394A1 (fr) 1997-08-29 1998-08-25 Affichage matriciel actif
US09/297,278 US6359606B1 (en) 1997-08-29 1998-08-25 Active matrix display
US10/050,925 US6734839B2 (en) 1997-08-29 2002-01-22 Active matrix display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23492197A JP3830238B2 (ja) 1997-08-29 1997-08-29 アクティブマトリクス型装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004344035A Division JP2005116535A (ja) 2004-11-29 2004-11-29 アクティブマトリクス型装置、及びエレクトロルミネッセンス装置
JP2005061926A Division JP3904016B2 (ja) 2005-03-07 2005-03-07 アクティブマトリクス型表示装置

Publications (3)

Publication Number Publication Date
JPH1174073A JPH1174073A (ja) 1999-03-16
JPH1174073A5 JPH1174073A5 (enExample) 2005-02-24
JP3830238B2 true JP3830238B2 (ja) 2006-10-04

Family

ID=16978379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23492197A Expired - Lifetime JP3830238B2 (ja) 1997-08-29 1997-08-29 アクティブマトリクス型装置

Country Status (8)

Country Link
US (2) US6359606B1 (enExample)
EP (1) EP0961525B1 (enExample)
JP (1) JP3830238B2 (enExample)
KR (1) KR100483225B1 (enExample)
CN (2) CN1278292C (enExample)
DE (1) DE69824392T2 (enExample)
TW (1) TW426841B (enExample)
WO (1) WO1999012394A1 (enExample)

Families Citing this family (157)

* Cited by examiner, † Cited by third party
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US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
EP1830343A3 (en) 1997-02-17 2009-03-11 Seiko Epson Corporation Structure of a driving circuit for an electroluminescent display
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
KR100627091B1 (ko) * 1997-08-21 2006-09-22 세이코 엡슨 가부시키가이샤 액티브 매트릭스형 표시장치
JP3580092B2 (ja) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
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US6359606B1 (en) 2002-03-19
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