CN1209644A - 基片处理装置,基片支承装置,基片处理方法和基片制造方法 - Google Patents

基片处理装置,基片支承装置,基片处理方法和基片制造方法 Download PDF

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Publication number
CN1209644A
CN1209644A CN98118700A CN98118700A CN1209644A CN 1209644 A CN1209644 A CN 1209644A CN 98118700 A CN98118700 A CN 98118700A CN 98118700 A CN98118700 A CN 98118700A CN 1209644 A CN1209644 A CN 1209644A
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substrate
substrates
described supporting
middle body
contact portion
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CN98118700A
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Chinese (zh)
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泷泽亨
米原隆夫
山方宪二
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN98118700A 1997-08-27 1998-08-26 基片处理装置,基片支承装置,基片处理方法和基片制造方法 Pending CN1209644A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP231132/97 1997-08-27
JP9231132A JPH1174164A (ja) 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法

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CN1209644A true CN1209644A (zh) 1999-03-03

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CN98118700A Pending CN1209644A (zh) 1997-08-27 1998-08-26 基片处理装置,基片支承装置,基片处理方法和基片制造方法

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US (2) US6451670B1 (enExample)
EP (1) EP0899778A3 (enExample)
JP (1) JPH1174164A (enExample)
KR (1) KR100396014B1 (enExample)
CN (1) CN1209644A (enExample)
AU (1) AU732569B2 (enExample)
SG (1) SG65092A1 (enExample)
TW (1) TW480617B (enExample)

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CN102194659A (zh) * 2010-02-03 2011-09-21 志圣工业股份有限公司 晶圆压膜机干膜输送机构
CN101356047B (zh) * 2006-07-06 2011-11-09 Rena有限责任公司 用于分开和输送基片的装置和方法
CN102765601A (zh) * 2012-07-30 2012-11-07 中国人民解放军国防科学技术大学 用于kdp晶体搬运和位置调整的真空吸附装置
CN102969223A (zh) * 2011-08-31 2013-03-13 细美事有限公司 基板处理设备及基板处理方法
CN103959453A (zh) * 2011-11-25 2014-07-30 信越工程株式会社 基板输送装置及基板装配线
CN105374725A (zh) * 2014-08-07 2016-03-02 东京毅力科创株式会社 接合装置、接合系统以及接合方法
CN105957817A (zh) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 一种晶圆键合方法
CN104051317B (zh) * 2013-03-14 2017-08-29 国际商业机器公司 晶片到晶片的熔接结合卡盘
CN108701592A (zh) * 2016-03-22 2018-10-23 Ev 集团 E·索尔纳有限责任公司 用于衬底的接合的装置和方法
TWI647050B (zh) * 2016-02-16 2019-01-11 奧地利商Ev集團E塔那有限公司 結合基材的方法與裝置
CN109791898A (zh) * 2016-09-29 2019-05-21 Ev 集团 E·索尔纳有限责任公司 用于结合两个基板的装置和方法
CN112563184A (zh) * 2021-02-09 2021-03-26 北京中硅泰克精密技术有限公司 承载装置和半导体工艺设备
CN113795907A (zh) * 2019-05-08 2021-12-14 株式会社尼康 基板保持架、基板贴合装置以及基板贴合方法
US11315813B2 (en) 2015-04-10 2022-04-26 Ev Group E. Thallner Gmbh Substrate holder and method for bonding two substrates

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JP5476657B2 (ja) * 2007-04-10 2014-04-23 株式会社ニコン 基板ホルダ、基板接合装置および基板接合方法
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JP6348500B2 (ja) * 2013-09-25 2018-06-27 芝浦メカトロニクス株式会社 吸着ステージ、貼合装置、および貼合基板の製造方法
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KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP6782087B2 (ja) * 2016-03-28 2020-11-11 株式会社日本マイクロニクス シート治具、ステージ、製造装置、及び二次電池の製造方法
KR102537289B1 (ko) * 2016-07-12 2023-05-30 가부시키가이샤 니콘 적층 기판 제조 방법, 적층 기판 제조 장치, 적층 기판 제조 시스템, 및 기판 처리 장치
JP6899891B2 (ja) * 2016-08-12 2021-07-07 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板を制御して接合する方法およびサンプルホルダ
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CN102765601A (zh) * 2012-07-30 2012-11-07 中国人民解放军国防科学技术大学 用于kdp晶体搬运和位置调整的真空吸附装置
CN104051317B (zh) * 2013-03-14 2017-08-29 国际商业机器公司 晶片到晶片的熔接结合卡盘
CN105374725A (zh) * 2014-08-07 2016-03-02 东京毅力科创株式会社 接合装置、接合系统以及接合方法
CN110416142B (zh) * 2014-08-07 2023-08-29 东京毅力科创株式会社 接合装置、接合系统以及接合方法
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US11315813B2 (en) 2015-04-10 2022-04-26 Ev Group E. Thallner Gmbh Substrate holder and method for bonding two substrates
TWI647050B (zh) * 2016-02-16 2019-01-11 奧地利商Ev集團E塔那有限公司 結合基材的方法與裝置
TWI702107B (zh) * 2016-02-16 2020-08-21 奧地利商Ev集團E塔那有限公司 結合基材的方法與裝置
US10755930B2 (en) 2016-02-16 2020-08-25 Ev Group E. Thallner Gmbh Method and device for bonding of substrates
US10755929B2 (en) 2016-02-16 2020-08-25 Ev Group E. Thallner Gmbh Method and device for bonding of substrates
US11101132B2 (en) 2016-02-16 2021-08-24 Ev Group E. Thallner Gmbh Method and device for bonding of substrates
US11742205B2 (en) 2016-02-16 2023-08-29 Ev Group E. Thallner Gmbh Method and device for bonding of substrates
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CN108701592B (zh) * 2016-03-22 2024-04-05 Ev集团E·索尔纳有限责任公司 用于衬底的接合的装置和方法
CN105957817A (zh) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 一种晶圆键合方法
CN109791898B (zh) * 2016-09-29 2023-02-03 Ev 集团 E·索尔纳有限责任公司 用于结合两个基板的装置和方法
CN109791898A (zh) * 2016-09-29 2019-05-21 Ev 集团 E·索尔纳有限责任公司 用于结合两个基板的装置和方法
CN113795907A (zh) * 2019-05-08 2021-12-14 株式会社尼康 基板保持架、基板贴合装置以及基板贴合方法
CN113795907B (zh) * 2019-05-08 2024-06-04 株式会社尼康 基板贴合装置以及基板贴合方法
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US6706618B2 (en) 2004-03-16
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US20020034859A1 (en) 2002-03-21
AU8190298A (en) 1999-03-11
AU732569B2 (en) 2001-04-26
TW480617B (en) 2002-03-21
US6451670B1 (en) 2002-09-17
EP0899778A2 (en) 1999-03-03
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KR19990023901A (ko) 1999-03-25
US20020182038A1 (en) 2002-12-05

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