JPS644013A - Formation of substrate - Google Patents

Formation of substrate

Info

Publication number
JPS644013A
JPS644013A JP15890587A JP15890587A JPS644013A JP S644013 A JPS644013 A JP S644013A JP 15890587 A JP15890587 A JP 15890587A JP 15890587 A JP15890587 A JP 15890587A JP S644013 A JPS644013 A JP S644013A
Authority
JP
Japan
Prior art keywords
bonded
faces
wafers
curved
right angles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15890587A
Other languages
Japanese (ja)
Inventor
Nobuyuki Izawa
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP15890587A priority Critical patent/JPS644013A/en
Publication of JPS644013A publication Critical patent/JPS644013A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Abstract

PURPOSE:To eliminate a part not bonded when substrates are to be bonded by a method wherein faces to be bonded of the substrates are curved in such a way that convex faces are faced at right angles or at a prescribed angle to each other, the faced convex faces are brought into contact with each other and, after that, both faces are bonded while the curved faces are respectively restored to a plane. CONSTITUTION:Two disk-shaped wafers 1 and 2 to be bonded are prepared; a force is exerted on these wafers 1, 2; the wafers are deformed and curved to be U-shaped in such a way that faces to be bonded become mutually convex faces 1a, 2a and that the mutually convex faces 1a, 2a are faced at right angles or at nearly right angles to each other. Then, the convex faces 1a, 2a of the wafers 1, 2 which have been curved to be U-shaped are initially brought into contact with each other near the center A in such a way that they are faced at right angles or at nearly right angles to each other. In succession, a curved state is released, and the wafers 1, 2 are respectively restored to a plane state and are superposed; they are heated and are bonded. A contact part is extended radially from the center A or from a point-like contact position near the center; a surrounding gas such as the air or the like is expelled; accordingly, the two wafers 1, 2 are bonded closely to each other.
JP15890587A 1987-06-26 1987-06-26 Formation of substrate Pending JPS644013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15890587A JPS644013A (en) 1987-06-26 1987-06-26 Formation of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15890587A JPS644013A (en) 1987-06-26 1987-06-26 Formation of substrate

Publications (1)

Publication Number Publication Date
JPS644013A true JPS644013A (en) 1989-01-09

Family

ID=15681919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15890587A Pending JPS644013A (en) 1987-06-26 1987-06-26 Formation of substrate

Country Status (1)

Country Link
JP (1) JPS644013A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042560A (en) * 1990-04-17 1992-01-07 Komatsu Ltd Wheeled vehicle slip preventing device and method thereof
US5300175A (en) * 1993-01-04 1994-04-05 Motorola, Inc. Method for mounting a wafer to a submount
US5827343A (en) * 1994-10-13 1998-10-27 Engelke; Heinrich Process for changing the bend of anodically bonded flat composite bodies made of glass and metal or semiconductor materials
EP0899778A2 (en) * 1997-08-27 1999-03-03 Canon Kabushiki Kaisha Apparatus and method for pressing two substrates together
FR2848336A1 (en) * 2002-12-09 2004-06-11 Commissariat Energie Atomique Method for making a constrained structure designed to be dissociated at the level of separation zone in order to minimize the jump of constraints at dissociation
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
US7229899B2 (en) 1997-12-30 2007-06-12 Commissariat A L'energie Atomique Process for the transfer of a thin film
US7439092B2 (en) 2005-05-20 2008-10-21 Commissariat A L'energie Atomique Thin film splitting method
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
JP2015515111A (en) * 2011-12-29 2015-05-21 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ Method for manufacturing a multilayer structure on a substrate

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042560A (en) * 1990-04-17 1992-01-07 Komatsu Ltd Wheeled vehicle slip preventing device and method thereof
US5300175A (en) * 1993-01-04 1994-04-05 Motorola, Inc. Method for mounting a wafer to a submount
US5827343A (en) * 1994-10-13 1998-10-27 Engelke; Heinrich Process for changing the bend of anodically bonded flat composite bodies made of glass and metal or semiconductor materials
US6706618B2 (en) 1997-08-27 2004-03-16 Canon Kabushiki Kaisha Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method
EP0899778A3 (en) * 1997-08-27 2001-03-21 Canon Kabushiki Kaisha Apparatus and method for pressing two substrates together
US6451670B1 (en) 1997-08-27 2002-09-17 Canon Kabushiki Kaisha Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method
EP0899778A2 (en) * 1997-08-27 1999-03-03 Canon Kabushiki Kaisha Apparatus and method for pressing two substrates together
US7229899B2 (en) 1997-12-30 2007-06-12 Commissariat A L'energie Atomique Process for the transfer of a thin film
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336A1 (en) * 2002-12-09 2004-06-11 Commissariat Energie Atomique Method for making a constrained structure designed to be dissociated at the level of separation zone in order to minimize the jump of constraints at dissociation
WO2004064146A1 (en) * 2002-12-09 2004-07-29 Commissariat A L'energie Atomique Method for making a stressed structure designed to be dissociated
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
US7439092B2 (en) 2005-05-20 2008-10-21 Commissariat A L'energie Atomique Thin film splitting method
JP2015515111A (en) * 2011-12-29 2015-05-21 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ Method for manufacturing a multilayer structure on a substrate

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