CN1947226A - 吸附装置 - Google Patents
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Abstract
晶片(W)从背面侧经由切割带(T)被支承在环构架(R)上,同时,在表面侧粘贴有保护带(H)。吸附装置(12)具有将吸附面(15)设在上面的台(16)。吸附面(15)通过进行规定的吸附而吸附切割带(T)地保持晶片(W)。在沿吸附面(15)的外周的至少部分区域中形成槽(24),通过用吸附面(15)进行吸气,槽(24)内变成负压,使切割带(T)陷落。
Description
技术领域
本发明涉及一种对在一个面上粘贴有粘接片的板状部件进行保持的吸附装置,更详细地,涉及可以容易且迅速地剥离粘贴在板状部件另一面上的保护带的吸附装置。
背景技术
以前,大家都知道表面侧做成电路面的大致为圆盘状的半导体晶片(以下只称为“晶片”)。这种晶片一般在所述电路面上粘贴保护带后,通过用研磨机等对背面侧进行切削加工来调整厚度。之后,在将晶片的背面侧粘合在于露出环构架内侧的切割带的粘接面侧的状态下,从晶片的表面侧剥下保护带,之后,通过将该晶片切断成小方块状而形成半导体芯片。
作为这样从晶片上剥离保护带的装置,大家都知道图12所示类型的产品。该装置包括:通过把上面侧作为吸附面50来吸附切割带T而保持晶片W的吸附装置51、和剥离保持在该吸附装置51上的晶片W的保护带H的剥离单元53。剥离单元53包括卷挂图示省略的供给卷轴及缠绕卷轴之间输出的带状的剥离用带P的辊54,经由该辊54把剥离用带P粘贴在保护带H的外周缘上后,通过一边卷绕剥离用带P一边沿保护带H的径向使辊54转动,从晶片W剥离保护带H。
作为这种装置的问题,如图12所示,在将剥离用带P粘贴在保护带H的外周缘上时,辊54弹性变形,剥离用带P及切割带T粘接,在该状态下只要开始剥离保护带H,晶片W就会被损伤。
在此,作为消除上述问题的产品,例如专利文献1所展示类型的产品为众所周知。在该文献中,在所述吸附装置的附近位置设有能隐蔽切割带的粘接面侧(上面侧)的遮蔽板。在经由所述辊把剥离用带粘贴在保护带外周缘上时,该遮蔽板防止剥离用带粘接于切割带,另一方面,在剥离保护带的前后,该遮蔽板可转动地设置在从吸附装置上方退避的位置上。
专利文献1:日本特开2001-319906号公报
发明要解决的课题
然而,在专利文献1的结构中,用于移动遮蔽板的构造的部件数量增加,产生导致装置复杂化的不便。而且,由于每次更换吸附面上的晶片都必须移动遮蔽板来隐蔽切割带,或使遮蔽板退避到吸附装置外侧,所以,导致了保护带的剥离处理所需要的时间变长的不便。
通过使用相对环构架使晶片上升的升降装置,使切割带保持倾斜姿势、防止剥离用带与保护带粘接的结构也为众所周知,但即使这样,也有由于升降装置的复杂化或晶片的上升工序导致剥离处理时间长的不便。
发明内容
本发明是着眼于这样的不便而提出的,其目的在于提供一种吸附装置,其可以实现装置的简单化,且在剥离粘贴在板状部件上的保护带时可以迅速且平稳地进行该剥离。
解决课题的方法
为了达到上述目的,本发明的吸附装置采用如下构成:通过吸附被粘贴在板状部件的一个面上且具有从该板状部件的外周露出的平面形状的粘接片,从而保持板状部件,其中,包括具有通过进行规定的吸气来吸附所述粘接片的吸附面的台,在沿所述板状部件的外周的至少部分区域形成槽。
在本发明中,优选采用如下构成:所述台包括具有位于与吸附面大致同一面上的区域的台本体、和设在该台本体区域内而形成所述吸附面的吸附部件,所述吸附面具有对应于板状部件的平面形状的平面形状,在沿着吸附面外周的台本体上形成所述槽。
另外,也可优选采用如下构成:所述槽沿从吸附面的面内中央部连接外周的方向隔开规定间隔地形成多个。
另外,还可采用如下构成:在所述板状部件的另一个面上,粘贴有能够经由带状的剥离用带进行剥离的保护带,所述槽的延伸长度设定得比剥离用带的短边宽度大。
进而,本发明的吸附装置还可采用如下构成:用于剥离被粘贴在经由切割带支承于环构架的晶片的上面上的保护带的装置,其中,该吸附装置包括具有通过进行规定的吸气来吸附所述切割带而保持晶片的吸附面的台,在沿所述晶片的外周的至少部分区域中形成槽。
发明效果
根据本发明,当从应用于吸附粘接片的吸附面进行吸气时,从在该吸附面外侧的粘接片和槽之间向吸附面吸气。通过该吸气使槽的内部空间的压力下降,重叠于槽的粘接片进入到该槽内地陷落。因而,例如当在板状部件的另一个面上粘贴保护带、利用弹性变形的辊使剥离该保护带的剥离用带粘贴在保护带的外侧缘上时,通过所述粘接片的陷落而使该粘接片从剥离用带分离,可以防止它们意外地发生粘接。因此,无需现有技术那样移动遮蔽板或板状部件的结构,通过削减部件数量可以达到装置的简化,另外,可以没有使剥离用带不与粘接带粘接地移动遮蔽板的工序,可以缩短进行剥离所需的处理时间。
而且,由于吸附面具有与板状部件的平面形状对应的平面形状,槽沿着该吸附面的外周定位,所以,可以使吸附面和槽接近,通过所述吸气使槽内的压力高效率地下降,可以更切实地防止所述的粘接片与剥离用带粘接。
进而,由于沿着从吸附面的面内中央部连接外周的方向形成多个槽,所以,即使在保持各种平面尺寸的板状部件时,也可以使槽与其对应地定位在沿着板状部件的外周的位置,可以提高吸附装置的通用性。
另外,由于使槽的延伸长度作得比剥离用带的短边宽度大,故可以在剥离用带的整个短边宽度范围内使粘接片陷落,可以进一步切实地避免这些粘接,平稳地进行保护带的剥离。
附图说明
图1是使用第一实施方式的吸附装置的剥离装置的示意结构图;
图2是构成吸附装置的台及吸附在其上的晶片等的示意立体图;
图3是图2的A-A线剖面图;
图4是台的平面图;
图5是图4的B-B线剖面图;
图6是剖视部分图1的主要部分的放大图;
图7表示从晶片剥离保护带的初始状态的与图6一样的放大图;
图8表示从晶片剥离保护带的中间状态的与图6一样的放大图;
图9是放大部分图7的示意图;
图10是构成第二实施方式的吸附装置的台及吸附在其上的晶片等的与图2一样的立体图;
图11是第二实施方式的剥离装置的与图7一样的放大图;
图12是现有例的与图9一样的说明图。
附图标记说明
12 吸附装置
15 吸附面
16 台
19 台本体
20 吸附部件
24 槽
44 槽
H 保护带
P 剥离用带
R 环构架
T 切割带(粘接带)
W 晶片(板状部件)
具体实施方式
下面,参照附图对本发明的实施方式进行说明。
[第一实施方式]
在图1中表示使用了第一实施方式的吸附装置的剥离装置的示意结构图。在该图中,剥离装置10包括能够经由沿图1中的左右方向延伸的滑块11移动地支承着的吸附装置12、和设在该吸附装置12上方的剥离装置13。
作为保持在所述吸附装置12上的板状部件的晶片W,如图2及图3所示,形成大致圆盘状,同时,经由作为粘接片的切割带T支承在环构架R上。具体地,切割带T在其上面具有粘接面T1,经由该粘接面T1粘贴在晶片W的背面(下面)。切割带T具有形成比晶片W还大的平面面积、从晶片W的外周露出的平面形状,外周侧粘贴在环构架R的(下面)。在晶片W的外周和环构架R的内周之间存在大致成圆环状的间隙S,切割带T的粘接面T1从该间隙S露出。另一方面,保护带H粘贴在晶片W的表面(上面)上,该保护带H在前一工序中沿着晶片W的外周被切断,形成与该晶片W大致同一形状。
所述吸附装置12如图1所示,包括:在上面具有吸附所述切割带T的吸附面15的台16、和从下侧支承该台16且安装在所述滑块11上可沿左右方向移动的支承体17。
所述台16如图2、图4及图5所示那样,平面看形成大致圆形,而且具有:在上部具有凹部19A的有底容器状的台本体19、设在该台本体19的区域内即所述凹部19A内侧的由多孔质材料形成的吸附部件20、和与台本体19的下面侧连接的软管21。吸附部件20形成与晶片W对应的平面形状即与晶片W大致相同的平面形状,其上面作为所述吸附面15而形成。
所述台本体19在上面具有位于与吸附部件20的上面大致同一面上的区域,该区域做成从下侧支承从晶片W的外周露出的切割带T及环构架R的支承23。在该支承面23上,设有在吸附面15的图4中右端隔着若干间隙而相邻的槽24。该槽24平面看形成沿着吸附面15的外周即晶片W的外周延伸的圆弧状,其延伸方向的中间部设定成,位于在保护带H剥离时的吸附装置12的移动方向上最靠前的位置即图4中最靠右的位置。槽24的延伸长度形成得比后述的剥离用带P的短边宽度大(参照图4),另一方面,槽24的宽度w1(参照图2)设定为比沿所述间隙S的晶片W的径向的宽度w2小。另外,槽24如图5及图6所示,由沿着吸附面15的径向的剖面看形成大致凹状。
在台本体19的凹部19A的底部设有多个通气槽25,这些通气槽25设置成与所述软管21连通。从而,通过使与软管21连接的减压泵(图示省略)动作,可以经由各通气槽25由吸附部件20的吸附面15大致整个区域吸引空气,发挥吸引力。
所述剥离装置13如图1所示,设置成可利用将相对保护带H的面作为粘接面的剥离用带P从晶片W剥离保护带H。该剥离装置13包括:设在吸附装置12上方且在正面看横向形成大致L状的支承板27;设在该支承板27和吸附装置12之间供给剥离用带P的供给卷轴28;被支承在支承板27图1中的右侧并且将从供给卷轴28输出的剥离用带P压向保护带H的压紧装置29;支承在支承板27图1中的上部左侧并且卷绕通过了压紧装置29的剥离用带P的卷绕卷轴30。
从所述供给卷轴28输出的剥离用带P经由配置在该供给卷轴28下侧的导辊32而挂绕在压紧装置29。压紧装置29包括:向着上下方向的缸33;与该缸33的杆33A连结并沿上下方向移动的保持部件34;可转动地支承在该保持部件34的下侧、并挂绕从所述导辊32延伸的剥离用带P的压辊35。在保持部件34上,在压辊35的上侧设有两个辊36、36,经由这些辊36、36挂绕在压辊35上的剥离用带P被导向上方。
挂绕在所述压紧装置29上的剥离用带P支承在支承板27上,经由通过位于该支承板27背面侧的电机40驱动的驱动辊38和用缸42夹入的夹送辊41之间,卷绕在卷绕卷轴30上。该卷绕卷轴30设置成可经由位于支承板27背面侧的电机39转动。另外,由电机40赋予剥离用带P从供给卷轴28向卷绕卷轴30的输出力,控制由此输出的剥离用带P,以便通过电机39进行卷绕。
下面,对用所述剥离装置10剥离保护带H的顺序进行说明。
首先,经由没有图示的安装装置将晶片W的外周与吸附面15的外周大致一致那样的图2所示状态的晶片W配置在台16上。其次,使减压泵(图示省略)动作,由吸附面15进行吸气,吸附该吸附面15上的切割带T,保持晶片W。此时,通过支承面23和切割带T之间将空气吸引到吸附面15,同时,也吸引沿着吸附面15的槽24内的空气。该槽24由于通过切割带T被从上方堵塞且吸引内部的空气,故槽24的内部形成负压,如图5、图6及图9所示,切割带T陷入槽24内地陷落,在进行吸气期间会维持该陷落状态。
这样,在使切割带T吸附在吸附装置12的吸附面15上后,沿着滑块11使吸附装置12移动。之后,如图6所示,在与槽24邻接的晶片W外缘部(图6中右端部)到达压紧装置29中的压辊35的大致正下方时,停止吸附装置12的移动。其后,如图7所示,经由缸33的杆33A使压辊35向下方移动,使挂绕在该压辊35上的剥离用带P与粘贴在晶片W上的保护带H抵接。因此,由于剥离用带P的粘接面粘接在保护带H的外缘部(图6中右端部),重叠于槽24的切割带T陷落,以从剥离用带P退避,所以,即使是由于弹性发生变形的压辊35也能防止剥离用带P和切割带T不经意地发生粘接(参照图9)。
其次,经由滑块11使吸附装置12向图7中的右方向移动,同时,使驱动辊38转动,沿图7中的箭头方向输出剥离用带P。此时,控制吸附装置12的移动速度和剥离用带P的输出速度成大致相同。因此,如图8所示,压辊35边在保护带H上转动边沿保护带H的径向粘接剥离用带P,同时,经由压辊35保护带H在与剥离用带P粘接的状态下被卷绕,保护带H就会从晶片W上被剥离。
从而,根据该第一实施方式,通过在台本体16上设置槽24的极简单的结构,只要用吸附面15进行一般的吸气,就可使切割带T陷落,避免与剥离用带P的粘接,能平稳地进行保护带H的剥离。
[第二实施方式]
下面,对本发明第二实施方式进行说明。在下面的说明中,对与所述第一实施方式相同或相等的结构部分根据需要而使用相同附图标记,省略说明或简要地说明。
图10及图11表示本发明的吸附装置的第二实施方式。该第二实施方式具有以下特征,即,还在第一实施方式中的吸附面15面内形成多个槽44。
在第二实施方式中的吸附部件20上,设有位于与吸附面15的外周大致同心的圆上的三个隔壁部45,吸附部件20被这些隔壁部45分隔成呈平面看为环形的三个圆环体46和位于最内侧的隔壁部45内方的圆盘体47。各隔壁部45的平面形状设定成与径向尺寸不同的各种晶片W的平面形状大致相同。在此,在各圆环体46上,沿隔壁部45的外周形成所述槽44,这些槽44及所述的槽24沿着从吸附面15的面内中央部连接外周的方向即吸附面15的径向隔开规定间隔地定位。在各圆环体46上形成的槽44的延伸长度及宽度设定为与所述槽24大致相同的尺寸。
如图11所示,在与晶片W重叠定位的槽44的内部,配置有形成与吸附面15呈大致同一平面的填充材料F。该填充材料F相对于槽44拆装自由地设置着,同时,在吸附面15上保持有晶片W时,通过槽44的形成缘就能防止晶片W的图11中下面受伤。
如图11所示,在台本体19中的各圆环体46和圆盘体47的下侧,分别设有与软管48连接的吸气孔49。各软管48经由没有图示的电磁阀分别与减压泵连接,通过开闭该电磁阀,各圆环体46和每个圆盘体47就能独立进行吸气的调整。此时,在相邻的各圆环体46及圆盘体47之间用隔壁部45可以遮断气流。
在以上结构中,例如,如图10所示,在吸附与最外侧的隔壁部45的平面形状大致相同的晶片W时,首先,把填充材料F放在与晶片W重叠的位置的槽44的内部(参照图11)。而后,经由所述电磁阀(图示省略)只让最外侧的圆环体46停止吸气,控制从除此以外的圆环体46及圆盘体47进行吸气。
在该状态下,将晶片W的外周与最外侧的隔壁部45大致一致的图10所示的状态的晶片W配置在台16上。由此,通过进行吸气的圆环体46及圆盘体47吸附切割带T,保持晶片W。此时,与第一实施方式的槽24一样,吸引在最外侧的圆环体46上形成并沿晶片W的外周的槽44内的空气,切割带T就会进入该槽44内地陷落。
晶片W的平面形状也可以改变,例如,也可以与第一实施方式一样,做成与吸附部件20的外周大致相同的尺寸,或做成与最内侧的隔壁部45或位于中间的隔壁部45大致相同的尺寸。此时,在与晶片W重叠的位置设有槽44的场合,只要在其内部放置填充材料F并且控制使不与晶片W重叠的圆环体46的吸气停止即可。因此,对应各种晶片W的平面形状,都能使切割带T陷落在沿该晶片W的外周的槽44内。
从而,根据该第二实施方式,即使在改变晶片W的平面形状时,沿晶片W的外周定位任一个槽24、44,都能使切割带T陷落。因此,可以收到与第一实施方式同样的效果,此外,能够提高相对晶片W平面形状的通用性。
在上述记述中公布了用于实施本发明的最佳结构、方法等,但本发明不限于此。
即,本发明主要对特定的实施方式特别进行图示及说明,但只要没有脱离本发明的技术思想及目的的范围,本领域的技术人员可以对以上所述的实施方式在形状、数量、材质及其它详细结构方面施加各种变化。
例如,所述吸附部件20可以进行各种设计变化,例如可以做成在吸附面15的面内设置多个进行吸气的孔的结构。
另外,所述槽24的形成位置不限于图示结构例,例如也可以在平面视图中沿着吸附面15外周的大致整个区域上形成环状,或沿吸附面15的径向的剥离用带P的粘贴开始部分和粘贴结束部分的两侧分别形成等,在台本体16的支承面23的多处形成。
进而,对将所述切割带T粘贴在环构架R上的场合进行了说明,但在限于切割带T具有从晶片W的外周露出的平面形状时,也可以省略环构架R。
另外,在所述第一实施方式中,在吸附部件20和槽24之间存在若干间隙,但也可以不设该间隙地形成槽24。
进而,在所述第二实施方式中也可以根据需要适当增减槽44、隔壁部45及圆环体46的形成数量。
另外,说明了使吸附装置12移动进行保护带H的剥离的情况,也可以由使挂绕剥离用带P的压辊35在保护带H上移动的结构来代替。总之,只要设置成随着剥离用带P的输出使吸附装置12和压辊35能相对移动即可。
工业实用性
本发明主要用于利用剥离用带剥离被粘贴在晶片等板状部件上的保护带的装置。
Claims (5)
1.一种吸附装置,其通过对被粘贴在板状部件的一个面上且具有从该板状部件的外周露出的平面形状的粘接片进行吸附来保持板状部件,其特征在于,
包括具有吸附面的台,该吸附面通过进行规定的吸气而吸附所述粘接片,
在沿所述板状部件的外周的至少部分区域上形成有槽。
2.如权利要求1所述的吸附装置,其特征在于,所述台具备台本体和吸附部件,该台本体具有位于与吸附面大致同一面上的区域,该吸附部件设在该台本体的区域内并形成所述吸附面,
所述吸附面具有与板状部件的平面形状对应的平面形状,在沿着吸附面外周的台本体上形成所述槽。
3.如权利要求1所述的吸附装置,其特征在于,所述槽沿着从吸附面的面内中央部连接外周的方向隔开规定间隔地形成有多个。
4.如权利要求1、2或3所述的吸附装置,其特征在于,在所述板状部件的另一个面上,粘贴有能够经由带状的剥离用带剥离的保护带,
所述槽的延伸长度设定得比剥离用带的短边宽度大。
5.一种吸附装置,被使用于对保护带进行剥离的装置,该保持带被粘贴在经由切割带支承于环构架的晶片的上面,其特征在于,
包括具有吸附面的台,该吸附面通过进行规定的吸气来吸附所述切割带而对晶片进行保持,
在沿所述晶片的外周的至少部分区域上形成有槽。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102870204A (zh) * | 2010-06-07 | 2013-01-09 | 日本电气硝子株式会社 | 板状构件的移送装置及吸附垫 |
CN103545461A (zh) * | 2012-07-09 | 2014-01-29 | 三星显示有限公司 | 剥离装置和包括剥离装置的直入式热成像系统 |
WO2014201731A1 (zh) * | 2013-06-19 | 2014-12-24 | 深圳市华星光电技术有限公司 | 离型纸剥离装置 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006100728A (ja) * | 2004-09-30 | 2006-04-13 | Nitto Denko Corp | 保護テープ剥離方法およびこれを用いた装置 |
JP4953764B2 (ja) * | 2005-11-29 | 2012-06-13 | 株式会社東京精密 | 剥離テープ貼付方法および剥離テープ貼付装置 |
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DE102007033242A1 (de) * | 2007-07-12 | 2009-01-15 | Jenoptik Automatisierungstechnik Gmbh | Verfahren und Vorrichtung zum Trennen einer Planplatte aus sprödbrüchigem Material in mehrere Einzelplatten mittels Laser |
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WO2009022495A1 (ja) * | 2007-08-14 | 2009-02-19 | Tokyo Seimitsu Co., Ltd. | ウェーハ用テーブル、表面保護フィルム剥離装置および表面保護フィルム剥離方法 |
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JP2010067782A (ja) * | 2008-09-10 | 2010-03-25 | Tokyo Seimitsu Co Ltd | 表面保護フィルム剥離装置 |
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US20140238617A1 (en) * | 2013-02-28 | 2014-08-28 | General Electric Company | System and method for removal of a layer |
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JP6104075B2 (ja) * | 2013-06-28 | 2017-03-29 | 日本特殊陶業株式会社 | 真空吸着装置およびその製造方法 |
JP6340249B2 (ja) * | 2014-05-28 | 2018-06-06 | 株式会社荏原製作所 | テープ貼り付け装置およびテープ貼り付け方法 |
JP2016147342A (ja) * | 2015-02-12 | 2016-08-18 | 株式会社ディスコ | 加工装置のチャックテーブル |
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JP2017224671A (ja) * | 2016-06-14 | 2017-12-21 | 株式会社ディスコ | 剥離装置 |
KR20210116770A (ko) * | 2020-03-13 | 2021-09-28 | 삼성전자주식회사 | 펠리클 전사 장치 및 펠리클 전사 방법 |
US11505457B2 (en) * | 2021-04-16 | 2022-11-22 | Xintec Inc. | Semiconductor removing apparatus and operation method thereof |
JP2023064613A (ja) * | 2021-10-26 | 2023-05-11 | 株式会社ディスコ | 剥離治具、剥離治具を用いたシート剥離方法及びシート剥離装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930631A (ja) * | 1982-08-13 | 1984-02-18 | Hitachi Ltd | 吸着保持装置 |
US5180000A (en) * | 1989-05-08 | 1993-01-19 | Balzers Aktiengesellschaft | Workpiece carrier with suction slot for a disk-shaped workpiece |
EP0848415A1 (en) * | 1995-08-31 | 1998-06-17 | Nitto Denko Corporation | Method and apparatus for peeling protective adhesive tape from semiconductor wafer |
JP2001319906A (ja) | 2000-05-11 | 2001-11-16 | Takatori Corp | ウエハ表面保護テープの剥離装置 |
JP4739584B2 (ja) * | 2001-07-05 | 2011-08-03 | リンテック株式会社 | 剥離装置 |
JP4026680B2 (ja) * | 2001-12-07 | 2007-12-26 | 株式会社ディスコ | 板状物支持部材及びその使用方法 |
JP2003209082A (ja) * | 2002-01-15 | 2003-07-25 | Nitto Denko Corp | 保護テープの貼付方法およびその装置並びに保護テープの剥離方法 |
JP3983053B2 (ja) * | 2002-01-17 | 2007-09-26 | 日東電工株式会社 | 保護テープの切断方法およびそれを用いた保護テープ貼付装置 |
JP2004128115A (ja) * | 2002-10-01 | 2004-04-22 | Hitachi Chem Co Ltd | 減圧固定用フィルム、ウエハ保護フィルム、ダイシングフィルム及び半導体装置の製造方法 |
JP2005175384A (ja) * | 2003-12-15 | 2005-06-30 | Nitto Denko Corp | 保護テープの貼付方法及び剥離方法 |
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- 2005-04-20 CN CNB2005800127251A patent/CN100437928C/zh not_active Expired - Fee Related
- 2005-04-20 KR KR1020067021007A patent/KR20070004027A/ko not_active Application Discontinuation
- 2005-04-20 EP EP05734627A patent/EP1742254A1/en not_active Withdrawn
- 2005-04-20 WO PCT/JP2005/007500 patent/WO2005104201A1/ja not_active Application Discontinuation
- 2005-04-21 TW TW094112783A patent/TW200603332A/zh unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102870204A (zh) * | 2010-06-07 | 2013-01-09 | 日本电气硝子株式会社 | 板状构件的移送装置及吸附垫 |
CN102870204B (zh) * | 2010-06-07 | 2016-02-03 | 日本电气硝子株式会社 | 板状构件的移送装置及吸附垫 |
CN103545461A (zh) * | 2012-07-09 | 2014-01-29 | 三星显示有限公司 | 剥离装置和包括剥离装置的直入式热成像系统 |
CN103545461B (zh) * | 2012-07-09 | 2017-04-12 | 三星显示有限公司 | 剥离装置和包括剥离装置的热成像系统 |
WO2014201731A1 (zh) * | 2013-06-19 | 2014-12-24 | 深圳市华星光电技术有限公司 | 离型纸剥离装置 |
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KR20070004027A (ko) | 2007-01-05 |
TWI355709B (zh) | 2012-01-01 |
TW200603332A (en) | 2006-01-16 |
US7798195B2 (en) | 2010-09-21 |
EP1742254A8 (en) | 2007-02-21 |
CN100437928C (zh) | 2008-11-26 |
US20070169895A1 (en) | 2007-07-26 |
JP2005311176A (ja) | 2005-11-04 |
EP1742254A1 (en) | 2007-01-10 |
JP4297829B2 (ja) | 2009-07-15 |
WO2005104201A1 (ja) | 2005-11-03 |
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