SG65092A1 - Substrate processing apparatus substrate support apparatus substrate processing method and substrate fabrication method - Google Patents
Substrate processing apparatus substrate support apparatus substrate processing method and substrate fabrication methodInfo
- Publication number
- SG65092A1 SG65092A1 SG1998003112A SG1998003112A SG65092A1 SG 65092 A1 SG65092 A1 SG 65092A1 SG 1998003112 A SG1998003112 A SG 1998003112A SG 1998003112 A SG1998003112 A SG 1998003112A SG 65092 A1 SG65092 A1 SG 65092A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- substrate processing
- support apparatus
- fabrication method
- processing apparatus
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9231132A JPH1174164A (ja) | 1997-08-27 | 1997-08-27 | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG65092A1 true SG65092A1 (en) | 1999-05-25 |
Family
ID=16918791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1998003112A SG65092A1 (en) | 1997-08-27 | 1998-08-17 | Substrate processing apparatus substrate support apparatus substrate processing method and substrate fabrication method |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6451670B1 (enExample) |
| EP (1) | EP0899778A3 (enExample) |
| JP (1) | JPH1174164A (enExample) |
| KR (1) | KR100396014B1 (enExample) |
| CN (1) | CN1209644A (enExample) |
| AU (1) | AU732569B2 (enExample) |
| SG (1) | SG65092A1 (enExample) |
| TW (1) | TW480617B (enExample) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3720515B2 (ja) * | 1997-03-13 | 2005-11-30 | キヤノン株式会社 | 基板処理装置及びその方法並びに基板の製造方法 |
| SG71182A1 (en) | 1997-12-26 | 2000-03-21 | Canon Kk | Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method |
| US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
| DE60125952T2 (de) * | 2000-08-16 | 2007-08-02 | Massachusetts Institute Of Technology, Cambridge | Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen |
| JP3742000B2 (ja) * | 2000-11-30 | 2006-02-01 | 富士通株式会社 | プレス装置 |
| US6940089B2 (en) | 2001-04-04 | 2005-09-06 | Massachusetts Institute Of Technology | Semiconductor device structure |
| JP2002351082A (ja) * | 2001-05-24 | 2002-12-04 | Adtec Engineeng Co Ltd | 露光装置用基板ステージ |
| JP4201564B2 (ja) * | 2001-12-03 | 2008-12-24 | 日東電工株式会社 | 半導体ウエハ搬送方法およびこれを用いた半導体ウエハ搬送装置 |
| JP2003174077A (ja) * | 2001-12-04 | 2003-06-20 | Lintec Corp | 吸着保持装置 |
| AU2003222003A1 (en) * | 2002-03-14 | 2003-09-29 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| US7307273B2 (en) * | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
| US7335545B2 (en) * | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
| US6995430B2 (en) * | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US20030227057A1 (en) * | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
| FR2851846A1 (fr) * | 2003-02-28 | 2004-09-03 | Canon Kk | Systeme de liaison et procede de fabrication d'un substrat semi-conducteur |
| JP4307130B2 (ja) * | 2003-04-08 | 2009-08-05 | キヤノン株式会社 | 露光装置 |
| US20050150597A1 (en) * | 2004-01-09 | 2005-07-14 | Silicon Genesis Corporation | Apparatus and method for controlled cleaving |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| US20060113603A1 (en) * | 2004-12-01 | 2006-06-01 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator structures and related methods |
| JP5061515B2 (ja) * | 2006-06-29 | 2012-10-31 | 株式会社ニコン | ウェハ接合装置及びウェハ接合方法 |
| WO2008001626A1 (fr) * | 2006-06-29 | 2008-01-03 | Nikon Corporation | appareil de métallisation de galette |
| WO2008003502A1 (de) * | 2006-07-06 | 2008-01-10 | Rena Sondermaschinen Gmbh | Vorrichtung und verfahren zum vereinzeln und transportieren von substraten |
| JP4711904B2 (ja) * | 2006-07-31 | 2011-06-29 | 日東電工株式会社 | 半導体ウエハへの粘着テープ貼付け方法および半導体ウエハからの保護テープ剥離方法 |
| DE102006042026B4 (de) | 2006-09-07 | 2016-08-04 | Infineon Technologies Ag | Vorrichtung zum Halten eines Substrats und Verfahren zur Behandlung eines Substrats |
| KR100824305B1 (ko) * | 2006-12-22 | 2008-04-22 | 세메스 주식회사 | 지지 핀, 기판 지지 유닛 및 이를 포함하는 기판 세정 장치 |
| JP5476657B2 (ja) * | 2007-04-10 | 2014-04-23 | 株式会社ニコン | 基板ホルダ、基板接合装置および基板接合方法 |
| TW201112345A (en) * | 2009-09-30 | 2011-04-01 | C Sun Mfg Ltd | Protection device for release film of wafer film laminator |
| US8334191B2 (en) * | 2009-12-11 | 2012-12-18 | Twin Creeks Technology, Inc. | Two-chamber system and method for serial bonding and exfoliation of multiple workpieces |
| US8042590B2 (en) * | 2010-02-03 | 2011-10-25 | C Sum Mfg. Ltd. | Protection mechanism for dry film laminator |
| US8016012B2 (en) * | 2010-02-03 | 2011-09-13 | Lai Chin-Sen | Flattening mechanism for dry film laminator |
| FR2972078A1 (fr) * | 2011-02-24 | 2012-08-31 | Soitec Silicon On Insulator | Appareil et procédé de collage par adhésion moléculaire |
| JP2013008921A (ja) * | 2011-06-27 | 2013-01-10 | Toshiba Corp | 半導体製造装置及び製造方法 |
| SG2014009369A (en) * | 2011-08-12 | 2014-09-26 | Ev Group E Thallner Gmbh | Apparatus and method for bonding substrates |
| CN102969223B (zh) * | 2011-08-31 | 2016-01-13 | 细美事有限公司 | 基板处理设备及基板处理方法 |
| JP5913914B2 (ja) * | 2011-11-08 | 2016-04-27 | 東京応化工業株式会社 | 基板処理装置及び基板処理方法 |
| KR101877600B1 (ko) * | 2011-11-25 | 2018-07-12 | 신에츠 엔지니어링 가부시키가이샤 | 기판 반송 장치 및 기판 조립 라인 |
| JP5606429B2 (ja) * | 2011-12-08 | 2014-10-15 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
| JP2013120902A (ja) * | 2011-12-08 | 2013-06-17 | Tokyo Electron Ltd | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
| CN102765601B (zh) * | 2012-07-30 | 2014-11-05 | 中国人民解放军国防科学技术大学 | 用于kdp晶体搬运和位置调整的真空吸附装置 |
| DE102012111246A1 (de) * | 2012-11-21 | 2014-05-22 | Ev Group E. Thallner Gmbh | Vorrichtung und Verfahren zum Bonden |
| US20140265165A1 (en) * | 2013-03-14 | 2014-09-18 | International Business Machines Corporation | Wafer-to-wafer fusion bonding chuck |
| JP6501447B2 (ja) | 2013-03-26 | 2019-04-17 | 芝浦メカトロニクス株式会社 | 貼合装置および貼合基板の製造方法 |
| JP6348500B2 (ja) * | 2013-09-25 | 2018-06-27 | 芝浦メカトロニクス株式会社 | 吸着ステージ、貼合装置、および貼合基板の製造方法 |
| JP6177739B2 (ja) * | 2014-08-07 | 2017-08-09 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
| US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
| US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
| US10304900B2 (en) | 2015-04-02 | 2019-05-28 | Microsoft Technology Licensing, Llc | Bending semiconductor chip in molds having radially varying curvature |
| US9870927B2 (en) | 2015-04-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Free-edge semiconductor chip bending |
| CN107533996B (zh) | 2015-04-10 | 2021-02-23 | Ev 集团 E·索尔纳有限责任公司 | 衬底固持器和用于接合两个衬底的方法 |
| KR102507283B1 (ko) | 2015-12-22 | 2023-03-07 | 삼성전자주식회사 | 기판 척 및 이를 포함하는 기판 접합 시스템 |
| KR102701964B1 (ko) * | 2016-02-16 | 2024-09-02 | 에베 그룹 에. 탈너 게엠베하 | 기판을 접합하기 위한 방법 및 장치 |
| SG11201806511XA (en) | 2016-03-22 | 2018-08-30 | Ev Group E Thallner Gmbh | Device and method for bonding substrates |
| JP6782087B2 (ja) * | 2016-03-28 | 2020-11-11 | 株式会社日本マイクロニクス | シート治具、ステージ、製造装置、及び二次電池の製造方法 |
| JP7067474B2 (ja) * | 2016-07-12 | 2022-05-16 | 株式会社ニコン | 積層基板製造方法、積層基板製造装置、積層基板製造システム、および基板処理装置 |
| CN105957817A (zh) * | 2016-07-12 | 2016-09-21 | 武汉新芯集成电路制造有限公司 | 一种晶圆键合方法 |
| KR102347321B1 (ko) * | 2016-08-12 | 2022-01-04 | 에베 그룹 에. 탈너 게엠베하 | 기판을 접합하기 위한 방법 및 샘플 홀더 |
| US10062727B2 (en) | 2016-09-09 | 2018-08-28 | Microsoft Technology Licensing, Llc | Strain relieving die for curved image sensors |
| CN115954300A (zh) | 2016-09-29 | 2023-04-11 | Ev 集团 E·索尔纳有限责任公司 | 用于结合两个基板的装置和方法 |
| KR102395194B1 (ko) * | 2017-06-21 | 2022-05-06 | 삼성전자주식회사 | 웨이퍼 본딩 장치 및 그 장치를 포함한 웨이퍼 본딩 시스템 |
| CN118098996A (zh) * | 2017-09-21 | 2024-05-28 | Ev 集团 E·索尔纳有限责任公司 | 接合基板的装置和方法 |
| TWI766105B (zh) | 2017-09-28 | 2022-06-01 | 美商魯道夫科技股份有限公司 | 晶圓級封裝組裝體處置 |
| KR102356595B1 (ko) | 2017-11-28 | 2022-01-28 | 삼성디스플레이 주식회사 | 플렉시블 디스플레이 장치의 제조방법 및 제조장치 |
| KR102455415B1 (ko) * | 2017-12-18 | 2022-10-17 | 삼성전자주식회사 | 기판 접합 장치 및 이를 이용한 기판의 접합 방법 |
| KR102468794B1 (ko) | 2018-07-06 | 2022-11-18 | 삼성전자주식회사 | 웨이퍼 본딩 장치 및 이를 이용한 웨이퍼 본딩 시스템 |
| CN111599664B (zh) * | 2019-02-21 | 2023-06-23 | 株洲中车时代半导体有限公司 | 一种硅片承载装置以及非对称扩散掺杂方法 |
| TWI822993B (zh) | 2019-05-08 | 2023-11-21 | 日商尼康股份有限公司 | 基板貼合裝置及基板貼合方法 |
| CN112563184A (zh) * | 2021-02-09 | 2021-03-26 | 北京中硅泰克精密技术有限公司 | 承载装置和半导体工艺设备 |
| US11594431B2 (en) * | 2021-04-21 | 2023-02-28 | Tokyo Electron Limited | Wafer bonding apparatus and methods to reduce post-bond wafer distortion |
| US12040215B2 (en) * | 2022-07-13 | 2024-07-16 | Sky Tech Inc. | Bonding machine with movable suction modules |
| EP4581668A1 (de) * | 2022-09-02 | 2025-07-09 | EV Group E. Thallner GmbH | Vakuumsubstrathalter mit optimierter vakuumdichtung |
| WO2025036559A1 (de) * | 2023-08-16 | 2025-02-20 | Ev Group E. Thallner Gmbh | Verfahren zum bonden eines ersten substrats mit einem zweiten substrat, vorrichtung zum bonden und anordnung aus erstem und zweitem substrat |
| JP2025040605A (ja) * | 2023-09-12 | 2025-03-25 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板厚み測定装置、基板貼り合わせシステムおよび基板厚み測定方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4603466A (en) | 1984-02-17 | 1986-08-05 | Gca Corporation | Wafer chuck |
| US4724222A (en) | 1986-04-28 | 1988-02-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Wafer chuck comprising a curved reference surface |
| EP0284818A1 (de) * | 1987-04-03 | 1988-10-05 | BBC Brown Boveri AG | Verfahren zum Herstellen eines Schichtverbunds sowie Vorrichtung zur Durchführung eines Verfahrens |
| JPS644013A (en) * | 1987-06-26 | 1989-01-09 | Sony Corp | Formation of substrate |
| JPH0651251B2 (ja) | 1987-11-18 | 1994-07-06 | 三菱化成株式会社 | ウェハー製造方法、及びその製造装置 |
| NL8900388A (nl) * | 1989-02-17 | 1990-09-17 | Philips Nv | Werkwijze voor het verbinden van twee voorwerpen. |
| JPH0744135B2 (ja) | 1989-08-28 | 1995-05-15 | 株式会社東芝 | 半導体基板の接着方法及び接着装置 |
| JP2911997B2 (ja) | 1989-10-20 | 1999-06-28 | 日本電気株式会社 | 半導体ウェハーへのテープ貼付装置 |
| US5217550A (en) | 1990-09-28 | 1993-06-08 | Dai Nippon Printing Co., Ltd | Alignment transfer method |
| JPH04148549A (ja) | 1990-10-12 | 1992-05-21 | Fujitsu Ltd | 半導体装置の評価方法 |
| JP3160936B2 (ja) | 1991-04-24 | 2001-04-25 | ソニー株式会社 | ウエハの貼り合わせ方法 |
| JPH05121543A (ja) | 1991-08-09 | 1993-05-18 | Teikoku Seiki Kk | ウエハーマウンタのウエハー支持方法、その装置及びその装置を備えるウエハーマウンタ |
| JP3175232B2 (ja) | 1991-09-30 | 2001-06-11 | ソニー株式会社 | 半導体ウェーハの接着方法 |
| KR100289348B1 (ko) * | 1992-05-25 | 2001-12-28 | 이데이 노부유끼 | 절연기판실리콘반도체장치와그제조방법 |
| US5300175A (en) | 1993-01-04 | 1994-04-05 | Motorola, Inc. | Method for mounting a wafer to a submount |
| JP3321882B2 (ja) * | 1993-02-28 | 2002-09-09 | ソニー株式会社 | 基板はり合わせ方法 |
| JPH0758191A (ja) * | 1993-08-13 | 1995-03-03 | Toshiba Corp | ウェハステージ装置 |
| JP3296130B2 (ja) * | 1995-04-13 | 2002-06-24 | 松下電器産業株式会社 | 電子部品の半田付け方法 |
| JP3668529B2 (ja) | 1995-07-26 | 2005-07-06 | ソニー株式会社 | 薄片状部材研磨用真空チャック装置 |
| SG71182A1 (en) * | 1997-12-26 | 2000-03-21 | Canon Kk | Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method |
| US6008113A (en) * | 1998-05-19 | 1999-12-28 | Kavlico Corporation | Process for wafer bonding in a vacuum |
-
1997
- 1997-08-27 JP JP9231132A patent/JPH1174164A/ja not_active Withdrawn
-
1998
- 1998-08-14 TW TW087113446A patent/TW480617B/zh not_active IP Right Cessation
- 1998-08-17 SG SG1998003112A patent/SG65092A1/en unknown
- 1998-08-20 EP EP98306689A patent/EP0899778A3/en not_active Withdrawn
- 1998-08-24 US US09/138,802 patent/US6451670B1/en not_active Expired - Fee Related
- 1998-08-26 AU AU81902/98A patent/AU732569B2/en not_active Ceased
- 1998-08-26 KR KR10-1998-0034737A patent/KR100396014B1/ko not_active Expired - Fee Related
- 1998-08-26 CN CN98118700A patent/CN1209644A/zh active Pending
-
2002
- 2002-07-29 US US10/206,214 patent/US6706618B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0899778A2 (en) | 1999-03-03 |
| US6706618B2 (en) | 2004-03-16 |
| AU732569B2 (en) | 2001-04-26 |
| EP0899778A3 (en) | 2001-03-21 |
| US20020034859A1 (en) | 2002-03-21 |
| US20020182038A1 (en) | 2002-12-05 |
| KR100396014B1 (ko) | 2003-10-17 |
| KR19990023901A (ko) | 1999-03-25 |
| JPH1174164A (ja) | 1999-03-16 |
| AU8190298A (en) | 1999-03-11 |
| US6451670B1 (en) | 2002-09-17 |
| CN1209644A (zh) | 1999-03-03 |
| TW480617B (en) | 2002-03-21 |
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