GB9817395D0 - Polysillicon etching method and etching apparatus - Google Patents
Polysillicon etching method and etching apparatusInfo
- Publication number
- GB9817395D0 GB9817395D0 GBGB9817395.8A GB9817395A GB9817395D0 GB 9817395 D0 GB9817395 D0 GB 9817395D0 GB 9817395 A GB9817395 A GB 9817395A GB 9817395 D0 GB9817395 D0 GB 9817395D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- polysillicon
- etching method
- etching apparatus
- polysillicon etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970066289A KR100271763B1 (en) | 1997-12-05 | 1997-12-05 | Apparatus and method for etching polysilicon layer |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9817395D0 true GB9817395D0 (en) | 1998-10-07 |
GB2332302A GB2332302A (en) | 1999-06-16 |
Family
ID=19526550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9817395A Withdrawn GB2332302A (en) | 1997-12-05 | 1998-08-10 | Etching polysilicon films |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH11176817A (en) |
KR (1) | KR100271763B1 (en) |
CN (1) | CN1218986A (en) |
DE (1) | DE19840437A1 (en) |
GB (1) | GB2332302A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4689841B2 (en) * | 1999-03-04 | 2011-05-25 | サーフィス テクノロジー システムズ ピーエルシー | Chlorine trifluoride gas generator |
DE10214620B4 (en) * | 2002-04-03 | 2010-02-04 | Robert Bosch Gmbh | Process for the plasmaless gas phase etching of a silicon wafer and device for its implementation |
DE10229037A1 (en) * | 2002-06-28 | 2004-01-29 | Robert Bosch Gmbh | Device and method for producing chlorine trifluoride and plant for etching semiconductor substrates with this device |
DE102016200506B4 (en) | 2016-01-17 | 2024-05-02 | Robert Bosch Gmbh | Etching device and etching process |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3511727A (en) * | 1967-05-08 | 1970-05-12 | Motorola Inc | Vapor phase etching and polishing of semiconductors |
JPS62250642A (en) * | 1986-04-24 | 1987-10-31 | Victor Co Of Japan Ltd | Reactive ion etching method |
US4731158A (en) * | 1986-09-12 | 1988-03-15 | International Business Machines Corporation | High rate laser etching technique |
JPH0793291B2 (en) * | 1986-12-19 | 1995-10-09 | アプライド マテリアルズインコーポレーテッド | Bromine and iodine etching method for silicon and silicide |
-
1997
- 1997-12-05 KR KR1019970066289A patent/KR100271763B1/en not_active IP Right Cessation
-
1998
- 1998-08-10 GB GB9817395A patent/GB2332302A/en not_active Withdrawn
- 1998-08-11 JP JP10226846A patent/JPH11176817A/en active Pending
- 1998-09-04 DE DE19840437A patent/DE19840437A1/en not_active Withdrawn
- 1998-09-04 CN CN98117482A patent/CN1218986A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR19990047772A (en) | 1999-07-05 |
KR100271763B1 (en) | 2001-02-01 |
JPH11176817A (en) | 1999-07-02 |
GB2332302A (en) | 1999-06-16 |
CN1218986A (en) | 1999-06-09 |
DE19840437A1 (en) | 1999-06-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |