CN1218986A - Etching method for poly crystalline silicon - Google Patents
Etching method for poly crystalline silicon Download PDFInfo
- Publication number
- CN1218986A CN1218986A CN98117482A CN98117482A CN1218986A CN 1218986 A CN1218986 A CN 1218986A CN 98117482 A CN98117482 A CN 98117482A CN 98117482 A CN98117482 A CN 98117482A CN 1218986 A CN1218986 A CN 1218986A
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- CN
- China
- Prior art keywords
- polysilicon
- process chamber
- gas
- caustic solution
- etchant gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 238000005530 etching Methods 0.000 title abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 51
- 229920005591 polysilicon Polymers 0.000 claims abstract description 49
- 150000002366 halogen compounds Chemical class 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 69
- 238000005260 corrosion Methods 0.000 claims description 28
- 230000007797 corrosion Effects 0.000 claims description 28
- 239000012159 carrier gas Substances 0.000 claims description 23
- 239000003518 caustics Substances 0.000 claims description 18
- 230000000737 periodic effect Effects 0.000 claims description 8
- 238000009835 boiling Methods 0.000 claims description 5
- 229910000951 Aluminide Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001399 aluminium compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
The present invention provides a polysilicon etching method and its etching equipmen. This polysilicon etching method contains the steps of: a) loading a wafer where a polysilicon film is formed on a specified film in a process chamber; b) adjusting the conditions of the pressure and temperature of the process chamber in setting ranges, c) etching the polysilicon film by supplying an etching gas composed of halogen compounds in the process chamber. The etching apparatus comprises: an etch gas supply source, a process chamber which has a device for controlling the temperature and connects to the etch gas supply source periodically; and a high vacuum pump which is connected to the process chamber for controlling the pressure in the process chamber.
Description
The present invention relates to the caustic solution and the corrosion device thereof of polysilicon, particularly do not having under the situation of plasma generation, isotropic etch is formed on the method for the polysilicon film on the special layers, and corrosion device.
Along with the development of semi-conductor industry, and the development of the high integration of semiconductor device, high power capacity and high characteristic, all require on limited zone increase integrated number of devices.
Correspondingly, wafer technologies has also obtained further developing, thereby make figure can make, and, in wafer fabrication process, used the dry etching technology usually in order to make the semiconductor device of highly integrated and more complicated (highly-sophisticated) less than the micron number magnitude.Dry etching technology using plasma commonly used.
The dry etching method of using plasma is very important and very difficult technology.The key factor that should consider in plasma etching technology is selectivity, rate of corrosion and uniformity of etch pattern (profile), sublayer or the like.These mainly are the influences that is subjected to the characteristic of corrosion device or supply gas.
When the using plasma dry etching corrodes when carrying silicon material layer, provide the halogen compounds that comprises fluorine (F) and chlorine (Cl) as etchant gas.In addition, for the etch pattern and the selectivity of improving layer characteristic, other kind gas can be added or in above-mentioned etchant gas as carrier gas.
In the mist every kind all has its oneself function, that is, have high-quality inert gas such as helium (He), argon (Ar) etc. and help in carrying etchant gas as carrier gas, and in the mist every kind is by all layers of physical sputtering corrosion.
Type according to plasma formation, the plasma dry caustic solution is divided into inductively coupled plasma (ICP) type and capacitance coupling plasma (CCP) type, wherein in the inductively coupled plasma type, be that magnetic forms by applying high voltage for the coil that is entangled in around the quartz ampoule for the plasma of plasma etching technology; In the capacitance coupling plasma type, plasma is to use the high-frequency signal that applies to anode and negative electrode to form.But CCP type and ICP type all need additional device, for example: plasma source current, the device that is complementary, grid bias power supply etc., thus make element, atomic group, ion etc., with existing with plasmoid from the reacting gas of being supplied.
Therefore, need a kind of new method of development, under the situation that does not produce plasma, use reacting gas to carry out dry corrosion process.
The purpose of this invention is to provide the corrosion device of polysilicon caustic solution and this method of enforcement, utilize and give the wherein processing environment of the inner treatment chamber of transport process gas, for example air pressure inside, temperature etc. are carried out the isotropic etch polysilicon film.
For reaching these purposes and other advantage, according to purpose of the present invention, the caustic solution of polysilicon may further comprise the steps:
A) determining that the wafer transport that has polysilicon film on (certain) layer enters process chamber; B) air pressure and the temperature of adjusting process chamber in preset range; C) etchant gas that contains halogen compounds is delivered into process chamber and corrodes polysilicon film.
Above-mentioned definite layer can be an oxide-film.
The air pressure of inner treatment chamber is in 0.5-3 torr scope, and the temperature of process chamber is higher than the boiling point of etchant gas, is lower than 800 ℃.
The etchant gas that comprises halogen compounds forms by different cycles element combinations in periodic table.
Etchant gas can be selected from following gas: ClF
3, BrF
5, IF
3, ClF, BrF
3, IF
5With BrF gas.
In addition, etchant gas also can be NF
3
Carrier gas is conveyed in the process chamber, and carrier gas N preferably
2Or Ar gas.
Etchant gas is conveyed in the process chamber with 300-4000sccm with 100-1000sccm and carrier gas.
According to a further aspect in the invention, the polysilicon corrosion device comprises: the etchant gas source of supply is used for supplying the halogen compounds or the NF that comprise that the element combinations by the periodic table different cycles forms
3Etchant gas.Process chamber is connected with the etchant gas source of supply and has temperature control equipment; With the high vacuum pipeline, link to each other with process chamber, be used for the atmospheric pressure state of control and treatment chamber.
The carrier gas source of supply that is used to supply carrier gas is connected with process chamber.
In addition, etchant gas source of supply and carrier gas source of supply and diffuser link together, and diffuser is connected with process chamber.
Temperature control equipment can be arranged on the heat block of process chamber outside.
The coil or the lamp of heat can be provided in heat block inside in addition.
And dried pump links to each other with the true pipeline of height.
For preventing the process chamber inwall gas attack that is corroded, the inwall of process chamber can be formed by aluminium compound.
Be appreciated that general description in front and following detailed all are exemplary and indicative, and provide further instruction for the present invention for required protection.
In the accompanying drawings:
Fig. 1 is the example schematic of expression according to polysilicon corrosion device of the present invention;
Fig. 2 is the embodiment sectional view of expression according to polysilicon caustic solution of the present invention;
Fig. 3 is the curve chart of expression polysilicon caustic solution of Fig. 2 according to the present invention.
Describe the present invention in detail referring now to the preferred embodiments of the present invention, example wherein of the present invention has been represented in the accompanying drawings.
As shown in Figure 1, polysilicon corrosion device of the present invention comprises and is used to supply halogen compounds gas and NF
3The etchant gas source of supply 10 of gas, wherein halogen compounds gas is that ion population by variety classes element in the periodic table forms, they have low binding energy, and NF
3Gas has low boiling and at high response under about 63kcal/mol and the binding energy between the N-F.
As etchant gas, do not comprise Cl
2Gas, it is the halogen compounds gas of the high binding energy that formed with covalent bond by same period element in the periodic table.
In other words, has the halogen gas of the low binding energy that forms by ionic bond, for example ClF
3, BrF
5, IF
3, ClF, BrF
3, IF
5Can use with BrF etc.Particularly, ClF
3Fusing point be about-76.3 ℃, boiling point is about 11.7 ℃.When room temperature (about 18 ℃), it shows as low pressure, and binding energy is 61.4kcal/mol between Cl-F, and this is unsettled because with other etchant gas CF for example
4Compare, it has low binding energy.
In addition, carrier gas source of supply 12 is used to supply carrier gas, for example N
2Or Ar gas, and carrier gas is to be used to carry etchant gas.
In addition, diffuser 14 is installed in corrosion gas stops in source of supply 10 and the carrier gas source of supply 12, is used at an easy rate the gas of each supply being mixed.
And diffuser 14 is connected with the process chamber 18 with ship shape vessel 20, and wherein ship shape vessel 20 are loaded with a plurality of wafers 22.At the upside of wafer, as shown in Figure 2, form oxide-film 32 and polysilicon film 34 successively, on polysilicon film 34, form photoresist figure (not shown).
The inwall of process chamber 18 is formed by aluminum.
In the outside of process chamber 18, the coil with heat or the heat block 16 of lamp are set, the temperature of the process chamber 18 that is used to raise.
The for example dried pump of high-vacuum pump 24 is connected with process chamber 18.
Therefore, by for example work of dried pump of the true pump 24 of height, the air pressure of process chamber 18 remains on the 0.5-3 torr, applies power supply or the work by lamp by giving the heat coils be installed in the heat block 16, and the internal temperature of process chamber is kept above 800 ℃, the boiling point of etchant gas.
In halogen family gas, ClF for example
3, BrF
5, IF
3, ClF, BrF
3, IF
5With BrF etc., selecteed etchant gas comes out from etchant gas source of supply 10, is transported into diffuser 14, and carrier gas N for example
2, from carrier gas source of supply 12, come out, be conveyed in the diffuser 14.
It is mixed and be conveyed into process chamber 18 to be transported to etchant gas in the diffuser 14 and carrier gas.At this moment, etchant gas is conveyed in the process chamber 18 with 100-1000sccm (standard cubic centimeter minute) flow, and carrier gas is conveyed in the process chamber with the flow of 300-4000sccm.
Correspondingly, etchant gas changes the atomic group state into by process chamber 18 temperature inside and air pressure, is in certain part of the etchant gas isotropic etch wafer 22 of atomic group state.Usually, the etchant gas that is in the atomic group state has the isotropic etch characteristic, and the etchant gas that is in ionic condition has the anisotropic etch characteristic.
In addition, when using the isotropic etch of etchant gas, the inwall of process chamber 18 is to be made by aluminium compound, the gas attack thereby the inwall that prevents process chamber 18 is corroded.
Then, use residual gas analysis instrument (RGA) analysis to stay gas in the process chamber 18, be used to be illustrated in the spectrum of the intensity corresponding element quality of electronics after the gas of ionization supply, the result as shown in Figure 3.
Referring to Fig. 3, from SiF
3 +And SiF
+Existence find out, be formed on the silicon and the ClF of the polysilicon film 34 on the wafer 22
3The F chemically reactive of etchant gas, thus SiF formed
x, SiCl
xDeng.From N
+And N
2 +Find out N
2Gas is used as carrier gas.
As another example, change the internal temperature of process chamber, it is identical that other process conditions keep, and as shown in Figure 2, forms oxide-film 32 and polysilicon film 34 successively on wafer 22, corrodes the photoresist figure on the polysilicon film 34 of wafer 22 within a certain period of time.The result is as shown in the table.
[table 1]
| Temperature | ??????400℃ | ?????500℃ | ????600℃ | 700 ℃ 800 ℃ 5700 (dust/minute) 9500 (dust/minute) 60 dusts/minute 140 dusts/minute |
| Polysilicon film | 1000 (dust/minute) | 1800 (dust/minute) | 3000 (dust/minute) | |
| Oxide-film | ???????- | 20 dusts/minute | 30 dusts/minute |
Referring to table 1, when internal temperature remains on 400 ℃, with 1000 dusts/minute speed corrosion polysilicon film, and do not corrode oxide-film.
When internal temperature remains on 500 ℃, with 1800 dusts/minute speed corrosion polysilicon film, and with 20 dusts/minute speed corrosion oxidation film.
When internal temperature remains on 600 ℃, with 3000 dusts/minute speed corrosion polysilicon film, and with 30 dusts/minute speed corrosion oxidation film.
When internal temperature remains on 700 ℃, with 5700 dusts/minute speed corrosion polysilicon film, and with 60 dusts/minute speed corrosion oxidation film.
When internal temperature remains on 800 ℃, with 9500 dusts/minute speed corrosion polysilicon film, and with 140 dusts/minute speed corrosion oxidation film.
When internal temperature remained on 400-800 ℃, polysilicon film was that the selectivity of oxide-film is higher than 20: 1, and this is a general desired ratio in the normal semiconductor etching process.
Therefore, according to the present invention, use the halogen compounds gas and the NF that form by the element combinations that has low binding energy on other periodic line that is positioned at periodic table
3Gas isotropic etch polysilicon film.
Obviously, to those skilled in the art,, can make various modifications and change not breaking away under the spirit and scope of the invention situation.Therefore, present invention includes the modification of the present invention and the change that are provided, they comprise within the scope of the appended claims and its equivalent.
Claims (18)
1. polysilicon caustic solution may further comprise the steps:
A) wafer transport that has polysilicon film on determining layer is gone in the process chamber;
B) air pressure and the temperature of adjusting process chamber in preset range; And
C) be conveyed into the etchant gas that contains halogen compounds in the process chamber and corrode polysilicon film.
2. polysilicon caustic solution as claimed in claim 1, wherein said definite layer is an oxide-film.
3. polysilicon caustic solution as claimed in claim 1, wherein the air pressure of inner treatment chamber is in 0.5-3 torr scope.
4. polysilicon caustic solution as claimed in claim 3, wherein the temperature of process chamber is higher than the boiling point of etchant gas, is lower than 800 ℃.
5. polysilicon caustic solution as claimed in claim 4, the etchant gas that wherein contains halogen compounds are to be combined by period element not of the same race in the periodic table.
6. polysilicon caustic solution as claimed in claim 5, wherein etchant gas is ClF
3Gas.
7. polysilicon caustic solution as claimed in claim 5, wherein etchant gas is selected from: BrF
5, IF
3, ClF, BrF
3, IF
5With BrF gas.
8. polysilicon caustic solution as claimed in claim 1, wherein etchant gas is NF
3
9. polysilicon caustic solution as claimed in claim 1, wherein carrier gas is imported in the process chamber.
10. polysilicon caustic solution as claimed in claim 9, wherein carrier gas is N
2Gas or Ar gas.
11. as the caustic solution of claim 10, wherein etchant gas is conveyed in the process chamber with 300-4000sccm with 100-1000sccm and carrier gas.
12. a polysilicon corrosion device comprises:
The etchant gas source of supply is used for supplying the halogen compounds or the NF that comprise that the element combinations by the periodic table different cycles forms
3Etchant gas.
Process chamber is connected with the etchant gas source of supply and has temperature control equipment; With
The high vacuum pipeline links to each other with process chamber, is used for the atmospheric pressure state of control and treatment chamber.
13. as the polysilicon corrosion device of claim 12, the carrier gas source of supply that wherein is used to supply carrier gas is connected with process chamber.
14. as the polysilicon corrosion device of claim 13, wherein the etchant gas source of supply links to each other with diffuser with the carrier gas source of supply, and diffuser is connected with process chamber.
15. as the polysilicon corrosion device of claim 14, wherein temperature control equipment is arranged on the heat block of process chamber outside.
16., wherein heat coil or lamp are set in the heat block the inside as the polysilicon corrosion device of claim 15.
17. as the polysilicon corrosion device of claim 16, wherein dried pump is connected with the high vacuum pipeline.
18. as the polysilicon corrosion device of claim 12, wherein the process chamber inwall is formed by aluminide.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR66289/97 | 1997-12-05 | ||
| KR1019970066289A KR100271763B1 (en) | 1997-12-05 | 1997-12-05 | Apparatus and method for etching polysilicon layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1218986A true CN1218986A (en) | 1999-06-09 |
Family
ID=19526550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98117482A Pending CN1218986A (en) | 1997-12-05 | 1998-09-04 | Etching method for poly crystalline silicon |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH11176817A (en) |
| KR (1) | KR100271763B1 (en) |
| CN (1) | CN1218986A (en) |
| DE (1) | DE19840437A1 (en) |
| GB (1) | GB2332302A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4689841B2 (en) * | 1999-03-04 | 2011-05-25 | サーフィス テクノロジー システムズ ピーエルシー | Chlorine trifluoride gas generator |
| DE10214620B4 (en) * | 2002-04-03 | 2010-02-04 | Robert Bosch Gmbh | Process for the plasmaless gas phase etching of a silicon wafer and device for its implementation |
| DE10229037A1 (en) * | 2002-06-28 | 2004-01-29 | Robert Bosch Gmbh | Device and method for producing chlorine trifluoride and plant for etching semiconductor substrates with this device |
| DE102016200506B4 (en) | 2016-01-17 | 2024-05-02 | Robert Bosch Gmbh | Etching device and etching process |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3511727A (en) * | 1967-05-08 | 1970-05-12 | Motorola Inc | Vapor phase etching and polishing of semiconductors |
| JPS62250642A (en) * | 1986-04-24 | 1987-10-31 | Victor Co Of Japan Ltd | Reactive ion etching method |
| US4731158A (en) * | 1986-09-12 | 1988-03-15 | International Business Machines Corporation | High rate laser etching technique |
| JPH0793291B2 (en) * | 1986-12-19 | 1995-10-09 | アプライド マテリアルズインコーポレーテッド | Bromine and iodine etching method for silicon and silicide |
-
1997
- 1997-12-05 KR KR1019970066289A patent/KR100271763B1/en not_active IP Right Cessation
-
1998
- 1998-08-10 GB GB9817395A patent/GB2332302A/en not_active Withdrawn
- 1998-08-11 JP JP10226846A patent/JPH11176817A/en active Pending
- 1998-09-04 DE DE19840437A patent/DE19840437A1/en not_active Withdrawn
- 1998-09-04 CN CN98117482A patent/CN1218986A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990047772A (en) | 1999-07-05 |
| KR100271763B1 (en) | 2001-02-01 |
| JPH11176817A (en) | 1999-07-02 |
| GB2332302A (en) | 1999-06-16 |
| DE19840437A1 (en) | 1999-06-17 |
| GB9817395D0 (en) | 1998-10-07 |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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