KR100396014B1 - 기판처리장치,기판지지장치,기판처리방법및기판제조방법 - Google Patents

기판처리장치,기판지지장치,기판처리방법및기판제조방법 Download PDF

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Publication number
KR100396014B1
KR100396014B1 KR10-1998-0034737A KR19980034737A KR100396014B1 KR 100396014 B1 KR100396014 B1 KR 100396014B1 KR 19980034737 A KR19980034737 A KR 19980034737A KR 100396014 B1 KR100396014 B1 KR 100396014B1
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South Korea
Prior art keywords
substrate
wafer
support
substrates
peripheral portion
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Expired - Fee Related
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KR10-1998-0034737A
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English (en)
Korean (ko)
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KR19990023901A (ko
Inventor
토루 타키사와
타카오 요네하라
켄지 야마가타
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캐논 가부시끼가이샤
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Publication of KR19990023901A publication Critical patent/KR19990023901A/ko
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Publication of KR100396014B1 publication Critical patent/KR100396014B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR10-1998-0034737A 1997-08-27 1998-08-26 기판처리장치,기판지지장치,기판처리방법및기판제조방법 Expired - Fee Related KR100396014B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9231132A JPH1174164A (ja) 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
JP97-231132 1997-08-27

Publications (2)

Publication Number Publication Date
KR19990023901A KR19990023901A (ko) 1999-03-25
KR100396014B1 true KR100396014B1 (ko) 2003-10-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0034737A Expired - Fee Related KR100396014B1 (ko) 1997-08-27 1998-08-26 기판처리장치,기판지지장치,기판처리방법및기판제조방법

Country Status (8)

Country Link
US (2) US6451670B1 (enExample)
EP (1) EP0899778A3 (enExample)
JP (1) JPH1174164A (enExample)
KR (1) KR100396014B1 (enExample)
CN (1) CN1209644A (enExample)
AU (1) AU732569B2 (enExample)
SG (1) SG65092A1 (enExample)
TW (1) TW480617B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN109935524A (zh) * 2017-12-18 2019-06-25 三星电子株式会社 基底结合设备和利用其结合基底的方法
US10553795B2 (en) 2017-11-28 2020-02-04 Samsung Display Co., Ltd. Flexible display device manufacturing method and manufacturing apparatus

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3720515B2 (ja) * 1997-03-13 2005-11-30 キヤノン株式会社 基板処理装置及びその方法並びに基板の製造方法
SG71182A1 (en) 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
DE60125952T2 (de) * 2000-08-16 2007-08-02 Massachusetts Institute Of Technology, Cambridge Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
JP3742000B2 (ja) * 2000-11-30 2006-02-01 富士通株式会社 プレス装置
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
JP2002351082A (ja) * 2001-05-24 2002-12-04 Adtec Engineeng Co Ltd 露光装置用基板ステージ
JP4201564B2 (ja) * 2001-12-03 2008-12-24 日東電工株式会社 半導体ウエハ搬送方法およびこれを用いた半導体ウエハ搬送装置
JP2003174077A (ja) * 2001-12-04 2003-06-20 Lintec Corp 吸着保持装置
AU2003222003A1 (en) * 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
FR2851846A1 (fr) * 2003-02-28 2004-09-03 Canon Kk Systeme de liaison et procede de fabrication d'un substrat semi-conducteur
JP4307130B2 (ja) * 2003-04-08 2009-08-05 キヤノン株式会社 露光装置
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
JP5061515B2 (ja) * 2006-06-29 2012-10-31 株式会社ニコン ウェハ接合装置及びウェハ接合方法
WO2008001626A1 (fr) * 2006-06-29 2008-01-03 Nikon Corporation appareil de métallisation de galette
WO2008003502A1 (de) * 2006-07-06 2008-01-10 Rena Sondermaschinen Gmbh Vorrichtung und verfahren zum vereinzeln und transportieren von substraten
JP4711904B2 (ja) * 2006-07-31 2011-06-29 日東電工株式会社 半導体ウエハへの粘着テープ貼付け方法および半導体ウエハからの保護テープ剥離方法
DE102006042026B4 (de) 2006-09-07 2016-08-04 Infineon Technologies Ag Vorrichtung zum Halten eines Substrats und Verfahren zur Behandlung eines Substrats
KR100824305B1 (ko) * 2006-12-22 2008-04-22 세메스 주식회사 지지 핀, 기판 지지 유닛 및 이를 포함하는 기판 세정 장치
JP5476657B2 (ja) * 2007-04-10 2014-04-23 株式会社ニコン 基板ホルダ、基板接合装置および基板接合方法
TW201112345A (en) * 2009-09-30 2011-04-01 C Sun Mfg Ltd Protection device for release film of wafer film laminator
US8334191B2 (en) * 2009-12-11 2012-12-18 Twin Creeks Technology, Inc. Two-chamber system and method for serial bonding and exfoliation of multiple workpieces
US8042590B2 (en) * 2010-02-03 2011-10-25 C Sum Mfg. Ltd. Protection mechanism for dry film laminator
US8016012B2 (en) * 2010-02-03 2011-09-13 Lai Chin-Sen Flattening mechanism for dry film laminator
FR2972078A1 (fr) * 2011-02-24 2012-08-31 Soitec Silicon On Insulator Appareil et procédé de collage par adhésion moléculaire
JP2013008921A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 半導体製造装置及び製造方法
SG2014009369A (en) * 2011-08-12 2014-09-26 Ev Group E Thallner Gmbh Apparatus and method for bonding substrates
CN102969223B (zh) * 2011-08-31 2016-01-13 细美事有限公司 基板处理设备及基板处理方法
JP5913914B2 (ja) * 2011-11-08 2016-04-27 東京応化工業株式会社 基板処理装置及び基板処理方法
KR101877600B1 (ko) * 2011-11-25 2018-07-12 신에츠 엔지니어링 가부시키가이샤 기판 반송 장치 및 기판 조립 라인
JP5606429B2 (ja) * 2011-12-08 2014-10-15 東京エレクトロン株式会社 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
JP2013120902A (ja) * 2011-12-08 2013-06-17 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
CN102765601B (zh) * 2012-07-30 2014-11-05 中国人民解放军国防科学技术大学 用于kdp晶体搬运和位置调整的真空吸附装置
DE102012111246A1 (de) * 2012-11-21 2014-05-22 Ev Group E. Thallner Gmbh Vorrichtung und Verfahren zum Bonden
US20140265165A1 (en) * 2013-03-14 2014-09-18 International Business Machines Corporation Wafer-to-wafer fusion bonding chuck
JP6501447B2 (ja) 2013-03-26 2019-04-17 芝浦メカトロニクス株式会社 貼合装置および貼合基板の製造方法
JP6348500B2 (ja) * 2013-09-25 2018-06-27 芝浦メカトロニクス株式会社 吸着ステージ、貼合装置、および貼合基板の製造方法
JP6177739B2 (ja) * 2014-08-07 2017-08-09 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
US9570488B2 (en) 2014-09-19 2017-02-14 Microsoft Technology Licensing, Llc Image sensor bending by induced substrate swelling
US10373995B2 (en) 2014-09-19 2019-08-06 Microsoft Technology Licensing, Llc Image sensor bending using tension
US10304900B2 (en) 2015-04-02 2019-05-28 Microsoft Technology Licensing, Llc Bending semiconductor chip in molds having radially varying curvature
US9870927B2 (en) 2015-04-02 2018-01-16 Microsoft Technology Licensing, Llc Free-edge semiconductor chip bending
CN107533996B (zh) 2015-04-10 2021-02-23 Ev 集团 E·索尔纳有限责任公司 衬底固持器和用于接合两个衬底的方法
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
KR102701964B1 (ko) * 2016-02-16 2024-09-02 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 장치
SG11201806511XA (en) 2016-03-22 2018-08-30 Ev Group E Thallner Gmbh Device and method for bonding substrates
JP6782087B2 (ja) * 2016-03-28 2020-11-11 株式会社日本マイクロニクス シート治具、ステージ、製造装置、及び二次電池の製造方法
JP7067474B2 (ja) * 2016-07-12 2022-05-16 株式会社ニコン 積層基板製造方法、積層基板製造装置、積層基板製造システム、および基板処理装置
CN105957817A (zh) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 一种晶圆键合方法
KR102347321B1 (ko) * 2016-08-12 2022-01-04 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 샘플 홀더
US10062727B2 (en) 2016-09-09 2018-08-28 Microsoft Technology Licensing, Llc Strain relieving die for curved image sensors
CN115954300A (zh) 2016-09-29 2023-04-11 Ev 集团 E·索尔纳有限责任公司 用于结合两个基板的装置和方法
KR102395194B1 (ko) * 2017-06-21 2022-05-06 삼성전자주식회사 웨이퍼 본딩 장치 및 그 장치를 포함한 웨이퍼 본딩 시스템
CN118098996A (zh) * 2017-09-21 2024-05-28 Ev 集团 E·索尔纳有限责任公司 接合基板的装置和方法
TWI766105B (zh) 2017-09-28 2022-06-01 美商魯道夫科技股份有限公司 晶圓級封裝組裝體處置
KR102468794B1 (ko) 2018-07-06 2022-11-18 삼성전자주식회사 웨이퍼 본딩 장치 및 이를 이용한 웨이퍼 본딩 시스템
CN111599664B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种硅片承载装置以及非对称扩散掺杂方法
TWI822993B (zh) 2019-05-08 2023-11-21 日商尼康股份有限公司 基板貼合裝置及基板貼合方法
CN112563184A (zh) * 2021-02-09 2021-03-26 北京中硅泰克精密技术有限公司 承载装置和半导体工艺设备
US11594431B2 (en) * 2021-04-21 2023-02-28 Tokyo Electron Limited Wafer bonding apparatus and methods to reduce post-bond wafer distortion
US12040215B2 (en) * 2022-07-13 2024-07-16 Sky Tech Inc. Bonding machine with movable suction modules
EP4581668A1 (de) * 2022-09-02 2025-07-09 EV Group E. Thallner GmbH Vakuumsubstrathalter mit optimierter vakuumdichtung
WO2025036559A1 (de) * 2023-08-16 2025-02-20 Ev Group E. Thallner Gmbh Verfahren zum bonden eines ersten substrats mit einem zweiten substrat, vorrichtung zum bonden und anordnung aus erstem und zweitem substrat
JP2025040605A (ja) * 2023-09-12 2025-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板厚み測定装置、基板貼り合わせシステムおよび基板厚み測定方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383391A1 (en) * 1989-02-17 1990-08-22 Koninklijke Philips Electronics N.V. Method of connecting two objects together, for example a slice of an insulating material to a slice of a semiconductor material

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603466A (en) 1984-02-17 1986-08-05 Gca Corporation Wafer chuck
US4724222A (en) 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface
EP0284818A1 (de) * 1987-04-03 1988-10-05 BBC Brown Boveri AG Verfahren zum Herstellen eines Schichtverbunds sowie Vorrichtung zur Durchführung eines Verfahrens
JPS644013A (en) * 1987-06-26 1989-01-09 Sony Corp Formation of substrate
JPH0651251B2 (ja) 1987-11-18 1994-07-06 三菱化成株式会社 ウェハー製造方法、及びその製造装置
JPH0744135B2 (ja) 1989-08-28 1995-05-15 株式会社東芝 半導体基板の接着方法及び接着装置
JP2911997B2 (ja) 1989-10-20 1999-06-28 日本電気株式会社 半導体ウェハーへのテープ貼付装置
US5217550A (en) 1990-09-28 1993-06-08 Dai Nippon Printing Co., Ltd Alignment transfer method
JPH04148549A (ja) 1990-10-12 1992-05-21 Fujitsu Ltd 半導体装置の評価方法
JP3160936B2 (ja) 1991-04-24 2001-04-25 ソニー株式会社 ウエハの貼り合わせ方法
JPH05121543A (ja) 1991-08-09 1993-05-18 Teikoku Seiki Kk ウエハーマウンタのウエハー支持方法、その装置及びその装置を備えるウエハーマウンタ
JP3175232B2 (ja) 1991-09-30 2001-06-11 ソニー株式会社 半導体ウェーハの接着方法
KR100289348B1 (ko) * 1992-05-25 2001-12-28 이데이 노부유끼 절연기판실리콘반도체장치와그제조방법
US5300175A (en) 1993-01-04 1994-04-05 Motorola, Inc. Method for mounting a wafer to a submount
JP3321882B2 (ja) * 1993-02-28 2002-09-09 ソニー株式会社 基板はり合わせ方法
JPH0758191A (ja) * 1993-08-13 1995-03-03 Toshiba Corp ウェハステージ装置
JP3296130B2 (ja) * 1995-04-13 2002-06-24 松下電器産業株式会社 電子部品の半田付け方法
JP3668529B2 (ja) 1995-07-26 2005-07-06 ソニー株式会社 薄片状部材研磨用真空チャック装置
SG71182A1 (en) * 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
US6008113A (en) * 1998-05-19 1999-12-28 Kavlico Corporation Process for wafer bonding in a vacuum

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383391A1 (en) * 1989-02-17 1990-08-22 Koninklijke Philips Electronics N.V. Method of connecting two objects together, for example a slice of an insulating material to a slice of a semiconductor material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10553795B2 (en) 2017-11-28 2020-02-04 Samsung Display Co., Ltd. Flexible display device manufacturing method and manufacturing apparatus
CN109935524A (zh) * 2017-12-18 2019-06-25 三星电子株式会社 基底结合设备和利用其结合基底的方法
KR20190073197A (ko) * 2017-12-18 2019-06-26 삼성전자주식회사 기판 접합 장치 및 이를 이용한 기판의 접합 방법
KR102455415B1 (ko) * 2017-12-18 2022-10-17 삼성전자주식회사 기판 접합 장치 및 이를 이용한 기판의 접합 방법
CN109935524B (zh) * 2017-12-18 2024-04-09 三星电子株式会社 基底结合设备和利用其结合基底的方法

Also Published As

Publication number Publication date
EP0899778A2 (en) 1999-03-03
US6706618B2 (en) 2004-03-16
AU732569B2 (en) 2001-04-26
EP0899778A3 (en) 2001-03-21
US20020034859A1 (en) 2002-03-21
US20020182038A1 (en) 2002-12-05
KR19990023901A (ko) 1999-03-25
JPH1174164A (ja) 1999-03-16
AU8190298A (en) 1999-03-11
SG65092A1 (en) 1999-05-25
US6451670B1 (en) 2002-09-17
CN1209644A (zh) 1999-03-03
TW480617B (en) 2002-03-21

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