AU732569B2 - Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method - Google Patents

Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method Download PDF

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Publication number
AU732569B2
AU732569B2 AU81902/98A AU8190298A AU732569B2 AU 732569 B2 AU732569 B2 AU 732569B2 AU 81902/98 A AU81902/98 A AU 81902/98A AU 8190298 A AU8190298 A AU 8190298A AU 732569 B2 AU732569 B2 AU 732569B2
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AU
Australia
Prior art keywords
substrate
wafer
substrates
pressing
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU81902/98A
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English (en)
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AU8190298A (en
Inventor
Toru Takisawa
Kenji Yamagata
Takao Yonehara
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of AU8190298A publication Critical patent/AU8190298A/en
Application granted granted Critical
Publication of AU732569B2 publication Critical patent/AU732569B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU81902/98A 1997-08-27 1998-08-26 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method Ceased AU732569B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9231132A JPH1174164A (ja) 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
JP9-231132 1997-08-27

Publications (2)

Publication Number Publication Date
AU8190298A AU8190298A (en) 1999-03-11
AU732569B2 true AU732569B2 (en) 2001-04-26

Family

ID=16918791

Family Applications (1)

Application Number Title Priority Date Filing Date
AU81902/98A Ceased AU732569B2 (en) 1997-08-27 1998-08-26 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method

Country Status (8)

Country Link
US (2) US6451670B1 (enExample)
EP (1) EP0899778A3 (enExample)
JP (1) JPH1174164A (enExample)
KR (1) KR100396014B1 (enExample)
CN (1) CN1209644A (enExample)
AU (1) AU732569B2 (enExample)
SG (1) SG65092A1 (enExample)
TW (1) TW480617B (enExample)

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US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
DE60125952T2 (de) * 2000-08-16 2007-08-02 Massachusetts Institute Of Technology, Cambridge Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
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US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
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US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
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JP5061515B2 (ja) * 2006-06-29 2012-10-31 株式会社ニコン ウェハ接合装置及びウェハ接合方法
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JP5476657B2 (ja) * 2007-04-10 2014-04-23 株式会社ニコン 基板ホルダ、基板接合装置および基板接合方法
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JP5606429B2 (ja) * 2011-12-08 2014-10-15 東京エレクトロン株式会社 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
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CN102765601B (zh) * 2012-07-30 2014-11-05 中国人民解放军国防科学技术大学 用于kdp晶体搬运和位置调整的真空吸附装置
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JP6501447B2 (ja) 2013-03-26 2019-04-17 芝浦メカトロニクス株式会社 貼合装置および貼合基板の製造方法
JP6348500B2 (ja) * 2013-09-25 2018-06-27 芝浦メカトロニクス株式会社 吸着ステージ、貼合装置、および貼合基板の製造方法
JP6177739B2 (ja) * 2014-08-07 2017-08-09 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
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US10304900B2 (en) 2015-04-02 2019-05-28 Microsoft Technology Licensing, Llc Bending semiconductor chip in molds having radially varying curvature
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CN107533996B (zh) 2015-04-10 2021-02-23 Ev 集团 E·索尔纳有限责任公司 衬底固持器和用于接合两个衬底的方法
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
KR102701964B1 (ko) * 2016-02-16 2024-09-02 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 장치
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JP7067474B2 (ja) * 2016-07-12 2022-05-16 株式会社ニコン 積層基板製造方法、積層基板製造装置、積層基板製造システム、および基板処理装置
CN105957817A (zh) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 一种晶圆键合方法
KR102347321B1 (ko) * 2016-08-12 2022-01-04 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 샘플 홀더
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KR102395194B1 (ko) * 2017-06-21 2022-05-06 삼성전자주식회사 웨이퍼 본딩 장치 및 그 장치를 포함한 웨이퍼 본딩 시스템
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CN111599664B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种硅片承载装置以及非对称扩散掺杂方法
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CN112563184A (zh) * 2021-02-09 2021-03-26 北京中硅泰克精密技术有限公司 承载装置和半导体工艺设备
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EP0415340A1 (en) * 1989-08-28 1991-03-06 Kabushiki Kaisha Toshiba Method and apparatus for bonding semiconductor substrates
JPH04324613A (ja) * 1991-04-24 1992-11-13 Sony Corp ウエハの貼り合わせ方法
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Also Published As

Publication number Publication date
EP0899778A2 (en) 1999-03-03
US6706618B2 (en) 2004-03-16
EP0899778A3 (en) 2001-03-21
US20020034859A1 (en) 2002-03-21
US20020182038A1 (en) 2002-12-05
KR100396014B1 (ko) 2003-10-17
KR19990023901A (ko) 1999-03-25
JPH1174164A (ja) 1999-03-16
AU8190298A (en) 1999-03-11
SG65092A1 (en) 1999-05-25
US6451670B1 (en) 2002-09-17
CN1209644A (zh) 1999-03-03
TW480617B (en) 2002-03-21

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