JPH1174164A - 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 - Google Patents

基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法

Info

Publication number
JPH1174164A
JPH1174164A JP9231132A JP23113297A JPH1174164A JP H1174164 A JPH1174164 A JP H1174164A JP 9231132 A JP9231132 A JP 9231132A JP 23113297 A JP23113297 A JP 23113297A JP H1174164 A JPH1174164 A JP H1174164A
Authority
JP
Japan
Prior art keywords
substrate
wafer
supporting
support
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9231132A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174164A5 (enExample
Inventor
Toru Takizawa
亨 滝沢
Kenji Yamagata
憲二 山方
Takao Yonehara
隆夫 米原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9231132A priority Critical patent/JPH1174164A/ja
Priority to TW087113446A priority patent/TW480617B/zh
Priority to SG1998003112A priority patent/SG65092A1/en
Priority to EP98306689A priority patent/EP0899778A3/en
Priority to US09/138,802 priority patent/US6451670B1/en
Priority to AU81902/98A priority patent/AU732569B2/en
Priority to CN98118700A priority patent/CN1209644A/zh
Priority to KR10-1998-0034737A priority patent/KR100396014B1/ko
Publication of JPH1174164A publication Critical patent/JPH1174164A/ja
Priority to US10/206,214 priority patent/US6706618B2/en
Publication of JPH1174164A5 publication Critical patent/JPH1174164A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP9231132A 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 Withdrawn JPH1174164A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP9231132A JPH1174164A (ja) 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
TW087113446A TW480617B (en) 1997-08-27 1998-08-14 Substrate processing method, and substrate fabrication method
SG1998003112A SG65092A1 (en) 1997-08-27 1998-08-17 Substrate processing apparatus substrate support apparatus substrate processing method and substrate fabrication method
EP98306689A EP0899778A3 (en) 1997-08-27 1998-08-20 Apparatus and method for pressing two substrates together
US09/138,802 US6451670B1 (en) 1997-08-27 1998-08-24 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method
AU81902/98A AU732569B2 (en) 1997-08-27 1998-08-26 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method
CN98118700A CN1209644A (zh) 1997-08-27 1998-08-26 基片处理装置,基片支承装置,基片处理方法和基片制造方法
KR10-1998-0034737A KR100396014B1 (ko) 1997-08-27 1998-08-26 기판처리장치,기판지지장치,기판처리방법및기판제조방법
US10/206,214 US6706618B2 (en) 1997-08-27 2002-07-29 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9231132A JPH1174164A (ja) 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法

Publications (2)

Publication Number Publication Date
JPH1174164A true JPH1174164A (ja) 1999-03-16
JPH1174164A5 JPH1174164A5 (enExample) 2005-06-02

Family

ID=16918791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9231132A Withdrawn JPH1174164A (ja) 1997-08-27 1997-08-27 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法

Country Status (8)

Country Link
US (2) US6451670B1 (enExample)
EP (1) EP0899778A3 (enExample)
JP (1) JPH1174164A (enExample)
KR (1) KR100396014B1 (enExample)
CN (1) CN1209644A (enExample)
AU (1) AU732569B2 (enExample)
SG (1) SG65092A1 (enExample)
TW (1) TW480617B (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008001626A1 (fr) * 2006-06-29 2008-01-03 Nikon Corporation appareil de métallisation de galette
JP2008010671A (ja) * 2006-06-29 2008-01-17 Nikon Corp ウェハ接合装置
JP2008262971A (ja) * 2007-04-10 2008-10-30 Nikon Corp 基板ホルダ、基板接合装置および基板接合方法
JP5139604B1 (ja) * 2011-11-25 2013-02-06 信越エンジニアリング株式会社 基板搬送装置及び基板組み立てライン
JP2013120902A (ja) * 2011-12-08 2013-06-17 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
JP2013120901A (ja) * 2011-12-08 2013-06-17 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
WO2014156987A1 (ja) * 2013-03-26 2014-10-02 芝浦メカトロニクス株式会社 貼合装置および貼合基板の製造方法
WO2015046243A1 (ja) * 2013-09-25 2015-04-02 芝浦メカトロニクス株式会社 吸着ステージ、貼合装置、および貼合基板の製造方法
KR20170074549A (ko) * 2015-12-22 2017-06-30 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
WO2017170124A1 (ja) * 2016-03-28 2017-10-05 株式会社日本マイクロニクス シート治具、ステージ、製造装置、及び二次電池の製造方法
KR20210144892A (ko) * 2019-05-08 2021-11-30 가부시키가이샤 니콘 기판 접합 장치 및 기판 접합 방법
WO2025057508A1 (ja) * 2023-09-12 2025-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板厚み測定装置、基板貼り合わせシステムおよび基板厚み測定方法

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3720515B2 (ja) * 1997-03-13 2005-11-30 キヤノン株式会社 基板処理装置及びその方法並びに基板の製造方法
SG71182A1 (en) 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
DE60125952T2 (de) * 2000-08-16 2007-08-02 Massachusetts Institute Of Technology, Cambridge Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
JP3742000B2 (ja) * 2000-11-30 2006-02-01 富士通株式会社 プレス装置
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
JP2002351082A (ja) * 2001-05-24 2002-12-04 Adtec Engineeng Co Ltd 露光装置用基板ステージ
JP4201564B2 (ja) * 2001-12-03 2008-12-24 日東電工株式会社 半導体ウエハ搬送方法およびこれを用いた半導体ウエハ搬送装置
JP2003174077A (ja) * 2001-12-04 2003-06-20 Lintec Corp 吸着保持装置
AU2003222003A1 (en) * 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
FR2851846A1 (fr) * 2003-02-28 2004-09-03 Canon Kk Systeme de liaison et procede de fabrication d'un substrat semi-conducteur
JP4307130B2 (ja) * 2003-04-08 2009-08-05 キヤノン株式会社 露光装置
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
WO2008003502A1 (de) * 2006-07-06 2008-01-10 Rena Sondermaschinen Gmbh Vorrichtung und verfahren zum vereinzeln und transportieren von substraten
JP4711904B2 (ja) * 2006-07-31 2011-06-29 日東電工株式会社 半導体ウエハへの粘着テープ貼付け方法および半導体ウエハからの保護テープ剥離方法
DE102006042026B4 (de) 2006-09-07 2016-08-04 Infineon Technologies Ag Vorrichtung zum Halten eines Substrats und Verfahren zur Behandlung eines Substrats
KR100824305B1 (ko) * 2006-12-22 2008-04-22 세메스 주식회사 지지 핀, 기판 지지 유닛 및 이를 포함하는 기판 세정 장치
TW201112345A (en) * 2009-09-30 2011-04-01 C Sun Mfg Ltd Protection device for release film of wafer film laminator
US8334191B2 (en) * 2009-12-11 2012-12-18 Twin Creeks Technology, Inc. Two-chamber system and method for serial bonding and exfoliation of multiple workpieces
US8042590B2 (en) * 2010-02-03 2011-10-25 C Sum Mfg. Ltd. Protection mechanism for dry film laminator
US8016012B2 (en) * 2010-02-03 2011-09-13 Lai Chin-Sen Flattening mechanism for dry film laminator
FR2972078A1 (fr) * 2011-02-24 2012-08-31 Soitec Silicon On Insulator Appareil et procédé de collage par adhésion moléculaire
JP2013008921A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 半導体製造装置及び製造方法
SG2014009369A (en) * 2011-08-12 2014-09-26 Ev Group E Thallner Gmbh Apparatus and method for bonding substrates
CN102969223B (zh) * 2011-08-31 2016-01-13 细美事有限公司 基板处理设备及基板处理方法
JP5913914B2 (ja) * 2011-11-08 2016-04-27 東京応化工業株式会社 基板処理装置及び基板処理方法
CN102765601B (zh) * 2012-07-30 2014-11-05 中国人民解放军国防科学技术大学 用于kdp晶体搬运和位置调整的真空吸附装置
DE102012111246A1 (de) * 2012-11-21 2014-05-22 Ev Group E. Thallner Gmbh Vorrichtung und Verfahren zum Bonden
US20140265165A1 (en) * 2013-03-14 2014-09-18 International Business Machines Corporation Wafer-to-wafer fusion bonding chuck
JP6177739B2 (ja) * 2014-08-07 2017-08-09 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
US9570488B2 (en) 2014-09-19 2017-02-14 Microsoft Technology Licensing, Llc Image sensor bending by induced substrate swelling
US10373995B2 (en) 2014-09-19 2019-08-06 Microsoft Technology Licensing, Llc Image sensor bending using tension
US10304900B2 (en) 2015-04-02 2019-05-28 Microsoft Technology Licensing, Llc Bending semiconductor chip in molds having radially varying curvature
US9870927B2 (en) 2015-04-02 2018-01-16 Microsoft Technology Licensing, Llc Free-edge semiconductor chip bending
CN107533996B (zh) 2015-04-10 2021-02-23 Ev 集团 E·索尔纳有限责任公司 衬底固持器和用于接合两个衬底的方法
KR102701964B1 (ko) * 2016-02-16 2024-09-02 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 장치
SG11201806511XA (en) 2016-03-22 2018-08-30 Ev Group E Thallner Gmbh Device and method for bonding substrates
JP7067474B2 (ja) * 2016-07-12 2022-05-16 株式会社ニコン 積層基板製造方法、積層基板製造装置、積層基板製造システム、および基板処理装置
CN105957817A (zh) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 一种晶圆键合方法
KR102347321B1 (ko) * 2016-08-12 2022-01-04 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 샘플 홀더
US10062727B2 (en) 2016-09-09 2018-08-28 Microsoft Technology Licensing, Llc Strain relieving die for curved image sensors
CN115954300A (zh) 2016-09-29 2023-04-11 Ev 集团 E·索尔纳有限责任公司 用于结合两个基板的装置和方法
KR102395194B1 (ko) * 2017-06-21 2022-05-06 삼성전자주식회사 웨이퍼 본딩 장치 및 그 장치를 포함한 웨이퍼 본딩 시스템
CN118098996A (zh) * 2017-09-21 2024-05-28 Ev 集团 E·索尔纳有限责任公司 接合基板的装置和方法
TWI766105B (zh) 2017-09-28 2022-06-01 美商魯道夫科技股份有限公司 晶圓級封裝組裝體處置
KR102356595B1 (ko) 2017-11-28 2022-01-28 삼성디스플레이 주식회사 플렉시블 디스플레이 장치의 제조방법 및 제조장치
KR102455415B1 (ko) * 2017-12-18 2022-10-17 삼성전자주식회사 기판 접합 장치 및 이를 이용한 기판의 접합 방법
KR102468794B1 (ko) 2018-07-06 2022-11-18 삼성전자주식회사 웨이퍼 본딩 장치 및 이를 이용한 웨이퍼 본딩 시스템
CN111599664B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种硅片承载装置以及非对称扩散掺杂方法
CN112563184A (zh) * 2021-02-09 2021-03-26 北京中硅泰克精密技术有限公司 承载装置和半导体工艺设备
US11594431B2 (en) * 2021-04-21 2023-02-28 Tokyo Electron Limited Wafer bonding apparatus and methods to reduce post-bond wafer distortion
US12040215B2 (en) * 2022-07-13 2024-07-16 Sky Tech Inc. Bonding machine with movable suction modules
EP4581668A1 (de) * 2022-09-02 2025-07-09 EV Group E. Thallner GmbH Vakuumsubstrathalter mit optimierter vakuumdichtung
WO2025036559A1 (de) * 2023-08-16 2025-02-20 Ev Group E. Thallner Gmbh Verfahren zum bonden eines ersten substrats mit einem zweiten substrat, vorrichtung zum bonden und anordnung aus erstem und zweitem substrat

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603466A (en) 1984-02-17 1986-08-05 Gca Corporation Wafer chuck
US4724222A (en) 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface
EP0284818A1 (de) * 1987-04-03 1988-10-05 BBC Brown Boveri AG Verfahren zum Herstellen eines Schichtverbunds sowie Vorrichtung zur Durchführung eines Verfahrens
JPS644013A (en) * 1987-06-26 1989-01-09 Sony Corp Formation of substrate
JPH0651251B2 (ja) 1987-11-18 1994-07-06 三菱化成株式会社 ウェハー製造方法、及びその製造装置
NL8900388A (nl) * 1989-02-17 1990-09-17 Philips Nv Werkwijze voor het verbinden van twee voorwerpen.
JPH0744135B2 (ja) 1989-08-28 1995-05-15 株式会社東芝 半導体基板の接着方法及び接着装置
JP2911997B2 (ja) 1989-10-20 1999-06-28 日本電気株式会社 半導体ウェハーへのテープ貼付装置
US5217550A (en) 1990-09-28 1993-06-08 Dai Nippon Printing Co., Ltd Alignment transfer method
JPH04148549A (ja) 1990-10-12 1992-05-21 Fujitsu Ltd 半導体装置の評価方法
JP3160936B2 (ja) 1991-04-24 2001-04-25 ソニー株式会社 ウエハの貼り合わせ方法
JPH05121543A (ja) 1991-08-09 1993-05-18 Teikoku Seiki Kk ウエハーマウンタのウエハー支持方法、その装置及びその装置を備えるウエハーマウンタ
JP3175232B2 (ja) 1991-09-30 2001-06-11 ソニー株式会社 半導体ウェーハの接着方法
KR100289348B1 (ko) * 1992-05-25 2001-12-28 이데이 노부유끼 절연기판실리콘반도체장치와그제조방법
US5300175A (en) 1993-01-04 1994-04-05 Motorola, Inc. Method for mounting a wafer to a submount
JP3321882B2 (ja) * 1993-02-28 2002-09-09 ソニー株式会社 基板はり合わせ方法
JPH0758191A (ja) * 1993-08-13 1995-03-03 Toshiba Corp ウェハステージ装置
JP3296130B2 (ja) * 1995-04-13 2002-06-24 松下電器産業株式会社 電子部品の半田付け方法
JP3668529B2 (ja) 1995-07-26 2005-07-06 ソニー株式会社 薄片状部材研磨用真空チャック装置
SG71182A1 (en) * 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
US6008113A (en) * 1998-05-19 1999-12-28 Kavlico Corporation Process for wafer bonding in a vacuum

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008001626A1 (fr) * 2006-06-29 2008-01-03 Nikon Corporation appareil de métallisation de galette
JP2008010671A (ja) * 2006-06-29 2008-01-17 Nikon Corp ウェハ接合装置
US8206525B2 (en) 2006-06-29 2012-06-26 Nikon Corporation Wafer bonding apparatus
US8794287B2 (en) 2006-06-29 2014-08-05 Nikon Corporation Wafer bonding apparatus
JP2008262971A (ja) * 2007-04-10 2008-10-30 Nikon Corp 基板ホルダ、基板接合装置および基板接合方法
JP5139604B1 (ja) * 2011-11-25 2013-02-06 信越エンジニアリング株式会社 基板搬送装置及び基板組み立てライン
WO2013076874A1 (ja) * 2011-11-25 2013-05-30 信越エンジニアリング株式会社 基板搬送装置及び基板組み立てライン
KR101877600B1 (ko) * 2011-11-25 2018-07-12 신에츠 엔지니어링 가부시키가이샤 기판 반송 장치 및 기판 조립 라인
TWI511225B (zh) * 2011-11-25 2015-12-01 Shinetsu Eng Co Ltd Substrate transfer device and substrate assembly line
JP2013120902A (ja) * 2011-12-08 2013-06-17 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
JP2013120901A (ja) * 2011-12-08 2013-06-17 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
KR20150130377A (ko) * 2013-03-26 2015-11-23 시바우라 메카트로닉스 가부시끼가이샤 접합 장치 및 접합 기판의 제조 방법
US9586391B2 (en) 2013-03-26 2017-03-07 Shibaura Mechatronics Corporation Bonding apparatus and method for manufacturing bonded substrate
JP2014209571A (ja) * 2013-03-26 2014-11-06 芝浦メカトロニクス株式会社 貼合装置および貼合基板の製造方法
WO2014156987A1 (ja) * 2013-03-26 2014-10-02 芝浦メカトロニクス株式会社 貼合装置および貼合基板の製造方法
CN105612598B (zh) * 2013-09-25 2019-09-24 芝浦机械电子株式会社 吸附台、贴合装置以及贴合基板的制造方法
JPWO2015046243A1 (ja) * 2013-09-25 2017-03-09 芝浦メカトロニクス株式会社 吸着ステージ、貼合装置、および貼合基板の製造方法
CN105612598A (zh) * 2013-09-25 2016-05-25 芝浦机械电子株式会社 吸附台、贴合装置以及贴合基板的制造方法
WO2015046243A1 (ja) * 2013-09-25 2015-04-02 芝浦メカトロニクス株式会社 吸着ステージ、貼合装置、および貼合基板の製造方法
US10586727B2 (en) 2013-09-25 2020-03-10 Shibaura Mechatronics Corporation Suction stage, lamination device, and method for manufacturing laminated substrate
KR20170074549A (ko) * 2015-12-22 2017-06-30 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
US11742224B2 (en) 2015-12-22 2023-08-29 Samsung Electronics Co., Ltd. Substrate chuck and substrate bonding system including the same
WO2017170124A1 (ja) * 2016-03-28 2017-10-05 株式会社日本マイクロニクス シート治具、ステージ、製造装置、及び二次電池の製造方法
JP2017178469A (ja) * 2016-03-28 2017-10-05 株式会社日本マイクロニクス シート治具、ステージ、製造装置、及び二次電池の製造方法
KR20210144892A (ko) * 2019-05-08 2021-11-30 가부시키가이샤 니콘 기판 접합 장치 및 기판 접합 방법
US12165902B2 (en) 2019-05-08 2024-12-10 Nikon Corporation Substrate bonding apparatus and substrate bonding method
WO2025057508A1 (ja) * 2023-09-12 2025-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板厚み測定装置、基板貼り合わせシステムおよび基板厚み測定方法

Also Published As

Publication number Publication date
EP0899778A2 (en) 1999-03-03
US6706618B2 (en) 2004-03-16
AU732569B2 (en) 2001-04-26
EP0899778A3 (en) 2001-03-21
US20020034859A1 (en) 2002-03-21
US20020182038A1 (en) 2002-12-05
KR100396014B1 (ko) 2003-10-17
KR19990023901A (ko) 1999-03-25
AU8190298A (en) 1999-03-11
SG65092A1 (en) 1999-05-25
US6451670B1 (en) 2002-09-17
CN1209644A (zh) 1999-03-03
TW480617B (en) 2002-03-21

Similar Documents

Publication Publication Date Title
JPH1174164A (ja) 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
JP3720515B2 (ja) 基板処理装置及びその方法並びに基板の製造方法
TWI750266B (zh) 接合裝置、接合系統、接合方法、程式及電腦記錄媒體
CN107706129B (zh) 接合装置和接合系统
JP5909453B2 (ja) 剥離装置、剥離システムおよび剥離方法
KR100408606B1 (ko) 기판처리장치, 기판지지장치, 기판처리방법 및 기판제조방법
JP5969663B2 (ja) 剥離装置、剥離システムおよび剥離方法
KR20140133416A (ko) 박리 장치, 박리 시스템, 박리 방법 및 컴퓨터 기억 매체
WO2020226152A1 (ja) 基板ホルダ、基板貼り合わせ装置および基板貼り合わせ方法
CN118299298A (zh) 一种解键合的装置及解键合的方法
JP7568704B2 (ja) 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP6076856B2 (ja) 剥離装置、剥離システムおよび剥離方法
JPH11195567A (ja) 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
JP2002190435A (ja) 基板の接合処理方法及び接合処理装置
KR102736261B1 (ko) 기판 분리 장치
JPH11195696A (ja) 基板支持台及び基板処理装置
JPH05160102A (ja) スピンナ及びそれを用いた半導体装置の製造方法
KR20230031777A (ko) 기판의 분할 방법
TWI899966B (zh) 基板處理裝置及基板處理方法
TWI901930B (zh) 接合裝置、接合系統、接合方法、接合程式及非暫時的電腦可讀取之記錄媒體
JPH11195690A (ja) ウエーハ移載装置
JP2019186304A (ja) 接合装置および接合方法
WO2025225404A1 (ja) 接合装置及び接合方法
TW202542962A (zh) 剝離裝置及剝離方法
WO2024128046A1 (ja) 接合装置、接合システムおよび接合方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040810

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040810

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7426

Effective date: 20040810

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20040810

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20051228