CN1198335C - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN1198335C CN1198335C CNB008148678A CN00814867A CN1198335C CN 1198335 C CN1198335 C CN 1198335C CN B008148678 A CNB008148678 A CN B008148678A CN 00814867 A CN00814867 A CN 00814867A CN 1198335 C CN1198335 C CN 1198335C
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- chip
- inner lead
- semiconductor chip
- resin package
- package covers
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Abstract
本发明涉及一种半导体装置(S1),其包括半导体芯片(5);放置该半导体芯片(5)的芯片放置用内部引线(1);与上述半导体芯片(5)的顶面导通的芯片连接用内部引线(2,3);将上述半导体芯片(5)和各内部引线(1~3)包封、并且从平面看呈较长矩形的树脂封装件(7)。上述芯片放置用内部引线(1)的端部呈沿上述树脂封装件(7)的长度方向延伸的较长矩形,或大致较长矩形。
Description
技术领域
本发明涉及用作二极管、晶体三极管等的平面安装型的半导体装置。
背景技术
在过去,人们曾提出用作二极管、或晶体三极管等的可进行平面安装的半导体装置。图16~18表示上述半导体装置的一个实例。该半导体装置S用作比如晶体三极管。该半导体装置S包括相当于基极端子的内部引线91;相当于集电极端子的内部引线92;相当于发射极端子的内部引线93。
各内部引线91~93按照各表面基本上处于同一平面上的方式并排设置。在内部引线91的端部,形成有基本上呈矩形的小岛94。在该小岛94的顶面上,以芯片焊接方式,放置有半导体芯片95(“小片”)。半导体芯片95通过金属丝W等进行引线接合,与各内部引线92,93导通。通过环氧树脂等的热硬化树脂,对半导体芯片95,金属丝W和各内部引线91~93进行包封,形成树脂封装件97。各内部引线91~93弯曲,在树脂封装件97的外部,分别与外部引线11~13连接。
但是,在该半导体装置S中,伴随该动作,从半导体芯片95发出热量。特别是在比如上述半导体装置S用作功率晶体管时,为了防止半导体芯片95的误动作,必须有效地将由半导体芯片95发出的热量,排放到树脂封装件97的外部。
在上述结构的半导体装置S中,半导体芯片95放置于小岛94上。由此,该小岛94用作放热体,通过内部引线91,或通过与内部引线91连接的树脂封装件97,排放热量。在此情况下,为了提高放热效果,希望小岛94的表面积较大。并且,为了提高集成于半导体芯片95内部的电子电路的性能,要求增加半导体芯片95的尺寸。因此,由于上述这些原因,人们希望小岛94的表面积较大。
在上述结构中,为了增加小岛94的表面积,人们考虑使并排设置于小岛94上的各内部引线92,93较小。但是,小岛94与各内部引线92,93从通过金属丝W等连接的关系方面来说,设置于基本上同一平面上。由此,在增加小岛94的表面积时,显然受到限制。在目前的状况下,从平面看内部引线91的面积与树脂封装件97的底面积的比例充其量为40%左右。因此,从使放热性提高的方面来说,人们希望提高上述比例的值。
发明内容
本发明的目的在于提供一种可消除上述问题,或至少减少上述问题的半导体装置。
本发明的第1方面所提供的半导体装置包括半导体芯片;放置该半导体芯片的芯片放置用内部引线;与上述半导体芯片的顶面导通的芯片连接用内部引线;以及将半导体芯片和各内部引线包封,并且从平面看呈较长矩形的树脂封装件,其特征在于芯片放置用内部引线的端部呈沿上述树脂封装件的长度方向延伸的较长矩形,或大致的较长矩形。
从平面看上述芯片放置用内部引线的面积优选为上述树脂封装件的底面积的50%以上。
根据上述结构,形成芯片连接用内部引线连接在放置于芯片放置用内部引线上的半导体芯片的顶面上的、所谓无引线结构。由此,芯片放置用内部引线的端部例如可沿从平面看呈较长矩形的树脂封装件的长度方向呈较长矩形、或大致较长矩形地延伸形成。由此,可按照尽可能地增加其表面积的方式,设置芯片放置用内部引线。因此,可通过面积增加的芯片放置用内部引线,或通过与芯片放置用内部引线连接的树脂封装件,将从半导体芯片发出的热量排放到外部。于是,可使该半导体装置的放热性提高。另外,芯片连接用内部引线直接与半导体芯片连接。由此,也可通过该芯片连接用内部引线,将从半导体芯片发出的热量排放到外部。因此,可有助于放热性的进一步提高。
按照本发明的优选实施例,半导体芯片放置于沿树脂封装件的长度方向延伸的芯片放置用内部引线的中间部上。
根据该结构,从半导体芯片发出的热量通过芯片放置用内部引线,按照沿树脂封装件的长度方向(左右方向)扩散的方式传递。由此,与将半导体芯片放置于芯片放置用内部引线中偏靠一侧的部位的情况相比,可以良好的效率进行放热。
按照本发明的另一优选实施例,芯片放置用内部引线的端部以外的宽度与上述端部的宽度相等。
根据该结构,可进一步提高芯片放置用内部引线向外部的放热效果。
本发明的第2方面所提供的半导体装置包括第1和第2半导体芯片;分别放置各半导体芯片的第1和第2芯片放置用内部引线;分别与各半导体芯片的顶面导通的多个芯片连接用内部引线;将各半导体芯片和各内部引线包封,并且从平面看呈较长矩形的树脂封装件,其特征在于,各芯片放置用内部引线的端部按照其整体从平面看呈沿树脂封装件的长度方向延伸的较长矩形,或大致的较长矩形的方式形成。
芯片放置用内部引线的端部优选按照其整体占从平面看上述树脂封装件的整个底面积的约50%以上的方式形成。
根据此结构,在树脂封装件内部设置多个半导体芯片时,放置各半导体芯片的各芯片放置用内部引线的端部按照其整体从平面看呈沿树脂封装件的长度方向延伸的较长矩形,或大致较长矩形的方式形成。即,即使在该半导体装置中,也可与第1方面所提供的半导体装置相同,通过采用无引线结构而实现上述构成。由此,各芯片放置用内部引线的端部可按照其整体占从平面看上述树脂封装件的整个底面积的约50%以上的方式形成。因此,可有效地分散从各半导体芯片发出的热量,将其排放到外部。
按照本发明的优选实施例,各芯片放置用内部引线的端部设置于同一平面上,由此,各半导体芯片并排设置于树脂封装件内部。
如果象现有结构那样,将半导体芯片设置于基本上同一平面上,在设置多个半导体芯片时,半导体装置的尺寸沿平面方向扩大。但是,如果象上述那样,采用无引线结构,则即使将各半导体芯片并排设置于树脂封装件内部,仍可抑制半导体装置的沿平面方向的尺寸扩大。由此,可实质上减小半导体装置本身的尺寸。
按照本发明的另一优选实施例,芯片连接用内部引线中的任何一个端部按照跨过第1和第2半导体芯片的两个顶面的方式设置,由此,将上述各半导体芯片的两个顶面相互连接。
如果象上述结构那样,将各芯片放置用内部引线的端部设置于同一平面上,则半导体芯片并排设置。随之,其顶面也设置于同一平面上,故可按照跨过各半导体芯片的两个顶面的方式,设置芯片连接用内部引线,可将各半导体芯片的两个顶面相互连接。即,可共用半导体芯片的信号端子,可减少半导体装置的外部端子数量。由此,可降低部件成本。
按照本发明的另一优选实施例,各半导体芯片按照该上下面彼此相反的方式,设置在上述树脂封装件内部,第1芯片放置用内部引线的端部设置在树脂封装件的底面附近,第2芯片放置用内部引线的端部设置在树脂封装件的顶面附近。
根据该结构,通过多个半导体芯片的上下面按照相反的方式设置,分别放置半导体芯片的芯片放置用内部引线按照与上下分离的方式设置于树脂封装件的内部。由此,与各内部引线偏靠一侧地设置于树脂封装件的内部的结构相比,进一步分散从各半导体芯片发出的热量。因此,可进一步提高半导体芯片的各芯片放置用内部引线的放热性。
根据参照附图进行的以下的具体说明,会更加明白本发明的其它的特征和优点。
附图说明
图1为本发明的第1实施例的半导体装置的内部结构图。
图2为沿图1所示的半导体装置中的II-II方向看到的内部结构图。
图3为用于说明芯片放置用内部引线的面积与树脂封装件的底面积的比例的图。
图4为本发明的第2实施例的半导体装置的内部结构图。
图5为本发明的第3实施例的半导体装置的内部结构图。
图6为本发明的第4实施例的半导体装置的内部结构图。
图7为本发明的第5实施例的半导体装置的透视图。
图8为沿图7所示的半导体装置中的VIII-VIII方向看到的内部结构图。
图9为沿图7所示的半导体装置中的IX-IX方向看到的截面图。
图10为本发明的第6实施例的半导体装置的内部结构图。
图11为沿图10所示的半导体装置中的XI-XI方向看到的截面图。
图12为本发明的第7实施例的半导体装置的内部结构图。
图13为沿图12所示的半导体装置中的XIII-XIII方向看到的截面图。
图14为表示图12所示的半导体装置的制造方法的图。
图15为表示图12所示的半导体装置的制造方法的图。
图16为表示现有的半导体装置的一个实例的透视图。
图17为沿图16所示的半导体装置的XVII-XVII方向看到的内部结构图。
图18为沿图16所示的半导体装置的XVIII-XVIII方向看到的内部结构图。
具体实施方式
下面参照附图,对本发明的优选实施例进行具体说明。另外,在这些附图中,相同或类似的部件由相同的标号表示。
首先,参照图1~3进行说明。这些附图表示本发明的第1实施例的半导体装置S1。该半导体装置S1包括放置半导体芯片5的芯片放置用引线1;与半导体芯片5的顶面导通的其中一个芯片连接用内部引线2和另一芯片连接用内部引线3。在该半导体装置S1中,比如在用作晶体三极管时,芯片放置用引线1比如相当于基极端子(或栅极端子)。其中一个芯片连接用内部引线2相当集电极端子(或漏极端子)。另一芯片连接用内部引线3相当于发射极端子(或源极端子)。
在芯片放置用引线1的一端,形成放置有半导体芯片5的小岛4。另外,半导体芯片5和各内部引线1~3通过环氧树脂等的热硬化树脂,采用规定的模具等进行包封,形成从平面看呈较长矩形的树脂封装件7。在该树脂封装件7的外部,分别设置有与内部引线1~3连接的外部引线11~13。另外,半导体装置S1的外形与图16所示的半导体装置S相同。
芯片放置用内部引线1的另一端弯曲,与露在树脂封装件7的外部的外部引线11连接。芯片放置用内部引线1和外部引线11由具有良好的热传导性的铜等形成。形成于芯片放置用内部引线1的一端的小岛4,为了提高放热效果,呈沿树脂封装件7的长度方向延伸的较长矩形,或大致的较长矩形,其表面积较大。半导体芯片5放置在沿树脂封装件7的长度方向延伸的小岛4的中间部。
在各芯片连接用内部引线2,3中,分别在一端,形成有其幅度比各芯片连接用内部引线2,3稍大的平坦部2a,3a,外部引线12,13分别与其另一端连接。各芯片连接用内部引线2,3和各外部引线12,13与芯片连接用内部引线1和外部引线11相同,由具有良好的热传导性的铜等形成。
各芯片连接用内部引线2,3中的平坦部2a,3a按照与放置于小岛4上的半导体芯片5的上方重合的方式设置,其通过凸部6,与半导体芯片5的顶面导通。即,在本实施例中,半导体芯片5和各芯片连接用内部引线2,3之间的连接不象现有方案那样采用引线,而是形成所谓的无引线结构。具体来说,半导体芯片5放置于芯片放置用内部引线1上,各芯片连接用内部引线2,3与半导体芯片5的顶面连接。由此,在本实施例中,形成通过内部引线1~3,从上下夹住半导体芯片5的立体结构。
通过采用上述那样的无引线结构,可通过尽可能地增加芯片放置用内部引线的表面积来设置芯片放置用内部引线1。比如,象上述那样,小岛4的形状可呈沿树脂封装件7的长度方向延伸的较长矩形,或呈大致的较长矩形。比如,可使从平面看的芯片放置用内部引线1的面积,为树脂封装件7的底面积的50%以上(具体内容将在后面说明)。由此,通过增加了面积的芯片放置用内部引线1,或通过与芯片放置用内部引线1连接的树脂封装件7,可有效地将从半导体芯片5发出的热量排到外部。因此,可使该半导体装置S1的放热性提高。
另外,半导体芯片5放置于沿树脂封装件7的长度方向延伸的芯片放置用内部引线1的中间部。由此,从半导体芯片5发出的热量通过芯片放置用内部引线1,按照沿树脂封装件7的长度方向(左右方向)扩散的方式传递。因此,与半导体芯片5放置于半导体芯片1的偏靠一侧的部位的情况相比,可提高放热性的效率。
此外,各芯片连接用内部引线2,3与半导体芯片5直接连接。由此,即使通过该各内部引线2,3,从半导体芯片5发出的热量也可排放到外部。因此,与主要依赖芯片放置用内部引线的现有结构相比,可进一步提高半导体芯片5的放热性。
在这里,以给出更具体的数值的方式,对上述本实施例的效果进行说明。具体来说,通过将从平面看的芯片放置用内部引线1的面积,与树脂封装件7的底面积进行比较,对放热性的情况进行评价。另外,在下面的说明中,芯片放置用内部引线1的面积的值为小岛4的面积和与小岛4连接、在半导体装置S1内延伸部分(以下称为“连接引线14”)的面积的总和。并且,以下由于芯片放置用内部引线1弯曲,故严格地说,连接引线14的面积与实际的面积不同,但是在此,将其作为未弯曲的形式进行评价。
图3为用于说明从平面看的芯片放置用内部引线1的面积,与树脂封装件7的底面积的比例的图。按照该图3,树脂封装件7的底面积根据树脂封装件7的进深A×宽度B计算。从平面看的芯片放置用内部引线1的面积通过将小岛4的面积与连接引线14的面积相加而求出。即,小岛4的面积通过小岛4的进深C×宽度D计算。连接引线14的面积分别通过连接引线14的进深E×宽度F求出。
表1表示各边的长度A~F的具体数值。按照该表1,树脂封装件7的底面积SA为4.56mm2。另外,连接引线14的宽度F为0.4mm,故芯片放置用内部引线1的面积SB为2.38mm2。因此,芯片放置用内部引线1的面积SB与树脂封装件7的底面积SA的比例SB/SA为51.9%。
表1
象上述那样,芯片放置用内部引线1的面积SB的比例,与为40%的现有结构的面积比例相比,约大10%,由此知道,可使放热性提高。另外,根据实验证实,在本实施例的半导体装置S1中,通过形成较长矩形的小岛4,与用导线连接芯片放置用内部引线1的现有结构相比,求出放热量约为2倍,放热特性提高约2倍。
下面对该半导体装置S1的制造方法进行简单说明。首先,通过对铜制的薄板进行冲压加工,然后,对其进行规定的成型加工来制造芯片放置用内部引线1。在此情况下,芯片放置用内部引线1按照端部具有矩形小岛4的方式形成。在此状态下,芯片放置用内部引线1呈通过多个系杆连接,并沿一定方向延伸的长尺状结构。另外,其中一个芯片连接用内部引线2和另一个芯片连接用内部引线3均与芯片放置用内部引线1相同,通过对铜制的薄板进行冲压进工,然后,对其进行规定的成型加工而制成。在此情况下,按照在各内部引线2,3的端部,具有平坦部2a,3a的方式形成。
接着,采用比如粘接剂,将半导体芯片5连接在芯片放置用内部引线1的小岛4的顶面上。接着,将其中一个芯片连接用内部引线2和另一个芯片连接用内部引线3,连接在半导体芯片5的顶面上。具体来说,在半导体芯片5的顶面上,通过电解镀方式,生成由Ag形成的凸部6。在半导体芯片5的顶面上,在长度方向的端部的对称的位置,形成两个凸部6。然后,通过使焊剂熔化,将其中一个芯片连接用内部引线2中的平坦部2a,与其中一个凸部6连接。同样,通过使焊剂熔化,将另一个芯片连接用内部引线3中的平坦部3a,与另一个凸部6连接。
在将各芯片连接用内部引线2,3与半导体芯片5连接后,采用规定的模具,通过环氧树脂等的热硬化树脂,对半导体芯片5、各内部引线1~3进行包封,形成树脂封装件7。另外,经过对在外部露出的各外部引线11~13进行焊锡电镀处理,去除系杆等不需要部位的工序,获得图1和图2所示的半导体装置S1。
图4为本发明的第2实施例的半导体装置S2的内部结构图。按照该图4,与小岛4连接的连接引线14的宽度F大于第1实施例的半导体装置S1的相应尺寸,由此,形成芯片放置用内部引线1。
即,在该第2实施例中,根据表1知道,连接引线14的宽度F为1.2mm,芯片放置用内部引线1的面积SB为2.57mm2。因此,芯片放置用内部引线1的面积SB与树脂封装件7的底面积SA的比例SB/SA为56.4%。于是,与第1实施例的半导体芯片S1相比,芯片放置用内部引线1的面积进一步增加。
图5为本发明的第3实施例的半导体芯片S3的内部结构图。按照该图5,连接引线14的宽度F与第1实施例和第2实施例的半导体芯片S1,S2的宽度相比进一步增加。即,按照连接引线14的宽度F与小岛4的宽度相同的方式,形成芯片放置用内部引线1。
在该第3实施例中,按照表1,小岛4的宽度F与芯片放置用内部引线1的横向宽度D相同,为2.45mm,芯片放置用内部引线1的面积SB为2.89mm2。因此,芯片放置用内部引线1的面积SB与树脂封装件7的底面积SA的比例SB/SA为63.4%。于是,与第1和第2实施例的半导体芯片S1,S2相比,芯片放置用内部引线1的面积进一步增加。这样,如小岛4的宽度与连接引线14的宽度相等,则可增加上述比例SB/SA,并且可进一步增加在外部露出的外部引线11的部分,可使放热性大幅度增加。
另外,象这样,面积较大的小岛4、各芯片连接用内部引线2,3设置于半导体芯片S3内部,由此,它们用作所谓的增强部件。因此,具有下述优点,即,半导体芯片S3的抗弯强度提高,比如,可提高在外部的印刷电路板上安装时的机械强度。
图6为本发明的第4实施例的半导体芯片S4的内部结构图。按照上述第1~第3实施例的半导体装置S1~S3,各外部引线11~13从树脂封装件7的底面的外缘附近延伸到外部。由此,即使在为了扩大面积,打算使芯片放置用内部引线1中的小岛4延伸到各芯片连接用内部引线2,3一侧,各芯片连接用内部引线2,3本身仍构成妨碍,难于延伸。
与此相对,按照第4实施例的半导体装置S4,外部引线12,13从树脂封装件7的侧面的顶部向外部露出。由此,可使芯片放置用内部引线1中的小岛4,沿水平方向在树脂封装件7内的范围内延伸。因此,与上述实施例相比较,可提高芯片放置用内部引线1的面积SB与树脂封装件7的底面积SA的比例。象这样,即使在使各内部引线1~3发生结构变形的情况下,仍可使放热性提高。
此外,第4实施例的半导体装置S4按照半导体芯片5位于树脂封装件7内的顶部的方式形成。由此,位于树脂封装件7内部的连接引线14长于上述第3实施例的半导体装置S3的相应连接引线。由此,弯曲的连接引线14的长度足够大于第3实施例的半导体装置S3的相应引线长度,由此,芯片放置用内部引线1的表面积增加,可有助于放热性的提高。
下面参照图7~9进行说明。这些附图表示本发明的第5实施例的半导体装置S5。在本实施例的半导体装置S5中,与上述第1~第4实施例的半导体装置S1~S4相比,半导体芯片、芯片放置用内部引线和芯片连接用内部引线的数量是不同的。
本实施例的半导体装置S5包括由比如二极管形成的第1半导体芯片21,以及由晶体三极管形成的第2半导体芯片22。该第1半导体芯片21放置在形成于第1芯片放置用内部引线24的一端的、基本上呈矩形的小岛34上。
第2半导体芯片22放置在形成于第2芯片放置用内部引线26的一端的小岛36上。该小岛36呈沿树脂封装件7的长度方向延伸的较长矩形,或大致较长矩形。
各小岛34,36在树脂封装件7内部,设置于同一平面上。由此,第1和第2半导体芯片21,22也并排设置于同一平面上。
第1芯片连接用内部引线25与第1半导体芯片21的顶面连接。具体来说,在第1芯片连接用内部引线25的一端,形成基本上呈矩形的平坦部25a。该平坦部25a按照在上方与第1半导体芯片21重叠的方式设置,并且通过凸部35,与第1半导体芯片21的顶面导通。
第2芯片连接用内部引线27和第3芯片连接用内部引线28连接在第2半导体芯片22的顶面上。具体来说,在第2芯片连接用内部引线27的一端,形成基本上呈矩形的平坦部27a。该平坦部27a在第2半导体芯片22的顶面上,按照在上方与基本上半个区域重叠的方式设置。该平坦部27a通过凸部37,与第2半导体芯片22的顶面导通。
还有,在第3芯片连接用内部引线28的一端,形成有平坦部28a。该平坦部28a在第2半导体芯片22的顶面上,按照在上方与和上述区域不同的、基本上半个区域重叠的方式设置。该平坦部28a通过凸部38,与第2半导体芯片22的顶面导通。
各半导体芯片21,22和各内部引线24~28通过环氧树脂等密封,形成从平面看基本呈较长矩形的树脂封装件7。
各内部引线24~28的另一端弯曲,分别与从树脂封装件7向外部露出的外部引线29~33连接。上述第1芯片放置用内部引线24和第1芯片连接用内部引线25与从树脂封装件7的长度方向一端部Sa附近的两侧面Sc向外部露出的外部引线29,30连接。另外,第2芯片放置用内部引线26和第2芯片连接用内部引线27与从树脂封装件7的长度方向另一端部Sb附近的两侧面Sc露出的外部引线31,32分别连接。外部引线33从外部引线30和外部引线32之间的侧面Sc向外部露出。
再有,上述第1芯片放置用内部引线24相当于二极管的正极端子。第1芯片连接用内部引线25相当于二极管的负极端子。第2芯片放置用内部引线26相当于晶体三极管的集电极端子。第2芯片连接用内部引线27相当于晶体三极管的基极端子。第3芯片连接用内部引线28相当于晶体三极管的发射极端子。
按照上述半导体装置S5,各半导体芯片21,22放置于各小岛34,36上。另外,采用所谓的各芯片连接用内部引线25,27,28与各半导体芯片21,22的顶面连接的无导线结构。此外,小岛34包括可放置第1半导体芯片21的足够大的面积。
小岛36基本上呈较长矩形。由此,两个小岛34,36按照作为整体从平面看呈沿树脂封装件7的长度方向延伸的较长矩形,或大致较长矩形的方式形成。更具体地说,两个小岛34,36按照作为整体从平面看为树脂封装件7的整个底面积的约50%以上的方式形成。因此,使两个小岛34,36的面积扩大,通过各内部引线24~28,或通过与各内部引线24~28连接的树脂封装件7,可有效地将从第1和第2半导体芯片21,22发出的热量排到外部。
另外,如果象现有结构那样,将各内部引线基本上设置于同一平面上,则在设置多个半导体芯片的情况下,半导体装置S的尺寸可沿平面方向增加。但是,如果象上述那样,采用无引线结构,则可在抑制装置的平面方向的尺寸增加的同时,将多个半导体芯片21,22设置于树脂封装件7的内部。由此,可实质上使半导体装置S5本身的尺寸减小。
图10和图11为本发明的第6实施例的半导体装置S6的内部结构图。在本实施例的半导体装置S6中,分别具有由两个晶体三极管形成的第1和第2半导体芯片41,42,两个晶体三极管的发射极端子共同采用1个端子。
第1半导体芯片41放置在形成于第1芯片放置用内部引线43的一端的小岛51上。该小岛51呈沿树脂封装件7的长度方向延伸的较长矩形,或大致较长矩形。
第2半导体芯片42放置在形成于第2芯片放置用内部引线45的一端的小岛52上。该小岛52呈沿树脂封装件7的长度方向延伸的较长矩形,或大致较长矩形。
各小岛51,52在树脂封装件7内部,设置于同一平面上,并且按照小岛51,52的端部接近的方式并排设置。由此,第1和第2半导体芯片41,42也并排设置于同一平面上。
第1芯片连接用内部引线44与第1半导体芯片41的顶面连接。具体来说,在第1芯片连接用内部引线44的一端,形成有平坦部44a。该平坦部44a按照在上方与第1半导体芯片41重叠的方式设置,并且分别通过凸部53,与第1半导体芯片41的顶面导通。
第2芯片连接用内部引线46与第2半导体芯片42的顶面连接。具体来说,在第1芯片连接用内部引线46的一端,形成有平坦部46a。该平坦部46a按照在上方与第1半导体芯片42重叠的方式设置,并且分别通过凸部54,与第1半导体芯片42的顶面导通。
第3芯片连接用内部引线47与两个半导体芯片41,42的顶面连接。具体来说,在第3芯片连接用内部引线47的一端,形成有基本呈矩形的平坦部47a。该平坦部47a按照在上方与各半导体芯片41,42重叠的方式设置,并且分别通过凸部55,56,按照跨过各半导体芯片41,42的方式,与该芯片的顶面导通。即,象上述那样,小岛51,52在树脂封装件7内部,设置于同一平面上。由此,第1和第2半导体芯片41,42也并排设置于同一平面上,其结果是,在它们的顶面上,第3芯片连接用内部引线47可按照跨过两个半导体芯片41,42的方式连接。
另外,第1芯片放置用内部引线43相当于其中一个晶体三极管的集电极端子。第1芯片连接用内部引线44相当于基极端子。第2芯片放置用内部引线45相当于另一晶体三极管的集电极端子。第2芯片连接用内部引线46相当于基极端子。第3芯片连接用内部引线47相当于其中一个和另一个晶体三极管的发射极端子。即,在该第6实施例中,通过第3芯片连接用内部引线47,两个晶体管的发射极端子是共用的。
根据上述结构,各小岛51,52基本上呈较长矩形。由此,小岛51,52按照作为整体从平面看呈沿树脂封装件7的长度方向延伸的较长矩形,或大致较长矩形的方式形成。因此,与上述实施例相同,使两个小岛51,52的面积扩大。另外,可有效地将从半导体芯片41,42发出的热量排放到外部。并且,如果采用上述那样的无引线结构,比如,可接纳由边长约为0.9mm的方形半导体芯片形成的两个晶体三极管。
此外,由于晶体三极管的发射极端子是共用的,故可减少半导体装置S6的在外部露出的端子数量,故可降低部件的成本。另外,在上述半导体装置S6中,两个晶体三极管的共用的端子不限于发射极端子,也可为集电极端子或基极端子。
图12和图13为本发明的第7实施例的半导体装置S7的内部结构图。在该实施例的半导体装置S7中,与第6实施例的半导体装置S6相同,分别具有由两个晶体三极管形成的第1和第2半导体芯片61,62。第1和第2半导体芯片61,62按照其上下面相反的方式,设置于树脂封装件7的内部。
第1半导体芯片61放置在形成于第1芯片放置用内部引线64的一端的、沿树脂封装件7的长度方向延伸的较长矩形的小岛71上。该小岛71设置于树脂封装件7的底面附近。
在第1半导体芯片61的顶面上,按照在上方与半导体芯片61重叠的方式,设置有分别形成于第1芯片连接用内部引线65和第2芯片连接用内部引线66的一端的平坦部65a,66a。该平坦部65a,66a通过凸部73,74,分别与半导体芯片61的顶面导通。
第2半导体芯片62放置在形成于第2芯片放置用内部引线67的一端的较长矩形的小岛72上。第2芯片连接用内部引线67的小岛72设置于树脂封装件7的顶面附近。在该第7实施例中,半导体芯片62相对小岛72的放置方向与半导体芯片61的不同。即,半导体芯片61通过芯片焊接等方式,连接在小岛71的顶面上。半导体芯片62通过芯片焊接等方式,连接在小岛72的底面上。
另外,第3芯片连接用内部引线68和第4芯片连接用内部引线69与第2半导体芯片62的底面导通。即,上述平坦部68a,69a形成于芯片连接用内部引线68,69的一端。该平坦部68a,69a按照与半导体芯片62的底面重叠的方式设置,并且通过凸部75,76,分别与半导体芯片62的底面导通。
各内部引线64~68分别连接在向树脂封装件7的外部露出的外部引线29~33上。第4芯片连接用内部引线69连接在从外部引线29与外部引线31之间的侧面Sc向外部延伸的外部引线70上。
此外,第1芯片放置用内部引线64相当于其中1个晶体三极管的集电极。第1芯片连接用内部引线65相当于基极端子。第2芯片连接用内部引线66相当于发射极端子。第2芯片放置用内部引线67相当于另一个晶体三极管的集电极端子。第3芯片连接用内部引线68相当于基极端子。第4芯片连接用内部引线69相当于发射极端子。
在该第7实施例的半导体装置S7中,各半导体芯片61,62按照其上下面相反的方式,设置于树脂封装件7的内部。由此,各小岛71,72按照其整体从平面看呈沿树脂封装件7的长度方向延伸的较长矩形,或大致较长矩形的方式形成。因此,与上述第6实施例的半导体装置S6相同,使两个小岛71,72的面积扩大,可有效地将从各树脂封装件61,62发出的热量排放到外部。
还有,按照该第7实施例的半导体装置S7,小岛71设置于树脂封装件7的底面附近。该小岛72设置于树脂封装件7的顶面附近。由此,各半导体芯片61,62按照在树脂封装件7的内部上下离开的方式设置。因此,与内部引线64~69偏向一侧而设置于树脂封装件7内的结构相比,可进一步提高半导体芯片61,62的各芯片放置用内部引线64,67的放热性。
象上述那样,在第5~第7实施例的半导体装置S5~S7中,形成通过内部引线,从上下方向夹持半导体芯片的立体结构,由此,放热性优良,并且可设置多个半导体芯片。另外,设置于树脂封装件7内的半导体芯片的数量不限于上述的两个,也可具有多于该数量的半导体芯片。另外,与此相对应,从半导体装置S5~S7向外部露出的端子数量可为2个端子或7个以上的端子。
下面对上述第7实施例的半导体装置S7的制造方法进行简单说明。上述半导体装置S7的制造如图14所示,对沿一定方向延伸的较长尺寸的比如由铜形成的薄板81进行冲压加工。然后,对其进行规定的成型加工,由此,形成各内部引线64~69和外部引线29~33,70的原型部分。在此情况下,各芯片放置用内部引线64,67按照在其端部具有矩形小岛71,72的方式形成。另外,在图中,标号82表示传送孔。
接着,采用比如粘接剂,将半导体芯片61,62连接于各小岛71,72的顶面上。接着,在半导体芯片61,62的顶面上,形成比如由Ag形成的凸部73~76。
然后,沿着由向薄板81的长度方向延伸的点划线所示的折返线L1,如图15所示,以反转轴C为中心,使薄板81中的一个片83反转。由此,半导体芯片62中的凸部75,76与芯片连接用内部引线68,69中的各平坦部68a,69a连接。同样,半导体芯片61中的凸部73,74也与芯片连接用内部引线65,66的各平坦部65a,66a连接。另外,上述一个片83的尺寸按照下述方式预先设定,该方式为:在将该一个片83折返时,各半导体芯片61,62通过各凸部73~76,适当地与各平坦部65a,66a,68a,69a连接。
之后,采用规定的模具,通过热硬化树脂,将各半导体芯片61,62、各内部引线64~69进行包封,形成树脂封装件7。接着,经过对在外部露出的各外部引线29~33,70进行焊锡电镀处理、将系杆等不需要的部位去除等工序,获得图12和图13所示的半导体装置S7。
象这样,通过将薄板81的一个片83折返,可以较高的精度,将半导体芯片61,62与各内部引线65,66,68,69中的平坦部65a,66a,68a,69a连接。另外,上述方法可适合用于前述的第1~第6实施例所示的半导体装置S1~S6。
显然,本发明的范围不限于上述的实施例。比如,作为半导体芯片,不限于上述的二极管、晶体三极管。并且,作为二极管的种类,可适合采用开关二极管、肖特基势垒二极管,但是并不限于这些类型。另外,作为晶体三极管,适合采用比如MOSFET或双极晶体管,但是同样,不限于这些类型。
Claims (7)
1.一种半导体装置,其包括半导体芯片;放置该半导体芯片的芯片放置用内部引线;与所述半导体芯片的顶面直接导通的芯片连接用内部引线;将所述半导体芯片和所述各内部引线包封、并且从平面看呈矩形的树脂封装件,其特征在于:
所述芯片放置用内部引线的端部呈沿所述树脂封装件的长度方向延伸的矩形,
所述树脂封装件具有在长度方向离开的一对侧面,
对应于所述树脂封装件的所述一对侧面,所述芯片放置用内部引线具有在长度方向离开的一对边缘部,所述芯片放置用内部引线的这一对边缘部和所述半导体芯片的侧面间的距离大于所述芯片放置用内部引线的这一对边缘部和所述树脂封装件的所述一对侧面间的距离,
从平面看所述芯片放置用内部引线的面积为所述树脂封装件的底面积的50%以上。
2.如权利要求1所述的半导体装置,其特征在于,所述半导体芯片放置在沿所述树脂封装件的长度方向延伸的所述芯片放置用内部引线的中间部。
3.如权利要求1所述的半导体装置,其特征在于,所述芯片放置用内部引线的端部以外的宽度与所述端部的宽度相等。
4.一种半导体装置,其包括第1和第2半导体芯片;分别放置所述各半导体芯片的第1和第2芯片放置用内部引线;分别与所述半导体芯片的顶面导通的多个芯片连接用内部引线;将所述各半导体芯片和所述各内部引线包封、并且从平面看呈矩形的树脂封装件,其特征在于:
所述各芯片放置用内部引线的端部按照其整体从平面看呈沿所述树脂封装件的长度方向延伸的矩形,
所述芯片放置用内部引线的端部按照其整体从平面看占所述树脂封装件的整个底面积的50%以上的方式形成。
5.如权利要求4所述的半导体装置,其特征在于,所述各芯片放置用内部引线的端部设置在同一平面上,由此,所述各半导体芯片并排设置在所述树脂封装件的内部。
6.如权利要求4所述的半导体装置,其特征在于,所述芯片连接用内部引线中的任何一个端部按照跨过第1和第2半导体芯片的两个顶面的方式设置,由此,使第1和第2半导体芯片的两个顶面相互连接。
7.如权利要求4所述的半导体装置,其特征在于,所述各半导体芯片按照其上下面彼此相反的方式,设置在所述树脂封装件内部,
所述第1芯片放置用内部引线的端部设置在所述树脂封装件的底面附近,
所述第2芯片放置用内部引线的端部设置在所述树脂封装件的顶面附近。
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JP306341/1999 | 1999-10-28 | ||
JP306341/99 | 1999-10-28 | ||
JP30634199 | 1999-10-28 | ||
JP126742/2000 | 2000-04-27 | ||
JP2000126742A JP4651153B2 (ja) | 1999-10-28 | 2000-04-27 | 半導体装置 |
JP126742/00 | 2000-04-27 |
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CN1384977A CN1384977A (zh) | 2002-12-11 |
CN1198335C true CN1198335C (zh) | 2005-04-20 |
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US (1) | US6650004B1 (zh) |
EP (1) | EP1235275A4 (zh) |
JP (1) | JP4651153B2 (zh) |
KR (1) | KR100680898B1 (zh) |
CN (1) | CN1198335C (zh) |
TW (1) | TW459279B (zh) |
WO (1) | WO2001031704A1 (zh) |
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KR100917600B1 (ko) * | 2007-12-12 | 2009-09-17 | 한국전자통신연구원 | 금속-절연체 전이 소자 및 그 패키지 방법 |
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- 2000-10-02 WO PCT/JP2000/006858 patent/WO2001031704A1/ja not_active Application Discontinuation
- 2000-10-02 EP EP00963058A patent/EP1235275A4/en not_active Withdrawn
- 2000-10-02 US US10/111,567 patent/US6650004B1/en not_active Expired - Lifetime
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CN1384977A (zh) | 2002-12-11 |
JP2001196518A (ja) | 2001-07-19 |
KR20020052195A (ko) | 2002-07-02 |
WO2001031704A1 (fr) | 2001-05-03 |
EP1235275A4 (en) | 2008-02-27 |
US6650004B1 (en) | 2003-11-18 |
TW459279B (en) | 2001-10-11 |
KR100680898B1 (ko) | 2007-02-09 |
EP1235275A1 (en) | 2002-08-28 |
JP4651153B2 (ja) | 2011-03-16 |
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