GB1149604A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1149604A
GB1149604A GB11413/68A GB1141368A GB1149604A GB 1149604 A GB1149604 A GB 1149604A GB 11413/68 A GB11413/68 A GB 11413/68A GB 1141368 A GB1141368 A GB 1141368A GB 1149604 A GB1149604 A GB 1149604A
Authority
GB
United Kingdom
Prior art keywords
mould
solder
ducts
electrodes
encapsulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11413/68A
Inventor
Donald Valentine Stevenson
Leonard Thomas Alexand Beckett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB11413/68A priority Critical patent/GB1149604A/en
Priority to DE1911633A priority patent/DE1911633C3/en
Publication of GB1149604A publication Critical patent/GB1149604A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

1,149,604. Injection moulding. STANDARD TELEPHONES & CABLES Ltd. 8 March, 1968, No. 11413/68. Heading B5A. [Also in Division H1] A semi-conductor element provided with surface electrodes, a set of at least two conductors to be bonded to respective electrodes, and the solder necessary for bonding are arranged to be self-jigging and are placed in an encapsulation mould with the ends of the conductors projecting from the mould cavity. The mould is heated to melt the solder, cooled to allow bonding, and encapsulant is then introduced into the mould at a temperature lower than the melting-point of the solder. In the embodiment described a power transistor die 1, 5 is provided with gold-plated emitter and base electrodes 2, 4 on one surface and with a collector electrode 3 on the other. The solder may be applied by dip-coating-passivation will prevent solder adhering to the non-electrode areas-before the transistor is separated from a large body containing many more. A die 5 is placed between resilient fingers 9, 10 and plate 8 of each contact set, the lead frame having been punched and folded from sheet copper. (If solder pre-forms are used instead of dipping only one need be applied for the two top electrodes since surface tension together with the passivation will ensure that the solder does not short between the two electrodes). The lead frame and its associated dice are then placed in the encapsulation mould (the lower half 17 only is shown) in which the plates 8 are pressed against the roof of the upper half of the mould by splines 27 on the spigots 23, 24 and the studs 20 engage the holes 14. The holes left in the encapsulation by the spigots are bolt holes for operational use in fastening the heat sink plate 8 to support bodies. After closure of the mould air is flushed out by nitrogen through ducts 30-37, the nitrogen replaced by hydrogen or forming gas, and the mould heated to effect soldering. After soldering the cavities are flushed with nitrogen and the ducts sealed by half raising ejector posts within ducts 30-33. The soldering heat causes annealing of the leads. Encapsulant is then injected from a cylinder 38 in the top half of the mould and allowed to harden. (Gas escapes along scratches provided in the mating faces of the mould). The mould may be provided with water ducts so that it may be rapidly cooled before this stage, though the leads then would not be fully annealed. The mould cavities are sealed one side by the strip 12 of the electrode frame (in the arrangement shown this allows communication between the adjacent cavities so that the number of gas and encapsulant injection ducts is greater than necessary-variants are described for encapsulation of single devices; normally moulds are made for from two to ten devices). After the mould is opened the ejector pins are fully raised and the encapsulated devices removed (a third pin for square ejection is provided in each cavity but is not shown), encapsulant removed from between the leads in the region between strip 12 and the plate 8, and surplus metal frame trimmed off to leave the individual transistors.
GB11413/68A 1968-03-08 1968-03-08 Semiconductor devices Expired GB1149604A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB11413/68A GB1149604A (en) 1968-03-08 1968-03-08 Semiconductor devices
DE1911633A DE1911633C3 (en) 1968-03-08 1969-03-07 Method and device for contacting and encapsulating semiconductor components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB11413/68A GB1149604A (en) 1968-03-08 1968-03-08 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1149604A true GB1149604A (en) 1969-04-23

Family

ID=9985755

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11413/68A Expired GB1149604A (en) 1968-03-08 1968-03-08 Semiconductor devices

Country Status (2)

Country Link
DE (1) DE1911633C3 (en)
GB (1) GB1149604A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4645116A (en) * 1982-10-08 1987-02-24 At&T Bell Laboratories Fluxless bonding of microelectronic chips
EP1235275A1 (en) * 1999-10-28 2002-08-28 Rohm Co., Ltd. Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4039037C1 (en) * 1990-12-07 1992-02-20 Semikron Elektronik Gmbh, 8500 Nuernberg, De Mfg. electronic components using conductor frame - providing retaining strips in parallel with connecting tags and encapsulating chip, solder metal and contact strap
EP1316999A1 (en) 2001-11-28 2003-06-04 Continental ISAD Electronic Systems GmbH & Co. oHG Method and device of contacting power electronic devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4645116A (en) * 1982-10-08 1987-02-24 At&T Bell Laboratories Fluxless bonding of microelectronic chips
EP1235275A1 (en) * 1999-10-28 2002-08-28 Rohm Co., Ltd. Semiconductor device
EP1235275A4 (en) * 1999-10-28 2008-02-27 Rohm Co Ltd Semiconductor device

Also Published As

Publication number Publication date
DE1911633A1 (en) 1969-10-09
DE1911633B2 (en) 1974-09-19
DE1911633C3 (en) 1975-05-22

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