JPH02163953A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02163953A JPH02163953A JP31896288A JP31896288A JPH02163953A JP H02163953 A JPH02163953 A JP H02163953A JP 31896288 A JP31896288 A JP 31896288A JP 31896288 A JP31896288 A JP 31896288A JP H02163953 A JPH02163953 A JP H02163953A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- heat
- integrated circuit
- circuit chip
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 230000017525 heat dissipation Effects 0.000 claims abstract description 6
- 238000000465 moulding Methods 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体集積回路用樹脂封止型パッケイジの
構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a resin-sealed package for semiconductor integrated circuits.
従来の半導体装置を図について説明する。第2図は半導
体集積回路チップをリードフレームに搭載したもので樹
脂封止前の状態を示す斜視図である1図において、1は
リードフレーム、2は半導体集積回路チップ、3はこの
半導体集積回路チップ2を載置するためのダイパッド、
4はリードフレーム枠、5は外部リード、6は内部リー
ド、7はタイバー、8はモールド金型等に位置決めする
ための位置決めビン用穴、9は半導体集積回路チップ2
上に設けられた電極2aと内部リード6を接続している
金属細線である。A conventional semiconductor device will be explained with reference to the drawings. FIG. 2 is a perspective view showing a semiconductor integrated circuit chip mounted on a lead frame before resin sealing. In FIG. 1, 1 is the lead frame, 2 is the semiconductor integrated circuit chip, and 3 is this semiconductor integrated circuit. die pad for placing chip 2;
4 is a lead frame frame, 5 is an external lead, 6 is an internal lead, 7 is a tie bar, 8 is a positioning hole for positioning a mold, etc., 9 is a semiconductor integrated circuit chip 2
This is a thin metal wire that connects the electrode 2a provided above and the internal lead 6.
第3図はモールド金型の下型を示す斜視図であり、10
は前記リードフレームの位置決め用穴8を挿入すること
によって位置決めをするための位置決めピン、11は封
止樹脂が流れるためのランナー12は封止樹脂がランナ
ー10からキャビティ13に入る時の粘度等をコントロ
ールするためのゲート、13は封止樹脂を注入し所定の
形状に成形するためのキャビティ、14はモールド金型
の下型である。FIG. 3 is a perspective view showing the lower mold of the mold, and 10
11 is a positioning pin for positioning by inserting the positioning hole 8 of the lead frame, and 11 is a runner 12 through which the sealing resin flows, the viscosity of the sealing resin when it enters the cavity 13 from the runner 10. A gate for control, 13 a cavity for injecting sealing resin and molding into a predetermined shape, and 14 a lower mold of the mold.
第8図は樹脂封止後の半導体集積回路用パッケイジを示
す斜視図であり、15は封止樹脂である。FIG. 8 is a perspective view showing the semiconductor integrated circuit package after being sealed with resin, and 15 is the sealing resin.
第9図は第8図の状態から最終形状に加工した後の状態
を示す半導体集積回路パッケイジの斜視図である。FIG. 9 is a perspective view of the semiconductor integrated circuit package after it has been processed into a final shape from the state shown in FIG. 8.
第10図は第9図のX−X線の断面図である。FIG. 10 is a sectional view taken along the line X--X in FIG. 9.
次に前記半導体集積回路パッケージの製造工程について
説明する。まず第2図に示すように、半導体集積回路チ
ップ2をリードフレーム1のグイバッド3上に載置固定
した後、金属細線9によりチップ2上に設けられた電極
2aと内部リード6とを結線する。この後に第3図に示
したモールド金型の下型14に載置され上型(図示せず
)とクランプした後、ランナー11.ゲート12.キャ
ビティ13の順に封止樹脂15を注入して樹脂封止する
。その結果第8図に示す半導体集積回路パッケイジがで
きる。Next, the manufacturing process of the semiconductor integrated circuit package will be explained. First, as shown in FIG. 2, after placing and fixing the semiconductor integrated circuit chip 2 on the Guibad 3 of the lead frame 1, the electrodes 2a provided on the chip 2 and the internal leads 6 are connected using thin metal wires 9. . Thereafter, the runner 11 is placed on the lower die 14 of the mold shown in FIG. 3 and clamped with the upper die (not shown). Gate 12. A sealing resin 15 is injected into the cavities 13 in order to seal them with the resin. As a result, a semiconductor integrated circuit package shown in FIG. 8 is produced.
さらに必要な外装処理を施した後に、第9図。FIG. 9 is shown after further necessary exterior treatment.
第1O図に示す様に加工して完了する。Processing is completed as shown in Figure 1O.
従来の半導体集積回路パッケイジは以上の様に1種類の
リードフレームを樹脂封止することによって精成される
ので、内部に放熱用のヒートシンクを組込むことが極め
て困難で、高消費電力が要求される半導体パッケイジと
しては不適であった。Conventional semiconductor integrated circuit packages are refined by resin-sealing one type of lead frame as described above, so it is extremely difficult to incorporate a heat sink for heat dissipation inside, and high power consumption is required. It was unsuitable for use as a semiconductor package.
この発明は上記のような問題点を解消するためになされ
たもので、内部に放熱用のヒートシンクを組込むことが
出来る高消費電力用のパッケイジを得ることを目的とす
る。This invention was made to solve the above-mentioned problems, and aims to provide a package for high power consumption that can incorporate a heat sink for heat radiation inside.
この発明に係る半導体装置は、半導体集積回路チップを
搭載したフレームと、前記集積回路チップの放熱の役割
を果たすヒートシンク用フレームとを備え、前記フレー
ムと前記ヒートシンク用フレームとが一部分重ね合わさ
れた状態で樹脂封止成形されたものである。A semiconductor device according to the present invention includes a frame on which a semiconductor integrated circuit chip is mounted, and a heat sink frame that plays a role of dissipating heat from the integrated circuit chip, and the frame and the heat sink frame are partially overlapped. It is molded with resin sealing.
この発明による半導体装置は、複数のリードフレームを
同時に封止成形することによって、ヒートシンクを内包
させ、これによって放熱効果を高めたものである。The semiconductor device according to the present invention includes a heat sink by sealing and molding a plurality of lead frames at the same time, thereby increasing the heat dissipation effect.
以下、この発明の一実施例を図について説明する。第1
図は本実施例の半導体装置に用いられるヒートシンク用
のリードフレームを示す斜視図である0図において、1
6はヒートシンク用リードフレーム、17はヒートシン
ク用フレーム、18は枠部、19はモールド金型に位置
決めするための位1決めビン用穴である。第2図は第1
図に示したヒートシンク用のリードフレームと重ねて樹
脂封止成形される半導体S積回路チップを搭載したリー
ドフレームを示す斜視図であり、第3図はモールド金型
の下型を示す斜視図である1図において、1〜14は従
来例において説明したものと同様でありその説明を省略
する。An embodiment of the present invention will be described below with reference to the drawings. 1st
1 is a perspective view of a lead frame for a heat sink used in the semiconductor device of this embodiment.
6 is a lead frame for a heat sink, 17 is a frame for a heat sink, 18 is a frame portion, and 19 is a hole for a positioning bin for positioning in a mold. Figure 2 is the first
FIG. 3 is a perspective view showing a lead frame equipped with a semiconductor S integrated circuit chip that is resin-sealed and molded overlapping the lead frame for the heat sink shown in the figure, and FIG. 3 is a perspective view showing the lower die of the molding die. In one figure, 1 to 14 are the same as those explained in the conventional example, and the explanation thereof will be omitted.
本実施例において、半導体集積回路チップ2を搭載した
リードフレーム1の枠部4と、ヒートシンク用リードフ
レーム16の枠部18とを同一の大きさく寸法)に形成
する。そして第3図に示すモールド金型の下型14に設
けた位置決めピンIOにヒートシンク用フレーム1の位
置決めビン用穴19及びリードフレーム1の位1決めビ
ン用穴8をそれぞれ挿入して位置決めを行う、その後モ
ールド下型14のキャビティ13に封止樹脂15を挿入
して外装処理を施し第4図に示す半導体装置を得る。第
5図は第4図のV−V線断面図を示したもので、半導体
装置内にヒートシンク用フレーム17を簡易な方法で組
み込むことができる。In this embodiment, the frame portion 4 of the lead frame 1 on which the semiconductor integrated circuit chip 2 is mounted and the frame portion 18 of the heat sink lead frame 16 are formed to have the same size. Then, positioning is performed by inserting the positioning pin hole 19 of the heat sink frame 1 and the positioning pin hole 8 of the lead frame 1 into the positioning pin IO provided on the lower die 14 of the mold die shown in FIG. 3. Thereafter, a sealing resin 15 is inserted into the cavity 13 of the lower mold 14 and an exterior treatment is performed to obtain the semiconductor device shown in FIG. 4. FIG. 5 shows a sectional view taken along the line V-V in FIG. 4, and the heat sink frame 17 can be incorporated into the semiconductor device by a simple method.
さらに、自由な形状、寸法、材質のヒートシンク用フレ
ームをパッケイジ内に内包することができ、高消費電力
用の半導体パッケイジ用として広く利用できる。Furthermore, a heat sink frame of any shape, size, and material can be included in the package, and can be widely used for semiconductor packages for high power consumption.
即ち、第6図に示すようにヒートシンク用フレーム20
の一部を半導体パッケイジの外部に表出させてもよい、
また第7図に示すように半導体集積回路チップ1側にヒ
ートシンク用フレーム21を設置してもよい、さらにヒ
ートシンク用フレームの放熱面積を高める形状にし、高
熱伝導性の材料を使用すれば効果が高まる。That is, as shown in FIG. 6, the heat sink frame 20
A part of the semiconductor package may be exposed outside the semiconductor package.
Furthermore, as shown in FIG. 7, a heat sink frame 21 may be installed on the semiconductor integrated circuit chip 1 side.Furthermore, the effect will be enhanced if the heat sink frame is shaped to increase the heat dissipation area and is made of a material with high thermal conductivity. .
以上のようにこの発明によれば複数のリードフレームを
同時に樹脂封止成形することによってヒートシンクを内
包させたため、放熱効果の高いパッケイジを得ることが
出来る。As described above, according to the present invention, a plurality of lead frames are encapsulated with a heat sink by resin sealing molding at the same time, so that a package with high heat dissipation effect can be obtained.
第1図は本発明の一実施例による半導体装置に用いられ
るし−トシンク用リードフレームの斜視図、第2図は半
導体集積回路チップを搭載したリードフレームを示す斜
視図、第3図は樹脂封止成形用金型の下型を示す斜視図
、第4図は上記実施例による半導体装置の斜視図、第5
図は第4図■−v線断面図、第6図は本発明の他の実施
例を示す半導体装置の断面図、第7図は他の実施例の半
導体装置を示す断面図、第8図は従来の半導体装置のリ
ードフレーム状態を示す斜視図、第9図は従来の半導体
装置の斜視図、第1θ図は第9図のX−X線断面図であ
る。
図において、1はリードフレーム、2は半導体集積回路
チップ、3はグイパッド、4はリードフレーム枠、5は
外部リード、6は内部リード、7はタイバー、8.19
は位置決めビン用穴、9は金属細線、IOは位置決めビ
ン、11はランナー、12はゲート、13はキャビティ
、14はモールド金型の下型、15は封止樹脂、16は
ヒートシンク用リードフレーム、17.20.21はヒ
ートシンク用フレーム、18は枠部を示す。
なお、図中同一符号は同−又は相当部分を示す。
第2図
1 リートつし−ム
2も眸4場貢計−〇
一1μb
39゛イrPJ”
第1図
A
16二ヒー1シー7困り−F′7L−617′ヒー1践
り用フし−b
j9:4詐
19°イゴ!、J5、;畑ビ>E01六第3図
第4図
第6図
茄
ヒート沁り田7し−ム
第5図
1″′?
し−ト渉7田7し一ム・
第7図
ヒート沁Σ’71!1つに−ム
第8図
第9図FIG. 1 is a perspective view of a lead frame for a sink used in a semiconductor device according to an embodiment of the present invention, FIG. 2 is a perspective view of a lead frame on which a semiconductor integrated circuit chip is mounted, and FIG. 3 is a resin sealing lead frame. FIG. 4 is a perspective view showing the lower die of the molding die, FIG. 4 is a perspective view of the semiconductor device according to the above embodiment, and FIG.
The figures are a cross-sectional view taken along line 4--v, FIG. 6 is a cross-sectional view of a semiconductor device showing another embodiment of the present invention, FIG. 7 is a cross-sectional view showing a semiconductor device of another embodiment, and FIG. 9 is a perspective view showing the state of a lead frame of a conventional semiconductor device, FIG. 9 is a perspective view of the conventional semiconductor device, and FIG. 1θ is a sectional view taken along the line X--X in FIG. In the figure, 1 is a lead frame, 2 is a semiconductor integrated circuit chip, 3 is a guide pad, 4 is a lead frame frame, 5 is an external lead, 6 is an internal lead, 7 is a tie bar, 8.19
is a hole for a positioning bottle, 9 is a thin metal wire, IO is a positioning bottle, 11 is a runner, 12 is a gate, 13 is a cavity, 14 is a lower mold of a mold, 15 is a sealing resin, 16 is a lead frame for a heat sink, 17, 20, and 21 are heat sink frames, and 18 is a frame portion. Note that the same reference numerals in the figures indicate the same or equivalent parts. Fig. 2 1 Reet Tsushima 2 also eye 4 field contribution total - 〇1 1μb 39゛irPJ'' -b j9: 4 fraud 19° Igo!, J5,; Hata bi > E016 Figure 3 Figure 4 Figure 6 Eggplant heat 7 Shi -mu Figure 5 1'''? Figure 7 Heat Σ'71! One Figure 8 Figure 9
Claims (1)
回路チップの放熱の役割を果たすヒートシンク用フレー
ムとを備え、前記フレームと前記ヒートシンク用フレー
ムとが一部分重ね合わされた状態で樹脂封止成形された
半導体装置。A semiconductor device comprising a frame on which a semiconductor integrated circuit chip is mounted, and a heat sink frame that plays a role of heat dissipation for the integrated circuit chip, the frame and the heat sink frame being partially overlapped and molded with resin sealing. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63318962A JP2585771B2 (en) | 1988-12-16 | 1988-12-16 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63318962A JP2585771B2 (en) | 1988-12-16 | 1988-12-16 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02163953A true JPH02163953A (en) | 1990-06-25 |
JP2585771B2 JP2585771B2 (en) | 1997-02-26 |
Family
ID=18104938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63318962A Expired - Fee Related JP2585771B2 (en) | 1988-12-16 | 1988-12-16 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2585771B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04312963A (en) * | 1991-02-21 | 1992-11-04 | Mitsui Petrochem Ind Ltd | Semiconductor device improved for moisture resistance and manufacture thereof |
US5384286A (en) * | 1991-08-16 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Process for encapsulating a semiconductor chip, leadframe and heatsink |
US6048754A (en) * | 1990-07-21 | 2000-04-11 | Mitsui Chemicals, Inc. | Method of manufacturing a semiconductor device with an airtight space formed internally within a hollow package |
JP2017134022A (en) * | 2016-01-29 | 2017-08-03 | 旭化成エレクトロニクス株式会社 | Electric current sensor and manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4878763U (en) * | 1971-12-27 | 1973-09-27 | ||
JPS5040549U (en) * | 1973-08-07 | 1975-04-24 |
-
1988
- 1988-12-16 JP JP63318962A patent/JP2585771B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4878763U (en) * | 1971-12-27 | 1973-09-27 | ||
JPS5040549U (en) * | 1973-08-07 | 1975-04-24 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6048754A (en) * | 1990-07-21 | 2000-04-11 | Mitsui Chemicals, Inc. | Method of manufacturing a semiconductor device with an airtight space formed internally within a hollow package |
JPH04312963A (en) * | 1991-02-21 | 1992-11-04 | Mitsui Petrochem Ind Ltd | Semiconductor device improved for moisture resistance and manufacture thereof |
US5384286A (en) * | 1991-08-16 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Process for encapsulating a semiconductor chip, leadframe and heatsink |
JP2017134022A (en) * | 2016-01-29 | 2017-08-03 | 旭化成エレクトロニクス株式会社 | Electric current sensor and manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JP2585771B2 (en) | 1997-02-26 |
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