CN1177368C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1177368C CN1177368C CNB011255811A CN01125581A CN1177368C CN 1177368 C CN1177368 C CN 1177368C CN B011255811 A CNB011255811 A CN B011255811A CN 01125581 A CN01125581 A CN 01125581A CN 1177368 C CN1177368 C CN 1177368C
- Authority
- CN
- China
- Prior art keywords
- conductor layer
- forms
- capacity cell
- semiconductor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 125
- 239000010408 film Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims description 179
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 238000003475 lamination Methods 0.000 claims description 18
- 230000033228 biological regulation Effects 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 24
- 230000001939 inductive effect Effects 0.000 abstract description 6
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 42
- 238000000034 method Methods 0.000 description 34
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- 239000000203 mixture Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 16
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 229920001721 polyimide Polymers 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001802 infusion Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- -1 scolder Chemical compound 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 241000345998 Calamus manan Species 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012950 rattan cane Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000243783A JP3540729B2 (ja) | 2000-08-11 | 2000-08-11 | 半導体装置および半導体装置の製造方法 |
JP2000243765A JP3540728B2 (ja) | 2000-08-11 | 2000-08-11 | 半導体装置および半導体装置の製造方法 |
JP243783/2000 | 2000-08-11 | ||
JP243765/2000 | 2000-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1338779A CN1338779A (zh) | 2002-03-06 |
CN1177368C true CN1177368C (zh) | 2004-11-24 |
Family
ID=26597796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011255811A Expired - Lifetime CN1177368C (zh) | 2000-08-11 | 2001-08-13 | 半导体器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6847066B2 (zh) |
EP (1) | EP1182703B1 (zh) |
KR (1) | KR100443954B1 (zh) |
CN (1) | CN1177368C (zh) |
HK (1) | HK1045023A1 (zh) |
SG (1) | SG99939A1 (zh) |
TW (1) | TW515015B (zh) |
Families Citing this family (92)
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US6869870B2 (en) * | 1998-12-21 | 2005-03-22 | Megic Corporation | High performance system-on-chip discrete components using post passivation process |
US6495442B1 (en) * | 2000-10-18 | 2002-12-17 | Magic Corporation | Post passivation interconnection schemes on top of the IC chips |
US7531417B2 (en) | 1998-12-21 | 2009-05-12 | Megica Corporation | High performance system-on-chip passive device using post passivation process |
US7381642B2 (en) * | 2004-09-23 | 2008-06-03 | Megica Corporation | Top layers of metal for integrated circuits |
US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
US8178435B2 (en) * | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
US8421158B2 (en) * | 1998-12-21 | 2013-04-16 | Megica Corporation | Chip structure with a passive device and method for forming the same |
US7405149B1 (en) * | 1998-12-21 | 2008-07-29 | Megica Corporation | Post passivation method for semiconductor chip or wafer |
US6303423B1 (en) * | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
JP3465617B2 (ja) | 1999-02-15 | 2003-11-10 | カシオ計算機株式会社 | 半導体装置 |
US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US7372161B2 (en) * | 2000-10-18 | 2008-05-13 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US7498196B2 (en) * | 2001-03-30 | 2009-03-03 | Megica Corporation | Structure and manufacturing method of chip scale package |
JP3939504B2 (ja) * | 2001-04-17 | 2007-07-04 | カシオ計算機株式会社 | 半導体装置並びにその製造方法および実装構造 |
US6744114B2 (en) * | 2001-08-29 | 2004-06-01 | Honeywell International Inc. | Package with integrated inductor and/or capacitor |
US6759275B1 (en) | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
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TW584950B (en) | 2001-12-31 | 2004-04-21 | Megic Corp | Chip packaging structure and process thereof |
TW503496B (en) * | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
DE10203397B4 (de) * | 2002-01-29 | 2007-04-19 | Siemens Ag | Chip-Size-Package mit integriertem passiven Bauelement |
TW577160B (en) * | 2002-02-04 | 2004-02-21 | Casio Computer Co Ltd | Semiconductor device and manufacturing method thereof |
JP3829325B2 (ja) * | 2002-02-07 | 2006-10-04 | 日本電気株式会社 | 半導体素子およびその製造方法並びに半導体装置の製造方法 |
JP3616605B2 (ja) * | 2002-04-03 | 2005-02-02 | 沖電気工業株式会社 | 半導体装置 |
EP1500136A1 (en) * | 2002-04-11 | 2005-01-26 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing same |
US7414858B2 (en) * | 2002-04-11 | 2008-08-19 | Koninklijke Philips Electronics N.V. | Method of manufacturing an electronic device |
DE10219116A1 (de) * | 2002-04-29 | 2003-11-13 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Verbindungslagen sowie zugehörige Herstellungsverfahren |
JP3871609B2 (ja) * | 2002-05-27 | 2007-01-24 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
AU2003253425C1 (en) * | 2002-08-09 | 2006-06-15 | Casio Computer Co., Ltd. | Semiconductor device and method of manufacturing the same |
EP1454356A1 (en) | 2002-11-21 | 2004-09-08 | Casio Computer Co., Ltd. | High frequency signal transmission structure |
JP3808030B2 (ja) * | 2002-11-28 | 2006-08-09 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US7319277B2 (en) * | 2003-05-08 | 2008-01-15 | Megica Corporation | Chip structure with redistribution traces |
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JP2005005409A (ja) * | 2003-06-11 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 半導体装置 |
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- 2001-08-09 KR KR10-2001-0047844A patent/KR100443954B1/ko active IP Right Grant
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EP1182703B1 (en) | 2019-01-23 |
HK1045023A1 (en) | 2002-11-08 |
US6847066B2 (en) | 2005-01-25 |
TW515015B (en) | 2002-12-21 |
US20020017730A1 (en) | 2002-02-14 |
CN1338779A (zh) | 2002-03-06 |
EP1182703A3 (en) | 2005-09-28 |
EP1182703A2 (en) | 2002-02-27 |
KR100443954B1 (ko) | 2004-08-11 |
KR20020014697A (ko) | 2002-02-25 |
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