CN1665023A - 树脂密封半导体器件和引线框架、及其制造方法 - Google Patents

树脂密封半导体器件和引线框架、及其制造方法 Download PDF

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Publication number
CN1665023A
CN1665023A CN2005100529995A CN200510052999A CN1665023A CN 1665023 A CN1665023 A CN 1665023A CN 2005100529995 A CN2005100529995 A CN 2005100529995A CN 200510052999 A CN200510052999 A CN 200510052999A CN 1665023 A CN1665023 A CN 1665023A
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China
Prior art keywords
inner lead
resin
semiconductor element
zone
lead frame
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Pending
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CN2005100529995A
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English (en)
Inventor
福田敏行
南尾匡纪
藤本博昭
佐原隆一
伊东健一
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN1665023A publication Critical patent/CN1665023A/zh
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Abstract

提供一种引线框架，该引线框架包括：设置在平面上的多个第一外部端子部分5；由各自第一外部端子部分的背表面形成的并被设置成以便于包围在内部引线部分之内的区域的内部引线部分6；和由位于各自内部引线部分之外的凸面部分的最高表面形成的第二外部端子部分7；经由凸点3倒装键合到所述内部引线部分的半导体元件2；以及密封半导体元件和所述内部引线部分周围的密封树脂4。在密封树脂的下表面区域中，沿着该区域的外围设置第一外部端子部分，而将第二外部端子部分暴露在密封树脂的上表面上。按照栅格图形在第一外部端子部分之内的区域中设置多个用于电连接的端子8，并将其暴露在密封树脂的下表面上。可以合并多个半导体元件或线圈与电阻器，并且可以叠置另外的半导体器件。

Description

树脂密封半导体器件和引线框架、及其制造方法
发明背景
1、发明领域
本发明涉及一种树脂密封半导体器件，其中，将半导体元件键合在引线框架的内引线上，且其周围由树脂密封，且该树脂密封半导体器件允许在垂直方向上叠置其它半导体器件或诸如电阻器的功能部件。
2、现有技术
近些年来，为了应对小型化和高密度的电子设备，需要诸如树脂密封半导体器件的半导体部件的高密度封装，并且因此已经开发出更小更薄的半导体部件。例如，封装类型从其中将外部端子设置在半导体器件的外围上的外围封装转变为其中按照格栅图形将外部端子设置在半导体器件的安装表面上的分区阵列封装。而且，已经开发出小而薄且还具有大量管脚的半导体器件。
下文中，将说明一种常规树脂密封半导体器件。近些年来，实际上已经开发出一种其中一侧是用模子制成的被称之为“QFN”(四方形平坦无引线封装)的树脂密封半导体器件作为小而薄的树脂密封半导体器件(例如，参见JP2001-77277A)。
最初，作为常规树脂密封半导体器件说明一种其中将管芯焊盘暴露在封装体底表面上的QFN型树脂密封半导体器件。图18A至18D举例说明常规的QFN型树脂密封半导体器件；图18B是平面图，而图18A是沿图18B中的线I-I的横截面图。此外，图18C和18D举例说明最常用的QFP(四方形平坦封装)型树脂密封半导体器件，其中外部端子从封装树脂内朝向其外围突出，图18C是横截面图，而图18D是平面图。
如图18A和18B中所示，常规QFN型树脂密封半导体器件具有一种结构，在该结构中，将半导体元件52键合在引线框架的管芯焊盘51上，并且这样布置多个内部引线部分53以至于其端部与管芯焊盘51相对。半导体元件52的电极经由细金属布线54与内部引线部分53的表面电连接。半导体元件52、管芯焊盘51、内部引线部分53和细金属布线54的周围由密封树脂55密封。内部引线部分53的底表面和外部侧表面分别暴露在来自密封树脂55的封装体的底表面和侧表面上，以便于被布置为外部端子56。
此外，如图18C和18D所示，常规QFP型树脂密封半导体器件也具有一种结构，在该结构中，将半导体元件52键合在引线框架的管芯焊盘57上，并且这样布置多个内部引线部分58以至于其端部与管芯焊盘57相对。半导体元件52的电极经由细金属布线59与内部引线部分58的表面电连接。半导体元件52、管芯焊盘57、内部引线部分58和细金属布线59的周围由密封树脂60密封。内部引线部分58的尾端从密封树脂60的侧表面中突出，以便于被布置为封装体的外部侧表面上的外部端子61。
图中未示出的在常规树脂密封半导体器件中使用的引线框架包括：基本上布置在框架的开口区域(opening region)中央的管芯焊盘51、用于支撑管芯焊盘51的悬挂引线部分62，它们中的每一个的一端连接到管芯焊盘51的各拐角，而另一端连接到引线框架，以及多个布置成以便于其端部与管芯焊盘51的相应边缘相对的内部引线部分53。
在尝试使具有这些结构的常规树脂密封半导体器件变得更小并且具有更高的密度时，诸如QFN的其中在半导体器件的外围上布置外部端子的外围型半导体器件已经由诸如BGA(球栅阵列)的其中按照栅格图形在半导体器件的底表面上布置外部端子的具有较高密度的分区阵列型半导体器件所替代。然而，由于要被安装的基板的线和间隔的工艺(布线图形设计)的限制和由通过利用焊锡膏的软熔工艺的安装方法所施加的限制，允许将这些半导体器件安装在基板上的外部端子的最小可允许间距在诸如QFN的外围型半导体器件的情况下为0.4mm，而在诸如BGA的分区阵列型半导体器件的情况下为0.65mm。因此，树脂密封半导体器件的进一步小型化和高密度封装变得很难。
此外，需要半导体器件与由移动电话等所代表的设备的较高功能性相匹配。例如，在移动电话的情况下，已经使用在应用中不小于1GHz的频带来实现稳定的通信或当前的移动通信(移动电话、PDA等)的工业领域中的大容量数据通信。将来，会日益增加对高频带信号通信的需求。
发明内容
本发明的目的是提供一种树脂密封半导体器件及其制造方法，在该半导体器件中，可以将多个半导体元件或线圈与用于支持半导体元件功能的电阻器结合，且允许叠置其它的半导体器件。
根据本发明的树脂密封半导体器件包括：引线框架，包括多个设置在平面上的第一外部端子部分、由各个第一外部端子部分的背表面形成的且按照固定间隔布置以便于包围内部引线部分内侧的区域的内部引线部分、以及由位于各个内部引线部分外部的凸面部分的最高表面形成的第二外部端子部分；半导体元件，其连接焊盘经由凸点被倒装键合到内部引线部分；以及密封树脂，其至少密封包括内部引线部分和经由凸点的连接部分的半导体元件的周围的一部分。在密封树脂的下表面区域中沿着该区域外围布置第一外部端子部分，而第二外部端子部分暴露在密封树脂的上表面上。此外，将多个用于电连接的端子按照栅格图形设置在第一外部端子部分内部的区域中并暴露在密封树脂的下表面上。
根据本发明的引线框架，包括：设置在平面上的多个第一外部端子部分；内部引线部分，由各自第一外部端子部分的背表面形成且按照固定间隔布置以便于包围内部引线部分内部的区域；和第二外部端子部分，由位于各自内部引线部分外部的凸面部分的最高表面形成。按照栅格图形在内部引线部分内部的区域中设置多个用于电连接的端子。
根据本发明的制造树脂密封半导体器件的方法，包括：准备具有上述结构的引线框架；在第一半导体元件的电极上形成导电凸点；将第一半导体元件的电极经由导电凸点分别与内部引线部分的预定位置以及用于电连接的端子连接；使用树脂密封内部引线部分、第一半导体元件和导电凸点；将密封结构与框架分离。
根据本发明的制造引线框架的方法是一种制造具有上述结构的引线框架的方法。该方法包括：准备一个引线框架，在该引线框架中将要彼此独立的端子是被连接起来的；在所述引线框架上形成电镀层；给所述引线框架的一侧上的表面提供保护片，在该引线框架中将要彼此独立的端子是被连接起来的；分离将要彼此独立的端子之间的连接部分；在所布置的内部引线部分内部的区域中提供多个用于电连接的端子。
附图的简要描述
图1A是图解说明根据实施例1的树脂密封半导体器件的平面图，图1B是其后视图，而图1C是其沿图1A中的线A-A的横截面图；
图2A是用于图解说明树脂密封半导体器件的部分制造工艺的引线框架的平面图，图2B是由该工艺制造的树脂密封半导体器件的后视图，而图2C至2F是该工艺的各步骤中的横截面图；
图3是图解说明用于树脂密封半导体器件的引线框架的一部分的平面图；
图4A至4E是示出在内部引线部分附近的引线框架形状的实例的横截面图；
图5A是图解说明其中叠置半导体元件的示例性树脂密封半导体器件的平面图，图5B是其后视图，而图5C是其沿图5A中的线C-C的横截面图；
图6A至6D图解说明树脂密封半导体器件的部分制造工艺；图6A和6B为图解说明该工艺各个步骤的透视图，图6C是图6A的一部分的放大透视图，而图6D是图6C的一部分的放大侧视图；
图7A是图解说明根据实施例2的树脂密封半导体器件的平面图，图7B是其后视图，而图7C是其沿图7A中的线D-D的横截面图；
图8A是用于图解说明树脂密封半导体器件的部分制造工艺的引线框架的平面图，图8B是由该工艺制造的树脂密封半导体器件的后视图，而图8C至8G是该工艺的各步骤中的横截面图；
图9A和9B是分别详细图解说明图8F的步骤的横截面图和平面图；
图10A和10B是分别示出图7A至7C中示出的树脂密封半导体器件的封装体实例的横截面图和后视图；
图11A是图解说明根据实施例3的树脂密封半导体器件的平面图，图11B是其后视图，而图11C是其沿图11A中的线F-F的横截面图；
图12A是用于图解说明树脂密封半导体器件的部分制造工艺的引线框架的平面图，图12B是由该工艺制造的树脂密封半导体器件的后视图，而图12C至12F是该工艺的各步骤中的横截面图；
图13A是图解说明根据实施例4的树脂密封半导体器件的平面图，图13B是其后视图，而图13C是其沿图13A中的线G-G的横截面图；
图14是示出频率(GHz)与感应器Q值之间的关系的实例的图；
图15是图解说明用来制造根据实施例4的树脂密封半导体器件的引线框架的平面图；
图16A至16F是图解说明树脂密封半导体器件的部分制造工艺的横截面图；
图17A和17B是分别图解说明根据实施例5的树脂密封半导体器件的横截面图和平面图；
图18A和18D图解说明常规的树脂密封半导体器件；图18A和18C是横截面图而图18B和18D是后视图。
发明的详细说明
根据本发明的树脂密封半导体器件，能够在其中在半导体器件的外围上布置外部端子的外围型树脂密封半导体器件的上、下表面上形成外部端子，在该半导体器件中提供线圈或电阻器，以及自由地叠置具有不同数量管脚的半导体器件等。
在根据本发明的树脂密封半导体器件中，每一个用于电连接的端子可以用于电源GND且具有比其它端子更大的面积。选择地，可以提供两个用于电连接的端子，它们分别形成螺旋线圈的起点和终点。选择地，可以提供两个用于电连接的端子，且将具有高介电常数的树脂夹在其间。
半导体元件在倒装键合区域之内的区域中可以具有多个电极焊盘，且还可以将比内部引线部分的内侧端之内的区域更小且比引线框架的内部引线部分更薄(thinner)的第二半导体元件倒装键合到该电极焊盘。
可以将第三半导体元件的背表面通过粘合剂粘合到第二外部端子部分，且可以在内部引线部分外部的区域中设置多个内部引线柱，该内部引线柱经由细金属布线与第三半导体元件的电极焊盘电连接，并具有它们的暴露于密封树脂的下表面区域中的相对表面。
在根据本发明的引线框架中，例如，可以在内部引线部分内部的区域中提供螺旋布线，且用于电连接的端子可以分别形成螺旋布线的起点和终点。选择地，可以提供两个用于电连接的端子，且在其间夹有具有高介电常数的树脂。此外，具有上述结构的引线框架还可以包括用于支撑其它元件的绝缘保护片。
根据本发明的树脂密封半导体器件的制造方法还可以包括：准备第二半导体元件，该第二半导体元件比内部引线部分的内侧端之内的区域更小且比该引线框架的内部引线部分更薄；在用于经由第一半导体元件中的导电凸点来进行倒装键合的区域之内的区域中形成多个电极焊盘；当第一半导体元件处于晶圆状态时，将第二半导体元件连接到在内侧区域中形成的电极焊盘；并将晶圆分成第一半导体元件的单元。在将第一半导体元件的电极与内部引线部分的预定位置以及用于电连接的端子连接的步骤中，提供第一半导体元件，将第二半导体元件连接到该第一半导体元件。
根据本发明的引线框架的制造方法可以包括：提供用于电连接的两个端子；在两个端子之间注入具有高介电常数的树脂；和固化树脂。选择地，可以在其中要安装半导体器件的区域的外围上按照固定间隔设置内部引线部分，可以在内部引线之内的区域中设置具有两个端子的电阻器，电阻器的两个端子中的每一个都具有将成为上表面的区域，该上表面足够大以便于允许凸点键合。
下面，将参考附图来详细说明根据本发明各实施例的树脂密封半导体器件和其中所使用的引线框架。
(实施例1)
图1A是图解说明根据实施例1的树脂密封半导体器件的平面图，图1B是其后视图，而图1C是其沿图1A中的线A-A的横截面图。
如图1C中所示，树脂密封半导体器件具有一种结构，在该结构中，通过倒装键合经由金属凸点3在引线框架1的上表面上安装第一半导体元件2，并且采用密封树脂4密封位于引线框架1与第一半导体元件2之间的连接部分。
引线框架1包括在图1B中示出的平面上设置的多个第一外部端子部分5和由于第一外部端子部分5相对的表面形成的内部引线部分6。此外，如图1A和1C中所示，第二外部端子部分7由位于各自内部引线部分6的一部分中的凸面部分的最高表面形成。按照固定间隔设置内部引线部分6以便于包围内部引线部分之内的区域。引线框架1还包括设置在内部引线部分6之内的区域中的多个用于电连接的端子8。从密封树脂4中暴露第一外部端子部分5、第二外部端子部分7和端子8。
这里，在半导体器件中，最好传送高频电信号的距离较短。当半导体元件2的设计版图允许端子8设置在允许更直接地把信号传输到其的位置处时，可以获得优选的电气特性。还根据半导体元件2的设计版图，确定电源地。
图2A至2F是图解说明图1A至1C中示出的树脂密封半导体器件的部分制造工艺的视图。图2A是引线框架1的平面图。图2B是由该工艺制造的树脂密封半导体器件的后视图。图2C至2F是沿图2B中的线B-B的横截面图，图2B图解说明该工艺的各个步骤。
首先，如图2C中所示，准备引线框架1。由引线框架支撑片1a支撑引线框架1的下表面。然后，如图2D中所示，在引线框架1上安装半导体元件2。换句话说，将半导体元件2的电极焊盘2a经由凸点3与内部引线部分6连接。
然后，如图2E中所示，采用树脂密封来密封半导体元件2和引线框架1的内部引线部分6。更为具体地，将把半导体元件2键合到其的引线框架1放置在树脂密封模具9a和9b之间，然后用密封树脂填充该树脂密封模具。虽然在附图中仅示出一个半导体器件，实际上，可以使用树脂来成批地密封按照栅格图形被设置成彼此相邻的树脂密封半导体器件。此时，可以密封片10在引线框架与密封模具9b之间设置密封片10。将引线框架的第一外部端子部分5、第二外部端子部分7和端子8暴露在树脂的表面上。这里，例如，使用热固性环氧树脂作为密封树脂，并且将树脂模制温度设置在150至250℃的范围内。
在密封之后，如图2F所示，沿着分割线来分割相邻的树脂密封半导体器件。在该步骤中，当密封树脂半导体器件具有不大于0.2mm的总厚度时，可以采用激光切割方法来分割它们。另一方面，当密封树脂半导体器件具有大于0.2mm的总厚度时，可以用锯来分割它们，因为当使用激光切割方法时，依据分割时间(指标)和质量激光分割表面上的熔融金属的渣滓的处理成为一个问题。
在密封中，如图2E所示，当为引线框架1的一侧上的表面提供密封片10时，该密封片10与在执行密封时将成为第二外部端子部分7的部分接触。此外，由于引线框架1略微突入到密封片10内，所以可以形成支座(standoff)。例如，当密封片10具有30μm的厚度时，形成2μm至10μm的支座。然而，即使当不使用密封片10时，引线框架1的材料的厚度等于树脂密封半导体器件的总厚度，并且因此可以稳定地提供树脂密封模具9a和9b的压力。因此，通过利用常规化学的工艺可以充分地消除树脂毛刺。
图3是图解说明在该实施例中使用的示例性引线框架的一部分的平面图。引线框架11包括在其较短方向上的两端上的多个定位孔(圆形孔)12和定位孔(椭圆形孔)13。要由树脂密封的区域14表示在定位孔12和13的内部，而在要由树脂密封的区域14内按照栅格图形布置多个用于安装元件的区域15。所要布置的用于安装元件的区域15的数量取决于半导体器件的尺寸。此外，外部端子的数量(管脚的数量)和用于安装元件的区域15内的设计根据要被安装的半导体元件的输出和输入端子等的尺寸、数量来变化。
这里，例如，该实施例的引线框架11在较短方向上具有30至80mm的长度而在纵向方向上具有50至260mm的长度，并具有0.1至0.4mm的厚度。此外，引线框架11是由Fe-Ni材料、Cu合金或其它材料制成的。要被布置的树脂密封半导体器件的尺寸通常为3.0×3.0mm至20.0×20.0mm。
作为该实施例的引线框架11的材料的Fe-Ni材料、Cu合金或其它材料具有电镀金属，需要该电镀金属用于半导体元件的键合或安装。可以使用Ag、Au、Ni-Pd等作为电镀材料。然而，特别地，在Ag电镀的情况下，仅在内部引线部分上提供Ag电镀，并在制造半导体器件的随后步骤中，需要在要成为由与内部引线部分相对的表面形成的外部端子部分的部分上提供Sn-Pb电镀或Sn-Bi电镀。在Au电镀和Pd电镀的情况下，在引线框架11上提供的电镀厚度不大于1μm，而在Ag电镀的情况下不大于几个μm。虽然在图3中未示出，但是为了坚固地组装半导体器件，可以将诸如聚酰亚胺或铝箔的热电阻基材料暂时地涂敷在与一个表面相对的引线框架11的表面上，把半导体元件键合到该表面上。
图4A至4E是在区域15中的内部引线部分的附近的横截面图，该区域15用于安装与具有凸点3的半导体元件2结合的引线框架11的元件。
图4A图解说明作为第一实例的内部引线部分16a。在远离内部引线部分16a端部的区域中设置凸面第二外部端子部分17，该第二外部端子部分具有矩形、椭圆形或圆柱形形状且宽度等于或小于内部引线16a的宽度。内部引线部分16a的端部具有比要成为第一外部端子部分18的引线更宽阔的区域。在处于内部引线部分16a的端部处的宽阔区域的平面上形成显著突出的圆台形凸面部分19a。将凸面部分19a定位以便于与设置在半导体元件2的电极焊盘上的凸点3的位置相对应。图4B示出其中将具有凸点3的半导体元件2键合到凸面部分19a的状态。
图4C图解说明作为第二实例的内部引线部分16b。该内部引线部分16b具有凸面部分19b，其形状与第一实例中所示出的形状不同。除了这一点之外，以与第一实施例相同的方式形成内部引线部分16b。凸面部分19b具有其在凸面形状中形成的上表面。图4D示出其中将具有凸点3的半导体元件2键合到该凸面部分19b的状态。
图4E图解说明作为第三实例的内部引线部分16c。除了圆形凹面部分19c具有低于内部引线部分16c的上表面的尖锐突出之外，内部引线部分16c的结构与第一实例的相同。当将圆形凹面部分19c键合到凸点3时，处于其中央的尖锐突出以楔形形状伸入凸点3中。
在该实施例中的第一外部端子部分18具有例如0.2至0.6mm的长度。内部引线部分16a至16c具有例如0.5至2.0mm的长度以及例如0.1至0.40mm的宽度。内部引线部分16a至16c具有例如0.1至0.20mm的厚度。包括形成为第二外部端子部分17的凸面部分的内部引线部分16a至16c中的每一个的厚度等于0.1至0.4mm。该厚度大约在树脂密封半导体器件的树脂厚度范围内。内部引线部分16a和16b端部处的凹面/凸面突出19a和19b分别具有大约0.02至0.1mm的高度和φ0.03至0.1mm的大小。半导体元件2通常具有在1.0×1.0mm至12.0×12.0mm范围内的尺寸和大约0.05至0.15mm的厚度。由图4E中的内部引线部分16c中的圆形凹面部分19c所产生的水平差大约为0.02至0.10mm。
图5A至5C图解说明其中叠置半导体元件的示例性树脂密封半导体器件；图5A是平面图，图5B是后视图，而图5C是沿图5A中的线C-C截取的横截面图。
该树脂密封半导体器件具有一种结构，在该结构中，在引线框架20的上表面上安装第一半导体元件2，而在第一半导体元件2的下表面上安装第二半导体元件21。采用密封树脂4密封位于引线框架20与第一半导体元件2之间的连接部分和位于第一与第二半导体元件2与21之间的连接部分。引线框架20包括布置在如图5B中所示的密封树脂4的背表面上的多个第一外部端子部分5、由第一外部端子部分5的背表面形成的内部引线部分6和由位于各自内部引线部分6的一部分中的凸面部分的最高表面形成的第二外部端子部分7。按照固定间隔设置内部引线部分6以便于包围内部引线部分之内的区域。
如图5C中所示，将第一半导体元件2经由金属凸点3倒装键合到内部引线部分6的端部。预先，将小于第一半导体元件2的第二半导体元件2 1倒装键合到第一半导体元件2的倒装键合部分之内的区域。设定第一与第二半导体元件2与21形成的叠层厚度不大于引线框架20的总厚度。
从密封树脂4中暴露出的引线框架20的底表面、上表面和外部侧表面形成第一外部端子部分5和第二外部端子部分7。如图5A和5B中所示，第一外部端子部分5和第二外部端子部分7暴露在密封树脂4的表面上，这允许叠置多个在相应位置处具有外部端子的半导体器件。
图6A至6D示出图5A至5C中示出的树脂密封半导体器件的部分制造工艺，即，在第一与第二半导体元件之间的倒装键合的步骤。图6A和6B是示出该步骤的透视图，图6C是图6A的一部分的放大透视图，而图6D是图6C的一部分的放大侧视图。
首先，如图6A和6C中所示，在预先被检测的半导体晶圆22上的第一半导体元件2中的每一个的电极焊盘2a上形成Au螺栓凸点，并将第二半导体元件21倒装键合到其上。然后，如图6B中所示，沿着图6D中示出的分割线24使用刀片23来切割将每一第二半导体元件21键合到其上的半导体晶圆22，从而将半导体晶圆22分割成每一个第一半导体元件2。此时，由支撑环25和切割片26支撑半导体晶圆22。
在第一半导体元件2的电极焊盘2a上形成的凸点3具有例如大约φ0.05至0.1mm的平面形的直径和大约0.02至0.1mm的高度。按照下述方式来准备第一与第二半导体元件2与21中的每一个：在由单晶硅基材料制成的半导体基板的表面上形成电路，然后形成具有例如30nm至1000nm厚度的Cu布线图形，并且将电路与各电极焊盘连接。
为了保持键合可靠性不受诸如在将电极焊盘2a键合到内部引线部分的端部时所施加的超声波、负载和热的影响以及在组装半导体器件之后的键合可靠性，电极焊盘2a设置有多层(3至4)AlCu层，通过W、Ti、TiN或类似材料来使其导电，通过CVD方法或类似方法使用Al或Pd、Au或类似材料来覆盖其最上层表面。凸点3例如通过电镀方法由SnPb制成，且Au的纯度不低于99.99％，这是用于在机械方法中形成被称之为螺栓凸点的凸点的材料。当Au用于凸点3时，可以在将凸点3键合到内部引线部分6的端部时可以使用诸如AgPd的导电胶，从而确保键合特性。
(实施例2)
图7A是图解说明根据实施例2的树脂密封半导体器件的平面图，图7B是其后视图，而图7C是其沿图7A中的线D-D截取的横截面图。图8A-8G图解说明图7A至7C中示出的树脂密封半导体器件的制造工艺。
在该实施例中，如图7C中所示，引线框架27的第二外部端子部分28的形状与上述实施例中所示出的略微不同，即，具有较大的面积，其中提供焊锡球29。此外，虽然在图2E中所示出的情况下进行注入模制，但是在该实施例中，通过如图8E中所示的铸封来提供密封树脂30。而且，如图9A和9B中所示，采取研磨树脂的步骤。
图8A是引线框架27的平面图。图8B是通过该工艺制造的树脂密封半导体器件的平面图。图8C至8G是沿图8B中的线E-E截取的横截面图，它们图解说明该工艺的各步骤。
首先，如图8C中所示，准备引线框架27和设置有凸点3的半导体元件2。然后如图8D中所示，在引线框架27上安装半导体元件2。换句话说，将半导体元件2的电极焊盘2a经由凸点3与引线框架27的内部引线部分6连接。
然后，如图8E中所示，通过铸封步骤使用树脂30来密封半导体元件2和引线框架27的内部引线部分6。这里，将引线框架27的第一外部端子部分5、第二外部端子部分28和端子8暴露在树脂30的表面上。铸封不需要使用昂贵的密封模具。在工件上设置将半导体元件键合到其上的引线框架并通过铸封方法使用树脂30来填充该引线框架。其后，例如，通过在150℃的温度下加热2小时来固化树脂30。
然后，如图8F中所示，在研磨步骤中除去不想要的树脂。此后，如图8G中所示，可以提供焊锡球29。
图9A和9B更加具体地示出如图8F中所示的用于除去不想要的树脂的研磨步骤。图9A是横截面图，而图9B是图解说明在研磨后获得的半导体器件的平面图。如图9A中所示，采用利用研磨带31的带研磨方法。在7000rpm至30000rpm的高速下旋转表面渗入有研磨剂的研磨带31。在研磨板32上放置半导体器件2，且研磨板32被往返驱动。虽然通常使用切割油来研磨金属材料，但是使用洗涤水来研磨半导体器件。研磨带31下降几个μm的距离以便研磨密封树脂30。与通常用来研磨半导体晶圆的使用研磨石轮的背研磨方法相比较，带研磨方法在研磨诸如以成批方式被树脂密封的引线框架的条状工件中非常有效。
虽然在附图中未示出，但是在树脂密封步骤中还可以使用通常使用的利用橡胶滚轴的印刷密封系统。在印刷密封系统中，在固化之前通过橡胶滚轴来除去不想要的树脂。这消除了对研磨步骤的需要。通常，与在注入模制中使用的含有硅烷的热固性环氧树脂相比，在铸封或印刷方法中使用的树脂具有较弱的防湿性和较低物理强度。然而，由于半导体器件变得比常规的半导体器件薄很多并且因此需要较小量的密封树脂，增加了使用这种在铸封或印刷方法中采用的树脂的可能性。
图10A和10B图解说明封装图7A和7C中示出的树脂密封半导体器件的实例；图10A是横截面图而图10B是后视图。结合在半导体器件33上设置的具有小管脚的SON(小轮廓封装)半导体器件34和QFP半导体器件35来封装该实施例的半导体器件33。以这种方式，该实施例的半导体器件允许在其上容易地叠置商用的半导体器件。因此，可以以低于其中包括多个半导体元件的半导体器件的成本获得这种半导体器件。
(实施例3)
图11A是图解说明根据实施例3的树脂密封半导体器件的平面图，图11B是其后视图，而图11C是其沿图11A中的线F-F截取的横截面图。该树脂密封半导体器件的结构基本上与图1A至1C中示出的相同。在本实施例的树脂密封半导体器件中，将具有高介电常数的树脂37夹在设置于内部引线部分6之内区域中的两个端子36之间。
该结构允许电阻器的形成。通常，通过在铝陶瓷基板上印刷和烘焙厚膜胶来形成电阻器(正方形形状)。由于厚膜胶要成为电阻器，所以使用氧化铷(RuO2)基胶。这种氧化铷(RuO2)基胶还可以用作本实施例的具有高介电常数的树脂37，并通过配送器系统将其注入在两个端子之间，然后将其固化。在图12A至12F中示出树脂密封半导体器件的制造工艺。
图12A是引线框架38的平面图。图12B是由该工艺制造的树脂密封半导体器件的后视图。图12C至12F是该工艺的各步骤中的横截面图。首先，如图12C中所示，准备引线框架38。由引线框架支撑片39来支撑引线框架38的下表面。例如，通过配送器41在引线框架38的两个端子36之间注入氧化铷(RuO2)基胶40，然后将其固化。结果，形成具有高介电常数的树脂37。图12D至12F中示出的随后步骤与图2D至2F中示出的步骤相同。
取代在两个端子36之间设置具有高介电常数的树脂37，而是设置具有两个端子的电阻器。在这种情况下，这样设置电阻器的两个端子以至于要成为电阻器上表面的区域如此之大以便于允许凸点键合。此外，还能够提供电容器来取代电阻器。在芯片电容器的情况下，使用具有高介电常数的电介质材料。可以使用诸如氧化钛或钛酸钡的各种材料作为电介质材料。在陶瓷电容器的情况下，需要使电介质材料很薄以便于增加电容量，以及交替地叠置电介质材料和电极材料。结果，与其中在两个端子之间注入具有高介电常数的树脂的结构相比较，采用商用电容器成本较低。
(实施例4)
图13A是图解说明根据实施例4的树脂密封半导体器件的平面图，图13B是其后视图，而图13C是其沿图13A中的线G-G截取的横截面图。该树脂密封半导体器件的结构基本上与图1A至1C中示出的相同。在本实施例的树脂密封半导体器件中，设置在内部引线部分6之内区域中的两个端子42分别用作线圈43的起点和终点。
线圈43的形成允许表示高频特性的电感器的Q值增加，从而改善信号输出特性。此外，由于分别作为起点和终点的两个端子42被直接地凸点键合到半导体器件2的电极焊盘，所以，与使用细金属布线的常规键合的情况相比较，在使用具有2GHz的高频的电信号的驱动器的情况下输出提高5dB。然而，线圈43也许会影响其它电信号，并且因此需要适当地确定半导体元件2的设计图形版图或线圈的位置。图14示出频率(GHz)与电感器的Q值之间的关系的实例。该曲线上的Q值随着线圈的匝数量和厚度的增加而增加。
图15是图解说明用来制造本实施例的树脂密封半导体器件的引线框架的平面图。由内部引线部分6、第二外部端子部分7等形成的其外围形状与图2A中示出的相同。与图2A中示出的结构的不同之处在于：在内部引线部分6之内的区域中设置端子42和线圈43。可以利用该引线框架通过图16A至16F示出的各步骤来制造本实施例的树脂密封半导体器件。图16A至16F是沿图13A中的线G-G截取的横截面图，图13A图解说明用于制造图13A至13C示出的树脂密封半导体器件的工艺。
首先，如图16A中所示，准备具有设置在端子42之间的线圈43的引线框架44。引线支撑片45支撑引线框架44的下表面。然后，如图16B中所示，在引线框架44上安装半导体元件2。换句话说，每一半导体元件2的电极焊盘2a经由凸点3与引线框架44的内部引线部分6连接。
然后使用密封树脂4来密封半导体元件2和引线框架44的内部引线部分6。更为具体地，如图16C中所示，在树脂密封模具46a和46b之间放置引线框架44，把半导体元件2键合到该引线框架44，然后用密封树脂4填充。此时，可以在引线框架44与密封模具46b之间设置密封片47。通过刀片23沿着如图16E中所示的分割线24切割如图16D中所示的从密封模具46a和46b中拿出的模制体，从而获得如图16F中所示的单独的树脂密封半导体器件。
(实施例5)
图17A是图解说明根据实施例5的树脂密封半导体器件的横截面图，而图17B是其平面图。图17A示出沿着图17B中的线H-H截取的横截面。在本实施例的树脂密封半导体器件中，使用粘合剂49将第三半导体元件48粘合到设置在如图5A至5C中所示的半导体器件的外围上的第二外部端子部分7的上表面，并且在第二外部端子部分7之外设置端子(内部引线柱)50。第三半导体元件48经由细金属布线54与端子50电连接。
此外，通过根据基于由IEC(国际电工技术委员会)或JEITA(日本电子与信息技术工业协会)制定的半导体器件的外部标准的设计来布置外部端子部分，还能够在本发明的树脂密封半导体器件上安装商用的电子部件或半导体。

Claims (15)

1、一种树脂密封半导体器件，包括：
引线框架，包括设置在一个平面上的多个第一外部端子部分、由各自第一外部端子部分的背表面形成的内部引线部分、以及由位于各自内部引线部分外部的凸面部分的最高表面形成的第二外部端子部分，且按照固定间隔设置所述内部引线部分以环绕该内部引线部分之内的区域；
半导体元件，经由凸点把该半导体元件的连接焊盘倒装键合到内部引线部分；以及
密封树脂，其至少密封该半导体元件的周围的包括内部引线部分和经由凸点的连接部分的部分，
所述第一外部端子部分布置在该密封树脂的下表面区域中沿着该区域的外围，而第二外部端子部分暴露在所述密封树脂的上表面，
其中，多个用于电连接的端子按照栅格图形设置在第一外部端子部分内部的区域中，并暴露在密封树脂的下表面。
2、根据权利要求1所述的树脂密封半导体器件，其中每一个所述用于电连接的端子用于电源GND且其面积大于其它端子。
3、根据权利要求1所述的树脂密封半导体器件，其中用于电连接的包含两个的所述多个端子，分别形成螺旋线圈的起点和终点。
4、根据权利要求1所述的树脂密封半导体器件，其中用于电连接的所述多个端子包括这样两个端子，在所述两个端子之间夹有具有高介电常数的树脂。
5、根据权利要求1所述的树脂密封半导体器件，其中该半导体元件在倒装键合区域的内部的区域中具有多个电极焊盘，并且还将第二半导体元件倒装键合到所述电极焊盘，该第二半导体元件小于所述内部引线部分的内侧端之内的区域，并且比所述引线框架的内部引线部分薄。
6、根据权利要求5所述的树脂密封半导体器件，其中将第三半导体元件的背表面通过粘合剂粘合到所述第二外部端子部分上，并且在所述内部引线部分之外的区域中设置多个内部引线柱，该内部引线柱经由细金属布线与所述第三半导体元件的电极焊盘电连接，并且使其相反方向上的表面暴露在所述密封树脂的下表面区域中。
7、一种引线框架，包括：
设置在一个平面上的多个第一外部端子部分；
内部引线部分，分别由第一外部端子部分的背表面形成，且按照固定间隔设置以环绕所述内部引线部分之内的区域；以及
第二外部端子部分，由位于各自所述内部引线部分之外的凸面部分的最高表面形成，
其中按照栅格图形在所述内部引线部分之内的所述区域中设置多个用于电连接的端子。
8、根据权利要求7所述的引线框架，其中在所述内部引线部分之内的所述区域中设置螺旋布线，并且所述用于电连接的端子分别形成该螺旋布线的起点和终点。
9、根据权利要求7所述的引线框架，其中用于电连接的所述多个端子包括这样两个端子，在所述两个端子之间夹有具有高介电常数的树脂。
10、根据权利要求7所述的引线框架，还包括用于支撑其它元件的绝缘保护片。
11、一种用于制造树脂密封半导体器件的方法，包括：
准备一个引线框架，该引线框架具有多个设置在一个平面上的第一外部端子部分，由各自所述第一外部端子部分的背表面形成的内部引线部分，且按照固定间隔设置该内部引线部分以环绕所述内部引线部分之内的区域，该引线框架还具有由位于各自所述内部引线部分之外的凸面部分的最高表面形成的第二外部端子部分，以及按照栅格图形在所述内部引线部分之内的所述区域中设置的多个用于电连接的端子；
在所述第一半导体元件的电极上形成导电凸点；
将所述第一半导体元件的电极经由导电凸点分别与所述内部引线部分的预定位置以及所述用于电连接的端子连接；
使用树脂密封所述内部引线部分、所述第一半导体元件和所述导电凸点；以及
将密所述封结构与框架分离。
12、根据权利要求11所述的制造树脂密封半导体器件的方法，还包括：
准备第二半导体元件，该第二半导体元件小于所述内部引线部分的内侧端之内的区域，并且比所述引线框架的所述内部引线部分薄；
在所述第一半导体元件中用于经由导电凸点来倒装键合的区域之内的区域中形成多个电极焊盘；
在所述第一半导体元件处于晶圆状态时，将所述第二半导体元件连接到在所述内部区域中形成的所述电极焊盘；
将所述晶圆分割成所述第一半导体元件的单元，
其中在将所述第一半导体元件的电极与所述内部引线部分的预定位置以及用于电连接的所述端子连接的步骤中，提供第二半导体元件连接到其上的所述第一半导体元件。
13、一种制造引线框架的方法，该引线框架包括：多个设置在一个平面上的第一外部端子部分、由各自所述第一外部端子部分的背表面形成的内部引线部分，且该内部引线部分按照固定间隔设置以环绕该内部引线部分之内的区域、由位于各自内部引线部分之外的凸面部分的最高表面形成的第二外部端子部分、设置在内部引线部分之内的所述区域中的两个端子，并且夹在所述两个端子之间具有高介电常数的树脂，该方法包括：
准备引线框架，在该引线框架中将要彼此独立的端子是被连接起来的；
在该引线框架上形成电镀层；
在所述引线框架的一侧的表面上提供保护片，在该引线框架中将要彼此独立的端子是被连接起来的；
分离所述相互连接的端子使它们彼此独立；以及
在所设置的所述内部引线部分之内的所述区域中设置多个用于电连接的端子。
14、根据权利要求13所述的制造引线框架的方法，包括：
提供两个用于电连接的端子，在所述两个端子之间注入具有高介电常数的树脂，并固化树脂。
15、根据权利要求13所述的制造引线框架的方法，其中在要安装半导体器件的区域的外围按照固定间隔设置所述内部引线部分，并且在所述内部引线部分之内的区域中设置具有两个端子的电阻器，该电阻器的两个端子中的每一个都具有要成为上表面的区域，该区域足够大以允许凸点键合。
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