CN201838585U - 堆叠式芯片封装结构及其基板 - Google Patents

堆叠式芯片封装结构及其基板 Download PDF

Info

Publication number
CN201838585U
CN201838585U CN2010202276672U CN201020227667U CN201838585U CN 201838585 U CN201838585 U CN 201838585U CN 2010202276672 U CN2010202276672 U CN 2010202276672U CN 201020227667 U CN201020227667 U CN 201020227667U CN 201838585 U CN201838585 U CN 201838585U
Authority
CN
China
Prior art keywords
bearing seat
pin
load bearing
chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2010202276672U
Other languages
English (en)
Inventor
杨望来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
- Core Of Electronic Science And Technology (zhongshan) Co Ltd
Original Assignee
AMBIT ELECTRONICS (ZHONGSHAN) Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMBIT ELECTRONICS (ZHONGSHAN) Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical AMBIT ELECTRONICS (ZHONGSHAN) Co Ltd
Priority to CN2010202276672U priority Critical patent/CN201838585U/zh
Priority to US13/069,390 priority patent/US8587100B2/en
Application granted granted Critical
Publication of CN201838585U publication Critical patent/CN201838585U/zh
Priority to US13/875,331 priority patent/US9379505B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06517Bump or bump-like direct electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49204Contact or terminal manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种堆叠式芯片封装结构,包括基板、第一芯片、第二芯片及封胶体。所述基板包括多个引脚、承载座、收容部和凹陷部,所述承载座位于所述基板的中间区域。每一个引脚的顶面高于所述承载座的顶面。所述收容部位于所述承载座的上方并被所述引脚环绕。所述凹陷部位于所述引脚和所述承载座的底面。所述第一芯片固定于所述承载座并隐藏于所述收容部中。所述第二芯片固定于所述第一芯片。所述连接线电性连接所述第二芯片和所述引脚。所述封胶体将所述基板、所述连接线、所述第一芯片及所述第二芯片封装于其内,并填充所述凹陷部。本实用新型提供的堆叠式芯片封装结构,通过将第一芯片隐藏于基板的收容部中,缩小了产品体积。

Description

堆叠式芯片封装结构及其基板
技术领域
本实用新型涉及半导体封装技术,特别涉及一种堆叠式芯片封装结构。
背景技术
现有的堆叠式芯片封装结构,是将第一芯片堆叠于基板的顶面再将第二芯片堆叠于第一芯片的顶面。然而,这种封装结构体积较大,不能满足电子产品小型化的发展趋势,且成本较高。
实用新型内容
有鉴于此,需提供一种能减少体积的堆叠式芯片封装结构。
还需提供一种能减少上述堆叠式芯片封装结构体积的基板。
一种堆叠式芯片封装结构,包括基板、第一芯片、第二芯片及封胶体。所述基板包括多个引脚、承载座、收容部和凹陷部,所述承载座位于所述基板的中间区域。每一个引脚的顶面高于所述承载座的顶面。所述收容部位于所述承载座的上方并被所述引脚环绕。所述凹陷部位于所述引脚和承载座的底面。所述第一芯片固定于所述承载座并隐藏于所述收容部中。所述第二芯片固定于所述第一芯片。所述连接线电性连接所述第二芯片和所述引脚。所述封胶体将所述基板、所述连接线、所述第一芯片及所述第二芯片封装于其内,并填充所述凹陷部。
一种基板,用于承载至少一个芯片。所述基板包括多个引脚、承载座、收容部和凹陷部,所述承载座位于所述基板的中间区域。每一个引脚的顶面高于所述承载座的顶面。所述收容部位于所述承载座的上方并被所述引脚环绕。所述凹陷部位于所述引脚和所述承载座的底面。
优选地,所述基板为框架结构,所述框架结构包括多个加强肋,所述加强肋与所述承载座连接。
优选地,所述引脚相互独立并成排分布于所述加强肋之间,每一排至少有一个引脚的长度少于其它引脚的长度。
优选地,每一个引脚呈台阶状,每一排至少有一个引脚包括承接部、连接部及外缘部,所述连接部的高度大于所述承接部的高度,所述外缘部的顶面和底面分别与所述承接部的顶面和底面平齐。
优选地,所述承接部的顶面和所述承载座的顶面平齐并与所述承载座之间形成间隙。
本实用新型的堆叠式芯片封装结构,通过将第一芯片隐藏于基板的收容部中,缩小了产品体积。
附图说明
图1是本实用新型的堆叠式芯片封装结构的组装剖视示意图。
图2是图1中无封胶体的组装剖视示意图。
图3是本实用新型的基板的立体图。
主要元件符号说明
堆叠式芯片封装结构            100
封胶体                        10
基板                          20
本体                          21
承载座                        23
引脚                          25
承接部                        252
连接部                        254
外缘部                        256
加强肋                        26
收容部                        27
凹陷部                        28
第一芯片                      30
锡球                          32
第二芯片                      40
连接线                            50
粘着剂                            60
具体实施方式
图1是本实用新型的堆叠式芯片封装结构100的剖视示意图。本实用新型的堆叠式芯片封装结构100包括封胶体10、基板20、第一芯片30、第二芯片40及多个连接线50。
请参照图2和图3,基板20为框架结构,其包括本体21、承载座23、多个引脚25、多个加强肋26、收容部27及凹陷部28。承载座23位于基板20的中间区域并通过所述加强肋26与本体21相连,从而增加承载座23的稳定性并避免偏移。
所述引脚25相互独立并成排分布于所述加强肋26之间,每一排至少有一个引脚25的长度少于其它的引脚25的长度。在本实施方式中,每一排包括三个引脚25,其中中间引脚25的长度小于另两个引脚25的长度。
在本实施方式中,每一排至少有一个引脚25包括承接部252、连接部254及外缘部256,连接部254的高度大于承接部252的高度。连接部254的顶面高于承载座23的顶面。承接部252的顶面和底面分别与承载座23的顶面和的底面平齐,并与承载座23之间形成间隙。外缘部256的顶面和底面分别与承接部252的顶面和底面平齐,并分别与本体21的的顶面和底面平齐。每一排的其它引脚25不包括承接部252。
具有承接部252的每一个引脚25的承接部252和连接部254的顶面和底面均被半蚀刻,形成台阶状。无承接部252的每一个引脚25的连接部254的顶面和底面均被半蚀刻,亦形成台阶状。
在其它实施方式中,每一个引脚25包括承接部252、连接部254及外缘部256,均为台阶状。
因连接部254的顶面高于承载座23的顶面,从而在承载座23的上方形成收容部27,即收容部27位于承载座23的上方并被连接部254环绕。
凹陷部28通过半蚀刻方式形成于承载座23和所述引脚25的底面。形成于承载座23的凹陷部28位于承载座23的底面四周,形成于所述引脚25的凹陷部28位于承接部252和外缘部256的底面。
基板20的背面还粘着胶膜(未图示),用于固定承载座23和所述引脚25,并防止后续封胶时的溢胶问题。
第一芯片30包括多个锡球32,通过所述锡球32电性连接于承载座23和所述引脚25的承接部252。组装后,第一芯片30的顶面与连接部254的顶面平齐,即第一芯片30隐藏于基板20的收容部27中。
第二芯片40通过粘着剂60固定于第一芯片30。
连接线50电性连接第二芯片40和所述引脚25的连接部254,这样第二芯片40便与基板20电性连接。在本实施方式中,连接线50为金线。
封胶体10将连接线50、第一芯片30、第二芯片40及基板20封装于内,封胶体10的外缘与基板20的外缘平齐,且封胶体10填充凹陷部28、第一芯片30的锡球32之间的间隙、承载座23与每一个引脚25之间的间隙及基板20的顶面,且基板20的各引脚25及承载座23的底面非凹陷部28部分外露于封胶体10底面外形成各自独立不相连状,待封胶体10固化后,撕去粘贴于基板20背面的胶膜,即形成堆叠式芯片封装结构100。在本实施方式中,封胶体10为黑胶。
因第一芯片30隐藏于基板20的收容部27中,从而减少了堆叠式芯片封装结构100的高度,即缩小了产品体积并节约了成本。
因封胶体10填充凹陷部28、第一芯片30的锡球32之间的间隙、承载座23与每一个引脚25之间的间隙,从而增进基板20与封胶体10之间的连接力,提高水气渗入堆叠式芯片封装结构100内部的困难度,进而确保堆叠式芯片封装结构100具有良好的可靠度。

Claims (10)

1.一种堆叠式芯片封装结构,包括基板、第一芯片、第二芯片及封胶体,其特征在于:
所述基板包括多个引脚、承载座、收容部和凹陷部,所述承载座位于所述基板的中间区域,每一个引脚的顶面高于所述承载座的顶面,所述收容部位于所述承载座的上方并被所述引脚环绕,所述凹陷部位于所述引脚和所述承载座的底面;
所述第一芯片固定于所述承载座并隐藏于所述收容部中;
所述第二芯片固定于所述第一芯片;
所述连接线电性连接所述第二芯片和所述引脚;及
所述封胶体将所述基板、所述连接线、所述第一芯片及所述第二芯片封装于其内;
其中,所述封胶体填充所述凹陷部。
2.如权利要求1所述的堆叠式芯片封装结构,其特征在于,所述基板为框架结构,所述框架结构包括多个加强肋,所述加强肋与所述承载座连接。
3.如权利要求2所述的堆叠式芯片封装结构,其特征在于,所述引脚相互独立并成排分布于所述加强肋之间,每一排至少有一个引脚的长度少于其它引脚的长度。
4.如权利要求3所述的堆叠式芯片封装结构,其特征在于,每一个引脚呈台阶状,每一排至少有一个引脚包括承接部、连接部及外缘部,所述连接部的高度大于所述承接部的高度,所述外缘部的顶面和底面分别与所述承接部的顶面和底面平齐。
5.如权利要求4所述的堆叠式芯片封装结构,其特征在于,所述承接部的顶面和所述承载座的顶面平齐并与所述承载座之间形成间隙。
6.一种基板,用于承载至少一个芯片,其特征在于:所述基板包括多个引脚、承载座、收容部和凹陷部,所述承载座位于所述基板的中间区域,每一个引脚的顶面高于所述承载座的顶面,所述收容部位于所述承载座的上方并被所述引脚环绕,所述凹陷部位于所述引脚和承载座的底面。
7.如权利要求6所述的基板,其特征在于,所述基板为框架结构,所述框架结构包括多个加强肋,所述加强肋与所述承载座连接。
8.如权利要求7所述的基板,其特征在于,所述引脚相互独立并成排分布于所述加强肋之间,每一排至少有一个引脚的长度少于其它引脚的长度。
9.如权利要求8所述的基板,其特征在于,每一个引脚呈台阶状,每一排至少有一个引脚包括承接部、连接部及外缘部,所述连接部的高度大于所述承接部的高度,所述外缘部的顶面和底面分别与所述承接部的顶面和底面平齐。
10.如权利要求9所述的基板,其特征在于,所述承接部的顶面和所述承载座的顶面平齐并与所述承载座之间形成间隙。
CN2010202276672U 2010-06-17 2010-06-17 堆叠式芯片封装结构及其基板 Expired - Lifetime CN201838585U (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010202276672U CN201838585U (zh) 2010-06-17 2010-06-17 堆叠式芯片封装结构及其基板
US13/069,390 US8587100B2 (en) 2010-06-17 2011-03-23 Lead frame and semiconductor package using the same
US13/875,331 US9379505B2 (en) 2010-06-17 2013-05-02 Method of manufacturing lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010202276672U CN201838585U (zh) 2010-06-17 2010-06-17 堆叠式芯片封装结构及其基板

Publications (1)

Publication Number Publication Date
CN201838585U true CN201838585U (zh) 2011-05-18

Family

ID=44008688

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010202276672U Expired - Lifetime CN201838585U (zh) 2010-06-17 2010-06-17 堆叠式芯片封装结构及其基板

Country Status (2)

Country Link
US (2) US8587100B2 (zh)
CN (1) CN201838585U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102290399A (zh) * 2010-06-17 2011-12-21 国碁电子(中山)有限公司 堆叠式芯片封装结构及方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012267B2 (en) * 2012-05-23 2015-04-21 Intersil Americas LLC Method of manufacturing a packaged circuit including a lead frame and a laminate substrate
US11545418B2 (en) * 2018-10-24 2023-01-03 Texas Instruments Incorporated Thermal capacity control for relative temperature-based thermal shutdown
CN117253871B (zh) * 2023-11-20 2024-02-13 佛山市蓝箭电子股份有限公司 一种半导体封装器件及其封装方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6639308B1 (en) * 1999-12-16 2003-10-28 Amkor Technology, Inc. Near chip size semiconductor package
US6841854B2 (en) * 2002-04-01 2005-01-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP3910598B2 (ja) * 2004-03-04 2007-04-25 松下電器産業株式会社 樹脂封止型半導体装置およびその製造方法
US7129569B2 (en) * 2004-04-30 2006-10-31 St Assembly Test Services Ltd. Large die package structures and fabrication method therefor
US7772681B2 (en) * 2005-06-30 2010-08-10 Fairchild Semiconductor Corporation Semiconductor die package and method for making the same
DE102006005420B4 (de) * 2006-02-03 2010-07-15 Infineon Technologies Ag Stapelbares Halbleiterbauteil und Verfahren zur Herstellung desselben
JP2009076658A (ja) * 2007-09-20 2009-04-09 Renesas Technology Corp 半導体装置及びその製造方法
US8084299B2 (en) * 2008-02-01 2011-12-27 Infineon Technologies Ag Semiconductor device package and method of making a semiconductor device package
MY171813A (en) * 2009-11-13 2019-10-31 Semiconductor Components Ind Llc Electronic device including a packaging substrate having a trench

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102290399A (zh) * 2010-06-17 2011-12-21 国碁电子(中山)有限公司 堆叠式芯片封装结构及方法
CN102290399B (zh) * 2010-06-17 2013-08-28 国碁电子(中山)有限公司 堆叠式芯片封装结构及方法

Also Published As

Publication number Publication date
US9379505B2 (en) 2016-06-28
US8587100B2 (en) 2013-11-19
US20110309484A1 (en) 2011-12-22
US20130239409A1 (en) 2013-09-19

Similar Documents

Publication Publication Date Title
CN201838585U (zh) 堆叠式芯片封装结构及其基板
US7250677B1 (en) Die package structure
CN208596671U (zh) 大功率封装体
CN102290399B (zh) 堆叠式芯片封装结构及方法
CN205752163U (zh) 二极管模块的框架
CN110648991B (zh) 一种用于框架封装芯片的转接板键合结构及其加工方法
CN209461442U (zh) 一种集成被动元件的芯片封装结构
CN201956341U (zh) 中间引脚的引线框架结构
CN201829490U (zh) 芯片区打孔集成电路引线框架
CN209526084U (zh) 一种改进型sot223框架
CN100416783C (zh) 晶穴朝下型芯片封装构造的制造方法及构造
CN201063342Y (zh) 一种多芯片封装结构
CN201174381Y (zh) 减少集成电路封装厚度的结构
CN109712948A (zh) 一种集成被动元件的芯片封装结构
CN218827085U (zh) 新型qfn封装结构
CN110600447A (zh) 一种新型引线框架结构及封装结构
CN212967685U (zh) 一种新型dfn封装结构
CN212182316U (zh) 一种无载体的半导体叠层封装结构
CN216288426U (zh) 一种高效高可靠性sot23-6封装mosfet引线框架结构
CN202796929U (zh) 一种贴片式引线框架
CN210379035U (zh) 一种基板和框架混合的三维系统级封装结构
CN214956859U (zh) 一种三芯片高结合力引线框架及半导体封装结构
CN102738110A (zh) 一种贴片式引线框架
CN202259265U (zh) 新型无基岛预填塑封料引线框结构
CN201681868U (zh) 芯片倒装封装结构

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Free format text: FORMER OWNER: HONGFUJIN PRECISE INDUSTRY CO., LTD.

Effective date: 20130118

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130118

Address after: 528437 export processing zone of Torch Development Zone, Guangdong, Zhongshan

Patentee after: Ambit Electronics (Zhongshan) Co., Ltd.

Address before: 528437 export processing zone of Torch Development Zone, Guangdong, Zhongshan

Patentee before: Ambit Electronics (Zhongshan) Co., Ltd.

Patentee before: Hon Hai Precision Industry Co., Ltd.

C56 Change in the name or address of the patentee

Owner name: XUNXIN ELECTRONIC TECHNOLOGY (ZHONGSHAN) CO., LTD.

Free format text: FORMER NAME: AMBIT MICROSYSTEMS (ZHONGSHAN) CORPORATION

CP03 Change of name, title or address

Address after: 528437 No. 9 Jianye East Road, Torch Development Zone, Guangdong, Zhongshan

Patentee after: - the core of Electronic Science and Technology (Zhongshan) Co., Ltd.

Address before: 528437 export processing zone of Torch Development Zone, Guangdong, Zhongshan

Patentee before: Ambit Electronics (Zhongshan) Co., Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20110518