JP4289335B2 - 電子部品、回路基板及び電子機器 - Google Patents
電子部品、回路基板及び電子機器 Download PDFInfo
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- JP4289335B2 JP4289335B2 JP2005231573A JP2005231573A JP4289335B2 JP 4289335 B2 JP4289335 B2 JP 4289335B2 JP 2005231573 A JP2005231573 A JP 2005231573A JP 2005231573 A JP2005231573 A JP 2005231573A JP 4289335 B2 JP4289335 B2 JP 4289335B2
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- connection terminal
- semiconductor device
- electronic component
- electrode
- active surface
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Description
そこで、従来よりCSP(Chip Scale / Size Package)が適用された半導体装置が開発されている。また、特に近年では、ウエハレベルでCSPを形成する、いわゆるウエハレベルCSP(W−CSP)が注目されている(例えば、特許文献1、特許文献2参照)。ウエハレベルCSPでは、再配線が施された複数の半導体素子(集積回路)をウエハ単位で形成し、その後、各半導体素子(集積回路)毎に切断し個片化して、半導体装置を得るようにしている。
そこで、このような構造体とこれを駆動する半導体装置とを一体化して電子部品とし、構造体と半導体装置との集合体(電子部品)を小型化することが考えられる。特に、半導体装置については、前記のウエハレベルCSPによる半導体装置を用いれば、より一層の小型化が可能になる。
この半導体装置によれば、外部接続端子とは別に接続用端子が設けられているので、この接続用端子を用いて例えば他の機能構造体との機械的接続や電気的接続を行うことにより、この半導体装置と機能構造体とを一体化して電子部品を形成し、その小型化を図ることが可能になる。
このようにすれば、外部接続端子の位置やその配列を自由(任意)に設計することができる。
このようにすれば、接続用端子を用いて半導体装置の電気的な処理が可能になる。また、接続用端子を用いて他の機能構造体との電気的接続を行うことにより、例えばこの半導体装置を前記機能構造体の駆動用素子として機能させることも可能になる。
このようにすれば、例えば電気的検査やトリミングなどによる半導体装置の機能の保証や調整を、前記接続用端子を用いて行うことが可能になる。
このようにすれば、接続用端子を用いて他の機能構造体との電気的接続を行うことにより、この半導体装置を前記機能構造体の駆動用素子として機能させることが可能になる。
このようにすれば、配線を介して第1電極と外部接続端子とが電気的に接続されることにより、この半導体装置に再配置配線が形成され、したがって外部接続端子の大きさや形状、配置等の自由度が大となる。また、応力緩和層が設けられているので、外部接続端子を介しての半導体装置と外部機器等との接続信頼性が高められる。
接続用端子を電気的な検査や調整に用いた後、これを封止樹脂で封止するようにすれば、その後この接続用端子を用いた調整等が不可能となることにより、検査や調整後の半導体装置の信頼性を高めることができる。また、接続用端子を他の部品との間の電気的接続に用いた後、封止樹脂で封止するようにすれば、この接続用端子での不測の短絡を防止することができ、さらにはこの接続用端子での接続強度を高めることもできる。
このようにすれば、柱状の接続用端子が例えば下層の導電部と上層の導電部とを導通させる上下導通部材として機能することにより、半導体装置全体での再配置配線についての自由度が高まる。
この半導体装置の製造方法によれば、半導体基板の能動面側に外部接続端子とは別に接続用端子を設けるので、得られた半導体装置は、この接続用端子を用いて例えば他の機能構造体との機械的接続や電気的接続を行うことにより、機能構造体と一体化して電子部品を形成し、その小型化を図り得るものとなる。
このようにすれば、得られた半導体装置は、接続用端子を用いることで電気的な処理が可能になる。また、接続用端子を用いて他の機能構造体との電気的接続を行うことにより、例えばこの半導体装置を前記機能構造体の駆動用素子として機能させることも可能になる。
このようにすれば、効率良く半導体装置を製造することが可能となり、したがって半導体装置の低コスト化を図ることができる。
接続用端子を電気的な検査や調整に用いた後、これを封止樹脂で封止すれば、その後この接続用端子を用いた調整等が不可能となることにより、検査や調整後の半導体装置の信頼性を高めることができる。また、接続用端子を他の部品との間の電気的接続に用いた後、封止樹脂で封止すれば、この接続用端子での不測の短絡を防止することができ、さらにはこの接続用端子での接続強度を高めることもできる。
前記半導体装置における前記半導体基板の能動面側と反対の側に配設され、前記接続用端子と電気的接続手段によって接続された機能構造体と、を具備してなることを特徴としている。
この電子部品によれば、半導体装置と機能構造体とを、接続用端子を利用して電気的接続手段で接続しているので、半導体装置と機能構造体とが一体化されて電子部品となり、したがって小型化が図られたものとなる。
このようにすれば、半導体装置と機能構造体との立体接続構造を簡便に得ることができる。
このようにすれば、外部接続端子を用いてこの電子部品を外部機器等に接続する際、ワイヤによって干渉されることなく良好に接続を行うことが可能になる。
このようにすれば、封止樹脂によって電気的接続手段が保護されることで、電子部品としての信頼性が向上するとともに、量産を行ううえで有利な構造となる。
この回路基板によれば、小型化が図られた電子部品が実装されているので、その分高密度実装が可能となり、したがって高機能化を図ることができる。
この電子機器によれば、小型化が図られた電子部品が実装されているので、その分高密度実装が可能となり、したがって高機能化を図ることができる。
[半導体装置]
図1、図2は本発明の半導体装置の一実施形態を示す図であり、これらの図において符号1は、ウエハレベルCSP(W−CSP)構造の半導体装置である。なお、図1の側断面図は、図2の模式平面図における、A−A線矢視断面図とする。
なお、第1絶縁層17については、酸化珪素(SiO2)、窒化珪素(Si3N4)等の無機絶縁材料によって形成することもできる。
次に、前記構成の半導体装置1の製造方法について図3を参照して説明する。なお、本実施形態においては、図4に示すように同一のシリコンウエハ(基板)100上に半導体装置1を複数一括して形成しておき、その後ダイシング(切断)して個片化することにより、半導体装置1を得るようにしているが、図3では説明を簡単にするため、単純化して1つの半導体装置1の形成のみを示している。
次に、第1の電極11及び第2の電極18を覆ってシリコン基板10上に第1絶縁層14を形成し、さらに、この第1絶縁層14を覆って樹脂層(図示せず)を形成する。
さらに、周知のフォトリソグラフィ法及びエッチング法によって第1の電極11及び第2の電極18を覆う位置の絶縁材料を除去し、開口部14aを形成する。これにより、これら開口部14a内に第1の電極11及び第2の電極18を露出させる。
そして、図4に示すように、ダイシング装置110によってシリコンウエハ(基板)100を半導体装置1毎にダイシング(切断)し、個片化することにより、半導体装置1を得る。
このように、特に本発明の接続用端子13を、集積回路の機能検査や機能調整用として構成すれば、半導体装置1の品質安定性を確保し、信頼性を高めることができる。
すなわち、前記半導体装置1と機能構造体とを一体化することにより、本発明の電子部品を構成することができる。以下、前記半導体装置1を用いてなる本発明の電子部品について説明する。
図5は、本発明の電子部品の一実施形態を示す図であり、図5中符号30は電子部品である。この電子部品30は、前記の半導体装置1と機能構造体31とを具備して構成されたものである。
電子部品30は、プリント配線板Pに実装される際、これら外部接続端子12を用いて実装がなされることから、金ワイヤ32はプリント配線板P側に向くことになる。そこで、本実施形態では、特に実装時において金ワイヤ32がプリント配線板Pに当接しないよう、この金ワイヤ32のワイヤボンディング高さ、すなわちこの金ワイヤ32の頂点高さを、外部接続端子12の高さより十分に低くしている。
なお、半導体装置1の接続用端子13と機能構造体31側の接続端子とをワイヤボンディングした後には、図5中二点鎖線で示すように、接続用端子13を封止樹脂33で封止するのが好ましい。このようにすれば、接続用端子13に対する金ワイヤ32の接続強度を高めることができる。さらに、接続用端子13、金ワイヤ32が樹脂で被覆されるので、特に後の工程による接続部構造へのダメージも低減でき、接続信頼性をも著しく向上させることができる。
また、シリコン基板10と外部接続端子12との間に応力緩和層15を設けているので、例えば外部接続端子12を介して半導体装置1とプリント配線板Pなどの外部機器とを接続した際、接続時に圧力や熱に起因する応力が外部接続端子12に生じても、応力緩和層15でこれを緩和し吸収することにより、断線などの不都合が生じるのを防止することができる。したがって、外部接続端子12と外部機器との接続信頼性を高めることができる。
なお、この半導体装置40では、外部接続端子12と配線16との間にも、前記接続用端子41と同一工程で形成されたポスト42が形成されている。これによって外部接続端子12は、第2絶縁層17の上面側にて、ポスト42を介して配線16と電気的に接続したものとなっている。
本発明の回路基板は、前記の電子部品30が、例えば図1中二点鎖線で示したプリント配線板Pに実装されることで形成される。すなわち、電子部品30における半導体装置1(40)の外部接続端子12が、プリント配線板Pの導電部に電気的に接続されることにより、本発明の一実施形態となる回路基板が形成されるのである。
この回路基板によれば、小型化が図られた電子部品30が実装されているので、その分高密度実装が可能となり、したがって高機能化を図ることができる。
この電子機器にあっても、小型化が図られた電子部品が実装されているので、その分高密度実装が可能となり、したがって高機能化を図ることができる。
Claims (11)
- 半導体基板と、前記半導体基板の能動面側に設けられた第1の電極と、前記第1の電極に電気的に接続して前記能動面側に設けられた外部接続端子と、前記半導体基板の能動面側に設けられた接続用端子とを備えた半導体装置と、
前記半導体装置における前記半導体基板の能動面側と反対の側に配設され、前記接続用端子と電気的接続手段によって接続された機能構造体と、を具備してなり、
前記電気的接続手段がワイヤボンディングであり、
前記接続用端子が、柱状に形成されていることを特徴とする電子部品。 - 前記第1の電極と前記外部接続端子との電気的接続が、前記能動面側に設けられた再配置配線によってなされていることを特徴とする請求項1記載の電子部品。
- 前記接続用端子が、前記半導体基板の能動面側に設けられた第2の電極に電気的に接続していることを特徴とする請求項1又は2に記載の電子部品。
- 前記接続用端子が、電気的な検査や調整を行うための端子であることを特徴とする請求項3記載の電子部品。
- 前記接続用端子が、他の部品との間の電気的接続をなすための端子であることを特徴とする請求項3記載の電子部品。
- 前記外部接続端子が前記第1の電極に配線を介して接続され、
前記半導体基板と前記外部接続端子との間に、応力緩和層が設けられていることを特徴とする請求項1〜5のいずれか一項に記載の電子部品。 - 前記接続用端子が、封止樹脂によって封止されてなることを特徴とする請求項1〜6のいずれか一項に記載の電子部品。
- 前記外部接続端子が、前記ワイヤボンディングのワイヤより高く形成されていることを特徴とする請求項1〜7のいずれか一項に記載の電子部品。
- 前記電気的接続手段が、封止樹脂によって封止されてなることを特徴とする請求項1〜8のいずれか一項に記載の電子部品。
- 請求項1〜9のいずれか一項に記載の電子部品が実装されていることを特徴とする回路基板。
- 請求項1〜9のいずれか一項に記載の電子部品が実装されていることを特徴とする電子機器。
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CNB2006101101452A CN100477189C (zh) | 2005-08-10 | 2006-08-07 | 半导体装置及制造方法、电子部件、电路基板及电子设备 |
US11/500,264 US7432585B2 (en) | 2005-08-10 | 2006-08-07 | Semiconductor device electronic component, circuit board, and electronic device |
TW095129010A TW200721418A (en) | 2005-08-10 | 2006-08-08 | Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronlc device |
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GB2464549B (en) | 2008-10-22 | 2013-03-27 | Cambridge Silicon Radio Ltd | Improved wafer level chip scale packaging |
JP5355504B2 (ja) | 2009-07-30 | 2013-11-27 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
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JP2001257307A (ja) | 2000-03-09 | 2001-09-21 | Sharp Corp | 半導体装置 |
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