CN1163955C - 硅片保持体及其制造方法 - Google Patents
硅片保持体及其制造方法 Download PDFInfo
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- CN1163955C CN1163955C CNB991024710A CN99102471A CN1163955C CN 1163955 C CN1163955 C CN 1163955C CN B991024710 A CNB991024710 A CN B991024710A CN 99102471 A CN99102471 A CN 99102471A CN 1163955 C CN1163955 C CN 1163955C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
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- 239000010703 silicon Substances 0.000 title claims abstract description 7
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 16
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
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- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- SZINCDDYCOIOJQ-UHFFFAOYSA-L manganese(2+);octadecanoate Chemical compound [Mn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O SZINCDDYCOIOJQ-UHFFFAOYSA-L 0.000 description 1
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- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical class [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
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- C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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- C04B35/62695—Granulation or pelletising
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- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
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Applications Claiming Priority (6)
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| JP49283/98 | 1998-03-02 | ||
| JP4928398 | 1998-03-02 | ||
| JP49283/1998 | 1998-03-02 | ||
| JP44544/1999 | 1999-02-23 | ||
| JP04454499A JP4013386B2 (ja) | 1998-03-02 | 1999-02-23 | 半導体製造用保持体およびその製造方法 |
| JP44544/98 | 1999-02-23 |
Publications (2)
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| CN1227968A CN1227968A (zh) | 1999-09-08 |
| CN1163955C true CN1163955C (zh) | 2004-08-25 |
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| CNB991024710A Expired - Lifetime CN1163955C (zh) | 1998-03-02 | 1999-03-02 | 硅片保持体及其制造方法 |
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| EP (1) | EP0940845A3 (enExample) |
| JP (1) | JP4013386B2 (enExample) |
| KR (1) | KR100554044B1 (enExample) |
| CN (1) | CN1163955C (enExample) |
| CA (1) | CA2264317C (enExample) |
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| JP4013386B2 (ja) * | 1998-03-02 | 2007-11-28 | 住友電気工業株式会社 | 半導体製造用保持体およびその製造方法 |
| JP2002057207A (ja) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
| JP4529690B2 (ja) * | 2000-01-20 | 2010-08-25 | 住友電気工業株式会社 | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
| JP4651148B2 (ja) * | 2000-02-29 | 2011-03-16 | 京セラ株式会社 | 耐プラズマ部材及びプラズマ装置 |
| JP2001247382A (ja) | 2000-03-06 | 2001-09-11 | Ibiden Co Ltd | セラミック基板 |
| US6888236B2 (en) * | 2000-03-07 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic substrate for manufacture/inspection of semiconductor |
| JP2001253777A (ja) * | 2000-03-13 | 2001-09-18 | Ibiden Co Ltd | セラミック基板 |
| US20040074586A1 (en) * | 2000-03-15 | 2004-04-22 | Yasuji Hiramatsu | Method of producing electrostatic chucks and method of producing ceramic heaters |
| EP1233651A1 (en) * | 2000-04-07 | 2002-08-21 | Ibiden Co., Ltd. | Ceramic heater |
| JP2001351763A (ja) * | 2000-06-02 | 2001-12-21 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
| JP2002110772A (ja) * | 2000-09-28 | 2002-04-12 | Kyocera Corp | 電極内蔵セラミックス及びその製造方法 |
| JP4614403B2 (ja) | 2000-10-13 | 2011-01-19 | 信越石英株式会社 | プラズマ耐食性ガラス部材 |
| JP4312372B2 (ja) * | 2000-12-11 | 2009-08-12 | 日本碍子株式会社 | 静電チャックおよびその製造方法 |
| JP4772187B2 (ja) * | 2000-12-27 | 2011-09-14 | 株式会社東芝 | AlN焼結体およびこれを用いたAlN回路基板 |
| KR100432639B1 (ko) * | 2001-03-23 | 2004-05-22 | 한주테크놀로지 주식회사 | 유전층 직접부착형 정전 척의 제조방법 |
| JP5031147B2 (ja) * | 2001-03-29 | 2012-09-19 | 電気化学工業株式会社 | 窒化アルミニウム焼結体の製造方法 |
| US20050211385A1 (en) | 2001-04-30 | 2005-09-29 | Lam Research Corporation, A Delaware Corporation | Method and apparatus for controlling spatial temperature distribution |
| JP3973872B2 (ja) * | 2001-10-17 | 2007-09-12 | 住友大阪セメント株式会社 | 電極内蔵型サセプタ及びその製造方法 |
| FR2845078B1 (fr) * | 2002-09-26 | 2004-10-29 | Alstom | PROCEDE DE FABRICATION D'UN SUBSTRAT EN NITRURE D'ALUMINIUM AlN |
| JP2003243494A (ja) * | 2002-10-28 | 2003-08-29 | Ibiden Co Ltd | セラミック基板 |
| US7488543B2 (en) * | 2003-06-13 | 2009-02-10 | Tokuyama Corporation | Aluminum nitride conjugate body and method of producing the same |
| CN100432024C (zh) * | 2003-10-31 | 2008-11-12 | 株式会社德山 | 氮化铝接合体及其制造方法 |
| JP4281605B2 (ja) * | 2004-04-08 | 2009-06-17 | 住友電気工業株式会社 | 半導体加熱装置 |
| JP2006124206A (ja) * | 2004-10-27 | 2006-05-18 | Sumitomo Electric Ind Ltd | 窒化アルミニウム脱脂中間体及び焼結体 |
| JP4987238B2 (ja) * | 2005-03-25 | 2012-07-25 | 日本碍子株式会社 | 窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法 |
| JP2007042910A (ja) * | 2005-08-04 | 2007-02-15 | Sumitomo Electric Ind Ltd | ウェハプローバ用チャックトップおよびそれを搭載したウェハプローバ |
| JP4590368B2 (ja) * | 2006-03-24 | 2010-12-01 | 日本碍子株式会社 | 静電チャックの製造方法 |
| US8573836B2 (en) * | 2006-10-26 | 2013-11-05 | Tokyo Electron Limited | Apparatus and method for evaluating a substrate mounting device |
| JP5085959B2 (ja) * | 2007-02-28 | 2012-11-28 | 太平洋セメント株式会社 | セラミックス部材 |
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- 1999-03-01 TW TW088103074A patent/TW412823B/zh not_active IP Right Cessation
- 1999-03-02 CN CNB991024710A patent/CN1163955C/zh not_active Expired - Lifetime
- 1999-03-02 EP EP99301559A patent/EP0940845A3/en not_active Withdrawn
- 1999-03-02 CA CA002264317A patent/CA2264317C/en not_active Expired - Fee Related
- 1999-03-02 KR KR1019990006817A patent/KR100554044B1/ko not_active Expired - Fee Related
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| EP0940845A2 (en) | 1999-09-08 |
| US20030066587A1 (en) | 2003-04-10 |
| US6770379B2 (en) | 2004-08-03 |
| CA2264317C (en) | 2003-04-08 |
| KR19990077529A (ko) | 1999-10-25 |
| US6423400B1 (en) | 2002-07-23 |
| JP2000058631A (ja) | 2000-02-25 |
| CN1227968A (zh) | 1999-09-08 |
| JP4013386B2 (ja) | 2007-11-28 |
| KR100554044B1 (ko) | 2006-02-22 |
| CA2264317A1 (en) | 1999-09-02 |
| EP0940845A3 (en) | 2000-12-13 |
| TW412823B (en) | 2000-11-21 |
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