JP4590368B2 - 静電チャックの製造方法 - Google Patents
静電チャックの製造方法 Download PDFInfo
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- JP4590368B2 JP4590368B2 JP2006081975A JP2006081975A JP4590368B2 JP 4590368 B2 JP4590368 B2 JP 4590368B2 JP 2006081975 A JP2006081975 A JP 2006081975A JP 2006081975 A JP2006081975 A JP 2006081975A JP 4590368 B2 JP4590368 B2 JP 4590368B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B2235/3222—Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3895—Non-oxides with a defined oxygen content, e.g. SiOC, TiON
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6565—Cooling rate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/85—Intergranular or grain boundary phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
Description
図1は、本発明の実施形態による静電チャックを示す断面図である。この静電チャックは、外形が略円盤状に形成されており、図1は、その径方向中心を通る断面を示している。
前記基体3は、サマリウムを含む窒化アルミニウム焼結体からなる。そして後述するように、基体3を構成する窒化アルミニウムの結晶粒子の粒界部分には、サマリウム−アルミニウム酸化物相33(図5等参照)が析出している。このサマリウム−アルミニウム酸化物相33は、例えばSmAl11O18相であり、電流を通し易いという性質を有するため、結晶粒子の粒界部分に沿って連続して形成することによって、体積抵抗率を低下させることができる。ここで、サマリウム−アルミニウム酸化物相33がSmAl11O18相の場合は、特に、体積抵抗率を低下させる効果が高い。
前記基体内の上部側には、モリブデン(Mo)を含む電極17が埋設されている。なお、電極17としては、モリブデン(Mo)以外にも、タングステン(W)、タングステン・カーバイド(WC)等の高融点金属を用いることができる。また、埋設できるタイプであれば、金網状(メッシュ状)、パンチングメタル等の種々の形状のものを用いることができる。
前記基体3における電極と基体表面7との間は、誘電体層21に形成されており、該誘電体層21において、窒化アルミニウムの結晶粒子の粒界部分にサマリウム−アルミニウム酸化物相33が析出している。また、電極17と該電極17の近傍部の基体部分とでは、熱膨張係数の差違があるため、静電チャック1の製造時に加熱を施すと、電極周辺部の基体部分と電極17との間に微小な応力歪みが生じる。この応力歪みが発生した電極近傍部には、サマリウム−アルミニウム酸化物相33がより析出しやすくなると考えられる。
サマリウム−アルミニウム酸化物相33の含有率は面積比で2.5%以下に設定している。この面積比の求め方を、図8を用いて説明する。図8は、電極の近傍部におけるサマリウム−アルミニウム酸化物相33の析出度合いを示す概略図であり、黒色部分はサマリウム−アルミニウム酸化物相33を示し、その他の部分を白色で表している。
以下に、本発明の実施形態による静電チャック1の製造方法を簡単に説明する。
3 基体
7 基体表面(上面)
17 電極
21 誘電体層
23 メッシュ状電極(電極)
25 線状体
33 サマリウム−アルミニウム酸化物相
Claims (2)
- 酸化サマリウム及び窒化アルミニウムを含むセラミックスからなる予備成形体を形成する予備成形体作製ステップと、
前記予備成形体における所定の外面上に、モリブデンを含む電極を配置したのち、この所定の外面及び電極の上に、酸化サマリウムを含む窒化アルミニウムの原料粉末を配置し、これらの予備成形体、電極及び原料粉末を加圧成形することにより、前記電極を埋設した成形体を形成する成形体作製ステップと、
この成形体を加熱して焼成を行ったのち、室温まで冷却する焼成・冷却ステップと、を含んでなる静電チャックの製造方法であって、
前記焼成・冷却ステップにおける冷却速度が200℃/時以上であり、
焼結体中の酸素量が一定になるように、前記原料粉末中の酸素量に応じた量の酸化アルミニウムを添加してサマリア/アルミナのモル比を0.28に設定し、焼結体中にSmAl 11 O 18 相が析出するようにしたことを特徴とする静電チャックの製造方法。 - 前記冷却速度を、300〜900℃/時に設定したことを特徴とする請求項1に記載の静電チャックの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006081975A JP4590368B2 (ja) | 2006-03-24 | 2006-03-24 | 静電チャックの製造方法 |
US11/681,335 US20070223174A1 (en) | 2006-03-24 | 2007-03-02 | Electrostatic chuck and manufacturing method thereof |
TW096109493A TWI335636B (en) | 2006-03-24 | 2007-03-20 | Electrostatic chuck and manufacturing method thereof |
EP07251158.7A EP1837317B1 (en) | 2006-03-24 | 2007-03-20 | Electrostatic chuck and manufacturing method thereof |
KR1020070028674A KR100793679B1 (ko) | 2006-03-24 | 2007-03-23 | 정전 척 및 그 제조 방법 |
CNB2007100894729A CN100474553C (zh) | 2006-03-24 | 2007-03-23 | 静电卡盘及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006081975A JP4590368B2 (ja) | 2006-03-24 | 2006-03-24 | 静電チャックの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007258505A JP2007258505A (ja) | 2007-10-04 |
JP4590368B2 true JP4590368B2 (ja) | 2010-12-01 |
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ID=38121989
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Application Number | Title | Priority Date | Filing Date |
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JP2006081975A Active JP4590368B2 (ja) | 2006-03-24 | 2006-03-24 | 静電チャックの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070223174A1 (ja) |
EP (1) | EP1837317B1 (ja) |
JP (1) | JP4590368B2 (ja) |
KR (1) | KR100793679B1 (ja) |
CN (1) | CN100474553C (ja) |
TW (1) | TWI335636B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6049509B2 (ja) * | 2012-03-28 | 2016-12-21 | 日本碍子株式会社 | セラミックヒーター、ヒーター電極及びセラミックヒーターの製法 |
KR102427144B1 (ko) * | 2014-05-07 | 2022-07-28 | 모간 어드밴스드 세라믹스, 인코포레이티드 | 대형 동시소성 물품의 개선된 제조방법 |
DE102016206193A1 (de) * | 2016-04-13 | 2017-10-19 | Trumpf Gmbh + Co. Kg | Elektroadhäsionsgreifer mit fraktalen Elektroden |
US11376640B2 (en) * | 2018-10-01 | 2022-07-05 | Tokyo Electron Limited | Apparatus and method to electrostatically remove foreign matter from substrate surfaces |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1072260A (ja) * | 1995-11-01 | 1998-03-17 | Ngk Insulators Ltd | 窒化アルミニウム焼結体、金属包含材、静電チャック、窒化アルミニウム焼結体の製造方法および金属包含材の製造方法 |
JP2003055052A (ja) * | 2000-10-23 | 2003-02-26 | Ngk Insulators Ltd | 低体積抵抗材料、窒化アルミニウム焼結体および半導体製造用部材 |
JP2003077995A (ja) * | 2001-09-04 | 2003-03-14 | Taiheiyo Cement Corp | 静電チャック |
JP2003261383A (ja) * | 2002-03-11 | 2003-09-16 | Taiheiyo Cement Corp | 窒化アルミニウム焼結体およびそれを用いた静電チャック |
JP2005294648A (ja) * | 2004-04-01 | 2005-10-20 | Ngk Insulators Ltd | 静電チャックとその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0196067A (ja) * | 1987-10-08 | 1989-04-14 | Nec Corp | 窒化アルミニウム焼結体の製造方法 |
US5705450A (en) * | 1996-12-17 | 1998-01-06 | The Dow Chemical Company | A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body |
JP4013386B2 (ja) * | 1998-03-02 | 2007-11-28 | 住友電気工業株式会社 | 半導体製造用保持体およびその製造方法 |
US6280584B1 (en) * | 1998-07-29 | 2001-08-28 | Applied Materials, Inc. | Compliant bond structure for joining ceramic to metal |
US6607836B2 (en) * | 2000-10-23 | 2003-08-19 | Ngk Insulators, Ltd. | Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors |
JP4386695B2 (ja) * | 2002-11-14 | 2009-12-16 | 日本碍子株式会社 | 窒化アルミニウム焼結体の製造方法 |
-
2006
- 2006-03-24 JP JP2006081975A patent/JP4590368B2/ja active Active
-
2007
- 2007-03-02 US US11/681,335 patent/US20070223174A1/en not_active Abandoned
- 2007-03-20 EP EP07251158.7A patent/EP1837317B1/en not_active Ceased
- 2007-03-20 TW TW096109493A patent/TWI335636B/zh active
- 2007-03-23 KR KR1020070028674A patent/KR100793679B1/ko active IP Right Grant
- 2007-03-23 CN CNB2007100894729A patent/CN100474553C/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1072260A (ja) * | 1995-11-01 | 1998-03-17 | Ngk Insulators Ltd | 窒化アルミニウム焼結体、金属包含材、静電チャック、窒化アルミニウム焼結体の製造方法および金属包含材の製造方法 |
JP2003055052A (ja) * | 2000-10-23 | 2003-02-26 | Ngk Insulators Ltd | 低体積抵抗材料、窒化アルミニウム焼結体および半導体製造用部材 |
JP2003077995A (ja) * | 2001-09-04 | 2003-03-14 | Taiheiyo Cement Corp | 静電チャック |
JP2003261383A (ja) * | 2002-03-11 | 2003-09-16 | Taiheiyo Cement Corp | 窒化アルミニウム焼結体およびそれを用いた静電チャック |
JP2005294648A (ja) * | 2004-04-01 | 2005-10-20 | Ngk Insulators Ltd | 静電チャックとその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200739795A (en) | 2007-10-16 |
EP1837317A2 (en) | 2007-09-26 |
TWI335636B (en) | 2011-01-01 |
EP1837317B1 (en) | 2014-08-20 |
JP2007258505A (ja) | 2007-10-04 |
US20070223174A1 (en) | 2007-09-27 |
KR100793679B1 (ko) | 2008-01-10 |
CN100474553C (zh) | 2009-04-01 |
CN101043016A (zh) | 2007-09-26 |
EP1837317A3 (en) | 2010-04-21 |
KR20070096903A (ko) | 2007-10-02 |
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