CN104969355B - Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置 - Google Patents
Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置 Download PDFInfo
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- CN104969355B CN104969355B CN201480006578.6A CN201480006578A CN104969355B CN 104969355 B CN104969355 B CN 104969355B CN 201480006578 A CN201480006578 A CN 201480006578A CN 104969355 B CN104969355 B CN 104969355B
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- diffusion
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/251—Lateral thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361758590P | 2013-01-30 | 2013-01-30 | |
| US61/758,590 | 2013-01-30 | ||
| PCT/US2014/013671 WO2014120824A1 (en) | 2013-01-30 | 2014-01-29 | Dmos semiconductor device with esd self-protection and lin bus driver comprising the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104969355A CN104969355A (zh) | 2015-10-07 |
| CN104969355B true CN104969355B (zh) | 2018-02-13 |
Family
ID=50102256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480006578.6A Active CN104969355B (zh) | 2013-01-30 | 2014-01-29 | Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9607978B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2951865B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6255421B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20150114982A (cg-RX-API-DMAC7.html) |
| CN (1) | CN104969355B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI614871B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014120824A1 (cg-RX-API-DMAC7.html) |
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| DE102015204924B4 (de) * | 2015-03-18 | 2022-05-25 | Röchling Automotive SE & Co. KG | LIN-Netzwerk |
| US9831340B2 (en) * | 2016-02-05 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and associated fabricating method |
| US10498326B2 (en) * | 2016-03-01 | 2019-12-03 | Texas Instruments Incorporated | Output driver with power down protection |
| JP6740831B2 (ja) * | 2016-09-14 | 2020-08-19 | 富士電機株式会社 | 半導体装置 |
| US9613948B1 (en) * | 2016-09-22 | 2017-04-04 | United Microelectronics Corp. | Electrostatic discharge protection semiconductor device |
| KR102166618B1 (ko) * | 2016-09-26 | 2020-10-16 | 온세미컨덕터코리아 주식회사 | 정전기 방전 회로 및 그 제조 방법 |
| US10600776B2 (en) * | 2017-02-24 | 2020-03-24 | Nxp B.V. | Device and method for electrostatic discharge (ESD) protection |
| WO2019005081A1 (en) * | 2017-06-29 | 2019-01-03 | Intel Corporation | GROUP III NITRIDE TRANSISTOR STRUCTURE WITH INTEGRATED DIODE |
| US10861844B2 (en) * | 2017-08-07 | 2020-12-08 | Texas Instruments Incorporated | ESD device with fast response and high transient current |
| US10453836B2 (en) | 2017-08-17 | 2019-10-22 | Globalfoundries Singapore Pte. Ltd. | High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same |
| TWI777971B (zh) * | 2017-08-28 | 2022-09-21 | 聯華電子股份有限公司 | 雙極性電晶體及其製作方法 |
| US11373995B2 (en) | 2017-09-29 | 2022-06-28 | Intel Corporation | Group III-nitride antenna diode |
| US11545586B2 (en) | 2017-09-29 | 2023-01-03 | Intel Corporation | Group III-nitride Schottky diode |
| US10340266B2 (en) * | 2017-10-02 | 2019-07-02 | Globalfoundries Singapore Pte. Ltd. | ESD protection circuit and method of making the same |
| HK1244177A2 (zh) * | 2018-03-27 | 2018-07-27 | 蒙若贤 | 用於沟道型dmos的集成堆叠在沟道中的防静电网络 |
| CN109786374B (zh) * | 2019-01-07 | 2021-07-13 | 中国科学院微电子研究所 | 一种soi功率开关的esd保护器件 |
| CN109742071B (zh) * | 2019-01-07 | 2021-04-13 | 中国科学院微电子研究所 | 一种soi功率开关的esd保护器件 |
| KR102633136B1 (ko) | 2019-01-10 | 2024-02-02 | 삼성전자주식회사 | 집적회로 칩과 이를 포함하는 집적회로 패키지 및 디스플레이 장치 |
| CN109935581B (zh) * | 2019-02-25 | 2021-04-13 | 中国科学院微电子研究所 | 双向可控硅静电放电保护结构及soi结构 |
| CN109935582B (zh) * | 2019-02-25 | 2021-04-06 | 中国科学院微电子研究所 | 双向可控硅静电放电保护结构及soi结构 |
| CN109962098A (zh) * | 2019-02-25 | 2019-07-02 | 中国科学院微电子研究所 | 双向可控硅静电放电保护结构及soi结构 |
| JP7268408B2 (ja) | 2019-03-06 | 2023-05-08 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置及びその製造方法 |
| CN110289257B (zh) * | 2019-06-28 | 2021-09-14 | 湖南师范大学 | 一种双向增强型栅控可控硅静电保护器件及其制作方法 |
| KR102887191B1 (ko) | 2020-04-16 | 2025-11-17 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN111384046A (zh) * | 2020-04-27 | 2020-07-07 | 上海华力微电子有限公司 | 一种硅控整流器及其制造方法 |
| US10938387B1 (en) | 2020-06-24 | 2021-03-02 | Cypress Semiconductor Corporation | Local interconnect network (LIN) driver circuit |
| CN113345964B (zh) * | 2021-05-17 | 2022-05-10 | 杰华特微电子股份有限公司 | 一种横向双扩散晶体管 |
| KR102820470B1 (ko) * | 2021-05-21 | 2025-06-16 | 삼성전자주식회사 | 반도체 보호 소자 |
| TWI775688B (zh) * | 2021-11-29 | 2022-08-21 | 世界先進積體電路股份有限公司 | 靜電放電防護結構 |
| US12057444B2 (en) * | 2022-06-23 | 2024-08-06 | Globalfoundries U.S. Inc. | Operating voltage-triggered semiconductor controlled rectifier |
| US20240170531A1 (en) * | 2022-11-17 | 2024-05-23 | Globalfoundries U.S. Inc. | Structure with buried doped region and methods to form same |
| US20240332283A1 (en) * | 2023-03-28 | 2024-10-03 | Infineon Technologies Ag | ESD Protection Device |
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| CN101048867A (zh) * | 2004-08-26 | 2007-10-03 | 德州仪器公司 | 双向esd保护电路 |
| CN101826523A (zh) * | 2010-04-14 | 2010-09-08 | 电子科技大学 | 一种栅控二极管触发的可控硅整流式静电释放保护电路结构 |
| WO2013013035A1 (en) * | 2011-07-21 | 2013-01-24 | Microchip Technology Incorporated | Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers |
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-
2014
- 2014-01-29 KR KR1020157023604A patent/KR20150114982A/ko not_active Ceased
- 2014-01-29 US US14/167,331 patent/US9607978B2/en active Active
- 2014-01-29 WO PCT/US2014/013671 patent/WO2014120824A1/en not_active Ceased
- 2014-01-29 CN CN201480006578.6A patent/CN104969355B/zh active Active
- 2014-01-29 JP JP2015555433A patent/JP6255421B2/ja active Active
- 2014-01-29 EP EP14704489.5A patent/EP2951865B1/en active Active
- 2014-02-05 TW TW103103821A patent/TWI614871B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101048867A (zh) * | 2004-08-26 | 2007-10-03 | 德州仪器公司 | 双向esd保护电路 |
| CN101826523A (zh) * | 2010-04-14 | 2010-09-08 | 电子科技大学 | 一种栅控二极管触发的可控硅整流式静电释放保护电路结构 |
| WO2013013035A1 (en) * | 2011-07-21 | 2013-01-24 | Microchip Technology Incorporated | Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016508671A (ja) | 2016-03-22 |
| EP2951865A1 (en) | 2015-12-09 |
| TWI614871B (zh) | 2018-02-11 |
| KR20150114982A (ko) | 2015-10-13 |
| EP2951865B1 (en) | 2020-03-25 |
| US9607978B2 (en) | 2017-03-28 |
| TW201444051A (zh) | 2014-11-16 |
| US20140210007A1 (en) | 2014-07-31 |
| JP6255421B2 (ja) | 2017-12-27 |
| CN104969355A (zh) | 2015-10-07 |
| WO2014120824A1 (en) | 2014-08-07 |
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