JP7268408B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 330
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims description 69
- 239000002344 surface layer Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 93
- 229910021332 silicide Inorganic materials 0.000 description 59
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 59
- 239000012535 impurity Substances 0.000 description 52
- 238000002955 isolation Methods 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 239000011229 interlayer Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- -1 boron ions Chemical class 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Description
先ず、第1の実施形態について説明する。図1Aは、第1の実施形態に係る半導体装置を示す平面図であり、図1B及び図1Cは、第1の実施形態に係る半導体装置を示す断面図である。図1Aは、主として、素子分離絶縁膜、ソース・ドレインの半導体領域、電極及び配線の位置関係を示す。図1Bは、図1A中のI-I線に沿った断面図に相当する。図1Cは、図1A中のII-II線に沿った断面図に相当する。
次に、第2の実施形態について説明する。図3は、第2の実施形態に係る半導体装置を示す平面図である。
次に、第3の実施形態について説明する。図4は、第3の実施形態に係る半導体装置を示す平面図である。
次に、第4の実施形態について説明する。図5Aは、第4の実施形態に係る半導体装置を示す平面図であり、図5B及び図5Cは、第4の実施形態に係る半導体装置を示す断面図である。図5Aは、主として、素子分離絶縁膜、ソース・ドレインの半導体領域、電極及び配線の位置関係を示す。図5Bは、図5A中のI-I線に沿った断面図に相当する。図5Cは、図5A中のII-II線に沿った断面図に相当する。
次に、第5の実施形態について説明する。図6Aは、第5の実施形態に係る半導体装置を示す平面図であり、図6B及び図6Cは、第5の実施形態に係る半導体装置を示す断面図である。図6Aは、主として、素子分離絶縁膜、ソース・ドレインの半導体領域、電極及び配線の位置関係を示す。図6Bは、図6A中のI-I線に沿った断面図に相当する。図6Cは、図6A中のII-II線に沿った断面図に相当する。
次に、第6の実施形態について説明する。図8Aは、第6の実施形態に係る半導体装置を示す平面図であり、図8B及び図8Cは、第6の実施形態に係る半導体装置を示す断面図である。図8Aは、主として、素子分離絶縁膜、ソース・ドレインの半導体領域、電極及び配線の位置関係を示す。図8Bは、図8A中のI-I線に沿った断面図に相当する。図8Cは、図8A中のII-II線に沿った断面図に相当する。
半導体基板と、
前記半導体基板の上方に設けられ、第1の方向に延びるゲート電極と、
前記半導体基板の上方に前記ゲート電極から離間して設けられ、前記第1の方向に延びるダミーゲート電極と、
前記ゲート電極と前記ダミーゲート電極との間で前記半導体基板の表層部に設けられた第1導電型の第1の半導体領域と、
前記第1の半導体領域と前記ダミーゲート電極とを電気的に接続する導電体と、
を有することを特徴とする半導体装置。
(付記2)
前記ダミーゲート電極は、少なくとも、前記ゲート電極の前記第1の半導体領域の上方の部分の全体の側方に設けられていることを特徴とする付記1に記載の半導体装置。
(付記3)
前記ゲート電極と前記ダミーゲート電極との間の距離が、前記ゲート電極の前記第1の半導体領域の上方の部分の全体にわたって一定であることを特徴とする付記1又は2に記載の半導体装置。
(付記4)
前記ゲート電極及び前記ダミーゲート電極を覆う絶縁膜を有し、
前記導電体は、前記絶縁膜に形成されたコンタクトホール内に形成され、前記第1の半導体領域の上面及び前記ダミーゲート電極の上面に連続的に接し、かつ電気的に接続された導電プラグを有することを特徴とする付記1乃至3のいずれか1項に記載の半導体装置。
(付記5)
前記導電プラグは平面視で前記第1の方向に直交する第2の方向の長さが前記第1の方向の長さよりも長い形状を有することを特徴とする付記4に記載の半導体装置。
(付記6)
前記半導体基板の表層部に設けられ、素子活性領域を画定する素子分離領域を有し、
前記ゲート電極は、前記素子分離領域の上方に位置する第1の電極パッドを有し、
前記ダミーゲート電極は、前記素子分離領域の上方に位置する第2の電極パッドを有し、
前記第1の電極パッドと前記第2の電極パッドとは、前記第1の方向において、前記素子活性領域からみて逆側に位置することを特徴とする付記1乃至5のいずれか1項に記載の半導体装置。
(付記7)
前記半導体基板の表層部に設けられ、素子活性領域を画定する素子分離領域を有し、
前記ゲート電極は、前記素子分離領域の上方に位置する第1の電極パッドを有し、
前記ダミーゲート電極は、前記素子分離領域の上方に位置する第2の電極パッドを有し、
前記第1の電極パッドと前記第2の電極パッドとは、前記第1の方向において、前記素子活性領域からみて同じ側に位置することを特徴とする付記1乃至5のいずれか1項に記載の半導体装置。
(付記8)
前記第1の電極パッドと前記素子活性領域との間の距離と、前記第2の電極パッドと前記素子活性領域との間の距離とが相違していることを特徴とする付記7に記載の半導体装置。
(付記9)
前記ゲート電極の下方で、前記半導体基板の表層部に設けられたノンドープの第2の半導体領域と、
前記第2の半導体領域の下に設けられた第2導電型の第3の半導体領域と、
を有することを特徴とする付記1乃至8のいずれか1項に記載の半導体装置。
(付記10)
前記ダミーゲート電極が2本設けられ、
前記ゲート電極は2本の前記ダミーゲート電極の間に設けられていることを特徴とする付記1乃至9のいずれか1項に記載の半導体装置。
(付記11)
2本以上の前記ゲート電極が2本の前記ダミーゲート電極の間に設けられていることを特徴とする付記10に記載の半導体装置。
(付記12)
半導体基板の上方に、第1の方向に延びるゲート電極と、
前記半導体基板の上方に前記ゲート電極から離間して、前記第1の方向に延びるダミーゲート電極を形成する工程と、
前記ゲート電極と前記ダミーゲート電極との間で前記半導体基板の表層部に第1導電型の第1の半導体領域を形成する工程と、
前記第1の半導体領域と前記ダミーゲート電極とを電気的に接続する導電体を形成する工程と、
を有し、
前記ゲート電極を形成する工程及び前記ダミーゲート電極を形成する工程は、前記ゲート電極用のパターン及び前記ダミーゲート電極用のパターンが形成された一つの露光マスクを用いたフォトレジストの露光及び前記フォトレジストの現像を行う工程を有することを特徴とする半導体装置の製造方法。
(付記13)
前記ダミーゲート電極は、少なくとも、前記ゲート電極の前記第1の半導体領域の上方の部分の全体の側方に形成することを特徴とする付記12に記載の半導体装置の製造方法。
(付記14)
前記ゲート電極と前記ダミーゲート電極との間の距離が、前記ゲート電極の前記第1の半導体領域の上方の部分の全体にわたって一定であることを特徴とする付記12又は13に記載の半導体装置の製造方法。
(付記15)
前記ゲート電極及び前記ダミーゲート電極を覆う絶縁膜を形成する工程を有し、
前記導電体を形成する工程は、
前記絶縁膜にコンタクトホールを形成する工程と、
前記コンタクトホール内に前記第1の半導体領域及び前記ダミーゲート電極に電気的に接続される導電プラグを形成する工程と、
を有することを特徴とする付記12乃至14のいずれか1項に記載の半導体装置の製造方法。
(付記16)
前記ゲート電極の下方で、前記半導体基板の表層部にノンドープの第2の半導体領域を形成する工程と、
前記第2の半導体領域の下に第2導電型の第3の半導体領域を形成する工程と、
を有することを特徴とする付記12乃至15のいずれか1項に記載の半導体装置の製造方法。
101、201:半導体基板
102、202:素子分離絶縁膜
103、203:pウェル
104、204:p型半導体領域
105、105A、105D、105S、106、106D、106S、205D、205S、206D、206S:n型半導体領域
108、208:ゲート電極
108A、109A、109DA、209DA:電極パッド
109、109D、109S、209D、209S、409D:ダミーゲート電極
112、112A、112D、112S、113、113A、113D、212S、212D、412D:導電プラグ
114A、114S、114D、214S、214D、414D:配線
220:シリコン層
Claims (12)
- 半導体基板と、
前記半導体基板の上方に設けられ、第1の方向に延びるゲート電極と、
前記半導体基板の上方に前記ゲート電極から離間して設けられ、前記第1の方向に延びる第1のダミーゲート電極と、
前記半導体基板内で、前記第1のダミーゲート電極の下方に設けられた第1導電型の第1の半導体領域と、
前記ゲート電極と前記第1のダミーゲート電極との間で前記半導体基板の表層部に設けられた、前記第1導電型とは異なる第2導電型の第2の半導体領域と、
前記第2の半導体領域と前記第1のダミーゲート電極とを電気的に接続する導電体と、
を有することを特徴とする半導体装置。 - 第1の電圧が前記第1の半導体領域に印加され、第2の電圧がn導電型である前記第2の半導体領域に印加され、前記第2の電圧は前記第1の電圧よりも高い、又は
第3の電圧が前記第1の半導体領域に印加され、第4の電圧がp導電型である前記第2の半導体領域に印加され、前記第4の電圧は前記第3の電圧よりも低いことを特徴とする請求項1に記載の半導体装置。 - 前記半導体基板の上方に前記ゲート電極から離間して且つ前記第1のダミーゲート電極の反対側に設けられ、前記第1の方向に延びる第2のダミーゲート電極と、
前記ゲート電極と前記第2のダミーゲート電極との間で前記半導体基板の表層部に設けられた前記第2導電型の第3の半導体領域と、をさらに有しており、
前記第3の半導体領域は、前記第2のダミーゲート電極から電気的に分離されることを特徴とする請求項1又は2に記載の半導体装置。 - 前記第1のダミーゲート電極は、少なくとも、前記ゲート電極の前記第2の半導体領域の上方の部分の全体の側方に設けられていることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記ゲート電極と前記第1のダミーゲート電極との間の距離が、前記ゲート電極の前記第2の半導体領域の上方の部分の全体にわたって一定であることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記ゲート電極及び前記第1のダミーゲート電極を覆う絶縁膜を有し、
前記導電体は、前記絶縁膜に形成されたコンタクトホール内に形成され、前記第2の半導体領域の上面及び前記第1のダミーゲート電極の上面に連続的に接し、かつ電気的に接続された導電プラグを有することを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記ゲート電極の下方で、前記半導体基板の表層部に設けられたノンドープの第4の半導体領域と、
前記第4の半導体領域の下に設けられた前記第1導電型の第5の半導体領域と、
を有することを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置。 - 半導体基板の上方に、第1の方向に延びるゲート電極と、
前記半導体基板の上方に前記ゲート電極から離間して、前記第1の方向に延びるダミーゲート電極を形成する工程と、
前記半導体基板内で、前記ダミーゲート電極の下方に第1導電型の第1の半導体領域を形成する工程と、
前記ゲート電極と前記ダミーゲート電極との間で前記半導体基板の表層部に、前記第1導電型とは異なる第2導電型の第2の半導体領域を形成する工程と、
前記第2の半導体領域と前記ダミーゲート電極とを電気的に接続する導電体を形成する工程と、
を有し、
前記ゲート電極を形成する工程及び前記ダミーゲート電極を形成する工程は、前記ゲート電極用のパターン及び前記ダミーゲート電極用のパターンが形成された一つの露光マスクを用いたフォトレジストの露光及び前記フォトレジストの現像を行う工程を有することを特徴とする半導体装置の製造方法。 - 前記ダミーゲート電極は、少なくとも、前記ゲート電極の前記第2の半導体領域の上方の部分の全体の側方に形成することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記ゲート電極と前記ダミーゲート電極との間の距離が、前記ゲート電極の前記第2の半導体領域の上方の部分の全体にわたって一定であることを特徴とする請求項8又は9に記載の半導体装置の製造方法。
- 前記ゲート電極及び前記ダミーゲート電極を覆う絶縁膜を形成する工程を有し、
前記導電体を形成する工程は、
前記絶縁膜にコンタクトホールを形成する工程と、
前記コンタクトホール内に前記第1の半導体領域及び前記ダミーゲート電極に電気的に接続される導電プラグを形成する工程と、
を有することを特徴とする請求項8乃至10のいずれか1項に記載の半導体装置の製造方法。 - 前記ゲート電極の下方で、前記半導体基板の表層部にノンドープの第3の半導体領域を形成する工程と、
前記第3の半導体領域の下に前記第1導電型の第4の半導体領域を形成する工程と、
を有することを特徴とする請求項8乃至11のいずれか1項に記載の半導体装置の製造方法。
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