CN103649367A - 半导体制造装置的原料气体供给装置 - Google Patents
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Abstract
本发明包括:液体原料气体供给源;源储罐,其储存所述液体原料气体;气体流通路,其从所述源储罐的内部上方空间部向处理腔供给为液体原料气体蒸汽的原料气体;自动压力调整器,其间置于该气体流通路的上游侧,且将向处理腔供给的原料气体的供给压力保持为设定值;供给气体切换阀,其间置于所述气体流通路的下游侧,且对向处理腔供给的原料气体的通路进行开闭;节流孔,其设于该供给气体切换阀的入口侧和出口侧中的至少一方,且调整向处理腔供给的原料气体的流量;以及恒温加热装置,其将所述源储罐、所述气体流通路和供给气体切换阀以及节流孔加热至设定温度,在本发明中,将自动压力调整器下游侧的原料气体的供给压力控制为所期望的压力,并且向处理腔供给设定流量的原料气体。
Description
技术领域
本发明涉及对基于所谓ALD法的半导体制造装置的气体供给装置的改良,涉及能够对处理腔内以高精度流量控制多个处理用气体(原料气体),并且迅速且正确地进行切换供给的半导体制造装置的原料气体供给装置。
背景技术
所谓ALD(原子层沉积:Atomic layer Deposition)法由于其良好的热历史、阶梯差被覆性而被广泛地活用于半导体制造的成膜处理。
如此,该ALD法向处理腔内交替地供给两种以上的原料气体、液体原料气体的蒸汽流,通过晶片等的表面处的化学反应而成膜,能够以所谓一个序列(sequence)高精度地形成相当于1个原子层的膜厚。
其中,将四氯化钛(TiCl4)与氨(NH3)用作前驱体的氮化钛(TiN)的成膜是半导体制造中重要的处理,四氯化钛(TiCl4)的供给流量的控制精度对氮化钛的膜厚、其品质造成较大的影响。
因此,一直以来,关于四氯化钛(TiCl4)等原料气体的供给,开发有各种技术,例如,在图4的原料气体供给装置(日本特许第4605790号)中,从载体气体源21通过压力调整器22、质量流量控制器23向源储罐25内供给载体气体G1’,液体原料24的蒸汽G2’与载体气体G1’的混合气体G0’通过压力控制阀CV以及开闭阀V1向处理腔29内供给,利用压力控制阀CV以及开闭阀V1的开闭控制来控制气体G0’的向处理腔29的供给。
此外,在图4中,27是源储罐25的内压部压力的自动压力调整装置,根据管路L内的压力以及温度的检测值计算储罐内压,向与从端子28输入的设定压力之差成为零的方向对压力控制阀CV进行开闭控制,从而将源储罐内压保持为设定值。
另外,26是恒温加热部,30是加热器,31是晶片,Gn’是其他原料气体,Vn是其他原料气体Gn’的开闭阀。
在上述图4的原料气体供给装置中,首先向源储罐25内供给的载体气体G1’的压力利用压力调整器22而设定为既定压力值PG1,另外,其供给流量利用热式质量流量控制装置(质量流量控制器)23而设定为既定流量值。而且,源储罐25的部分等被加热保持于约150℃的高温。
载体气体G1’的供给量、源储罐25的温度、和源储罐25的内部压力(混合气体G0’的压力)各自保持为设定值,从而通过压力控制阀CV,定混合比且定流量的混合气体G0’被以高精度控制为与热式质量流量控制装置23的设定流量成比例的既定流量值且进行供给,通过打开开闭阀V1而向处理腔29供给。
图5示出此种原料气体供给装置的其他示例,利用载体气体G1’的鼓泡(bubbling)作用使源储罐25内的液体原料气体(TiCl4)蒸发,并且使载体气体G1’、原料气体蒸汽G2’、与伴随载体气体的原料气体粒子的混合体G0流入气化器35,将气化的混合气体G0’通过缓冲储罐33并向阀开闭机构34供给,利用阀V1的开闭控制(开关控制),向腔29内供给既定量的混合气体G0’。
此外,在图5中,各自地,所述源储罐25内的液体原料气体(TiCl4)24被加热至约100℃(蒸汽压269Torr),气化器35被加热至约200℃,各缓冲腔33(内容积约500~1000cc)被加热至约170℃,阀开闭机构34被加热至约200℃。
另外,混合气体(TiCl4+载体气体)G0’的供给流量约为20sccm,氩(Ar)以及氨(NH3)的供给压力为0.15PaG,供给流量各自约为10SLM。而且,处理腔29的内容积为500~1000cc,内压保持于1Torr以下。
在向所述腔29供给原料气体时,通过依次以既定时间间隔开、关(例如,在TiCl4的情况下开时间约0.2秒,闭时间约0.93秒)阀开闭机构34内的开闭阀V1~Vn,对于以既定的内压储存于各缓冲储罐33内的原料气体,依次供给各既定量的各原料气体,以进行一个循环的成膜。
在上述图4所示的气体供给装置中,由于利用源储罐内自动压力调整装置27将源储罐25内的空间部压力(混合气体G0’的压力)保持为设定值,故即使不使用缓冲储罐33,也能够以高精度对既定量的原料气体G0’进行流量控制并且向阀开闭机构(开闭阀V1)34供给。
另外,在图5的原料气体供给装置中,由于使用缓冲储罐33,故所供给的各原料气体G0’、GAr、GNH3的压力波动全部消除,也能够使既定流量的各原料气体通过阀开闭机构34并向腔29内供给,实现优秀的效用。
但是,在以往的图4以及图5所示的气体供给装置中也残留有众多应解决的问题点。
首先,在图4以及图5的气体供给装置中,由于使用载体气体G1’将液体原料气体24的蒸汽G2’作为原料气体向处理腔29供给,故不能够仅仅将液体原料气体24的蒸汽G2’直接向处理腔29供给,其结果,混合气体G0’内的原料气体G2’的浓度管理费事,存在难以进行高精度的原料气体G2’的供给量控制的问题。
另外,在图4的气体供给装置中,存在:1. 由于使用高价的热式质量流量控制装置23,故难以谋求原料的气化供给装置的制造成本降低,而且需要高精度控制去往热式质量流量控制装置23的载体气体供给压力,压力调整器22的设备费用增加,不能够利用热式质量流量控制装置23直接控制混合气体G0’的流量,3. 由于为鼓泡方式,故在固体原料、低蒸汽压原料的情况下难以稳定地供给原料蒸汽,向处理腔的混合气体供给容易变得不稳定,4. 根据源储罐内原料液面的波动,混合气体G0’内的原料蒸汽G2’的浓度较大地波动,难以控制原料蒸汽G2’的浓度,5. 由于入口侧的载体气体的流量与出口侧的混合气体流量(总流量)不同,故难以进行混合气体流量的高精度流量控制,6. 不容易进行源储罐内压的高精度控制,作为结果,不容易进行与储罐内混合气体内的原料蒸汽的分压力直接关联的原料浓度的调整,等问题。
而且,在图5的气体供给装置中,除所述图4的气体供给装置中的1~6等问题之外,还存在如下问题,即,由于为将设于开关机构34的开闭阀V1作为脉冲驱动阀,并通过调整其开闭切换时间来控制原料气体G0’供给量的构成,故不仅难以进行高精度的流量控制,而且开闭阀V1的保养管理需要较多的劳力,而且,为了谋求原料气体G0’的供给压力的稳定化,需要缓冲腔33,因而无法谋求装置的小型化。
现有技术文献
专利文献
专利文献1:日本特许第4605790号;
专利文献2:日本特开2009-226408号。
发明内容
发明要解决的问题
本发明用于解决以往的图4以及图5气体供给装置中的如上所述的问题,即:1. 不能够仅仅对原料气体单独地且以高精度进行流量控制并且稳定供给,2. 由于为利用设于处理腔最近处的脉冲驱动阀的开闭控制来控制原料气体的供给流量的构成,故难以进行高精度的流量控制,3. 由于使用缓冲腔、或者使用热式流量控制装置,故难以实现原料气体供给装置的大幅的小型化、低成本化,等问题,提供如下原料气体供给装置,其能够在不使用载体气体的情况下仅仅对原料气体单独地,并且在不使用热式流量控制装置、流量控制用脉冲阀的情况下,通过利用设于原料气体通路内的自动压力调整装置调整次级侧气体流通路内的原料气体压力并且使用节流孔,从而以高精度进行流量控制并且稳定地进行原料气体的供给。
用于解决问题的方案
权利要求1的发明的发明基本构成为包括:液体原料气体供给源;源储罐,其储存所述液体原料气体;气体流通路,其从所述源储罐的内部上方空间部向处理腔供给为液体原料气体蒸汽的原料气体;自动压力调整器,其间置于该气体流通路的上游侧,且将向处理腔供给的原料气体的供给压力保持为设定值;供给气体切换阀,其间置于所述气体流通路的下游侧,且对向处理腔供给的原料气体的通路进行开闭;节流部,其设于该供给气体切换阀的入口侧和出口侧中的至少一方,且调整向处理腔供给的原料气体的流量;以及恒温加热装置,其将所述源储罐、所述气体流通路和供给气体切换阀以及节流部加热至设定温度,将自动压力调整器的下游侧的原料气体的供给压力控制为所期望的压力,并且向处理腔供给设定流量的原料气体。
权利要求2的发明是在权利要求1的发明中,使液体原料气体为四氯化钛(TiCl4)的发明。
权利要求3的发明是在权利要求1的发明中,将节流部设于供给气体切换阀的入口侧的发明。
权利要求4的发明是在权利要求1的发明中,利用恒温加热装置将源储罐加热至100℃~250℃的温度的发明。
权利要求5的发明是在权利要求1的发明中,利用恒温加热装置将气体流通路、自动压力调整装器、节流部以及切换阀加热至100℃~250℃的温度的发明。
权利要求6的发明是在权利要求1的发明中,与原料气体的气体流通路并列地,各自设置供给氩气的气体流通路和供给氨气的气体流通路的发明。
发明的效果
在本发明中,采用如下构成,即,将源储罐的温度保持为设定值,并且利用自动压力调整装置控制从源储罐内部上方空间导出的原料气体G1的对处理腔的供给压力,将自动压力调整装置的次级侧气体流通路内的原料气体压力保持为所期望的设定压力,并且经由节流部向处理腔供给原料气体G1,原料气体G1为液体原料气体的蒸汽。
其结果,能够在不使用载体气体的情况下仅仅将液体原料气体G1以高精度进行流量控制并且进行供给,能够实现原料气体G1的稳定供给,并且流量控制性大幅提高。
另外,原料气体G1的流通路为包括自动压力调整装置、节流部、和供给气体切换阀的简单构成,能够实现半导体制造装置的原料气体供给装置的大幅小型化,并且液体原料气体使用量的判别变得容易,而且利用节流孔有效地防止原料气体的供给切换时的不同种气体的倒流。
而且,通过利用自动压力调整装置将原料气体G1的供给压力保持为一定且适当地选定节流部口径,并且进行源储罐、原料气体G1的温度调整,能够以极高的精度控制原料气体G1的供给流量,能够实现所谓成膜工序的高性能化、半导体产品的大幅的品质提高。
附图说明
图1是示出本发明的实施方式所涉及的原料气体供给装置的构成的系统图。
图2是自动压力调整装置的构成说明图。
图3是示出本发明的实施方式所涉及的原料气体供给线路的压力、温度、流量等的一例的图。
图4是示出以往的原料气体供给装置的构成的系统图。
图5是示出以往的其他原料气体供给装置的构成的系统图。
具体实施方式
以下,基于附图说明本发明的实施方式。
图1是本发明的实施方式所涉及的原料气体供给装置的构成系统图,该原料气体供给装置由下列部分等构成:液体原料储罐1;液体原料流量计2;液体原料供给阀3;液体原料气体4;源储罐5;原料气体出口阀7;自动压力调整装置6,其控制向处理腔11供给的原料气体流通路9的内部压力;节流部(在此,使用节流孔(orifice))8,其调整向处理腔11供给的气体G的供给流量;气体流通路9;供给气体切换阀10;恒温加热装置15,其对气体流通路9、源储罐5等进行加热。
此外,在图1中,除液体原料储罐1之外,设有氨气储罐1G2、氩气储罐1G3、其他气体储罐1Gn,在各气体流通路9G2、9G3、9Gn各自设有自动压力调整器6G2、6G3、6Gn、节流孔8G2、G3、8Gn、供给切换阀10G2、10G3、10Gn,原料气体G1、G2、G3、Gn各自向处理腔7进行切换供给。
参照图1,液体原料气体4从液体原料储罐1通过流量计2、液体原料供给阀3向源储罐5内供给,在此在利用恒温加热装置15加热至既定温度的状态下储存。
此外,在本实施例中,作为液体原料气体的一种而使用四氯化钛(TiCl4),以下将液体原料气体4作为TiCl4进行说明。
通过将源储罐加热至约100℃~110℃,源储罐5内的液体原料气体4生成该加热温度下的液体原料气体4的饱和蒸汽压(例如100℃、269Torr)的蒸汽G1,并充满源储罐5的内部上方空间5a内。
所生成的液体原料气体4的饱和蒸汽G1通过原料气体出口阀7并向自动压力调整器6G1流入,由自动压力调整器6G1调整为既定的设定压力,并通过节流孔8G1、原料气体供给切换阀10G1向处理腔11供给。
所述自动压力调整器6G1设于来自源储罐5的原料气体G1的出口侧附近,用于将来自源储罐5内的原料气体G1在自动压力调整器6G1的次级侧处的压力自动调整为既定设定值。即,如图2所示,检测自动压力调整器6G1的流出侧的原料气体G1的压力P1以及温度T1,并且使用该检测压力P1以及温度T1在运算控制部12中进行温度补偿,从而进行补偿为实际的高温混合气体G1的压力的运算,而且,将该运算的原料气体G1的压力值Pt与来自设定输入端子13的设定压力值Ps进行对比,向两者的偏差Pd成为零的方向控制控制阀V0的开闭。
此外,图2示出自动压力调整器6G1的框构成,其运算控制部12由温度补偿电路12a、比较电路12b、输入输出电路12c以及输出电路12d等构成。
即,来自压力检测器P1以及温度检测器T1的检测值转换为数字信号并输入温度补偿电路12a、在此检测压力P1被补偿为检测压力Pt,随后输入比较电路12b。另外,设定压力的输入信号Ps从端子13输入,在利用输入输出电路12b转换为数字值之后输入比较电路12b,在此在比来自所述温度补偿电路12a的温度补偿后的检测压力Pt大的情况下,向控制阀V0的驱动部输出控制信号Pd。由此,控制阀V0被向封闭方向驱动,且被向闭阀方向驱动直到设定压力输入信号Ps与温度补偿后的检测压力Pt之差Pd=Ps-Pt变为零。
另外,相反地,在所述设定压力输入信号Ps比温度补偿后的检测压力Pt小的情况下,向控制阀V0的驱动部输出控制信号Pd,控制阀V0被向开阀方向驱动。由此,直到两者之差Ps-Pt变为零为止,向开阀方向的驱动连续。
利用自动压力调整器6G1,其次级侧的气体压力保持为设定压力的原料气体G1在节流孔8G1处以与原料气体G1的设定压力、节流孔8G1的口经、和气体温度对应的既定流量通过供给气体切换阀10G1向处理腔11供给。
此外,虽然在上述说明中,仅仅说明了原料气体G1的气体流通路9G1的线路,但是气体流通路9G2、气体流通路9G3等的线路若除了源储罐5的部分,则也与所述气体流通路9G1的情况完全相同。
另外,虽然在上述说明中,将节流孔8设于供给气体切换阀10的上游侧,但是也可以将节流孔8设于供给气体切换阀10的下游侧,或者还可以设于下游侧与上游侧双方。
而且,虽然作为液体原料气体使用四氯化钛,但是当然还可以是其他液体原料,例如TEOS等,基于恒温加热装置15的源储罐5、气体流通路9、供给气体切换阀10的加热温度根据所使用的液体原料气体的饱和蒸汽压、原料气体的必要流量以及压力而适当地选定。
在本发明中,利用自动压力调整装置6将其次级侧的原料气体的压力以及温度保持为设定值,并且通过节流孔8调整其流量,因而完全不需要像从前那样进行供给气体切换阀10的开度控制以进行流量调整,只要单纯地进行供给气体的切换即可。因而,能够进行更高精度的流量控制。
另外,在本发明中,能够仅仅将必要的原料直接且在高精度的流量控制下向处理腔11供给,能够谋求原料气体流通路9等的小口径化、简化,并且不需要原料气体的浓度管理。
图3示出在设原料气体为TiCl4,并且设TiCl4气体的流量为10sccm的情况下的包含自动压力调整器6G1等的气体流通路9G1的压力、温度、流量等的关系,确认了通过设源储罐温度=100℃,源储罐内部空间5a的TiCl4气体压力=269Torr(100℃),自动压力调整器6G1的上游侧压力P1=269Torr,自动压力调整器6G1的下游侧压力P2=200Torr,节流孔8G1的口径0.1mmφ,能够实现10sccm的TiCl4气体的供给。此外,设节流孔8G1与供给气体切换阀10G1之间的距离L2为10mm以下,另外,设自动压力调整装置6G1与节流孔8G1之间的距离L1为约2m。
此外,由于TiCl4气体的流量为温度的函数,故通过调节自动压力调整装置6G1的次级侧控制压力P2,能够进行原料气体G1的流量调整。
利用同样的方法,对于NH3气体流通路9G2,也研究了设NH3气体G2=10SLM的情况。其结果,在设自动压力调整器6G2的控制压力P2=790Torr,温度23℃、节流孔8G2的口径=1.0mm时,能够供给约流量10SLM的NH3原料气体G2(当节流孔下游压力相对于P2而满足临界膨胀条件时)。
另外,对于Ar气体流通路9G2,在设压力调整器6G3的控制压力P2=1100Torr,温度23℃、节流孔8G3的口径=1.0mm时,也能够供给约流量10SLM的Ar气体G3(当节流孔下游压力相对于P2而满足临界膨胀条件时)。
产业上的利用可能性
本发明不仅作为用于ALD法的原料的气化供给装置,还能够适用于在半导体制造装置、化学品制造装置等中从加压储存源向处理腔供给气体的构成的全部气体供给装置。
符号说明
G1 原料气体
G2 氨气
G3 氩气
Gn 其他气体
1 流体原料气体储罐(四氯化钛)
1G2 氨气储罐
1G3 氩气储罐
1Gn 其他种类气体的储罐
2 液体原料流量计
3 液体原料供给阀
4 液体原料气体(四氯化钛、TiCl4)
5 源储罐
5a 源储罐的内部空间
6 自动压力调整装置
6G1 四氯化钛气体的自动压力调整器
6G2 氨气的自动压力调整器
6G3 氩气的自动压力调整器
7 原料气体出口阀
7G2 氨气出口阀
7G3 氩气出口阀
7Gn 其他气体出口阀
8 节流部(节流孔)
8G1 四氯化气体的节流孔
8G2 氨气的节流孔
8G3 氩气的节流孔
8Gn 其他气体的节流孔
9 气体流通路
9G1 四氯化钛气体流通路
9G2 氨气流通路
9G3 氩气流通路
9Gn 其他气体的流通路
10 供给气体切换阀
11 处理腔
12 运算控制部
12a 温度补偿电路
12b 比较电路
12c 输入输出电路
12d 输出电路
V0 控制阀
13 设定输入端子
14 输出信号端子
15 恒温加热装置
P1 G1的压力(检测压力)
T1 G1的温度(检测温度)
Pt 补偿检测压力
Tt 补偿检测温度
Ps 设定压力输入信号
Pd 控制信号
Pot 输出信号
21 载体气体源
22 压力调整器
23 质量流量控制器
24 液体原料气体(TiCl4)
25 源储罐
26 恒温加热部
27 源储罐内压自动压力调整装置
28 端子
29 处理腔
30 加热器
31 晶片
32 真空泵
33 缓冲腔
34 阀开闭机构
35 气化器
G1’ 载体气体
G2’ 液体原料的蒸汽
G0’ 混合气体
Gn’ 其他原料气体
Cv 压力控制阀
V1、V2、V3 开闭阀
Vn 管路
Go 混合体。
Claims (6)
1. 一种半导体制造装置的原料气体供给装置,其特征在于,构成为包括:液体原料气体供给源;源储罐,其储存所述液体原料气体;气体流通路,其从所述源储罐的内部上方空间部向处理腔供给为液体原料气体蒸汽的原料气体;自动压力调整器,其间置于该气体流通路的上游侧,且将向处理腔供给的原料气体的供给压力保持为设定值;供给气体切换阀,其间置于所述气体流通路的下游侧,且对向处理腔供给的原料气体的通路进行开闭;节流部,其设于该供给气体切换阀的入口侧和出口侧中的至少一方,且调整向处理腔供给的原料气体的流量;以及恒温加热装置,其将所述源储罐、所述气体流通路和供给气体切换阀以及节流部加热至设定温度,将自动压力调整器的下游侧的原料气体的供给压力控制为所期望的压力,并且向处理腔供给设定流量的原料气体。
2. 根据权利要求1所述的半导体制造装置的原料气体供给装置,其中,使液体原料气体为四氯化钛(TiCl4)。
3. 根据权利要求1所述的半导体制造装置的原料气体供给装置,其中,将节流部设于供给气体切换阀的入口侧。
4. 根据权利要求1所述的半导体制造装置的原料气体供给装置,其中,利用恒温加热装置将源储罐加热至100℃~250℃的温度。
5. 根据权利要求1所述的半导体制造装置的原料气体供给装置,其中,利用恒温加热装置将气体流通路、自动压力调整器、节流部以及切换阀加热至100℃~250℃的温度。
6. 根据权利要求1所述的半导体制造装置的原料气体供给装置,其中,与原料气体的气体流通路并列地,各自设置供给氩气的气体流通路和供给氨气的气体流通路。
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CN113375053A (zh) * | 2020-02-25 | 2021-09-10 | Kc股份有限公司 | 气体混合供应装置、混合系统及气体混合供应方法 |
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CN103649367B (zh) | 2015-12-02 |
WO2013008372A1 (ja) | 2013-01-17 |
KR20140005314A (ko) | 2014-01-14 |
US20140190581A1 (en) | 2014-07-10 |
JP5755958B2 (ja) | 2015-07-29 |
US9556518B2 (en) | 2017-01-31 |
TW201308483A (zh) | 2013-02-16 |
JP2013019003A (ja) | 2013-01-31 |
KR101567357B1 (ko) | 2015-11-09 |
TWI525734B (zh) | 2016-03-11 |
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