JP5050739B2 - 有機金属化合物供給容器 - Google Patents
有機金属化合物供給容器 Download PDFInfo
- Publication number
- JP5050739B2 JP5050739B2 JP2007225595A JP2007225595A JP5050739B2 JP 5050739 B2 JP5050739 B2 JP 5050739B2 JP 2007225595 A JP2007225595 A JP 2007225595A JP 2007225595 A JP2007225595 A JP 2007225595A JP 5050739 B2 JP5050739 B2 JP 5050739B2
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- JP
- Japan
- Prior art keywords
- organometallic compound
- container
- carrier gas
- carrier
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 150000002902 organometallic compounds Chemical class 0.000 title claims description 92
- 239000012159 carrier gas Substances 0.000 claims description 67
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000001947 vapour-phase growth Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XLEXIQLVSDCJLI-UHFFFAOYSA-N C(C)[Zn]C1C=CC=C1 Chemical compound C(C)[Zn]C1C=CC=C1 XLEXIQLVSDCJLI-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PBVXVCFKFWQRQN-UHFFFAOYSA-N [Zn].[CH]1C=CC=C1 Chemical compound [Zn].[CH]1C=CC=C1 PBVXVCFKFWQRQN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- FOJZPLNOZUNMJO-UHFFFAOYSA-M chloro(dimethyl)indigane Chemical compound [Cl-].C[In+]C FOJZPLNOZUNMJO-UHFFFAOYSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- DJYALRJDNXBDCR-UHFFFAOYSA-M ethane;iodozinc(1+) Chemical compound [CH2-]C.I[Zn+] DJYALRJDNXBDCR-UHFFFAOYSA-M 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- YSTQWZZQKCCBAY-UHFFFAOYSA-L methylaluminum(2+);dichloride Chemical compound C[Al](Cl)Cl YSTQWZZQKCCBAY-UHFFFAOYSA-L 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- BSRUTWLOBPCVAB-UHFFFAOYSA-N trimethylindigane;trimethylphosphane Chemical compound CP(C)C.C[In](C)C BSRUTWLOBPCVAB-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
担体の形状は特に限定されるものではなく、不定形状、球状、繊維状、網状、コイル状、円管状等各種形状のものが使用される。
担体は比表面積が大きい方が好ましく、担体表面が平滑なものより約100〜2000μm程度の微細な凹凸を有するもの、あるいは担体自身に多数の気孔(空隙)を有するものが好ましい。このような担体としてはアルミナボール、ラシヒリング、ヘリパック、ディクソンパッキン、ステンレス焼結エレメント、グラスウール等が挙げられる。
容器の底部とキャリアガス導出管の先端部5との間隔は約2〜15mm、好ましくは約2〜10mm、さらに好ましくは2〜5mmである。約15mmより大きくなると有機金属化合物の使用率が低下するので好ましくない。
(容器A)
図1に模式的に示したと同様に容器の天板に、キャリアガス導入管2、キャリアガス導出管4、担体および有機金属化合物の投入口を配設した内容積800mlのステンレス製容器(湾曲状の底部)を用いた。キャリアガス導入管の先端部は、図2(A)に示すように、容器天板7の部分の開口部に直径18mmの円盤状の邪魔板3’を天板との間隔を約3mmとして天板に対し水平に取り付けて構成した。また、容器の底部とキャリアガス導出管の先端部5との間隔は3mmとした。
(容器B)
キャリアガス導入管2の先端部3が図4に示すような容器天板に対して鉛直方向を向いており、キャリアガス導入管2の先端部3が容器天板内壁面の面位置に位置するように配設した以外は容器Aと同様の容器を用いた。
水素ボンベ、流量制御装置、上記の担体担持有機金属化合物を充填した有機金属化合物供給容器、ガス濃度計、トリメチルインジウム捕集用深冷トラップ、圧力制御装置および真空ポンプをこの順序に接続した(図示せず)。
供給容器は恒温槽に入れ、25℃に保持した。ガス濃度計としてエピソン濃度計(トーマス スワン サイエンティフィック イクイップメント社製)を用いた。
担体担持有機金属化合物を充填した容器Aについて、キャリアガス導入管から水素ガスを900ml/分(大気圧換算)で供給し、トリメチルインジウムを気化させ、ガス濃度計でトリメチルインジウム濃度を測定した。
実験2
担体担持有機金属化合物を充填した容器Bについて、キャリアガス導入管から水素ガスを900ml/分(大気圧換算)で供給し、実験1と同様にトリメチルインジウム濃度を測定した。
実験3
担体担持有機金属化合物を充填した容器Bについて、キャリアガス導入管から水素ガスを600ml/分(大気圧換算)で供給し、実験例1と同様にトリメチルインジウム濃度を測定した。
各実験の測定結果より、使用率(一定濃度のトリメチルインジウムガスが得られる間に気化したトリメチルインジウムの総重量の容器へのトリメチルインジウム充填量に対する比率)の比(実験1を基準)を求めた。その結果を表1に示す。
2 キャリアガス導入管
3 キャリアガス導入管の先端部
3’邪魔板
4 キャリアガス導出管
5 キャリアガス導出管の先端部
6 担体担持有機金属化合物
7 容器の天板
Claims (3)
- 容器上部にキャリアガス導入管の先端部、容器底部にキャリアガス導出管の先端部を配設し、かつ該容器内に有機金属化合物に対して不活性な担体に常温で固体の有機金属化合物を被覆した担体担持有機金属化合物を充填してなる有機金属化合物供給容器において、キャリアガス導入管の先端部より供給されるキャリアガスが、容器を垂直に設置した場合、その中心軸に対し略垂直方向に噴出するように、キャリアガス導入管の先端部を構成し、容器底部とキャリアガス導出管の先端部との間隔を2〜15mmに構成してなる有機金属化合物供給容器。
- キャリアガス導入管の先端部からの噴出角度が、容器中心軸に対し90°±5°であることを特徴とする請求項1記載の有機金属化合物供給容器。
- 有機金属化合物がトリメチルインジウムであることを特徴とする請求項1〜2のいずれかに記載の有機金属化合物供給容器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225595A JP5050739B2 (ja) | 2007-08-31 | 2007-08-31 | 有機金属化合物供給容器 |
KR1020080083293A KR20090023166A (ko) | 2007-08-31 | 2008-08-26 | 유기 금속 화합물 공급 용기 |
TW097132869A TW200920490A (en) | 2007-08-31 | 2008-08-28 | A vessel for providing organometallic compound |
CNA2008102149354A CN101376967A (zh) | 2007-08-31 | 2008-08-29 | 有机金属化合物供给容器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225595A JP5050739B2 (ja) | 2007-08-31 | 2007-08-31 | 有機金属化合物供給容器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009059871A JP2009059871A (ja) | 2009-03-19 |
JP5050739B2 true JP5050739B2 (ja) | 2012-10-17 |
Family
ID=40420702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007225595A Expired - Fee Related JP5050739B2 (ja) | 2007-08-31 | 2007-08-31 | 有機金属化合物供給容器 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5050739B2 (ja) |
KR (1) | KR20090023166A (ja) |
CN (1) | CN101376967A (ja) |
TW (1) | TW200920490A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103518165B (zh) | 2011-05-10 | 2016-06-08 | 株式会社富士金 | 带有流量监测器的压力式流量控制装置 |
JP5755958B2 (ja) | 2011-07-08 | 2015-07-29 | 株式会社フジキン | 半導体製造装置の原料ガス供給装置 |
JP5652960B2 (ja) * | 2011-08-01 | 2015-01-14 | 株式会社フジキン | 原料気化供給装置 |
JP5647083B2 (ja) | 2011-09-06 | 2014-12-24 | 株式会社フジキン | 原料濃度検出機構を備えた原料気化供給装置 |
KR101389011B1 (ko) | 2012-03-28 | 2014-04-24 | 주식회사 유니텍스 | 소스 컨테이너 및 기상 증착용 반응로 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140075019A (ko) * | 2006-05-30 | 2014-06-18 | 우베 고산 가부시키가이샤 | 유기금속 화합물의 공급 장치 |
-
2007
- 2007-08-31 JP JP2007225595A patent/JP5050739B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-26 KR KR1020080083293A patent/KR20090023166A/ko not_active Application Discontinuation
- 2008-08-28 TW TW097132869A patent/TW200920490A/zh unknown
- 2008-08-29 CN CNA2008102149354A patent/CN101376967A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101376967A (zh) | 2009-03-04 |
KR20090023166A (ko) | 2009-03-04 |
TW200920490A (en) | 2009-05-16 |
JP2009059871A (ja) | 2009-03-19 |
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