JP2013019003A - 半導体製造装置の原料ガス供給装置 - Google Patents
半導体製造装置の原料ガス供給装置 Download PDFInfo
- Publication number
- JP2013019003A JP2013019003A JP2011151375A JP2011151375A JP2013019003A JP 2013019003 A JP2013019003 A JP 2013019003A JP 2011151375 A JP2011151375 A JP 2011151375A JP 2011151375 A JP2011151375 A JP 2011151375A JP 2013019003 A JP2013019003 A JP 2013019003A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- raw material
- supply
- source
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002994 raw material Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims abstract description 228
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000007788 liquid Substances 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 abstract description 16
- 230000001276 controlling effect Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000009897 systematic effect Effects 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86485—Line condition change responsive release of valve
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】液体原料ガスを貯留するソースタンク5の温度を設定値に保持すると共に、ソースタンクの内部上方空間部から導出した液体原料ガスの蒸気である原料ガスG1のプロセスチャンバ11への供給圧力を自動圧力調整装置6によって制御し、自動圧力調整装置の二次側ガス流通路内の原料ガス圧を所望の設定圧に保持しつつ原料ガスG1を絞り部を介してプロセスチャンバへ供給する構成とする。
【選択図】図1
Description
また、26は恒温加熱部、30はヒータ、31はウエハ、Gn’は他の原料ガス、Vnは他の原料ガスGn’の開閉弁である。
キャリアガスG1’の供給量とソースタンク25の温度とソースタンク25の内部圧力(混合ガスG0’の圧力)が設定値に夫々保持されることにより、圧力コントロール弁CVを通して定混合比で定流量の混合ガスG0’が、熱式質量流量制御装置23の設定流量に比例した所定の流量値に高精度で制御されつつ供給され、開閉弁V1が開放されることによりプロセスチャンバ29へ供給される。
また、混合ガス(TiCl4+キャリアガス)G0’の供給流量は約20sccmであり、アルゴン(Ar)及びアンモニア(NH3)の供給圧は0.15PaG、供給流量は夫々約10SLMである。更に、プロセスチャンバ29の内容積は500〜1000ccであり、内圧は1Torr以下に保持されている。
先ず、図4及び図5のガス供給装置に於いては、キャリアガスG1’を用いて液体原料ガス24の蒸気G2’を原料ガスとしてプロセスチャンバ29へ供給しているため、液体原料ガス24の蒸気G2’のみを直接にプロセスチャンバ29へ供給することができず、その結果、混合ガスG0’内の原料ガスG2’の濃度管理に手数が掛かり、高精度な原料ガスG2’の供給量制御が困難になるという問題がある。
その結果、キャリアガスを用いることなしに液体原料ガスG1のみを高精度で流量制御しつつ供給することができ、原料ガスG1の安定した供給が可能となると共に流量制御性が大幅に向上する。
図1は、本発明の実施形態に係る原料ガス供給装置の構成系統図であり、当該原料ガス供給装置は、液体原料タンク1、液体原料流量メータ2、液体原料供給弁3、液体原料4、ソースタンク5、原料ガス出口弁7、プロセスチャンバ11へ供給する原料ガス流通路9の内部圧力を制御する自動圧力調整装置6、プロセスチャンバ11へ供給するガスGの供給流量を調整する絞り部(ここでは、オリフィスを使用)8、ガス流通路9、供給ガス切換弁10、ガス流通路9やソースタンク5等を加温する恒温加熱装置15等から構成されている。
尚、本実施例では液体原料ガスの1つとして四塩化チタン(TiCl4)が用いられており、以下液体原料ガス4をTiCl4として説明をする。
生成された液体原料4の飽和蒸気G1は原料ガス出口弁7を通して自動圧力調整器6G1へ流入し、自動圧力調整器6G1によって所定の設定圧に調整され、オリフィス8G1、原料ガス供給切換弁10G1を通してプロセスチャンバ11へ供給されて行く。
即ち、圧力検出器P1及び温度検出器T1からの検出値はディジタル信号に変換されて温度補正回路12aへ入力され、ここで検出圧力P1が検出圧力Ptに補正されたあと、比較回路12bへ入力される。また、設定圧力の入力信号Psが端子13から入力され、入出力回路12bでディジタル値に変換されたあと、比較回路12bへ入力され、ここで前記温度補正回路12aからの温度補正をした検出圧力Ptより大きい場合には、コントロールバルブV0の駆動部へ制御信号Pdが出力される。これにより、コントロールバルブV0が閉鎖方向へ駆動され、設定圧力入力信号Psと温度補正した検出圧力Ptとの差Pd=Ps−Ptが零となるまで閉弁方向へ駆動される。
G2 アンモニアガス
G3 アルゴンガス
Gn その他のガス
1 流体原料ガスタンク(四塩化チタン)
1G2 アンモニアガスタンク
1G3 アルゴンガスタンク
1Gn その他のガス種のタンク
2 液体原料流量メータ
3 液体原料供給弁
4 液体原料ガス(四塩化チタン、TiCl4)
5 ソースタンク
5a ソースタンクの内部空間
6 自動圧力調整装置
6G1 四塩化チタンガスの自動圧力調整器
6G2 アンモニアガスの自動圧力調整器
6G3 アルゴンガスの自動圧力調整器
7 原料ガス出口弁
7G2 アンモニアガス出口弁
7G3 アルゴンガス出口弁
7Gn その他のガス出口弁
8 絞り部(オリフィス)
8G1 四塩化ガスのオリフィス
8G2 アンモニアガスのオリフィス
8G3 アルゴンガスのオリフィス
8Gn その他のガスのオリフィス
9 ガス流通路
9G1 四塩化チタンガス流通路
9G2 アンモニアガス流通路
9G3 アルゴンガス流通路
9Gn その他のガスの流通路
10 供給ガス切換弁
11 プロセスチャンバ
12 演算制御部
12a 温度補正回路
12b 比較回路
12c 入・出力回路
12d 出力回路
V0 コントロールバルブ
13 設定入力端子
14 出力信号端子
15 恒温加熱装置
P1 G1の圧力(検出圧力)
T1 G1の温度(検出温度)
Pt 補正検出圧力
Tt 補正検出温度
Ps 設定圧力入力信号
Pd 制御信号
Pot 出力信号
21 キャリアガス源
22 圧力調整器
23 マスフローコントローラ
24 液体原料ガス(TiCl4)
25 ソースタンク
26 恒温加熱部
27 ソースタンク内圧自動圧力調整装置
28 端子
29 プロセスチャンバ
30 ヒータ
31 ウエハ
32 真空ポンプ
33 バッファチャンバ
34 バルブ開閉機構
35 気化器
G1’ キャリアガス
G2’ 液体原料の蒸気
G0’ 混合ガス
Gn’ 他の原料ガス
Cv 圧力コントロール弁
V1・V2・V3 開閉弁
Vn 管路
Go0 混合体
Claims (6)
- 液体原料ガス供給源と,前記液体原料ガスを貯留するソースタンクと,前記ソースタンクの内部上方空間部から液体原料ガス蒸気である原料ガスをプロセスチャンバへ供給するガス流通路と,当該ガス流通路の上流側に介設され、プロセスチャンバへ供給する原料ガスの供給圧を設定値に保持する自動圧力調整器と,前記ガス流通路の下流側に介設され、プロセスチャンバへ供給する原料ガスの通路を開閉する供給ガス切換弁と,当該供給ガス切換弁の入口側と出口側の少なくとも一方に設けられ、プロセスチャンバへ供給する原料ガスの流量を調整する絞り部と,前記ソースタンクと前記ガス流通路と供給ガス切換弁及び絞り部とを設定温度に加熱する恒温加熱装置とから成り、自動圧力調整器の下流側の原料ガスの供給圧を所望の圧力に制御しつつ設定流量の原料ガスをプロセスチャンバへ供給する構成としたことを特徴とする半導体製造装置の原料ガス供給装置。
- 液体原料ガスを四塩化チタン(TiCl4)とするようにした請求項1に記載の半導体製造装置の原料ガス供給装置。
- 絞り部を供給ガス切換弁の入口側に設けるようにした請求項1に記載の半導体製造装置の原料ガス供給装置。
- 恒温加熱装置によりソースタンクを100℃〜250℃の温度に加熱するようにした請求項1に記載の半導体製造装置の原料ガス供給装置。
- 恒温加熱装置によりガス流通路と自動圧力調整器と絞り部及び切換弁とを100℃〜250℃の温度に加熱するようにした請求項1に記載の半導体製造装置の原料ガス供給装置。
- 原料ガスのガス流通路と並列に、アルゴンガスを供給するガス流通路とアンモニアガスを供給するガス流通路を夫々設けるようにした請求項1に記載の半導体製造装置の原料ガス供給装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011151375A JP5755958B2 (ja) | 2011-07-08 | 2011-07-08 | 半導体製造装置の原料ガス供給装置 |
KR1020137028656A KR101567357B1 (ko) | 2011-07-08 | 2012-04-25 | 반도체 제조 장치의 원료 가스 공급 장치 |
PCT/JP2012/002832 WO2013008372A1 (ja) | 2011-07-08 | 2012-04-25 | 半導体製造装置の原料ガス供給装置 |
CN201280033804.0A CN103649367B (zh) | 2011-07-08 | 2012-04-25 | 半导体制造装置的原料气体供给装置 |
TW101117394A TWI525734B (zh) | 2011-07-08 | 2012-05-16 | And a raw material gas supply device for a semiconductor manufacturing apparatus |
US14/150,263 US9556518B2 (en) | 2011-07-08 | 2014-01-08 | Raw material gas supply apparatus for semiconductor manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011151375A JP5755958B2 (ja) | 2011-07-08 | 2011-07-08 | 半導体製造装置の原料ガス供給装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013019003A true JP2013019003A (ja) | 2013-01-31 |
JP5755958B2 JP5755958B2 (ja) | 2015-07-29 |
Family
ID=47505684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011151375A Active JP5755958B2 (ja) | 2011-07-08 | 2011-07-08 | 半導体製造装置の原料ガス供給装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9556518B2 (ja) |
JP (1) | JP5755958B2 (ja) |
KR (1) | KR101567357B1 (ja) |
CN (1) | CN103649367B (ja) |
TW (1) | TWI525734B (ja) |
WO (1) | WO2013008372A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160120660A (ko) * | 2015-04-08 | 2016-10-18 | 도쿄엘렉트론가부시키가이샤 | 가스 공급 제어 방법 |
JP2016201530A (ja) * | 2015-04-08 | 2016-12-01 | 東京エレクトロン株式会社 | ガス供給制御方法 |
US9938620B2 (en) | 2014-03-28 | 2018-04-10 | Tokyo Electron Limited | Gas supply mechanism, gas supplying method, film forming apparatus and film forming method using the same |
JP7107648B2 (ja) | 2017-07-11 | 2022-07-27 | 株式会社堀場エステック | 流体制御装置、流体制御システム、流体制御方法、及び、流体制御装置用プログラム |
Families Citing this family (204)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9243325B2 (en) * | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
JP5837869B2 (ja) * | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
WO2015114911A1 (ja) | 2014-02-03 | 2015-08-06 | 信越化学工業株式会社 | 発泡樹脂成形用金型及びその製造方法 |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
JP2016134569A (ja) * | 2015-01-21 | 2016-07-25 | 株式会社東芝 | 半導体製造装置 |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
JP6573559B2 (ja) * | 2016-03-03 | 2019-09-11 | 東京エレクトロン株式会社 | 気化原料供給装置及びこれを用いた基板処理装置 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
CN110382103B (zh) * | 2017-05-11 | 2022-07-22 | 株式会社堀场Stec | 液体材料汽化供给装置和计算机可读存储介质 |
JP6811147B2 (ja) * | 2017-06-23 | 2021-01-13 | 東京エレクトロン株式会社 | ガス供給系を検査する方法 |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10957530B2 (en) | 2017-12-19 | 2021-03-23 | Micron Technology, Inc. | Freezing a sacrificial material in forming a semiconductor |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
TWI819010B (zh) | 2018-06-27 | 2023-10-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP7232651B2 (ja) * | 2019-01-25 | 2023-03-03 | 東京エレクトロン株式会社 | 熱媒体の制御方法および熱媒体制御装置 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
JP6966499B2 (ja) * | 2019-03-06 | 2021-11-17 | Ckd株式会社 | ガス供給ユニット及びガス供給方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (ja) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | トポロジー制御されたアモルファスカーボンポリマー膜の形成方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
TW202129068A (zh) | 2020-01-20 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 形成薄膜之方法及修飾薄膜表面之方法 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
SG10202101459XA (en) * | 2020-02-25 | 2021-09-29 | Kc Co Ltd | Gas mixing supply device, mixing system, and gas mixing supply method |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
JP2022077278A (ja) * | 2020-11-11 | 2022-05-23 | 株式会社堀場エステック | 濃度制御システム、濃度制御方法、及び、濃度制御システム用プログラム |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002543589A (ja) * | 1999-04-27 | 2002-12-17 | 東京エレクトロン株式会社 | ハロゲン化チタン前駆体からのCVDTiNプラグの形成 |
JP2003323217A (ja) * | 2002-05-01 | 2003-11-14 | Stec Inc | 流量制御システム |
JP2008010510A (ja) * | 2006-06-27 | 2008-01-17 | Fujikin Inc | 原料の気化供給装置及びこれに用いる圧力自動調整装置。 |
JP2011006782A (ja) * | 2009-05-28 | 2011-01-13 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60244333A (ja) * | 1984-05-21 | 1985-12-04 | Sumitomo Electric Ind Ltd | 原料液補給装置 |
US4787254A (en) | 1987-02-20 | 1988-11-29 | Briggs Technology, Inc. | Mass flow meter |
JP2538042B2 (ja) | 1989-03-29 | 1996-09-25 | 株式会社エステック | 有機金属化合物の気化供給方法とその装置 |
JP2893148B2 (ja) | 1991-10-08 | 1999-05-17 | 東京エレクトロン株式会社 | 処理装置 |
JPH06104155A (ja) | 1992-09-22 | 1994-04-15 | M C Electron Kk | 半導体製造プロセスにおける中間制御装置 |
JPH07118862A (ja) | 1993-10-19 | 1995-05-09 | Hitachi Electron Eng Co Ltd | Cvd装置の反応ガス濃度制御方法 |
US5451258A (en) | 1994-05-11 | 1995-09-19 | Materials Research Corporation | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber |
JP3291161B2 (ja) | 1995-06-12 | 2002-06-10 | 株式会社フジキン | 圧力式流量制御装置 |
JP3580645B2 (ja) | 1996-08-12 | 2004-10-27 | 忠弘 大見 | 圧力式流量制御装置 |
US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
US6205409B1 (en) | 1998-06-26 | 2001-03-20 | Advanced Micro Devices, Inc. | Predictive failure monitoring system for a mass flow controller |
JP3522544B2 (ja) | 1998-08-24 | 2004-04-26 | 忠弘 大見 | 流体可変型流量制御装置 |
JP4439030B2 (ja) | 1999-04-01 | 2010-03-24 | 東京エレクトロン株式会社 | 気化器、処理装置、処理方法、及び半導体チップの製造方法 |
US6210482B1 (en) | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
US6265311B1 (en) * | 1999-04-27 | 2001-07-24 | Tokyo Electron Limited | PECVD of TaN films from tantalum halide precursors |
US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
GB9929279D0 (en) | 1999-12-11 | 2000-02-02 | Epichem Ltd | An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites |
JP2001258184A (ja) | 2000-03-09 | 2001-09-21 | Fuji Xerox Co Ltd | 自己電力供給型カード型情報記録媒体、カード型情報記録媒体入出力装置、電力供給方法、及び通信方法 |
JP2001313288A (ja) | 2000-04-28 | 2001-11-09 | Ebara Corp | 原料ガス供給装置 |
US6539968B1 (en) | 2000-09-20 | 2003-04-01 | Fugasity Corporation | Fluid flow controller and method of operation |
US6564824B2 (en) | 2001-04-13 | 2003-05-20 | Flowmatrix, Inc. | Mass flow meter systems and methods |
JP2003013233A (ja) | 2001-07-04 | 2003-01-15 | Horiba Ltd | 液体原料気化供給装置 |
US6701066B2 (en) | 2001-10-11 | 2004-03-02 | Micron Technology, Inc. | Delivery of solid chemical precursors |
JP4082901B2 (ja) | 2001-12-28 | 2008-04-30 | 忠弘 大見 | 圧力センサ、圧力制御装置及び圧力式流量制御装置の温度ドリフト補正装置 |
JP4667704B2 (ja) | 2002-03-27 | 2011-04-13 | 株式会社堀場製作所 | 薄膜堆積方法とその装置および薄膜堆積方法に用いる混合ガス供給装置 |
JP3973605B2 (ja) | 2002-07-10 | 2007-09-12 | 東京エレクトロン株式会社 | 成膜装置及びこれに使用する原料供給装置、成膜方法 |
WO2004010474A2 (en) | 2002-07-19 | 2004-01-29 | Mykrolis Corporation | Liquid flow controller and precision dispense apparatus and system |
JP4137666B2 (ja) | 2003-02-17 | 2008-08-20 | 株式会社堀場エステック | マスフローコントローラ |
JP2004256864A (ja) | 2003-02-26 | 2004-09-16 | Benesol Inc | Mocvd装置における原料供給フィードバック制御システム |
JP4298476B2 (ja) | 2003-11-14 | 2009-07-22 | 株式会社フジキン | 流体制御装置 |
US20050221004A1 (en) * | 2004-01-20 | 2005-10-06 | Kilpela Olli V | Vapor reactant source system with choked-flow elements |
JP4086057B2 (ja) | 2004-06-21 | 2008-05-14 | 日立金属株式会社 | 質量流量制御装置及びこの検定方法 |
JP4395186B2 (ja) | 2004-07-07 | 2010-01-06 | パーカー・ハニフィン・コーポレーション | 流量制御装置および体積の内部等温制御により流量検証を行うための方法 |
JP4856905B2 (ja) | 2005-06-27 | 2012-01-18 | 国立大学法人東北大学 | 流量レンジ可変型流量制御装置 |
JP4866682B2 (ja) | 2005-09-01 | 2012-02-01 | 株式会社フジキン | 圧力センサを保有する流量制御装置を用いた流体供給系の異常検出方法 |
JP2007250803A (ja) | 2006-03-15 | 2007-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20070254093A1 (en) | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor with concentration-monitor feedback |
US7640078B2 (en) | 2006-07-05 | 2009-12-29 | Advanced Energy Industries, Inc. | Multi-mode control algorithm |
US7833353B2 (en) * | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
DE102007011589A1 (de) | 2007-03-08 | 2008-09-11 | Schott Ag | Fördereinrichtung für Precursor |
JP5050739B2 (ja) | 2007-08-31 | 2012-10-17 | 住友化学株式会社 | 有機金属化合物供給容器 |
JP5372353B2 (ja) | 2007-09-25 | 2013-12-18 | 株式会社フジキン | 半導体製造装置用ガス供給装置 |
US7874208B2 (en) | 2007-10-10 | 2011-01-25 | Brooks Instrument, Llc | System for and method of providing a wide-range flow controller |
US20090214777A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
JP5461786B2 (ja) * | 2008-04-01 | 2014-04-02 | 株式会社フジキン | 気化器を備えたガス供給装置 |
KR101578220B1 (ko) | 2008-10-31 | 2015-12-16 | 가부시키가이샤 호리바 세이샤쿠쇼 | 재료가스 농도 제어 시스템 |
JP2010153741A (ja) | 2008-12-26 | 2010-07-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
US8151814B2 (en) * | 2009-01-13 | 2012-04-10 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
JP4941514B2 (ja) | 2009-06-30 | 2012-05-30 | 東京エレクトロン株式会社 | 処理ガス供給装置及び成膜装置 |
TWI435196B (zh) | 2009-10-15 | 2014-04-21 | Pivotal Systems Corp | 氣體流量控制方法及裝置 |
JP5562712B2 (ja) | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | 半導体製造装置用のガス供給装置 |
-
2011
- 2011-07-08 JP JP2011151375A patent/JP5755958B2/ja active Active
-
2012
- 2012-04-25 CN CN201280033804.0A patent/CN103649367B/zh not_active Expired - Fee Related
- 2012-04-25 KR KR1020137028656A patent/KR101567357B1/ko active IP Right Grant
- 2012-04-25 WO PCT/JP2012/002832 patent/WO2013008372A1/ja active Application Filing
- 2012-05-16 TW TW101117394A patent/TWI525734B/zh active
-
2014
- 2014-01-08 US US14/150,263 patent/US9556518B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002543589A (ja) * | 1999-04-27 | 2002-12-17 | 東京エレクトロン株式会社 | ハロゲン化チタン前駆体からのCVDTiNプラグの形成 |
JP2003323217A (ja) * | 2002-05-01 | 2003-11-14 | Stec Inc | 流量制御システム |
JP2008010510A (ja) * | 2006-06-27 | 2008-01-17 | Fujikin Inc | 原料の気化供給装置及びこれに用いる圧力自動調整装置。 |
JP2011006782A (ja) * | 2009-05-28 | 2011-01-13 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9938620B2 (en) | 2014-03-28 | 2018-04-10 | Tokyo Electron Limited | Gas supply mechanism, gas supplying method, film forming apparatus and film forming method using the same |
KR20160120660A (ko) * | 2015-04-08 | 2016-10-18 | 도쿄엘렉트론가부시키가이샤 | 가스 공급 제어 방법 |
JP2016201530A (ja) * | 2015-04-08 | 2016-12-01 | 東京エレクトロン株式会社 | ガス供給制御方法 |
TWI689802B (zh) * | 2015-04-08 | 2020-04-01 | 日商東京威力科創股份有限公司 | 氣體供給控制方法 |
KR102387482B1 (ko) | 2015-04-08 | 2022-04-18 | 도쿄엘렉트론가부시키가이샤 | 가스 공급 제어 방법 |
JP7107648B2 (ja) | 2017-07-11 | 2022-07-27 | 株式会社堀場エステック | 流体制御装置、流体制御システム、流体制御方法、及び、流体制御装置用プログラム |
Also Published As
Publication number | Publication date |
---|---|
US20140190581A1 (en) | 2014-07-10 |
WO2013008372A1 (ja) | 2013-01-17 |
KR101567357B1 (ko) | 2015-11-09 |
JP5755958B2 (ja) | 2015-07-29 |
CN103649367B (zh) | 2015-12-02 |
US9556518B2 (en) | 2017-01-31 |
KR20140005314A (ko) | 2014-01-14 |
TW201308483A (zh) | 2013-02-16 |
CN103649367A (zh) | 2014-03-19 |
TWI525734B (zh) | 2016-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5755958B2 (ja) | 半導体製造装置の原料ガス供給装置 | |
US8151814B2 (en) | Method for controlling flow and concentration of liquid precursor | |
JP5703114B2 (ja) | 原料の気化供給装置 | |
US9663857B2 (en) | Method for stabilizing reaction chamber pressure | |
US8776821B2 (en) | Vapor delivery device, methods of manufacture and methods of use thereof | |
US9416452B2 (en) | Vapor delivery device, methods of manufacture and methods of use thereof | |
JP2012234860A5 (ja) | ||
US8927066B2 (en) | Method and apparatus for gas delivery | |
TWI503443B (zh) | Raw material gasification supply device | |
KR102339755B1 (ko) | Cvd-반응기에서의 배기 가스 정화를 위한 장치 및 방법 | |
TW200815703A (en) | Vaporizer/supplier of material and automatic pressure regulator for use therein | |
TW201410913A (zh) | 蒸汽遞送裝置、製造方法及其使用方法 | |
CN111394789A (zh) | 化学气相沉积设备的进气结构、进气方法及设备 | |
US20230212787A1 (en) | Metalorganic chemical vapor phase epitaxy or vapor phase deposition apparatus | |
JP2008248395A (ja) | プラズマ処理装置およびプラズマ処理装置の調圧方法 | |
JP4457119B2 (ja) | 有機金属気化供給装置、有機金属気相成長装置、および有機金属気相成長方法 | |
JP2020105577A (ja) | 流体供給装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140313 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20140623 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20140729 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140805 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140916 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150225 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150225 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150312 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150513 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150528 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5755958 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |