JP5562712B2 - 半導体製造装置用のガス供給装置 - Google Patents
半導体製造装置用のガス供給装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000012545 processing Methods 0.000 claims description 67
- 238000011144 upstream manufacturing Methods 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 10
- 238000004891 communication Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 259
- 238000000034 method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 238000009434 installation Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000010349 pulsation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7759—Responsive to change in rate of fluid flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7761—Electrically actuated valve
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85938—Non-valved flow dividers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87249—Multiple inlet with multiple outlet
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- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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Description
以下、図面を参照して本発明による半導体製造装置用のガス供給装置の第1の実施の形態について説明する。
次に図7により本発明による半導体製造装置用のガス供給装置の第2の実施の形態について説明する。図7に示す第2の実施の形態は流量検出用のサーマルセンサを取外したものであり、他の構成は図1乃至図6に示す第1の実施の形態と略同一である。
次に図8により本発明の第3の実施の形態について説明する。
次に図9(a)(b)(c)により本発明の第4の実施の形態について説明する。
次に図10により本発明の第5の実施の形態について説明する。
11a,11b ガス供給源
12a,12b ガス供給弁
13a,13b ガス導入管
15 ガス集合管
16 流量調整器
17 圧力検出器
18 温度検出器
20 流量検出用のサーマルセンサ
21a,21b 分岐管
22a,22b オリフィス
23a,23b コントロール弁
24a,24b 開閉弁
27a,27b 処理反応炉
30 圧力式流量制御器
30A 制御回路
40 流量演算回路
52 流量設定回路
58 演算制御回路
Claims (6)
- 複数の処理反応炉にガスを供給する半導体製造装置用のガス供給装置において、
複数のガス供給源と、
各ガス供給源に接続されたガス導入管と、
複数のガス導入管が集合したガス集合管と、
ガス集合管から分岐された複数の分岐管であって、各々が対応する処理反応炉に接続された複数の分岐管と、
ガス集合管および複数の分岐管に設けられた圧力式流量制御器とを備え、
圧力式流量制御器はガス集合管に設けられた圧力検出器と、各分岐管に設けられたコントロール弁と、各分岐管のうちコントロール弁の下流側または上流側に設けられたオリフィスと、圧力検出器からの検出圧力P1 から流量Qc=KP1 (Kは定数)を求める流量演算回路と、流量設定信号Qsを出力する流量設定回路と、流量演算回路からの流量Qcと流量設定回路からの流量設定信号Qsとに基づいて各コントロール弁を制御する演算制御回路とを有することを特徴とする半導体製造装置用のガス供給装置。 - 圧力式流量制御器はガス集合管に設けられた流量検出用のサーマルセンサを更に有し、サーマルセンサからの信号Qaが演算制御回路に送られて、この演算制御回路においてガス集合管内の圧力が音速領域であるか否か判定されることを特徴とする請求項1記載の半導体製造装置用のガス供給装置。
- 複数のガス供給源のうちあるガス供給源のガス導入管にバイパス管が接続され、このバイパス管と各々の分岐管との間が連通管により連通されていることを特徴とする請求項1記載の半導体製造装置用のガス供給装置。
- 各分岐管は枚葉クラスタ式の処理反応炉に接続されていることを特徴とする請求項1記載の半導体製造装置用のガス供給装置。
- 各分岐管はバッチ式の処理反応炉に接続されていることを特徴とする請求項1記載の半導体製造装置用のガス供給装置。
- 圧力式流量制御器は、演算制御回路と各コントロール弁との間に設けられた電気/空圧調整部を有することを特徴とする請求項1記載の半導体製造装置用のガス供給装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010105611A JP5562712B2 (ja) | 2010-04-30 | 2010-04-30 | 半導体製造装置用のガス供給装置 |
TW100113913A TWI517280B (zh) | 2010-04-30 | 2011-04-21 | 半導體製造設備用之氣體供應設備 |
US13/094,202 US8944095B2 (en) | 2010-04-30 | 2011-04-26 | Gas supply apparatus for semiconductor manufacturing apparatus |
CN201110109144.7A CN102235573B (zh) | 2010-04-30 | 2011-04-28 | 半导体制造装置用的气体供给装置 |
KR1020110039862A KR101565437B1 (ko) | 2010-04-30 | 2011-04-28 | 반도체 제조 장치용의 가스 공급 장치 |
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JP2010105611A JP5562712B2 (ja) | 2010-04-30 | 2010-04-30 | 半導体製造装置用のガス供給装置 |
Publications (3)
Publication Number | Publication Date |
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JP2011233841A JP2011233841A (ja) | 2011-11-17 |
JP2011233841A5 JP2011233841A5 (ja) | 2013-01-17 |
JP5562712B2 true JP5562712B2 (ja) | 2014-07-30 |
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US (1) | US8944095B2 (ja) |
JP (1) | JP5562712B2 (ja) |
KR (1) | KR101565437B1 (ja) |
CN (1) | CN102235573B (ja) |
TW (1) | TWI517280B (ja) |
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US20110265895A1 (en) | 2011-11-03 |
CN102235573B (zh) | 2015-03-18 |
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TWI517280B (zh) | 2016-01-11 |
US8944095B2 (en) | 2015-02-03 |
CN102235573A (zh) | 2011-11-09 |
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KR20110121560A (ko) | 2011-11-07 |
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