JP6370198B2 - 気相成長装置および気相成長方法 - Google Patents
気相成長装置および気相成長方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 147
- 238000006243 chemical reaction Methods 0.000 claims description 142
- 230000005856 abnormality Effects 0.000 claims description 48
- 238000001947 vapour-phase growth Methods 0.000 claims description 45
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 227
- 235000012431 wafers Nutrition 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101150076349 PRRG1 gene Proteins 0.000 description 1
- 102100028865 Transmembrane gamma-carboxyglutamic acid protein 1 Human genes 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Description
11 第1の主ガス供給路
12 第1の主マスフローコントローラ
13a〜d 第1〜第4の副ガス供給路
14a〜d 第1のストップバルブ
15a〜d 第2のストップバルブ
16a〜d 副マスフローコントローラ
17 分岐部
18 筐体
21 第2の主ガス供給路
22 第2の主マスフローコントローラ
23a〜d 第1〜第4の副ガス供給路
24a〜d 第1のストップバルブ
25a〜d 第2のストップバルブ
26a〜d 副マスフローコントローラ
27 分岐部
31 第3の主ガス供給路
32 第3の主マスフローコントローラ
33a〜d 第1〜第4の副ガス供給路
34a〜d 第1のストップバルブ
35a〜d 第2のストップバルブ
36a〜d 副マスフローコントローラ
37 分岐部
40a〜d 圧力調整部
42a〜d 副ガス排出路
44 主ガス排出路
46 真空ポンプ
50 制御部
Claims (5)
- n(nは2以上の整数)個の反応室と、
前記n個の反応室にプロセスガスを供給する主ガス供給路と、
前記主ガス供給路に設けられ、前記主ガス供給路に流す前記プロセスガスの流量を制御する主マスフローコントローラと、
前記主ガス供給路を分岐する分岐部と、
前記分岐部で前記主ガス供給路から分岐され、前記n個の反応室に分流された前記プロセスガスを供給するn本の副ガス供給路と、
前記n本の副ガス供給路の前記分岐部と前記n個の反応室との間に設けられ、前記分岐部までの距離が、前記反応室までの距離よりも小さくなるよう配置され、前記プロセスガスの流れを遮断可能なn個の第1のストップバルブと、
前記n本の副ガス供給路の前記n個の第1のストップバルブと前記n個の反応室との間に設けられ、前記n本の副ガス供給路に流す前記プロセスガスの流量を制御するn個の副マスフローコントローラと、
を備えることを特徴とする気相成長装置。 - 前記n個の反応室のいずれか一個の反応室における異常の検出に基づき前記プロセスガスの遮断の要否を判断し、遮断が要と判断された場合、前記異常が検出された反応室への前記プロセスガスの流れを遮断可能な前記第1のストップバルブを閉じるとともに、前記異常が検出された反応室以外の前記反応室に供給する前記プロセスガスの総流量を算出し、算出された総流量に基づき前記主マスフローコントローラを制御する制御部を、さらに備えることを特徴とする請求項1記載の気相成長装置。
- 前記n本の副ガス供給路の前記n個の第1のストップバルブと前記n個の反応室との間に設けられ、前記プロセスガスの流れを遮断可能なn個の第2のストップバルブを、さらに備えることを特徴とする請求項1または請求項2記載の気相成長装置。
- n(nは2以上の整数)個の反応室のそれぞれに基板を搬入し、
主ガス供給路に所定の流量に制御されたプロセスガスを導入し、
前記主ガス供給路から分岐されるn本の副ガス供給路にそれぞれ流量が制御されて分流された前記プロセスガスを導入し、
前記n本の副ガス供給路から、前記n個の反応室のそれぞれに前記プロセスガスを供給して前記基板上に成膜し、
前記n個の反応室のうちのいずれかの反応室に異常が発生した場合、前記異常が発生した反応室に接続される前記副ガス供給路への前記プロセスガスの導入を瞬時に遮断するとともに、前記異常が検出された反応室以外の反応室に供給する前記プロセスガスの総流量を算出し、前記主ガス供給路に導入される前記プロセスガスの流量を制御することを特徴とする気相成長方法。 - 前記異常が成膜中に検出された場合、成膜条件が変わるまで前記プロセスガスの供給を維持した後、前記異常が発生した反応室に接続される前記副ガス供給路への前記プロセスガスの導入を瞬時に遮断することを特徴とする請求項4記載の気相成長方法。
Priority Applications (5)
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JP2014227546A JP6370198B2 (ja) | 2014-11-07 | 2014-11-07 | 気相成長装置および気相成長方法 |
PCT/JP2015/081003 WO2016072410A1 (ja) | 2014-11-07 | 2015-11-04 | 気相成長装置および気相成長方法 |
KR1020177004624A KR20170034406A (ko) | 2014-11-07 | 2015-11-04 | 기상 성장 장치 및 기상 성장 방법 |
CN201580045081.XA CN106796869A (zh) | 2014-11-07 | 2015-11-04 | 气相生长装置及气相生长方法 |
US15/585,944 US20170233867A1 (en) | 2014-11-07 | 2017-05-03 | Vapor phase growth apparatus and vapor phase growth method |
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JP2014227546A JP6370198B2 (ja) | 2014-11-07 | 2014-11-07 | 気相成長装置および気相成長方法 |
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JP6370198B2 true JP6370198B2 (ja) | 2018-08-08 |
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JP (1) | JP6370198B2 (ja) |
KR (1) | KR20170034406A (ja) |
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JPS62172719A (ja) * | 1986-01-25 | 1987-07-29 | Toshiba Mach Co Ltd | 気相成長などの処理装置 |
JPH01184818A (ja) * | 1988-01-13 | 1989-07-24 | Fujitsu Ltd | Mocvd装置 |
JPH01296613A (ja) * | 1988-05-25 | 1989-11-30 | Nec Corp | 3−v族化合物半導体の気相成長方法 |
JPH09246258A (ja) * | 1996-03-07 | 1997-09-19 | Kokusai Electric Co Ltd | 成膜装置 |
JPH10158843A (ja) * | 1996-12-06 | 1998-06-16 | Furukawa Electric Co Ltd:The | 気相成長装置 |
JPH11184818A (ja) * | 1997-12-25 | 1999-07-09 | Ntt Data Corp | 認証システム及び方法、並びに同システムのためのクライアントマシン |
JP2002212735A (ja) * | 2001-01-10 | 2002-07-31 | Sharp Corp | 有機金属気相成長装置及び材料ガス供給方法 |
JP2003049278A (ja) * | 2001-08-06 | 2003-02-21 | Canon Inc | 真空処理方法及び真空処理装置 |
JP3999059B2 (ja) * | 2002-06-26 | 2007-10-31 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
KR101275890B1 (ko) * | 2006-09-18 | 2013-06-14 | 엘지디스플레이 주식회사 | 가스분배 공급장치 |
JP5103983B2 (ja) * | 2007-03-28 | 2012-12-19 | 東京エレクトロン株式会社 | ガス供給方法、ガス供給装置、半導体製造装置及び記憶媒体 |
JP5562712B2 (ja) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | 半導体製造装置用のガス供給装置 |
JP5657446B2 (ja) * | 2011-03-23 | 2015-01-21 | 株式会社東芝 | シリンダーキャビネット |
CN102534713A (zh) * | 2012-02-28 | 2012-07-04 | 上海华力微电子有限公司 | 一种电镀机台退火腔体气体管路 |
KR20130125478A (ko) * | 2012-05-09 | 2013-11-19 | 박형상 | 증착막 형성장치 및 형성방법 |
-
2014
- 2014-11-07 JP JP2014227546A patent/JP6370198B2/ja active Active
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2015
- 2015-11-04 WO PCT/JP2015/081003 patent/WO2016072410A1/ja active Application Filing
- 2015-11-04 KR KR1020177004624A patent/KR20170034406A/ko not_active Application Discontinuation
- 2015-11-04 CN CN201580045081.XA patent/CN106796869A/zh active Pending
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2017
- 2017-05-03 US US15/585,944 patent/US20170233867A1/en not_active Abandoned
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JP2016092311A (ja) | 2016-05-23 |
CN106796869A (zh) | 2017-05-31 |
US20170233867A1 (en) | 2017-08-17 |
WO2016072410A1 (ja) | 2016-05-12 |
KR20170034406A (ko) | 2017-03-28 |
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