CN103217834A - 液晶显示器及其薄膜晶体管阵列面板 - Google Patents

液晶显示器及其薄膜晶体管阵列面板 Download PDF

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CN103217834A
CN103217834A CN2013101040285A CN201310104028A CN103217834A CN 103217834 A CN103217834 A CN 103217834A CN 2013101040285 A CN2013101040285 A CN 2013101040285A CN 201310104028 A CN201310104028 A CN 201310104028A CN 103217834 A CN103217834 A CN 103217834A
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pixel electrode
liquid crystal
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crystal display
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CN103217834B (zh
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宋长根
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Samsung Display Co Ltd
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Abstract

本发明公开一种液晶显示器及其薄膜晶体管阵列面板,其包括:第一基板,包括多个像素电极、多个栅极线和多个传导线,每个像素电极包括第一像素电极和第二像素电极,每个传导线设置在两个相邻栅极线之间;面对第一基板的第二基板;置于第一基板和第二基板之间的液晶层;和设置在第一基板和第二基板中至少一个上并且将第一像素电极和第二像素电极划分为不同的方向畴的多个畴分割部件;其中包括第一畴部件和第二畴部件的多个畴分割部件倾斜于栅极线,传导线的第一部分被第一像素的一部分像素电极交叠,传导线的第二部分被第二像素的一部分像素电极交叠,其中第二像素电极的电压不同于第一像素电极的电压,和其中液晶层的分子被排列成使得在没有电场的情况下它们的主轴基本上垂直于第一基板和第二基板的表面。

Description

液晶显示器及其薄膜晶体管阵列面板
本申请是申请日为2003年6月28日、申请号为200810130505.4及名称为“液晶显示器及其薄膜晶体管阵列面板”的发明专利申请的分案。
技术领域
本发明涉及液晶显示器,特别涉及用于液晶显示器的面板。
背景技术
通常,液晶显示器(LCD)包括液晶(LC)面板组件,该面板组件包括设有两种场发生电极如像素电极和公共电极的两个面板、以及间插在其间具有介电各向异性的LC层。场发生电极之间的电压差的变化,即由电极产生的电场的强度的变化改变了透过LCD的光的透射率,因此通过控制电极之间的电压差获得所希望的图像。
然而,LCD具有视角窄的关键性缺陷。为了克服这种问题,已经研制了用于增宽视角的各种技术,其中,在像素电极和公共电极上形成切口或突起的同时将LC分子垂直于上和下面板排列的技术是最有希望的增宽视角的技术。
设置在各个像素电极和公共电极上的切口产生弥散场(fringe field),该弥散场控制了LC分子的倾斜方向,由此增宽视角。
设置在各个像素电极和公共电极上的突起使电场变形,并且由于变形的电场而控制了LC分子的倾斜方向,由此增宽视角。
或者,在下面板的像素电极上设置切口,而在上面板的公共电极上设置突起。由切口和突起产生的弥散场控制LC分子的倾斜方向,由此形成多个畴(multiple domain)。
多畴LCD具有在所有方向的高达80°或更大的非常优异的基于对比度的视角或基于灰度反转的视角。基于对比度的视角(contrast-based viewing angle)定义为显示1:10的对比率的视角,而基于灰度反转的视角(grayinversion-based viewing angle)由灰度间亮度反转的限制角表示。然而,多畴LCD显示出侧向伽马(gamma)曲线变形,即正面伽马曲线和侧向伽马曲线互相不一致使得与甚至扭转向列(TN)模式LCD相比都呈现为变坏的左和右可视度。例如,具有用于隔开各个畴的切口的图案化垂直配向(PVA)模式的LCD随着进入侧向侧边而变得更亮并且颜色偏向白色。在严重的情况下,消除了明亮灰度之间的差异,因此图像变得很密集。然而,由于LCD近年来已经用于多媒体目的以显示静止或运动图像,所以越来越多地提高可见度成为关键问题。
发明内容
提供一种液晶显示器,包括:第一绝缘基板;形成在第一绝缘基板上的第一和第二信号线;形成在第一绝缘基板上并与第一和第二信号线交叉的第三信号线;连接到第一和第三信号线的第一和第二薄膜晶体管;连接到第二和第三信号线的第三和第四薄膜晶体管;连接到第一薄膜晶体管的第一像素电极;连接到第二薄膜晶体管的第二像素电极;连接到第三薄膜晶体管的第三像素电极;连接到第四薄膜晶体管的第四像素电极;导体图案,其与第二像素电极和第三像素电极交叠;面对第一绝缘基板的第二绝缘基板;形成在第二绝缘基板上的公共电极;置于第一和第二绝缘基板之间并包括在第二像素电极上的第一液晶区和在第三像素电极上的第二液晶区的液晶层;以及形成在第一和第二绝缘基板的至少一个上用于分别将第一和第二液晶区分割成多个畴的畴分割部件,其中第一和第二液晶区的每个的畴包括第一方向畴和第二方向畴,第一和第二方向畴中的液晶分子的平均定向器关于第一或第二信号线成约0-90°的预定角度,第二像素电极和第三像素电极通过该导体图案容性耦合。
优选第二像素电极占第二和第三像素电极的总面积的约50-80%,并在激励第二薄膜晶体管之后激励第三薄膜晶体管。
第二像素电极的阈值电压优选比第三像素电极的阈值电压低约0.4-1.0V。
该液晶显示器还可以包括形成在第一基板上的存储电极线,该存储电极线与第二和第三像素电极一起形成存储电容器。
第一和第二方向畴中的液晶分子的平均定向器优选关于第一或第二信号线成约45°角。
优选,该液晶显示器还包括置于第一基板的外表面上并且偏振轴平行于第一或第二信号线的第一偏振板、以及置于第二基板的外表面上并且偏振轴与第一偏振板的偏振轴交叉的第二偏振板。
提供一种薄膜晶体管阵列面板,包括:绝缘基板;形成在该基板上的第一和第二栅极线;形成在第一和第二栅极线上的栅极绝缘层;形成在栅极绝缘层上的半导体层;至少形成在半导体层上并与栅极线相交的数据线;至少形成在半导体层上并位于第一栅极线和数据线之间的相交部位附近的第一和第二漏极;至少形成在半导体层上并位于第二栅极线和数据线之间的相交部位附近的第三和第四漏极;形成在栅极绝缘层上的耦合电极;形成在数据线、第一到第四漏极和耦合电极上并具有露出第一到第四漏极和耦合电极的多个接触孔的钝化层;形成在钝化层上并连接到第一漏极的第一像素电极;形成在钝化层上并连接到第二漏极且与耦合电极部分交叠的第二像素电极;形成在钝化层上并连接到第三漏极和耦合电极的第三像素电极;和形成在钝化层上并连接到第四漏极的第四像素电极,其中第一和第四像素电极的至少之一具有倾斜切口。
提供一种液晶显示器,包括:第一绝缘基板;形成在第一基板上的第一和第二栅极线;形成在第一和第二栅极线上的栅极绝缘层;形成在栅极绝缘层上的半导体层;至少形成在半导体层上并与栅极线交叉的数据线;至少形成在半导体层上并位于第一栅极线和第二栅极线之间的交叉部位附近的第一和第二漏极;至少形成在半导体层上并位于第二栅极线和数据线之间的相交部位附近的第三和第四漏极;形成在栅极绝缘层上的耦合电极;形成在数据线、第一到第四漏极和耦合电极上并具有露出第一到第四漏极和耦合电极的多个接触孔的钝化层;形成在钝化层上并连接到第一漏极的第一像素电极;形成在钝化层上并连接到第二漏极且与耦合电极部分交叠的第二像素电极;形成在钝化层上并连接到第三漏极和耦合电极的第三像素电极;和形成在钝化层上并连接到第四漏极的第四像素电极;面对第一绝缘基板的第二绝缘基板;形成在第二绝缘基板上的公共电极;置于第一和第二绝缘基板之间的液晶层;以及形成在第一和第二绝缘基板的至少一个上并将液晶层分割成多个畴的畴分割部件,其中该畴的两个长边与栅极线或数据线基本上成约45°角。
优选地,第二像素电极占第二和第三像素电极的总面积的约50-80%,并且在给第二像素电极输送电压之后给第三像素电极输送电压。
第二像素电极的阈值电压优选比第三像素电极的阈值电压低约0.4-1.0V。
提供一种液晶显示器,包括:第一基板,包括多个像素电极、多个栅极线和多个传导线,每个像素电极包括第一像素电极和第二像素电极,每个传导线设置在两个相邻栅极线之间;面对第一基板的第二基板;置于第一基板和第二基板之间的液晶层;和设置在第一基板和第二基板中至少一个上并且将第一像素电极和第二像素电极划分为不同的方向畴的多个畴分割部件;其中包括第一畴部件和第二畴部件的多个畴分割部件倾斜于栅极线,传导线的第一部分被第一像素的一部分像素电极交叠,传导线的第二部分被第二像素的一部分像素电极交叠,其中第二像素电极的电压不同于第一像素电极的电压,和其中液晶层的分子被排列成使得在没有电场的情况下它们的主轴基本上垂直于第一基板和第二基板的表面。
附图说明
通过参照附图详细地介绍本发明的优选实施例使本发明的上述和其它优点更显而易见,附图中:
图1是根据本发明一实施例的LCD的电路图;
图2是根据本发明实施例的LCD的布局图;
图3A是沿着线IIIB-IIIB'截取的图2所示的LC面板组件的剖视图;
图3B是图3A中所示的TFT阵列面板的剖视图,该图是除了滤色器阵列面板和偏振膜之外的图3A中所示LC面板组件的一部分;
图3C是沿着线IIIC-IIIC'截取的图2中所示的TFT阵列面板的剖视图;
图4是表示作为电压偏移和畴比率(domain ratio)的函数的可见度的变形的曲线;
图5是表示传统图案化垂直配向(PVA)LCD(patterned-vertically-alignedLCD)的正视和侧视伽马曲线的曲线图;
图6是表示根据本发明一实施例的LCD的正视和侧视伽马曲线的曲线图;
图7表示常规PVA模式LCD的实测伽马曲线;以及
图8表示根据本发明一实施例的LCD的实测伽马曲线。
具体实施方式
下面参照附图更全面地介绍本发明,其中附图中示出了本发明的优选实施例。然而,本发明可以以很多不同的形式实施,并不限于这里所述的实施例。
在附图中,为清楚起见放大了层、膜和区域的厚度。相同的标记始终表示相同的部件。应该理解,当如层、膜、区域或基板的元件被称为“在另一元件上”时,它可以直接位于该另一元件上或其间可置入其它元件。相反,当元件被称为“直接位于另一元件上”时,指的是没有中间元件。
下面参照附图详细地介绍根据本发明实施例的LCD。
图1是根据本发明实施例的LCD的像素的等效电路图。
参见图1,根据一实施例的LCD包括多个显示信号线Gi、Dj和131、以及与之连接并基本上排列成矩阵的多个像素。
该显示信号线Gi和Dj包括输送栅极信号(称为扫描信号)的多个栅极线Gi和输送数据信号的多个数据线Dj。栅极线Gi基本上在行方向延伸并大致互相平行,数据线Dj基本上在列方向延伸并大致互相平行。
显示信号线131还包括位于栅极线Gi之间以及像素之间并被施以公共电压Vcom的多个存储电极线131。
每个像素Pij(i=1,2,…,n;j=1,2,…,m)包括一对子像素Pi,j 1和Pi,j 2,每个子像素Pi,j 1或Pi,j 2包括连接到成对的一条栅极线Gi和一条数据线Dj上的开关元件Q1或Q2、以及连接到开关元件Q1或Q2上的LC电容器CLC1或CLC2和存储电容器CST1或CST2
列方向上的两个相邻像素由耦合电容器CPP容性耦合。例如,像素Pij的上部子像素Pi,j 1与上部像素Pi-1,j的下部子像素Pi,j 2容性耦合,像素Pij的下部子像素Pi,j 2与下部像素Pi+1,j的上部子像素Pi+1,j 1容性耦合。
开关元件Q1或Q2具有三个端子:连接到栅极线G1-Gn之一的控制端子;连接到数据线D0-Dm之一的输入端子;和连接到LC电容器CLC1或CLC2、存储电容器CST1或CST2、以及耦合电容器CPP的输出端子。
LC电容器CLC1或CLC2连接在开关元件Q1或Q2和公共电压Vcom之间。存储电容器CST1或CST2连接在开关元件Q1或Q2和存储电极线131之间。
现在参照图2至3C详细介绍根据本发明实施例的用于LCD的LC面板组件。
图2是根据本发明实施例的LC面板组件的布局图,图3A是沿着线IIIB-IIIB'截取的图2中所示的LC面板组件的剖视图,图3B是图3A中所示的TFT阵列面板的剖视图,该图是图3A所示LC面板组件的除了滤色器阵列面板和偏振膜之外的部分。图3C是沿着线IIIC-IIIC'截取的图2中所示的TFT阵列面板的剖视图。
参见图3A,根据本实施例的LC面板组件包括TFT阵列面板100、面对TFT阵列面板100的滤色器阵列面板200、和置于其间的LC层3。
参见图2至3C,TFT阵列面板100包括多个栅极线121和多个存储电极线131,它们都形成在优选由透明玻璃制成的绝缘基板110上。每个栅极线121基本上在行方向延伸并包括多个栅极电极124。存储电极线131基本上在行方向延伸并部分地弯曲。
栅极绝缘层140形成在栅极线121和存储电极线131上,并且多个半导体岛154形成在栅极绝缘层140上,与栅极电极124相对。每个半导体岛154优选由非晶硅(“a-Si”)制成并形成TFT的沟道。在半导体岛154上形成优选由用N型杂质如磷(P)重掺杂的a-Si制成的多个欧姆接触部163、165a和165b。
在欧姆接触部163、165a和165b以及栅极绝缘层140上形成多个数据线171、多对漏极175a和175b以及多个耦合电极177。
每个数据线171基本上在列方向延伸并包括多个源极电极173,每个源极电极173与关于栅极电极124分开的一对漏极电极175a和175b相对设置。
每对漏极电极175a和175b关于栅极线124在相反方向延伸。
每个耦合电极177在列方向延伸并跨过存储电极线131。
半导体岛154的位于源极电极173和漏极电极175a和175b之间的部分暴露出来,并且欧姆接触部163、165a和165b只设置在半导体岛154与数据线171和漏极175a和175b之间。
钝化层180形成在数据线171、漏极电极175a和175b、以及耦合电极177上。钝化层180具有露出漏极电极175a和175b的端部的多个接触孔185a和185b、以及露出耦合电极177的端部的多个接触孔187。钝化层180还具有露出数据线171的端部179的多个接触孔182,并且钝化层180和栅极绝缘层140具有露出栅极线121的端部129的多个接触孔181。
多对像素电极190a和190b以及多个辅助接触部(contact assistant)81和92形成在钝化层180上。像素电极190a和190b以及辅助接触部81和92优选由透明导电材料如氧化铟锡(ITO)和氧化铟锌(IZO)或反光材料(reflective material)制成。
每对像素电极190a和190b包括分别通过接触孔185a和185b连接到漏极175a和175b的下部像素电极190a和上部像素电极190b。上部电极190b通过接触孔187连接到耦合电极177,下部电极190a与耦合电极177交叠,使得上部像素的下部像素电极190a和下部像素的上部像素电极190b容性耦合。此外,上部像素的下部像素电极190a和下部像素的上部像素电极190b跨过存储电极线131相对设置并与存储电极线131交叠,以形成多个存储电容器。像素电极190a和190b跨过存储电极线131相对的边缘弯曲以形成V字形,并且像素电极190a的V字形边缘是凸出的,而像素电极190b的V字形边缘是凹进的。
每个下部像素电极190a具有上、下和中间线形切口91-93。中间切口93位于列方向的中部并从左向右进入像素电极190a,由此将像素电极190a分割成上和下部分。上切口91和下切口92分别倾斜地在上和下部分中延伸,并关于中间切口93对称地设置。
辅助接触部81和82分别通过接触孔181和182连接到栅极线121和数据线171的露出的端部129和179,并且用于保护露出的端部129和179,但这是可选的。
配向层11涂敷在TFT阵列面板100的除了辅助接触部81和82以外的整个表面上。
一个栅极电极124、一个源极电极173、一对漏极电极175a和175b以及一个半导体岛154形成分别连接像素电极190a和190b的一对TFT。
参见图2和3A,滤色器阵列面板200包括形成在优选由透明玻璃形成的绝缘基板210上的黑矩阵220。黑矩阵220限定多个窗口,在窗口中形成多个红、绿和蓝色滤色器230。在滤色器上形成保护层,并在其上形成公共电极270。公共电极270优选由透明导电材料如ITO和IZO制成,并具有多组四个线形切口271-274。切口271-274中的三个切口271-273与下部像素电极190a交叠并与切口91-93一起将像素电极190a分成多个子区域。具有V字形状的切口274与上部电极190b交叠,以便将上部像素电极190b平分(bisect)成两个子区域。在滤色器阵列面板200的整个表面上涂敷配向层(alignment layer)21。
由切口91-93和271-273限定的每个子区域大致具有四边形形状,其两条长边与栅极线121和数据线171形成约45度角。由上部像素电极190b和切口274的边缘限定的子区域具有由两个四边形组合而成的V形。
一对偏振板12和22分别附着在面板100和200的外表面上。偏振板12和22的偏振轴交叉并且基本上平行于栅极线121或数据线171。
LC层3的分子排列成使得在没有电场的情况下它们的主轴基本上垂直于面板100和200的表面。
再参见图1,施加给像素的数据电压和公共电压Vcom之间的差表示为LC电容器CLC1或CLC2的充电电压,即像素电压。LC分子的取向取决于像素电压的幅度,并且该取向确定了通过LC电容器CLC1或CLC2的光的偏振。偏振板11和21将光的偏振化转变为光的透射率。
同时,假设用于像素Pup的数据电压和公共电压Vcom之间的差为dup,且在像素Pup的上部和下部子像素P1 up和P2 up的LC电容器CLC1和CLC2中充电的像素电压分别是V(P1 up)和V(P2 up)。此外,我们假设像素Pup的下部子像素P2 up和像素Pdown的上部子像素P1 down通过耦合电容器Cpp耦合,并且用于像素Pdown的数据电压和公共电压Vcom之间的差为ddown。此外,在给像素Pup输送数据电压之后,给像素Pdown输送数据电压。则满足下列关系式:
V = ( P up 1 ) = d up ; 和      (1)
V ( P up 2 ) = d up + C PP C LC 2 + C ST 2 + C PP · ( d down - d ′ down ) - - - ( 2 )
在等式1和2中,CLC2和CST2是下部子像素P2 up的LC电容器和存储电容器的电容,Cpp是耦合电容器的电容,并且d'down是施加于在先帧中的子像素P1 down的数据电压和公共电压Vcom之间的差。为便于说明,忽略了数据线Dj的导线电阻和信号延迟。
在等式2中,如果由于dup和ddown具有相同极性而使ddown和d'down具有相反的极性,像素Pdown显示与像素Pup相同的灰度,并且显示的图像是静止图像,则dup=ddown=-d'down,且等式2变为:
V ( P up 2 ) = d up + 2 d up C PP C LC 2 + C ST 2 + C PP = C LC 2 + C ST 2 + 3 C PP C LC 2 + C ST 2 + C PP d up = T 1 d up , - - - ( 3 )
其中, T 1 = C LC 2 + C ST 2 + 3 C PP C LC 2 + C ST 2 + C PP > 1 .
相反,如果dup和ddown具有相反极性,像素Pdown显示与像素Pup相同的灰度,并且显示的图像是静止图像,则等式2变为:
V ( P up 2 ) = d up + 2 d up C PP C LC 2 + C ST 2 + C PP = C LC 2 + C ST 2 - C PP C LC 2 + C ST 2 + C PP d up = T 2 d up , - - - ( 4 )
其中, T 2 = C LC 2 + C ST 2 - C PP C LC 2 + C ST 2 + C PP < 1 .
根据等式3和4,如果像素Pup的下部子像素P2 up与像素Pdown的上部子像素P1 down容性耦合,则在施加于两个子像素P2 up和P1 down的数据电压的极性相同时,用比在像素Pup的上部子像素P1 up中充电的电压高的电压给像素Pup的下部子像素P2 up充电,当极性相反时则反之。
像素包括两个开关元件和两个LC电容器并且相邻像素通过耦合电容器容性耦合的这种像素结构防止了底部观察时灰度的倒置,并提高了所有方向上的可见度。
图4是表示作为像素电极的电压偏移和面积比的函数的可见度失真(distortion in the visibility)的曲线。
图4中所示的垂直轴表示量化可见度失真的值,并且水平轴表示对于0、0.4V和0.6V电压偏移的下部和上部像素电极190a和190b之间的面积比(areal ratio)。
在0.1-0.2范围内的可见度失真意味着可见度特别优异,其等价于阴极射线管(CRT)的水平,而在0.2-0.25范围内的可见度失真意味着可见度很优异。在0.25-0.3范围内的可见度失真意味着可见度优异,并且在0.3-0.35范围内的可见度失真意味着可见度良好。然而,小于约0.35的可见度失真意味着可见度差,这将导致不良的显示质量。
从图4中可知,当下部像素电极与上部像素电极的面积比在50:50到80:20范围内时,且当电压偏移在接近于阈值电压Vth的0.4-1.0V范围内时,可获得优异的可见度。即,下部像素电极优选设计成比上部像素电极大。然而,当下部像素电极大于80%时,由于回扫电压(kickback voltage)或其它因素而可能产生各种问题,如闪烁现象。此外,当下部像素电极的阈值电压Vth比上部像素电极的阈值电压Vth低0.4-1.0V时,提高了可见度。下部和上部像素电极之间的用于更高灰度的电压差可以更大。
然后,下面参照图5和6说明根据本发明的LCD的可见度提高的原因。
图5是表示分别对于传统图案化垂直配向(PVA)LCD的正向观察和侧向观察的伽马曲线C1和C2的曲线图,图6是表示分别对于根据本发明实施例的LCD的正向观察(front view)和侧向观察(lateral view)的伽马曲线C3和C4的曲线图。
如图5所示,对于一个像素具有一个像素电极的传统PVA LCD的侧向伽马曲线C2与正向伽马曲线C1相比大大地向上变形。
然而,根据本发明的实施例,当建立数据电压使得施加于下部子像素的像素电压低于通常的数据电压时,对于低一些的灰度,下部子像素的电压可保持低于阈值电压Vth。相应地,下部子像素可保持在黑色状态,而上部子像素呈现透射状态,如图6中的附图标记A所示。然而,由于上部像素电极的面积小,因此总亮度小于传统LCD的总亮度。对于等于或大于预定值的灰度(由附图标记B所示),下部子像素的电压超过阈值电压Vth,因此下部子像素也对总亮度起作用。因此,取决于灰度增加的亮度的增加增大了。因而,如图6所示,伽马曲线的失真变小。
图7示出了传统PVA模式LCD的实测的伽马曲线,图8表示根据本发明实施例的LCD的实测伽马曲线。
比较图7和8所示的伽马曲线,可知根据本发明实施例的LCD的所有方向的伽马曲线失真小于传统LCD的所有方向的伽马曲线失真。
如上所述,一个像素配置两个像素电极和两个TFT,并且相邻两个像素的两个像素电极容性耦合,由此提高了所有方向的可见度。此外,由于进行区域分割使得液晶分子的平均定向器(average director)与栅极线或数据线成45度角,所以可以使用具有平行于栅极线或数据线的偏振轴的偏振板。因而,可以降低制造偏振板的成本。
虽然前面已经详细说明了本发明的优选实施例,但是应该清楚理解,对本领域普通技术人员显然的、对此处所教导的基本发明原理的诸多改变和/或修改仍为所附权利要求所限定的本发明的精神和范围所涵盖。

Claims (17)

1.一种液晶显示器,包括:
第一基板,包括多个像素电极、多个栅极线和多个传导线,每个像素电极包括第一像素电极和第二像素电极,每个传导线设置在两个相邻栅极线之间;
面对所述第一基板的第二基板;
置于所述第一基板和第二基板之间的液晶层;和
设置在所述第一基板和第二基板中至少一个上并且将所述第一像素电极和所述第二像素电极划分为不同的方向畴的多个畴分割部件;
其中包括第一畴部件和第二畴部件的所述多个畴分割部件倾斜于所述栅极线,所述传导线的第一部分被第一像素的一部分像素电极交叠,所述传导线的第二部分被第二像素的一部分像素电极交叠,
其中所述第二像素电极的电压不同于所述第一像素电极的电压,和
其中所述液晶层的分子被排列成使得在没有电场的情况下它们的主轴基本上垂直于所述第一基板和第二基板的表面。
2.如权利要求1所述的液晶显示器,其中所述第一畴部件和所述第二畴部件与所述栅极线成约45度角。
3.如权利要求1所述的液晶显示器,其中所述第一畴部件和第二畴部件或者所述第一畴部件和第二畴部件的假想延长线彼此相会。
4.如权利要求3所述的液晶显示器,其中至少一个所述第一畴部件或至少一个所述第二畴部件是切口。
5.如权利要求1所述的液晶显示器,其中所述第一畴部件和第二畴部件关于所述栅极线和所述传导线之间的第一线基本对称地布置,所述第一线基本平行于所述栅极线。
6.如权利要求1所述的液晶显示器,还包括设置在所述第一基板上的第一偏振板和设置在所述第二基板上的第二偏振板,其中所述第一畴部件和第二畴部件关于所述第一偏振板和第二偏振板的偏振方向成约45度角。
7.如权利要求6所述的液晶显示器,其中所述第一像素的像素电极连接到第一TFT的第一漏电极,所述第二像素的像素电极连接到第二TFT的第一漏电极。
8.如权利要求7所述的液晶显示器,其中所述第一TFT和第二TFT中的每个包括第二漏电极,所述第二漏电极分别连接到第三像素电极和第四像素电极。
9.一种液晶显示器,包括:
第一绝缘基板;
形成在所述第一绝缘基板上的第一栅极线和第二栅极线;
数据线,形成在所述第一绝缘基板上并与所述第一栅极线和第二栅极线交叉;
电连接到所述第一栅极线和数据线的第一薄膜晶体管;
电连接到所述第二栅极线和数据线的第二薄膜晶体管;
像素电极,包括连接到所述第一薄膜晶体管的第一像素电极和连接到所述第二薄膜晶体管的第二像素电极;
耦合电极,连接到所述第一像素电极并且与所述第二像素电极交叠;
面对所述第一绝缘基板的第二绝缘基板;
形成在所述第二绝缘基板上的公共电极;
形成在所述第一和第二绝缘基板的至少一个上用于分别将所述第一和第二像素电极分割成多个畴的畴分割部件;和
置于所述第一绝缘基板和第二绝缘基板之间的液晶层,其包括液晶分子,该液晶分子的主轴在没有电场的情况下基本垂直于所述第一绝缘基板的表面,
其中所述第二像素电极的电压不同于所述第一像素电极的电压。
10.如权利要求9所述的液晶显示器,其中所述导体图案是存储电极线。
11.如权利要求10所述的液晶显示器,还包括形成在所述第一绝缘基板和第二绝缘基板的至少一个上用于分别将第一液晶区和第二液晶区分割成多个畴的畴分割部件。
12.如权利要求11所述的液晶显示器,其中所述畴分割部件包括所述第一像素电极的第一畴分割部件和所述公共电极的第二畴分割部件。
13.如权利要求12所述的液晶显示器,其中所述第一畴分割部件和所述第二畴分割部件被交替设置并且包括倾斜于所述第一栅极线的倾斜部分。
14.如权利要求13所述的液晶显示器,其中所述第一像素电极占所述第一像素电极和第二像素电极的总面积的50-80%。
15.如权利要求14所述的液晶显示器,还包括:
第三薄膜晶体管,电连接到所述第一栅极线和数据线;
第四薄膜晶体管,电连接到所述第二栅极线和数据线;
连接到所述第三薄膜晶体管的第三像素电极;和
连接到所述第四薄膜晶体管的第四像素电极。
16.如权利要求9所述的液晶显示器,还包括:
第三薄膜晶体管,电连接到所述第一栅极线和数据线;
第四薄膜晶体管,电连接到所述第二栅极线和数据线;
连接到所述第三薄膜晶体管的第三像素电极;和
连接到所述第四薄膜晶体管的第四像素电极。
17.一种液晶显示器,包括:
第一绝缘基板;
形成在所述第一绝缘基板上的第一栅极线和第二栅极线;
数据线,形成在所述第一绝缘基板上并与所述第一栅极线和第二栅极线交叉;
第一薄膜晶体管,电连接到所述第一栅极线和数据线;
第二薄膜晶体管,电连接到所述第二栅极线和数据线;
像素电极,包括连接到所述第一薄膜晶体管的第一像素电极和连接到所述第二薄膜晶体管的第二像素电极;
耦合电极,连接到所述第一像素电极并且与所述第二像素电极交叠;
面对所述第一绝缘基板的第二绝缘基板;
形成在所述第二绝缘基板上的公共电极;
形成在所述第一和第二绝缘基板的至少一个上用于分别将所述第一和第二像素电极分割成多个畴的畴分割部件;和
置于所述第一绝缘基板和第二绝缘基板之间的液晶层,
其中所述第二像素电极的电压不同于所述第一像素电极的电压,
其中所述液晶层的分子被排列成使得在没有电场的情况下它们的主轴基本上垂直于所述第一基板和第二基板的表面,和
其中所述第一像素电极和第二像素电极的至少一个具有倾斜于所述第一栅极线的第一畴分割部件。
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