CN102763225A - 使用半导体晶片的高效率光伏背结背触点太阳能电池结构和制造方法 - Google Patents

使用半导体晶片的高效率光伏背结背触点太阳能电池结构和制造方法 Download PDF

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CN102763225A
CN102763225A CN2010800633038A CN201080063303A CN102763225A CN 102763225 A CN102763225 A CN 102763225A CN 2010800633038 A CN2010800633038 A CN 2010800633038A CN 201080063303 A CN201080063303 A CN 201080063303A CN 102763225 A CN102763225 A CN 102763225A
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CN102763225B (zh
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M·M·穆斯利赫
P·卡普尔
K·J·克拉默
D·X·王
S·苏特
V·V·雷纳
A·卡尔卡特拉
E·范·科斯查伟
D·哈伍德
M·曼苏里
M·温格特
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Beamreach Solexel Assets Inc
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Abstract

本发明提供一种使用半导体晶片的背结背触点太阳能电池及其制造方法。该背结背触点太阳能电池包括具有掺杂的基极区域、光俘获正面表面和掺杂的背面发射极区域的半导体晶片。正面和背面介电层和钝化层提供增强光阱和内反射。将背面基极和发射极触点连接至金属互连件，所述金属互连件在太阳能电池背面形成由叉指状电极和汇流条形成的金属化图案。

Description

使用半导体晶片的高效率光伏背结背触点太阳能电池结构和制造方法
相关申请
本申请要求2009年12月9日提交的61/285140临时专利申请的权益，其据此通过引用并入本文中。
技术领域
本发明总体上涉及光伏和太阳能电池技术领域，更具体地涉及背结背触点薄太阳能电池和制造方法。
背景技术
目前晶体硅在光伏(PV)产业的市场份额最大，占整个PV市场的80%以上。尽管制造更薄的晶体硅太阳能电池长期以来被认为是降低PV费用最有效的方法之一(因为太阳能电池中使用的晶体硅片相对较高的材料费用占了PV模块总费用的一部分)，但是由于晶片较大较薄，且在一定程度上较薄结构中存在光阱，使得这其中仍存在很多机械破损问题。要实现成本效益，PV制造工厂的产量必须要很高，因此高机械产量和降低晶片破损率的要求更加困难。对于独立式晶体硅太阳能电池(无支撑)而言，比当前的厚度范围140μm-250μm再稍微降低一点也会在制造过程中严重危害到机械产量。因此，处理非常薄的太阳能电池结构的任何方案应当是在整个电池工艺中由主载体完全或部分地支撑，或者应该是具有相伴的能提供刚性的创新结构的、新颖的自承载式独立基片。通常，高效的太阳能电池使用昂贵的图案技术，如石版印刷术来制造。由于减少了硅的使用及工艺的简化，在保障高性能，高效电池设计的同时，该技术可大大降低费用。
对于太阳能电池发展和制造而言，以较低制造成本获得较高的电池和模块效率一直以来是一项重要任务。主要由于电池正面无金属遮挡、无发射极以及由此导致的高蓝光响应，并且由于背面潜在的低金属阻抗，因此背结/背触点电池结构具有高效性。尽管上述薄衬底和载体方法总的来说能够用于任何电池结构，但这对背结/背触点电池来说特别有益。本领域的技术人员知道背结/背触点电池需要较高的扩散长度与衬底厚度比，典型地该比值>5。在传统的电池中，由于不容易降低电池厚度，因此获得长寿命的材料就成为了重点，此种材料可以使得少数载流子的扩散长度更长，但也增加了晶片费用。在薄的电池中，除了体积小得多的硅，扩散长度不必非得那样高，以降低材料质量要求。
发明内容
根据本发明，提供了用于制造背触点/背结太阳能电池的创新结构和方法。
在一个实施例中，提供了一种使用半导体晶片的背结背触点太阳能电池和制造方法。该背结背触点太阳能电池包括具有掺杂的基座区域，光俘获正面表面和掺杂的背面发射器区的半导体晶片。正面和背面介电层和钝化层提供增强光阱和内反射。将背面基座和发射器触点连接至金属互连件，所述金属互连件在太阳能电池背面形成由叉指状电极和汇流条形成的金属化图案。
通过此处提供的描述，本发明以及其它新颖特征将会变得明显。本发明内容的意图不是对所要求的主题进行综合描述，而是对本发明主题的功能性进行简短的概述。对以下附图和详细说明进行审阅时，此处提供的其它系统、方法、特征和优点对于本领域的技术人员来说将变得明显。本发明内容的意图是将所有包含在本说明内的这些额外的系统、方法、特征和优点包括在附随的权利要求的范围内。
附图说明
现参考以下结合附图的描述，以便对本发明主题及其优点有一个更全面的理解，附图中相似的标号表示相似的特征，并且其中：
图1是块状硅晶片制成的背触点太阳能电池剖面图；
图2是用于制作太阳能电池的制造工艺流程的框图；
图3(a-i)是在关键工艺步骤之后，根据图2制造的太阳能电池的剖面示意图；
图4(a-b)示出具有连续板（through plate）开口或栅状肋条结构的两种背面增强板的背面视图；
图5(a-b)示出两个示例性的金属汇流条设计；
图6是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图7是用于制作图6中太阳能电池的制造工艺流程的框图；
图8是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图9是用于制作图8中太阳能电池的制造工艺流程的框图；
图10是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图11是用于制作图10中太阳能电池的制造工艺流程的框图；
图12是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图13是用于制作图12中太阳能电池的制造工艺流程的框图；
图14(a-k)是在关键制造工艺步骤之后，根据图12制造的太阳能电池的剖面示意图；
图15是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图16是用于制作图15中太阳能电池的制造工艺流程的框图；
图17是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图18是用于制作图17中太阳能电池的制造工艺流程的框图；
图19是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图20是用于制作图19中太阳能电池的制造工艺流程的框图；
图21是块状硅晶片制成的背触点太阳能电池的剖面示意图；
图22是用于制作图21中太阳能电池的制造工艺流程的框图；以及
图23(a-k)是在关键制造工艺步骤之后，根据图21制造的太阳能电池的剖面示意图。
具体实施方式
以下说明不应从限制意义上理解，其目的是为了描述本发明的一般原理。本发明的范围应该根据权利要求而定。本发明的示例性实施例在附图中得到阐明，相同标号在附图中表示相同或相应部件。
下文中描述了由硅块制成的薄晶片上的各种背触点电池(BLAC电池)。具体地，晶片可以使用钢丝锯或通过质子移植和分离制成。尽管采用NBLAC电池作解释之用(NBLAC由N-型基极掺杂定义），但是本发明的结构和方法的范围不是要仅限于NBLAC电池，因为本领域的技术人员可以将本发明应用到PBLAC电池(PBLAC由p-型基座掺杂定义，如基于硼的PBLAC)。本发明包括2个子部分:1)在第一子部分中，工艺流程包括在晶片上使用外延沉淀来生长发射极，其与使用外延生长的整个基片相对。在第二部分中，通过在熔炉中使用气相扩散或使用常压化学气相淀积(APCVD)，在晶片的表面区域形成发射极。对于NBLAC电池(具有n-型基座)而言，发射极是p-型，典型地都基于硼，并且通过在熔炉中掺杂硼或在晶片表面沉积APCVD BSG后进行退火而形成。
图1是块状硅晶片制成的背触点太阳能电池剖面示意图。这种太阳能电池实施例指的是Flow-1.1电池。除了在触点下，背触点太阳能电池到处都是有轻掺杂物的外延发射极(触点下面重掺杂以形成选择性的发射极触点)，双面热氧化物和LPCVD氮化硅薄层，激光烧蚀的触点开口，喷墨印刷的掺杂物，化学镀金属化，和衬底增强。氧化层可以将正面和背面钝化，而LPCVD氮化硅作为抗反射涂层可用于前表面，作为湿法腐蚀停止层可在晶片背面上进行处理。如示例所示，衬底增强板对准地附接到电池的背面。背面增强板可以是带有通孔的连续板，所述通孔用于接近太阳能电池背面的发射极和基极金属母材触点。可替代地，背面增强板可以有一个或多个较大的类似于栅格形状结构的开口，以便更轻且更容易在太阳能电池模块层接近衬底背面。
起始硅晶片可以是CZ或FZ晶片。薄硅衬底可以通过锯开硅锭然后选择性地进行表面磨削或抛光形成，或者通过从厚的硅晶片上通过劈裂/分离形成。对于给定的少数载流子平均使用寿命而言，晶片最好足够薄以便使扩散长度对晶片厚度的比值>5。另一方面，晶片应该强韧以便能够经得住加工和处理环境。硅晶片的厚度优选在50μm到250μm的范围内。硅衬底的形状可以是方形或带有圆角的伪方形。为了避免在后续处理步骤中晶片出现断裂，优选地磨光薄晶片的边缘以消除边缘处的裂缝。
图2是用于制作Flow-1.1太阳能电池的制造工艺流程框图。图3(a-i)为关键制造工艺步骤之后，Flow-1.1太阳能电池的剖面示意图。如图表2中所示，太阳能电池的制造工艺从结构化处理（texturing）开始。对太阳能电池的正面表面进行结构化处理以便降低反射的光学耗损。表面结构通过在稀释的碱性溶液如KOH溶液中蚀刻形成。在低浓度的KOH中蚀刻，硅中不同晶体平面的蚀刻速率不同。结果形成了随机分布具有各种尺寸的金字塔状。结构化工艺可在单面蚀刻设备中进行，其中仅仅硅衬底的正面与蚀刻溶液接触，或者可替代地，在批量蚀刻过程中，通过将衬底浸入蚀刻溶液中对硅衬底的两个侧面进行结构化处理。然而，在另一种可选择的结构化方法中，可以通过激光表面烧蚀来进行结构化。由于用具有合适波长、功率和占空比的激光束对硅正表面进行扫描，因此形成了具有无规则尺寸和形状的微表面空腔。激光烧蚀之后，可用稀释的KOH溶液进行蚀刻以除去硅碎片以及进一步加强表面结构化。结构化工艺之后，采用标准RCA清洗步骤对晶片进行清洗，该标准RCA清洗步骤包括有机清洗步骤（被称为SC1)和金属污染清洗步骤(被称为SC2)。图3(a)显示了正面结构化工艺之后，硅衬底的剖视图。
在下一步骤中，如图3(b)所示，在硅背面表面的顶部生长薄的外延硅发射极层。在n-型硅衬底情况下，外延发射极层为p-型原位掺杂，如外延生长工艺中的硼掺杂。与基于扩散的掺杂工艺相比，原位外延掺杂可以提供掺杂分布，掺杂分布可被调整以适应可能的最佳开路电压(Voc)和电流密度(Jsc)。例如，外延掺杂可在层厚度内保持恒定或连续变化(或被分级)，或采用多步骤掺杂，每一个掺杂步骤都可导致不同的掺杂浓度。通常，这可以促使太阳能电池具有高的开路电压，从而实现更高的效率。外延发射极层优选厚度为0.5μm到3μm。
如图2所示，下一个步骤是表面钝化层和抗反射涂层(ARC)沉积。由于衬底表面处硅晶体结构的缺陷比衬底块中硅晶体结构的缺陷更常见，因此对于晶体硅太阳能电池而言，降低表面缺陷处的载流子复合是实现高效率的一个重要条件，对于薄且大的硅晶片来说更加重要，因为此种硅晶片的面容比较大。用介电层进行表面钝化是一种降低表面载流子复合速率的有效方法，因为好的表面钝化层能降低表面状态密度。在图2中，厚度范围为3nm到100nm的热生长硅氧化物薄层被用于正面表面和背面表面的钝化。图3(c)示出在薄热氧化层生长后晶片的剖视图，显示硅晶片两面都出现薄氧化层。
在薄热氧化层的顶部沉积有厚度优选在60nm到100nm范围内的薄LPCVD氮化硅层。可替代地，背面的氧化物/氮化硅层可以用一种厚度相似的铝氧化层来代替，以提供p-型发射极的表面钝化。LPCVD氮化硅层至少可用于3个目的：(1)光学上，与薄氧化层结合后，氮化硅层表面可在前表面作为抗反射涂层(ARC)层以及增强型内部光学反射层从而在前表面实现更好的光阱。在背面表面，厚度适当的氧化物和氮化物(或铝氧化物)层与沉积在背面表面的金属层结合后提供增强的内部光学反射，用作为部分背面反射镜效应。(2)机械上，LPCVD氮化硅层(或背面的铝氧化层)保护硅表面和薄硅氧化物表面在电池处理过程中不被划伤。它也可用作阻挡层来避免杂质和金属扩散到硅表面，从而避免或减少分流。(3)化学上，氮化硅和铝氧化层，特别是LPCVD氮化硅层，可在后续电池处理步骤中提供好的抗化学腐蚀层，如在对分配的液体掺杂物进行退火后在稀释的HF-based蚀刻剂中除去掺杂的玻璃。在图2显示的Flow-1.1太阳能电池的实施例中，LPCVD氮化硅薄层在衬底的两侧被沉积于氧化层顶部。图3(d)显示了LPCVD氮化硅沉积后衬底的剖视图。
如图2所示，下一个步骤是在上述的介电层内形成触点开口的叉指状行，这样下面的硅就可暴露出来。总的来说，在其中介电质是开放的图案是叉指状电极(finger)和汇流条(busbar)，其中基极和发射极线是分离且连续的、或是一串不重叠的点。基极和发射极触点开口的目的是为了后续的选择性掺杂。在NBLAC实施例中，基极触点开口将会用n-型磷材料进行重掺杂，而发射极触点开口将会用p-型硼进行重掺杂。在此步骤中，基极和发射极的开口区域被同时打开。这一步骤的具体实施可直接用激光烧蚀氧化层来进行。可见或紫外线波长的脉冲皮秒激光有利于烧蚀氧化层。图3(e)示出电介质基极和发射极开口的剖面图。
如图2所示，下一步骤旨在按照之前确定的叉指状图案，选择性地将n-型和p-型掺杂物添加到基极和发射极的触点开口区域内。掺杂物会将开口覆盖并且能与介电层(在其顶部)略微重叠。对于NBLAC具体实施例而言，发射极区域的掺杂物须为p++型(例如基于硼)，而在基极触点区域的掺杂物须为n++型(基于磷材料）。实施掺杂的具体方法是使用喷墨印刷技术。此外，要被处置的墨汁的具体例子为基于硅纳米粒子的磷墨汁和硼墨汁。紧接此步骤的下一步骤是选择性的，即使用喷墨印刷机将无掺杂硅(或玻璃)纳米粒子墨汁印刷到所有电池区域(或除激光烧蚀触点之外的区域)。下一步是按照具体的墨汁加工指令烧结墨汁。无掺杂墨汁的目的是用其对氧化物表面随机地结构化以提高背反射镜的朗伯（Lambertian）性能，从而提高效率。图3(f)示出喷墨印刷的(和选择性烧结的)基极和发射极掺杂物以及形成毯状物（blanket）结构化表层的喷墨印刷的无掺杂硅纳米粒子。
如图2所示，下一步骤是退火喷墨印刷的硼墨汁、磷墨汁和无掺杂墨汁以便形成n++和P++发射极触点区域。此外，退火步骤后可在低氧环境中再次退火或与此结合起来，低氧环境用于氧化无掺杂硅粒子并产生随机结构化的氧化物表面。图3(g)示出选择性掺杂的基极和发射极区域以及表面结构化的硅氧化层。
如图2所示，下一步骤是金属化。首先，在稀释的HF溶液中清洁衬底背面以除去残留的掺杂物(磷和硼玻璃)。LPCVD氮化物可停止掺杂物残留蚀刻。接下来，清洁触点区域以便很好实现金属附着和电接触。可选择性地利用温和的硅腐蚀来清洁该区域。尽管有几种方式可进行金属化，然而只描述具有一些变型的具体实施方式以作解释之用。例如，可以化学地镀上镍/铜/镍(Ni/Cu/Ni)金属堆，铜厚度在10到50μm范围内。铜下方的薄镍层可用作铜阻挡层以避免铜扩散到硅，而铜层顶部的镍层可用作钝化层以避免铜表面的氧化和腐蚀。大体上，镀的方案可以是电镀、化学液或乳液、或其他金属镀技术(优选方案是化学镀，且金属选择为Ni+Cu+Ni堆栈)。然而，不论是对于阻挡层(Ni)还是主要的(Cu)金属来说，都不局限于此堆栈。另一种可能性是Ni/Ag堆栈。图3(h)示出背面金属化步骤后所制造的太阳能电池的剖面示意图。
如图2所示，电池制作过程的最后一个步骤是在太阳能电池的背面施加加强板。如果太阳能电池的硅衬底很薄，比如薄于150μm，则该步骤是必要的。加强板的材料优选是PV-级材料，如PTFE。PTFE板/片可通过粘着层如PV-级EVA、Z68或硅树脂预压。在将PTFE板压覆到太阳能电池上之前，要先制成通孔或开口，以便从背面接近导电金属触点。可通过机械钻孔/冲压或通过激光切割来形成开口或通孔。最后一个步骤中，如图3(i)所示，具有粘着层的图案化的PTFE适当对准后被压覆到太阳能电池的背面。
图4(a-b)示出具有可通过开口和栅板状肋条结构的两种背面增强板的背面视图。如图4(a)所示，PTFE加强板具有规则的通孔开口，以便接近太阳能电池背面金属触点。PTFE板的厚度优选在0.1mm到0.5mm的范围内。根据太阳能电池背面金属电极的图案和厚度，通孔直径优选在1mm到5mm的范围内，通孔间距优选在5mm到50mm的范围内。如图4(b)所示，栅格形状的背面加强板也可为薄的太阳能晶片提供机械支撑。网格线的宽度可在0.3mm到1mm的范围内，网格线的厚度可在50μm到300μm的范围内。开口的形状可以是提供接近电池背面的正方形，矩形、圆形或其它形状。在所示的正方形的情况下，其尺寸可在5mm*5mm到50mm*50mm的范围内。
图5(a-b)示出两个示例性的金属汇流条设计。薄而高效的电池设计的一个重要特性是其汇流条设计。标准汇流条设计是具有叉指状金属图案的双汇流条设计，如图5(a)所示。一个考虑是背面需要厚金属，因为电极需要将电流从衬底的一边全程带到另一边。这些线产生了大的电力耗损。厚度典型地在30μm以上的较厚金属相对于厚度约为150μm的标准硅电池能正常工作。然而，薄硅衬底(<150μm)背触点式太阳能电池可能经不住厚度大于30μm铜金属线的压力。因此，汇流条设计中需要替代方案以实现薄且高效的背触点电池。
图5(b)示出分布式的汇流条设计。此处，有N个汇流条用于发射极，并且相同数量的汇流条用于基极区域(图3是N=3的设计)。这种设计的一个优点在于较细的栅线负责将电流运送较短的距离，因此极大地减轻电阻耗损。所有的发射极汇流条连在一起，且所有的基极汇流条连在一起。对于N对汇流条来说，与标准的N=1(双汇流条)相比，汇流条电流降低N倍。这就允许铜的厚度减小N倍而不影响电阻耗损，使得N=3-4时，铜的厚度在5-10μm之间。对于薄的硅电池而言，这是主要的优点。分布式汇流条的可能情况是增大的触点复合以及较大的金属触点区域引起的电屏蔽。然而，通过槽式汇流条设计可使其有所缓和，其中与底层硅的接触是在槽中，但是悬伸的金属连在一起形成一条连续的线，这就需要插槽间的间距不能大于金属厚度的两倍。应注意汇流条设计可上面讨论的工艺流程分开，因为它仅仅规定了图案，在该图案中激光烧蚀电介质和薄金属层。
图6是由块状硅晶片制成的背触点太阳能电池的剖面示意图，该电池以下简称为Flow-1.2电池。所述背结/背触点太阳能电池具有除了触点下面(在此进行重掺杂以形成选择性发射极触点)以外到处都是的轻掺杂的外延发射极、用于钝化和抗反射涂层(ARC)的正面和背面PECVD氮化硅和热氧化物薄层、可选择的背面PECVD铝氧化物(在背面替代氧化物/PECVDSiN)、激光烧蚀的触点开口、喷墨印刷的掺杂物、化学镀金属化、以及衬底增强。如示例所示，衬底增强板对准地附接到电池的背面。Flow-1.2电池和Flow-1.1电池的区别在于Flow-1.2电池使用两个分离的PECVD氮化硅(或背面铝氧化物)沉积代替了Flow-1.1电池中的单步双面LPCVD氮化硅沉积。改变的目的在于：(1)从电的角度而言，它由PECVD氮化硅膜内部绝缘固定的电荷提供了内置电场用于排斥少数载流子进入硅表面的电势复合场；(2)PECVD氮化硅或铝氧化物沉积的温度范围为300400摄氏度，比LPCVD氮化硅沉积的温度范围700-800摄氏度要低得多(较低的沉积温度不仅对衬底掺杂分布的影响较小，还可以降低制造费用)；(3)正面和背面的PECVD沉积是分开的，这就使得正面和背面钝化层的厚度和特性可以独立地调整从而对钝化、抗反射、和全内反射效果的电学和光学性能进行优化。
图7是用于制作图6中Flow-1.2太阳能电池的制造工艺流程的框图。正如描述的那样，与Flow-1.1电池相比，不同之处在于Flow-1.2电池框图中的第四个步骤，其中PECVD氮化硅沉积在正面而铝氧化物或PECVD氮化硅沉积在背面。其余的工艺顺序和步骤与Flow-1.1的相同。
图8是块状硅晶片制成的背触点太阳能电池的剖面示意图。该太阳能电池被称为Flow-2.1电池。该背触点太阳能电池具有稍前描述的外延选择性发射极(ESE)、分别用于钝化和抗反射涂层(ARC)的双面热氧化物和LPCVD氮化硅薄层、激光烧蚀的触点开口、喷墨印刷的掺杂物、喷墨沉积的金属墨汁、化学镀金属化、和衬底增强。如示例所示，衬底增强板对准地附接到电池的背面。Flow-2.1电池与描述的Flow-1.1电池的不同之处在于在化学镀金属化工艺之前有金属喷墨印刷和烧结步骤。金属墨汁，诸如铝(Al)和银(Ag)纳米粒子墨汁，可选择性地沉积在基极和发射极触点区域的顶部。墨汁按照发射极和基极的电极和汇流条的形状沉积。喷墨印刷后，印刷的铝墨汁在高温下进行烧结，烧结温度在500-575摄氏度之间，此温度也可烧结银墨汁。增加的喷墨印刷和烧结步骤的优点在于提供与硅更好的电接触。
图9是用于制造Flow-2.1太阳能电池的制造工艺流程的框图。与Flow-1.1电池相比，不同之处在于Flow-2.1电池的框图中化学镀之前增加的步骤。增加的步骤是在汇流条和叉指状电极上喷墨印刷AL/Ag或Ni纳米粒子墨汁，加上可选的热退火/烧结。其余的工艺顺序和步骤与所描述的Flow-1.1电池的工艺顺序和步骤相同。
图10是块状硅晶片制成的背触点太阳能电池的剖面示意图。该太阳能电池被称为Flow-2.2电池。背触点太阳能电池具有稍前描述的外延选择性发射极(ESE)、用于钝化和抗反射涂层(ARC)的正面和背面PECVD氮化硅和热氧化物薄层、可选的背面PECVD铝氧化物、激光烧蚀的触点开口、喷墨印刷的掺杂物、喷墨沉积的金属墨汁、化学镀金属化、和衬底增强。如示例所示，衬底增强板，对准地附接到电池的背面。Flow-2.2电池和Flow-2.1电池的区别在于Flow-2.2电池使用两个分离的PECVD氮化硅(或背面铝氧化物)沉积替换了Flow-2.1电池中的单级双面LPCVD氮化硅沉积。
图11是用于制造Flow-2.2太阳能电池的制造工艺流程的框图。正如描述的那样，与Flow-2.1电池相比，不同之处在于Flow-2.2电池框图中第四个步骤，其中PECVD氮化硅沉积在正面而铝氧化物或PECVD氮化硅沉积在背面。其余的工艺顺序和步骤与所描述的Flow-2.1电池的工艺顺序和步骤相同。
图12是块状硅晶片制成的背触点太阳能电池的剖面示意图。该太阳能电池被称为Flow-3.1电池。该背触点太阳能电池具有外延选择性发射极(ESE)(前面已描述了形成选择性发射极的步骤)、分别用于钝化和抗反射涂层(ARC)的双面PECVD氮化硅和热氧化物薄层、可选的背面PECVD铝氧化物、激光烧蚀的触点开口、喷涂的掺杂物、化学镀的金属化、和衬底增强。如所示，衬底增强板，作为例子，对准地附接到电池的背面。Flow-3.1电池的最终结构与图1所示的Flow-1.1电池的最终结构相同。然而，制造工艺中掺杂物沉积方法和触点开口顺序略微不同。具体地，磷液体掺杂物和硼液体掺杂物在不同的步骤中喷涂，且每一个极的触点开口刚好在分开的液体掺杂物涂层步骤之前形成。
图13是用于制造Flow-3.1太阳能电池的制造工艺流程的框图。图14(a-k))为关键制造工艺步骤之后，Flow-3.1太阳能电池的剖面示意图。所示步骤包括表面结构化、薄外延发射极层生长、热氧化和LPCVD氮化硅沉积步骤，这与图2和图3(a-d)中所示和描述的Flow-1.1电池的步骤相同。如图14(e)所示，在下一步骤中，只有基极接点通过脉冲激光烧蚀被打开。然后喷涂磷液体掺杂物，图14(f)显示修复的磷掺杂物层。接下来，如图14(g)所示，通过脉冲激光烧蚀硅表面之上的介电层堆栈，发射极触点被打开。然后如图14(h)所示，喷涂发射极(硼)掺杂物液体进行修复。其余的电池处理步骤从图14(i)到14(k)与所描述的Flow-1.1电池的步骤相同。
图15是块状硅晶片制成的背触点太阳能电池的剖面示意图。该太阳能电池被称为Flow-3.2电池。该背触点太阳能电池具有外延选择性发射极(ESE)(前面已描述了形成选择性发射极的步骤)、用于钝化和抗反射涂层(ARC)的正面和背面PECVD氮化硅和热氧化物薄层、可选的替代氮氧化物/氮化硅层状结构的背面PECVD铝氧化物、激光烧蚀的触点开口、喷涂的掺杂物、化学镀的金属化、和衬底增强。如示例所示，衬底增强板对准地附接到电池的背面。Flow-3.2电池和Flow-3.1电池的区别在于Flow-3.2电池使用两个分离的PECVD氮化硅(或背面铝氧化物)沉积替换了Flow-3.1电池中的单级双面LPCVD氮化硅沉积。
图16是用于制造Flow-3.2太阳能电池的制造工艺流程的框图。正如描述的那样，与Flow-3.1电池相比，不同之处在于Flow-3.2电池框图中第四个步骤，其中PECVD氮化硅沉积在正面，而铝氧化物或PECVD氮化硅沉积在背面。其余的工艺顺序和步骤与所描述的Flow-3.1电池的工艺顺序和步骤相同。
图17是块状硅晶片制成的背触点太阳能电池的剖面示意图。该太阳能电池被称为Flow-4.1电池。该背触点太阳能电池具有外延选择性发射极(ESE)(前面已描述了形成选择性发射极的步骤)、分别用于钝化和抗反射涂层(ARC)的双面PECVD氮化硅和热氧化物薄层、激光烧蚀的触点开口、喷涂的掺杂物、喷墨沉积的金属墨汁、化学镀的金属化、和衬底增强。如示例所示，衬底增强板对准地附接到电池的背面。Flow-4.1电池与描述的Flow-3.1电池的不同之处在于在化学镀金属化工艺之前有金属喷墨印刷和烧结步骤。金属墨汁，诸如铝(Al)和银(Ag)纳米粒子墨汁，可选择性地沉积在基极和发射极触点区域的顶部。墨汁按照发射极和基极的电极和汇流条的形状沉积。喷墨印刷后，印刷的铝墨汁在高温下进行烧结，烧结温度在500-575摄氏度之间，此温度也可烧结银墨汁。
图18是用于制造Flow-4.1太阳能电池的制造工艺流程的框图。与Flow-3.1电池相比，不同之处在于Flow-4.1电池框图中化学镀之前增加的步骤。增加的步骤是在汇流条和叉指状电极上喷墨印刷AL/Ag或Ni纳米粒子墨汁，加上可选的热退火/烧结。其余的工艺顺序和步骤与所描述的Flow-3.1电池的工艺顺序和步骤相同。
图19是块状硅晶片制成的背触点太阳能电池的剖面示意图。该太阳能电池被称为Flow-4.2电池。该背触点太阳能电池具有外延选择性发射极(ESE)(前面已描述了形成选择性发射极的步骤)、用于钝化和抗反射涂层(ARC)的正面和背面PECVD氮化硅和热氧化物薄层、可选的背面PECVD铝氧化物、激光烧蚀的触点开口、喷涂的掺杂物、喷墨沉积的金属墨汁、化学镀的金属化、和衬底增强。如示例所示，衬底增强板对准地附接到电池的背面。Flow-4.2电池和Flow-4.1电池的区别在于Flow-4.2电池使用两个分离的PECVD氮化硅(或背面铝氧化物)沉积替换了Flow-4.1电池中的单级双面LPCVD氮化硅沉积。
图20是用于制造Flow-4.2太阳能电池的制造工艺流程的框图。正如描述的那样，与Flow-4.1电池相比，不同之处在于Flow-4.2电池框图中第四个步骤，其中PECVD氮化硅沉积在正面，而铝氧化物或PECVD氮化硅沉积在背面。其余的工艺顺序和步骤与所描述的Flow-4.1电池的工艺顺序和步骤相同。
以上描述的电池工艺变化都有普通的外延发射极层。可替代地，发射极层可通过掺杂物扩散形成，如使用含硼前体（precursors）进行火炉退火或在晶片表面沉积硼硅酸盐玻璃(BSG)后退火。以上针对外延发射极讨论的八个流程及其变化在此处同样适用。不同之处在于外延发射极步骤被在含硼气体中进行火炉退火或BSG沉积和退火步骤取代。这种替代在图21-23中只展示了一个工艺(双面LPCVD氮化硅,具有喷墨掺杂物，没有金属喷墨)。
然而，它同样适用于其它七个实施例。外延发射极沉积步骤被三个步骤取代，这三个步骤分别为BSG在发射极面沉积、火炉退火以在背面形成p+选择性发射极以及BSG剥离和清洗。
图21是块状硅晶片制成的背触点太阳能电池的截面示意图。该太阳能电池被称为Flow-5.1电池。该背触点太阳能电池具有掺杂物扩散形成的发射极层、分别用于钝化和抗反射涂层(ARC)的双面热氧化物和LPCVD氮化硅薄层、激光烧蚀的触点开口、喷墨印刷的掺杂物、化学镀金属化、和衬底增强。
图22是用于制造Flow-5.1太阳能电池的制造工艺流程的框图。图23(a-k)为关键制造工艺步骤之后，Flow-5.1太阳能电池的截面示意图。第一步表面结构化与描述的Flow-1.1电池的表面结构化相同。如图23(b)所示，在衬底背面沉积一层很薄的BSG，优选采用常压化学气相淀积(APCVD)工艺。接下来，进行火炉退火工艺以在背面形成扩散的p+发射极层，如图23(c)所示。图23(d)示出除去剩余的BSG层，然后清洁晶片。可用稀释的HF溶液蚀刻除去剩余的BSG层，并且可通过标准SC1和SC2蚀刻清洁衬底。如图23(e)-图23(k)所示，其余的工艺步骤与描述的Flow-1.1电池的相应的工艺步骤相同。
在操作中，本发明提供了用于制造新颖高效背结/背触点太阳能电池的结构和方法，优选地应用于薄晶体半导体晶片(优选地为单晶硅)。更具体地，太阳能电池晶片可通过以下技术制造，包括使用诸如质子注入和应力诱发劈裂/切片等技术从厚的晶片或锭块上削切和劈开薄晶体衬底。通常，由于与处理非常薄的太阳能电池晶片的所有方面有关，该制造方法的特定概念可延伸至其它类型的材料和基于晶片的方法。详细的太阳能电池的关键属性包括每瓦特降低的制造成本和相对较高的转换效率，以及因此提高的性能。具体地，这是源于独特的设计，这种独特的设计使得能够制造背结/背触点太阳能电池，在非常薄的单/多晶体半导体晶片上产生非常高的性能，产生的制造费用却很低。尽管公开的实施例描述为利用单晶硅晶片，但这些实施例也适用于其他元素半导体和复合半导体材料，如GaAs(砷化镓)，以及使用硅或其它半导体材料的异质结和多结太阳能电池。
进一步地，本发明提供了使用平面硅衬底制造背结/背触点太阳能电池的设计和方法。其它公开的方面包括使用亚纳秒脉冲激光处理(从飞秒到数百皮秒)来支持背结背触点太阳能电池的制造。
在一个实施例中，背触点太阳能电池具有外延选择性发射极(ESE)、用于钝化和抗反射涂层(ARC)的双面热氧化物和LPCVD氮化硅薄层、激光烧蚀的触点开口、喷墨印刷的掺杂物、化学镀的金属化，和衬底增强。如示例所示，衬底增强板以对准地方式附接到电池的背面。背面增强板可以是带有通孔的连续板，通孔用于访问太阳能电池背面的发射极和基极金属触点。可替代地，背面加强板可以有更多或更大的类似于栅格形状结构开口，以便更轻且更容易在在太阳能电池模块层进入衬底背面。
在另一种实施例中，双面LPCVD氮化硅钝化层被两个分离的正面和背面PECVD氮化硅沉积所代替。在另一种实施例中，背面PECVD氮化硅层被薄铝氧化层代替。
在另一种实施例中，对金属纳米粒子墨汁进行喷墨印刷，其烧结工艺在金属化学镀工艺之前进行。此外也公开了喷雾印刷的Al墨汁。
在一个实施例中，使用的喷墨掺杂物墨汁包括带有P-型和n-型掺杂物的硅纳米粒子。在另一种实施例中，喷墨液体掺杂物印刷工艺被掺杂物液体喷雾涂覆工艺代替。
在另一种实施例中，背面外延发射极层的形成被通过掺杂物扩散工艺形成发射极层代替。它包括，但不局限于，常压化学气相淀积(APCVD)工艺。
提供上述优选实施例的描述是为了使本领域的任何技术人员制造或使用该发明。针对这些实施例的各种修改对本领域中的技术人员来说是显而易见的，且此处确定的基本原则不需要创造性劳动便可应用于其它实施例。因此，所要求的主题不是要限于此处展示的实施例，而是要符合与此处公开的原理和新颖特征相一致的最广的范围。

Claims (21)

1.一种背结背触点薄太阳能电池，包括：
厚度在50-250微米范围内的半导体晶片，包括：
掺杂的基极区域，
光俘获正面表面，和
具有与所述掺杂的基极区域相反的掺杂极性的掺杂的背面发射极区域；
在所述正面表面上的正面介电层和在所述背面发射极区域上的背面介电层；
在所述正面介电层上的正面钝化层；
在所述背面介电层上的背面钝化层；其中所述背面钝化介电层和所述背面介电层形成反射镜；和
通过在所述背面钝化层和所述背面介电层激光烧蚀的触点开口连接至发射极区域和基极区域的背面发射极触点和背面基极触点，所述背面发射极触点和背面基极触点连接至金属互连件，金属互连件在所述背结背触点薄太阳能电池的背面形成叉指状电极和汇流条的金属化图案。
2.如权利要求1所述的背结背触点薄太阳能电池，其中所述掺杂的背面发射极区域是外延的发射极区域。
3.如权利要求1所述的背结背触点薄太阳能电池，其中所述掺杂的背面发射极区域是外延的原位掺杂的发射极区域。
4.如权利要求1所述的背结背触点薄太阳能电池，其中所述正面介电层和所述背面介电层为热氧化层。
5.如权利要求1所述的背结背触点薄太阳能电池，还包括永久的背面栅格状支撑增强。
6.如权利要求1所述的背结背触点薄太阳能电池，其中所述叉指状电极和汇流条的金属化图案是分布式的汇流条阵列。
7.如权利要求1所述的背结背触点薄太阳能电池，其中所述钝化层包括薄氮化硅层。
8.如权利要求1所述的背结背触点薄太阳能电池，其中所述钝化层包括薄铝氧化层。
9.一种用掺杂的晶体半导体晶片制造所述背结背触点薄太阳能电池的方法，所述晶片包括正面和背面，所述方法包括：
对所述晶片正面进行结构化处理；
在所述晶片背面沉积外延发射极区域；
在所述晶片正面和所述晶片背面上沉积表面钝化层；
通过用脉冲皮秒激光烧蚀所述晶片背面表面钝化层在所述晶片背面的表面钝化层中形成叉指状的发射极和基极触点开口；
对所述发射极和基极触点开口的叉指状图案进行掺杂以形成发射极区域和基极区域；和
对所述电池背面进行金属化以在叉指状电极和汇流条的图案内形成背面基极和发射极触点。
10.如权利要求9所述的方法，其中所述外延发射极区域是厚度在0.5-5微米范围内的原位掺杂。
11.如权利要求9所述的方法，其中所述表面钝化层包括热生长的氧化层和氮化硅层。
12.如权利要求9所述的方法，其中所述表面钝化层包括热生长的氧化层和LPCVD氮化硅层。
13.如权利要求9所述的方法，其中所述表面钝化层包括热生长的氧化层和PECVD氮化硅层。
14.如权利要求9所述的方法，其中所述表面钝化层包括热生长的氧化层和铝氧化层。
15.如权利要求9所述的方法，其中对所述发射极和基极触点开口的叉指状图案进行掺杂以形成发射极区域和基极区域的步骤采用喷墨印刷机将硅纳米粒子墨汁印刷到所述发射极和基极触点开口的所述叉指状图案上。
16.如所述权利要求9所述的方法，还包括使用喷墨印刷机将无掺杂的硅纳米粒子墨汁印刷所述晶片正面和背面并且烧结所述墨汁以对所述晶片正面和背面进行结构化处理的步骤。
17.如权利要求9所述的方法，其中所述金属化触点包括镍和银的层。
18.如权利要求9所述的方法，其中所述金属化触点包括由铝墨汁形成的层。
19.一种背结背薄太阳能电池，包括：
一种厚度在50-250微米范围内的半导体晶片，包括：
掺杂的基极区域，
光俘获正面表面，和
具有与所述掺杂的基极区域相反的掺杂极性的掺杂的背面发射极区域；
在所述正面表面上的正面第一介电层和在所述背面发射极区域上的背面第一介电层；
在所述正面第一介电层上的正面第二介电层，其组合充当正面钝化层；
在所述第一背面介电层上的背面第二介电层，其组合充当背面钝化层；
其中所述背面第一和第二介电层形成介质镜；
通过在所述背面第一和第二介电层中的触点开口连接至发射极区域和基极区域的背面发射极触点和背面基极触点，所述背面发射极触点和所述背面基极触点连接至金属互连件，所述金属互连件在所述背结背触点薄太阳能电池的背面形成叉指状电极和汇流条的金属化图案；和
放置在所述背结背触点薄太阳能电池的正面或背面上的至少一个永久支撑增强。
20.如权利要求19所述的背结背触点薄太阳能电池，其中所述触点开口通过脉冲激光烧蚀形成。
21.如权利要求19所述的背结背触点薄太阳能电池，其中所述触点开口通过亚纳秒脉冲周期脉冲激光烧蚀形成。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105122463A (zh) * 2013-02-12 2015-12-02 索莱克赛尔公司 使用体晶片的单片岛型背接触背结太阳能电池
CN109461782A (zh) * 2018-12-25 2019-03-12 浙江晶科能源有限公司 P型背接触型太阳能电池及其制作方法
CN111477718A (zh) * 2019-10-22 2020-07-31 国家电投集团西安太阳能电力有限公司 一种简易ibc电池电极制作的工艺
CN114597280A (zh) * 2022-05-05 2022-06-07 晶科能源(海宁)有限公司 太阳能电池、光伏组件

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors
US9455362B2 (en) 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
DE102010024309A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer photovoltaischen Solarzelle
KR20140015247A (ko) 2010-08-05 2014-02-06 솔렉셀, 인크. 태양전지용 백플레인 보강 및 상호연결부
KR102015591B1 (ko) 2011-03-28 2019-08-28 솔렉셀, 인크. 박형 실리콘 태양 전지용 활성 후면판
JP5842173B2 (ja) * 2011-03-28 2016-01-13 パナソニックＩｐマネジメント株式会社 光電変換装置及び光電変換装置の製造方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
US9842949B2 (en) * 2011-08-09 2017-12-12 Ob Realty, Llc High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
US20130168792A1 (en) * 2011-09-16 2013-07-04 Sionyx, Inc. Three Dimensional Architecture Semiconductor Devices and Associated Methods
CN103030106B (zh) 2011-10-06 2015-04-01 清华大学 三维纳米结构阵列
DE102011084644A1 (de) * 2011-10-17 2013-04-18 Osram Gmbh Verfahren zur herstellung eines photovoltaischen elements mit einer siliziumdioxidschicht
CN103094374B (zh) * 2011-10-27 2016-03-09 清华大学 太阳能电池
CN103890978A (zh) * 2011-10-28 2014-06-25 应用材料公司 用于太阳能电池制造的背接点通孔形成工艺
JP6068491B2 (ja) 2011-11-08 2017-01-25 インテヴァック インコーポレイテッド 基板処理システムおよび基板処理方法
US20130147003A1 (en) * 2011-12-13 2013-06-13 Young-Su Kim Photovoltaic device
US8822262B2 (en) * 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
AU2012362505B2 (en) * 2011-12-26 2015-08-20 Solexel, Inc. Systems and methods for enhanced light trapping in solar cells
US9293635B2 (en) * 2012-03-19 2016-03-22 Rec Solar Pte. Ltd. Back junction back contact solar cell module and method of manufacturing the same
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US20130247967A1 (en) * 2012-03-23 2013-09-26 Scott Harrington Gaseous ozone (o3) treatment for solar cell fabrication
US9054255B2 (en) 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
FR2988908B1 (fr) * 2012-04-03 2015-03-27 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere
US8486747B1 (en) * 2012-04-17 2013-07-16 Boris Gilman Backside silicon photovoltaic cell and method of manufacturing thereof
GB2502293A (en) * 2012-05-22 2013-11-27 Renewable Energy Corp Asa A method for manufacturing a back contacted back junction solar cell module
MY184055A (en) * 2012-05-29 2021-03-17 Solexel Inc Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells
NL2009754C2 (en) * 2012-11-05 2014-05-08 M4Si B V Protective cover for a copper containing conductor.
US9515217B2 (en) 2012-11-05 2016-12-06 Solexel, Inc. Monolithically isled back contact back junction solar cells
US9379258B2 (en) 2012-11-05 2016-06-28 Solexel, Inc. Fabrication methods for monolithically isled back contact back junction solar cells
KR101971202B1 (ko) * 2012-11-22 2019-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
US9088020B1 (en) * 2012-12-07 2015-07-21 Integrated Photovoltaics, Inc. Structures with sacrificial template
US20140166087A1 (en) * 2012-12-18 2014-06-19 Intevac, Inc. Solar cells having graded doped regions and methods of making solar cells having graded doped regions
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
WO2014097741A1 (ja) * 2012-12-20 2014-06-26 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
US9263601B2 (en) * 2012-12-21 2016-02-16 Sunpower Corporation Enhanced adhesion of seed layer for solar cell conductive contact
KR102044466B1 (ko) * 2013-01-16 2019-11-13 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN103151395A (zh) * 2013-01-25 2013-06-12 友达光电股份有限公司 太阳能电池
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014137283A1 (en) * 2013-03-05 2014-09-12 Trina Solar Energy Development Pte Ltd Method of fabricating a solar cell
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
KR101997922B1 (ko) * 2013-04-18 2019-07-08 엘지전자 주식회사 태양전지 및 이의 제조 방법
US9545549B2 (en) 2013-05-15 2017-01-17 Cobra Golf Incorporated Golf bag with a docking station for an electronic device
US11121271B2 (en) * 2013-05-22 2021-09-14 W&WSens, Devices, Inc. Microstructure enhanced absorption photosensitive devices
SG11201509558VA (en) * 2013-06-07 2015-12-30 Shinetsu Chemical Co Back-contact-type solar cell
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US20150040979A1 (en) * 2013-08-12 2015-02-12 Crystal Solar Incorporated Silicon Wafers with p-n Junctions by Epitaxial Deposition and Devices Fabricated Therefrom
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
KR20160113093A (ko) * 2013-09-16 2016-09-28 솔렉셀, 인크. 태양 전지의 베이스 영역 및 이미터 영역용의 레이저 가공
DE102013219342A1 (de) * 2013-09-26 2015-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Strukturierung von Schichten oxidierbarer Materialien mittels Oxidation sowie Substrat mit strukturierter Beschichtung
MY164423A (en) 2013-12-09 2017-12-15 Mimos Berhad Process of texturing silicon surface for optimal sunlight capture in solar cells
US9218958B2 (en) 2013-12-10 2015-12-22 Infineon Technologies Ag Method for forming a semiconductor device
US9570576B2 (en) * 2013-12-10 2017-02-14 Infineon Technologies Ag Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
US9653638B2 (en) * 2013-12-20 2017-05-16 Sunpower Corporation Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region
US20150221792A1 (en) * 2013-12-23 2015-08-06 Solexel, Inc. Self Aligned Contacts for Solar Cells
EP3111482A4 (en) * 2014-02-26 2017-10-25 Solexel, Inc. Self aligned contacts for back contact solar cells
JP5885891B2 (ja) * 2014-03-05 2016-03-16 三菱電機株式会社 太陽電池の製造方法および太陽電池
JP2015185743A (ja) * 2014-03-25 2015-10-22 シャープ株式会社 光電変換素子
US9627558B2 (en) 2014-04-09 2017-04-18 Arizona Board Of Regents On Behalf Of Arizona State University Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells
US9355985B2 (en) * 2014-05-30 2016-05-31 Freescale Semiconductor, Inc. Microelectronic packages having sidewall-deposited heat spreader structures and methods for the fabrication thereof
CN104009128A (zh) * 2014-06-12 2014-08-27 电子科技大学 用于太阳能电池的非晶硅薄膜陷光结构制备方法
KR101622091B1 (ko) * 2014-08-20 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9837259B2 (en) 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
WO2016033614A1 (en) * 2014-08-31 2016-03-03 Solexel, Inc. Laser doping for making back contact back junction solar cells
WO2016047564A1 (ja) * 2014-09-22 2016-03-31 京セラ株式会社 太陽電池素子
US9559236B2 (en) * 2014-09-24 2017-01-31 Sunpower Corporation Solar cell fabricated by simplified deposition process
CN105742375B (zh) * 2014-12-10 2017-09-22 北京创昱科技有限公司 一种背接触晶硅电池及其制备方法
US9997652B2 (en) 2015-03-23 2018-06-12 Sunpower Corporation Deposition approaches for emitter layers of solar cells
CN107735866B (zh) * 2015-05-29 2021-05-14 松下知识产权经营株式会社 太阳能电池
US9583649B2 (en) 2015-06-22 2017-02-28 International Business Machines Corporation Thin film solar cell backside contact manufacturing process
KR101661859B1 (ko) 2015-09-09 2016-09-30 엘지전자 주식회사 태양 전지 모듈 및 그 제조 방법
KR101910642B1 (ko) * 2016-01-28 2018-12-28 엘지전자 주식회사 태양 전지 및 그 제조 방법
JP6719548B2 (ja) * 2016-03-23 2020-07-08 シャープ株式会社 光電変換装置、光電変換モジュールおよび太陽光発電システム
US10075194B2 (en) * 2016-05-13 2018-09-11 Qualcomm Incorporated Tail biting convolutional code (TBCC) enhancement with state propagation and list decoding
TWI626758B (zh) * 2016-09-22 2018-06-11 長生太陽能股份有限公司 太陽能電池及其製造方法
US10629758B2 (en) 2016-09-30 2020-04-21 Sunpower Corporation Solar cells with differentiated P-type and N-type region architectures
US9960302B1 (en) 2016-10-18 2018-05-01 Tesla, Inc. Cascaded photovoltaic structures with interdigitated back contacts
US10937915B2 (en) 2016-10-28 2021-03-02 Tesla, Inc. Obscuring, color matching, and camouflaging solar panels
PT3321973T (pt) * 2016-11-09 2021-03-16 Meyer Burger Germany Ag Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar
US10381973B2 (en) 2017-05-17 2019-08-13 Tesla, Inc. Uniformly and directionally colored photovoltaic modules
US10985688B2 (en) 2017-06-05 2021-04-20 Tesla, Inc. Sidelap interconnect for photovoltaic roofing modules
US10734938B2 (en) 2017-07-21 2020-08-04 Tesla, Inc. Packaging for solar roof tiles
US10857764B2 (en) 2017-07-25 2020-12-08 Tesla, Inc. Method for improving adhesion between glass cover and encapsulant for solar roof tiles
US10978990B2 (en) 2017-09-28 2021-04-13 Tesla, Inc. Glass cover with optical-filtering coating for managing color of a solar roof tile
WO2019069643A1 (ja) * 2017-10-04 2019-04-11 株式会社カネカ 太陽電池の製造方法、太陽電池および太陽電池モジュール
US10454409B2 (en) 2018-02-02 2019-10-22 Tesla, Inc. Non-flat solar roof tiles
US10862420B2 (en) 2018-02-20 2020-12-08 Tesla, Inc. Inter-tile support for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CN117040435A (zh) 2018-03-01 2023-11-10 特斯拉公司 用于封装光伏屋顶瓦片的系统和方法
CN108549921A (zh) * 2018-03-28 2018-09-18 深圳市傲科微创有限公司 一种无源光标签及光识别标签系统
US11431279B2 (en) 2018-07-02 2022-08-30 Tesla, Inc. Solar roof tile with a uniform appearance
US11245354B2 (en) 2018-07-31 2022-02-08 Tesla, Inc. Solar roof tile spacer with embedded circuitry
US11082005B2 (en) 2018-07-31 2021-08-03 Tesla, Inc. External electrical contact for solar roof tiles
US11245355B2 (en) 2018-09-04 2022-02-08 Tesla, Inc. Solar roof tile module
US11581843B2 (en) 2018-09-14 2023-02-14 Tesla, Inc. Solar roof tile free of back encapsulant layer
CN111192934B (zh) * 2018-11-14 2021-09-21 苏州纳捷森光电技术有限公司 用于硅基底的氧化硅刻蚀模板的制备方法、硅基底及应用
US11431280B2 (en) 2019-08-06 2022-08-30 Tesla, Inc. System and method for improving color appearance of solar roofs
US11195920B2 (en) * 2019-10-09 2021-12-07 Newport Fab, Llc Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices
US11145572B2 (en) 2019-10-09 2021-10-12 Newport Fab, Llc Semiconductor structure having through-substrate via (TSV) in porous semiconductor region
US11164740B2 (en) 2019-10-09 2021-11-02 Newport Fab, Llc Semiconductor structure having porous semiconductor layer for RF devices
CN112466967B (zh) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 一种选择性发射极太阳能电池及其制备方法
DE102021118693A1 (de) 2021-07-20 2023-01-26 Helmholtz-Zentrum Dresden - Rossendorf E. V. Ladungsträger-Trennvorrichtung und Verfahren zum Erzeugen einer elektrischen Spannung und/oder eines elektrischen Stroms
CN115312633B (zh) * 2022-10-11 2023-02-17 金阳(泉州)新能源科技有限公司 一种无掩膜层联合钝化背接触电池及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010037823A1 (en) * 1999-12-21 2001-11-08 Erik Middelman Process for manufacturing a thin film solar cell sheet with solar cells connected in series
US20040200520A1 (en) * 2003-04-10 2004-10-14 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
CN1815760A (zh) * 2005-12-15 2006-08-09 江菲菲 基于丝网印刷工艺的背面点接触硅太阳电池及其制造方法
CN101447532A (zh) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 一种双面钝化晶体硅太阳电池的制备方法
WO2009107920A1 (en) * 2008-02-25 2009-09-03 Lg Electronics Inc. Back contact solar cell and fabrication method thereof

Family Cites Families (203)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4082570A (en) 1976-02-09 1978-04-04 Semicon, Inc. High intensity solar energy converter
US4070206A (en) 1976-05-20 1978-01-24 Rca Corporation Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency
US4043894A (en) 1976-05-20 1977-08-23 Burroughs Corporation Electrochemical anodization fixture for semiconductor wafers
US4165252A (en) 1976-08-30 1979-08-21 Burroughs Corporation Method for chemically treating a single side of a workpiece
US4348254A (en) 1978-12-27 1982-09-07 Solarex Corporation Method of making solar cell
US4251679A (en) 1979-03-16 1981-02-17 E-Cel Corporation Electromagnetic radiation transducer
US4249959A (en) 1979-11-28 1981-02-10 Rca Corporation Solar cell construction
US4361950A (en) 1980-03-24 1982-12-07 Exxon Research & Engineering Co. Method of making solar cell with wrap-around electrode
US4394529A (en) 1981-08-05 1983-07-19 Rca Corporation Solar cell array with lightweight support structure
US4427839A (en) 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
US4479847A (en) 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
US4409423A (en) 1982-03-09 1983-10-11 The United States Of America As Represented By The Secretary Of The Air Force Hole matrix vertical junction solar cell
US4430519A (en) 1982-05-28 1984-02-07 Amp Incorporated Electron beam welded photovoltaic cell interconnections
US4461922A (en) 1983-02-14 1984-07-24 Atlantic Richfield Company Solar cell module
US4626613A (en) 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
US4672023A (en) 1985-10-21 1987-06-09 Avantek, Inc. Method for planarizing wafers
US5024953A (en) * 1988-03-22 1991-06-18 Hitachi, Ltd. Method for producing opto-electric transducing element
US4922277A (en) 1988-11-28 1990-05-01 The United States Of America As Represented By The Secretary Of The Air Force Silicon wafer photoresist developer
US5208068A (en) 1989-04-17 1993-05-04 International Business Machines Corporation Lamination method for coating the sidewall or filling a cavity in a substrate
EP0421133B1 (en) * 1989-09-06 1995-12-20 Sanyo Electric Co., Ltd. Manufacturing method of a flexible photovoltaic device
GB8927709D0 (en) 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US5073230A (en) 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5420067A (en) 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5248621A (en) 1990-10-23 1993-09-28 Canon Kabushiki Kaisha Method for producing solar cell devices of crystalline material
US5112453A (en) 1990-10-31 1992-05-12 Behr Omri M Method and apparatus for producing etched plates for graphic printing
JP2912496B2 (ja) 1991-09-30 1999-06-28 シャープ株式会社 太陽電池モジュール
JPH0690014A (ja) 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US5458755A (en) 1992-11-09 1995-10-17 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
US5316593A (en) 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
JPH088370B2 (ja) * 1993-03-05 1996-01-29 株式会社日立製作所 太陽電池用光閉じ込め構造体
DE4310206C2 (de) 1993-03-29 1995-03-09 Siemens Ag Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe
WO1995005008A2 (de) 1993-07-29 1995-02-16 Gerhard Willeke Flaches bauelement mit einem gitternetz von durchgangslöchern
US5660680A (en) 1994-03-07 1997-08-26 The Regents Of The University Of California Method for fabrication of high vertical aspect ratio thin film structures
US5645684A (en) 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
US5538564A (en) 1994-03-18 1996-07-23 Regents Of The University Of California Three dimensional amorphous silicon/microcrystalline silicon solar cells
JPH07302923A (ja) 1994-04-28 1995-11-14 Canon Inc 光起電力素子
US5899360A (en) 1995-06-09 1999-05-04 Colgate - Palmolive Company Multi-chamber refillable dispenser
US5882988A (en) 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing
EP0853822A4 (en) 1995-10-05 1999-08-18 Ebara Solar Inc SOLAR CELL WITH SELF-LOCALLY DIFFUSED SELF-ALIGNED TRANSMITTER
US5616185A (en) 1995-10-10 1997-04-01 Hughes Aircraft Company Solar cell with integrated bypass diode and method
US5681392A (en) 1995-12-21 1997-10-28 Xerox Corporation Fluid reservoir containing panels for reducing rate of fluid flow
US5935653A (en) 1996-01-18 1999-08-10 Micron Technology, Inc. Methods for coating a substrate
US6399143B1 (en) 1996-04-09 2002-06-04 Delsys Pharmaceutical Corporation Method for clamping and electrostatically coating a substrate
US6058945A (en) 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
US6091021A (en) 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
AUPO347196A0 (en) 1996-11-06 1996-12-05 Pacific Solar Pty Limited Improved method of forming polycrystalline-silicon films on glass
US6054363A (en) 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
US6756289B1 (en) 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US20030039843A1 (en) 1997-03-14 2003-02-27 Christopher Johnson Photoactive coating, coated article, and method of making same
US7176111B2 (en) 1997-03-28 2007-02-13 Interuniversitair Microelektronica Centrum (Imec) Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
DE19715788C1 (de) 1997-04-16 1998-10-08 Eurocopter Deutschland Solargenerator für Satelliten
JP3740251B2 (ja) 1997-06-09 2006-02-01 キヤノン株式会社 太陽電池モジュールの製造方法
JP3889856B2 (ja) 1997-06-30 2007-03-07 松下電器産業株式会社 突起電極付きプリント配線基板の製造方法
US6645833B2 (en) * 1997-06-30 2003-11-11 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
US6114046A (en) 1997-07-24 2000-09-05 Evergreen Solar, Inc. Encapsulant material for solar cell module and laminated glass applications
JP3501642B2 (ja) 1997-12-26 2004-03-02 キヤノン株式会社 基板処理方法
WO1999048136A2 (de) 1998-03-13 1999-09-23 Steffen Keller Solarzellenanordnung
DE19811878C2 (de) 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6331208B1 (en) 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
AUPP437598A0 (en) 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP2000022185A (ja) 1998-07-03 2000-01-21 Sharp Corp 太陽電池セル及びその製造方法
US6096229A (en) 1998-07-30 2000-08-01 Lucent Technologies Inc. Method of making alignment grooves in an optical connector support member
CA2246087A1 (en) 1998-08-28 2000-02-28 Northern Telecom Limited Method of cleaving a semiconductor wafer
TW469643B (en) 1998-09-04 2001-12-21 Canon Kk Process for producing semiconductor substrate
US6555443B1 (en) 1998-11-11 2003-04-29 Robert Bosch Gmbh Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
US6461932B1 (en) 1998-12-14 2002-10-08 National Semiconductor Corporation Semiconductor trench isolation process that utilizes smoothening layer
JP2000277478A (ja) 1999-03-25 2000-10-06 Canon Inc 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法
US6881644B2 (en) 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
JP3619053B2 (ja) 1999-05-21 2005-02-09 キヤノン株式会社 光電変換装置の製造方法
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
JP2001007362A (ja) 1999-06-17 2001-01-12 Canon Inc 半導体基材および太陽電池の製造方法
KR100708491B1 (ko) 1999-08-26 2007-04-16 브레우어 사이언스 인코포레이션 듀얼 다마신 공정을 위한 개선된 충전 조성물을 포함하는 기판구조체, 충전조성물의 도포방법, 충전조성물의 적합성 결정방법, 및 전구체 구조체
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
US6274402B1 (en) 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
JP3300812B2 (ja) * 2000-01-19 2002-07-08 独立行政法人産業技術総合研究所 光電変換素子
US6602767B2 (en) 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
US6964732B2 (en) 2000-03-09 2005-11-15 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for continuous formation and lift-off of porous silicon layers
AU781761B2 (en) 2000-03-09 2005-06-09 Interuniversitair Micro-Elektronica Centrum (Imec) Method for the formation and lift-off of porous silicon layers
US6294725B1 (en) 2000-03-31 2001-09-25 Trw Inc. Wireless solar cell array electrical interconnection scheme
JP2001284622A (ja) 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
DE10021440A1 (de) 2000-05-03 2001-11-15 Univ Konstanz Verfahren zur Herstellung einer Solarzelle und nach diesem Verfahren hergestellte Solarzelle
US6518172B1 (en) 2000-08-29 2003-02-11 Micron Technology, Inc. Method for applying uniform pressurized film across wafer
US6551908B2 (en) 2000-10-02 2003-04-22 Canon Kabushiki Kaisha Method for producing semiconductor thin films on moving substrates
JP2002124692A (ja) * 2000-10-13 2002-04-26 Hitachi Ltd 太陽電池およびその製造方法
US7632434B2 (en) 2000-11-17 2009-12-15 Wayne O. Duescher Abrasive agglomerate coated raised island articles
NL1016779C2 (nl) 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs.
US6602760B2 (en) 2000-12-21 2003-08-05 Interuniversitair Microelektronica Centrum (Imec) Method of producing a semiconductor layer on a substrate
US6969472B2 (en) 2001-04-19 2005-11-29 Lsi Logic Corporation Method of fabricating sub-micron hemispherical and hemicylidrical structures from non-spherically shaped templates
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
JP2002353423A (ja) 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2003052185A (ja) 2001-05-30 2003-02-21 Canon Inc 電力変換器およびそれを用いる光起電力素子モジュール並びに発電装置
US6903512B2 (en) * 2001-08-07 2005-06-07 Konica Corporation Half mirror film producing method and optical element comprising a half mirror film
DE10140589A1 (de) 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets
US7431903B2 (en) 2001-10-30 2008-10-07 Catalysts & Chemicals Industries Co., Ltd. Tubular titanium oxide particles and process for preparing same
US6995032B2 (en) 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
JP2004055803A (ja) 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
EP1385199A1 (en) 2002-07-24 2004-01-28 IMEC vzw, Interuniversitair Microelectronica Centrum vzw Method for making thin film devices intended for solar cells or SOI application
EP1529317A2 (en) 2002-08-06 2005-05-11 Avecia Limited Organic electronic devices
US6908846B2 (en) 2002-10-24 2005-06-21 Lam Research Corporation Method and apparatus for detecting endpoint during plasma etching of thin films
EP1555696B1 (en) 2002-10-25 2010-12-15 Nakajima Glass Co., Inc. Solar battery module manufacturing method
GB0227902D0 (en) 2002-11-29 2003-01-08 Ingenia Holdings Ltd Template
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
NL1022155C2 (nl) 2002-12-12 2004-06-22 Otb Group Bv Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat.
US7312440B2 (en) 2003-01-14 2007-12-25 Georgia Tech Research Corporation Integrated micro fuel processor and flow delivery infrastructure
US7402448B2 (en) 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
US6911379B2 (en) 2003-03-05 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming strained silicon on insulator substrate
US20040175893A1 (en) 2003-03-07 2004-09-09 Applied Materials, Inc. Apparatuses and methods for forming a substantially facet-free epitaxial film
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
JP4761706B2 (ja) 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
JP3982502B2 (ja) 2004-01-15 2007-09-26 セイコーエプソン株式会社 描画装置
US20070277810A1 (en) * 2004-01-23 2007-12-06 Origin Energy Solar Pty Ltd Solar Panel
EP1560272B1 (en) 2004-01-29 2016-04-27 Panasonic Intellectual Property Management Co., Ltd. Solar cell module
US7335555B2 (en) 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US7144751B2 (en) 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US20070074755A1 (en) 2005-10-03 2007-04-05 Nanosolar, Inc. Photovoltaic module with rigidizing backplane
JP2005268719A (ja) 2004-03-22 2005-09-29 Sharp Corp 薄膜太陽電池
US7244682B2 (en) 2004-05-06 2007-07-17 Micron Technology, Inc. Methods of removing metal-containing materials
US7431795B2 (en) 2004-07-29 2008-10-07 Applied Materials, Inc. Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor
WO2006015185A2 (en) 2004-07-30 2006-02-09 Aonex Technologies, Inc. GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
WO2006031798A2 (en) 2004-09-10 2006-03-23 Jx Crystals Inc. Solar photovoltaic mirror modules
JP4464240B2 (ja) 2004-10-06 2010-05-19 キヤノン株式会社 部材の処理装置及び処理方法
DE102004050269A1 (de) 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
JP4334455B2 (ja) 2004-10-22 2009-09-30 シャープ株式会社 太陽電池モジュール
US7309658B2 (en) 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US8129822B2 (en) 2006-10-09 2012-03-06 Solexel, Inc. Template for three-dimensional thin-film solar cell manufacturing and methods of use
US8420435B2 (en) * 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US20090107545A1 (en) 2006-10-09 2009-04-30 Soltaix, Inc. Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use
JP3962086B2 (ja) * 2004-12-27 2007-08-22 直江津電子工業株式会社 裏面接合型太陽電池及びその製造方法
JP4340246B2 (ja) 2005-03-07 2009-10-07 シャープ株式会社 薄膜太陽電池およびその製造方法
US7402523B2 (en) 2005-03-31 2008-07-22 Tokyo Electron Limited Etching method
US7687372B2 (en) 2005-04-08 2010-03-30 Versatilis Llc System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor
US20060266916A1 (en) 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US20070095386A1 (en) 2005-06-06 2007-05-03 Solaria Corporation Method and system for integrated solar cell using a plurality of photovoltaic regions
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7259102B2 (en) 2005-09-30 2007-08-21 Molecular Imprints, Inc. Etching technique to planarize a multi-layer structure
KR100699348B1 (ko) 2005-10-11 2007-03-23 삼성전자주식회사 포토레지스트 용액을 효율적으로 사용하는 분사식포토레지스트 코팅 장치 및 방법
WO2007099955A1 (ja) 2006-03-01 2007-09-07 Sanyo Electric Co., Ltd. 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール
US7737357B2 (en) 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US20080006319A1 (en) 2006-06-05 2008-01-10 Martin Bettge Photovoltaic and photosensing devices based on arrays of aligned nanostructures
US7786376B2 (en) 2006-08-22 2010-08-31 Solexel, Inc. High efficiency solar cells and manufacturing methods
US8716594B2 (en) * 2006-09-26 2014-05-06 Banpil Photonics, Inc. High efficiency photovoltaic cells with self concentrating effect
TWI401810B (zh) * 2006-10-04 2013-07-11 Gigastorage Corp 太陽能電池
US8293558B2 (en) 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US20100304521A1 (en) 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors
US8035028B2 (en) 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US20080230782A1 (en) * 2006-10-09 2008-09-25 Homer Antoniadis Photoconductive devices with enhanced efficiency from group iv nanoparticle materials and methods thereof
US8168465B2 (en) 2008-11-13 2012-05-01 Solexel, Inc. Three-dimensional semiconductor template for making high efficiency thin-film solar cells
US20080264477A1 (en) 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US7999174B2 (en) 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US7745313B2 (en) 2008-05-28 2010-06-29 Solexel, Inc. Substrate release methods and apparatuses
US20080128641A1 (en) 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
JP4846551B2 (ja) 2006-12-18 2011-12-28 シャープ株式会社 太陽電池およびその製造方法
WO2008136872A2 (en) 2006-12-22 2008-11-13 Adriani Paul M Structures for low cost, reliable solar modules
US20080216887A1 (en) 2006-12-22 2008-09-11 Advent Solar, Inc. Interconnect Technologies for Back Contact Solar Cells and Modules
CN101017858A (zh) * 2007-01-10 2007-08-15 北京市太阳能研究所有限公司 一种背接触式太阳能电池及其制作方法
ATE518241T1 (de) 2007-01-24 2011-08-15 Soitec Silicon On Insulator Herstellungsverfahren für wafer aus silizium auf isolator und entsprechender wafer
US20100018565A1 (en) * 2007-01-25 2010-01-28 Yasushi Funakoshi Solar cell, solar cell array and solar cell module, and method of fabricating solar cell array
EP2122691A4 (en) 2007-02-16 2011-02-16 Nanogram Corp SOLAR CELL STRUCTURES, PV MODULES AND CORRESPONDING METHODS
KR20100015622A (ko) 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
FR2914501B1 (fr) 2007-03-28 2009-12-04 Commissariat Energie Atomique Dispositif photovoltaique a structure a heterojonctions interdigitee discontinue
US8115096B2 (en) * 2007-06-18 2012-02-14 E-Cube Technologies, Ltd. Methods and apparatuses for improving power extraction from solar cells
JP5374504B2 (ja) * 2007-07-18 2013-12-25 アイメック エミッタ構造の作製方法とその結果のエミッタ構造
WO2009026240A1 (en) 2007-08-17 2009-02-26 Solexel, Inc. Methods for liquid transfer coating of three-dimensional substrates
WO2009052511A2 (en) 2007-10-18 2009-04-23 Belano Holdings, Ltd. Mono-silicon solar cells
WO2009067483A1 (en) 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
EP2224496A1 (en) 2007-11-22 2010-09-01 Sharp Kabushiki Kaisha Wiring member between elements, photoelectric conversion element, and photoelectric conversion element connecting body and photoelectric conversion module using the wiring member between elements and the photoelectric conversion element
JP2009135338A (ja) * 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 太陽電池及び太陽電池の製造方法
DE102007059486A1 (de) 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür
DE102007059490B4 (de) * 2007-12-11 2012-10-25 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit integrierter Bypassdioden-Funktion sowie Herstellungsverfahren hierfür
ES2402779T3 (es) 2007-12-14 2013-05-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Célula solar de película delgada y procedimiento para su fabricación
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
DE102008013446A1 (de) 2008-02-15 2009-08-27 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren
US8049521B2 (en) 2008-04-14 2011-11-01 Applied Materials, Inc. Solar parametric testing module and processes
JP4948473B2 (ja) * 2008-04-21 2012-06-06 三洋電機株式会社 太陽電池モジュール
US20090301559A1 (en) 2008-05-13 2009-12-10 Georgia Tech Research Corporation Solar cell having a high quality rear surface spin-on dielectric layer
US20100144080A1 (en) 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
TWI390756B (zh) 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
US20100051085A1 (en) 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cell modules
US20110220191A1 (en) * 2008-09-09 2011-09-15 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
US7999175B2 (en) 2008-09-09 2011-08-16 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells with laser ablated grooves
US20100108130A1 (en) 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US8288195B2 (en) 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
MY160251A (en) 2008-11-26 2017-02-28 Solexel Inc Truncated pyramid -structures for see-through solar cells
CN101447518A (zh) * 2008-12-31 2009-06-03 江苏艾德太阳能科技有限公司 一种背点接触异质结太阳能电池及其制造方法
EP2395544A4 (en) 2009-02-05 2013-02-20 Sharp Kk METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
MY162405A (en) 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
AU2010229103A1 (en) 2009-03-26 2011-11-03 Bp Corporation North America Inc. Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
EP2419306B1 (en) 2009-04-14 2016-03-30 Solexel, Inc. High efficiency epitaxial chemical vapor deposition (cvd) reactor
KR20120010251A (ko) 2009-04-23 2012-02-02 샤프 가부시키가이샤 배선 시트, 배선 시트가 부착된 태양 전지 셀, 및 태양 전지 모듈
US9099584B2 (en) 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
JP5872456B2 (ja) 2009-05-05 2016-03-01 ソレクセル、インコーポレイテッド 生産性が高い多孔質半導体層形成装置
US8445314B2 (en) 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
US8551866B2 (en) 2009-05-29 2013-10-08 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
US8624436B2 (en) 2009-06-09 2014-01-07 Andre Poskatcheev Willis Power harvesting circuit and method for serially coupled DC power sources
US20110083724A1 (en) * 2009-10-08 2011-04-14 Ovshinsky Stanford R Monolithic Integration of Photovoltaic Cells
JP2011198965A (ja) 2010-03-19 2011-10-06 Fuji Electric Co Ltd レーザースクライブ装置
KR20110124112A (ko) 2010-05-10 2011-11-16 경희대학교 산학협력단 레이저 리프트 오프 공정을 이용한 플렉서블 ｃｉｓ계 태양전지의 제조 방법
US20120111399A1 (en) * 2010-11-08 2012-05-10 E. I. Du Pont De Nemours And Company Solar cell electrode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010037823A1 (en) * 1999-12-21 2001-11-08 Erik Middelman Process for manufacturing a thin film solar cell sheet with solar cells connected in series
US20040200520A1 (en) * 2003-04-10 2004-10-14 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
CN1815760A (zh) * 2005-12-15 2006-08-09 江菲菲 基于丝网印刷工艺的背面点接触硅太阳电池及其制造方法
WO2009107920A1 (en) * 2008-02-25 2009-09-03 Lg Electronics Inc. Back contact solar cell and fabrication method thereof
CN101447532A (zh) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 一种双面钝化晶体硅太阳电池的制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105122463A (zh) * 2013-02-12 2015-12-02 索莱克赛尔公司 使用体晶片的单片岛型背接触背结太阳能电池
CN109461782A (zh) * 2018-12-25 2019-03-12 浙江晶科能源有限公司 P型背接触型太阳能电池及其制作方法
CN111477718A (zh) * 2019-10-22 2020-07-31 国家电投集团西安太阳能电力有限公司 一种简易ibc电池电极制作的工艺
CN114597280A (zh) * 2022-05-05 2022-06-07 晶科能源(海宁)有限公司 太阳能电池、光伏组件
CN114597280B (zh) * 2022-05-05 2022-07-12 晶科能源(海宁)有限公司 太阳能电池、光伏组件

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