JP5872456B2 - 生産性が高い多孔質半導体層形成装置 - Google Patents
生産性が高い多孔質半導体層形成装置 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/005—Apparatus specially adapted for electrolytic conversion coating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C25F3/00—Electrolytic etching or polishing
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- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
Claims (12)
- 複数枚の半導体ウェハ上に多孔質半導体層を形成する装置であって、
第1電極と第2電極を備えた、鉛直方向に配向された電解質槽であって、電流を供給するために、前記第1電極が前記電解質槽の頂部に配置され、かつ前記第2電極が前記電解質槽の底部に配置される、電解質槽と、
積層状態で配列された複数の半導体ウェハであって、各半導体ウェハの縁を囲みその場に固定するウェハ縁封止材を有し、ウェハ積層体と、
本装置に対する電解質供給用の電解質供給路と、
前記半導体ウェハ同士の間隙毎に配置され、少なくとも前記各半導体ウェハの表面に電解質を供給するため及び該表面からのガス排出に使用されるための、複数の電解質流路と、
前記各電解質流路に対応する電解質供給ポートと排出ポートであって、前記電解質供給ポートと排出ポートは前記電解質を前記複数の電解質流路を介し、かつ前記各半導体ウェハの上を流通させる、電解質供給ポートと排出ポートと、及び、
前記各電解質流路に対応し、前記電解質流路及び前記電解質供給ポート及び排出ポートを含む電解質流路から多孔質層形成副産物を除去するベントスタックと
を備える装置。 - 請求項1記載の装置であって、半導体ウェハのうち複数枚がシリコンウェハである装置。
- 請求項1記載の装置であって、半導体ウェハのうち複数枚が正方形又は略正方形の装置。
- 請求項1記載の装置であって、半導体ウェハのうち複数枚が略円形の装置。
- 請求項1記載の装置であって、第1及び第2電極を用い電流及び電圧の極性を所定期間経過後1サイクル以上に亘り交番又は変化させる装置。
- 請求項5記載の装置であって、その第1及び第2電極を用い複数通りの所定値で電流を供給することで、その多孔度が異なる複数個の層を発生させる装置。
- 請求項6記載の装置であって、その所定値として離散値を使用することで、その多孔度が不連続な複数個の層を発生させる装置。
- 請求項6記載の装置であって、その所定値として連続値を使用することで、その多孔度に傾斜の付いた層を発生させる装置。
- 請求項1記載の装置であって、そのウェハ縁封止材が形状適合性を有し、ある範囲内のウェハ直径及びウェハ厚に対応可能な装置。
- 積層状態で配置されている前記複数の半導体ウェハは積層状態で配置されている複数のウェハのアレイである、請求項1に記載の装置。
- 前記複数の半導体ウェハは鉛直に対して傾斜した角度で位置決めされている請求項1に記載の装置。
- 前記電解質流路における前記電解質を加圧するポンプを備えた、請求項1に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US17553509P | 2009-05-05 | 2009-05-05 | |
US61/175,535 | 2009-05-05 | ||
US12/774,667 | 2010-05-05 | ||
US12/774,667 US8999058B2 (en) | 2009-05-05 | 2010-05-05 | High-productivity porous semiconductor manufacturing equipment |
PCT/US2010/033792 WO2010129719A1 (en) | 2009-05-05 | 2010-05-05 | High-productivity porous semiconductor manufacturing equipment |
Publications (2)
Publication Number | Publication Date |
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JP2012526398A JP2012526398A (ja) | 2012-10-25 |
JP5872456B2 true JP5872456B2 (ja) | 2016-03-01 |
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JP2012509957A Expired - Fee Related JP5872456B2 (ja) | 2009-05-05 | 2010-05-05 | 生産性が高い多孔質半導体層形成装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8999058B2 (ja) |
EP (1) | EP2427914A4 (ja) |
JP (1) | JP5872456B2 (ja) |
CN (1) | CN102460716B (ja) |
MY (1) | MY165969A (ja) |
WO (1) | WO2010129719A1 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US20090107545A1 (en) | 2006-10-09 | 2009-04-30 | Soltaix, Inc. | Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use |
US8193076B2 (en) | 2006-10-09 | 2012-06-05 | Solexel, Inc. | Method for releasing a thin semiconductor substrate from a reusable template |
US20090236317A1 (en) * | 2008-03-21 | 2009-09-24 | Midwest Research Institute | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
US8729798B2 (en) | 2008-03-21 | 2014-05-20 | Alliance For Sustainable Energy, Llc | Anti-reflective nanoporous silicon for efficient hydrogen production |
US8815104B2 (en) | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
WO2010057060A2 (en) | 2008-11-13 | 2010-05-20 | Solexel, Inc. | Methods and systems for manufacturing thin-film solar cells |
US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
WO2010129719A1 (en) * | 2009-05-05 | 2010-11-11 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
US9034216B2 (en) | 2009-11-11 | 2015-05-19 | Alliance For Sustainable Energy, Llc | Wet-chemical systems and methods for producing black silicon substrates |
MY166305A (en) | 2009-12-09 | 2018-06-25 | Solexel Inc | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers |
CN102844883B (zh) | 2010-02-12 | 2016-01-20 | 速力斯公司 | 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板 |
US8828765B2 (en) | 2010-06-09 | 2014-09-09 | Alliance For Sustainable Energy, Llc | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces |
KR101369282B1 (ko) | 2010-06-09 | 2014-03-04 | 솔렉셀, 인크. | 고생산성 박막 증착 방법 및 시스템 |
SG186283A1 (en) | 2010-06-14 | 2013-01-30 | Trutag Technologies Inc | System for producing a packaged item with an identifier |
WO2013055307A2 (en) | 2010-08-05 | 2013-04-18 | Solexel, Inc. | Backplane reinforcement and interconnects for solar cells |
EP2684210A4 (en) | 2011-03-08 | 2014-08-20 | Alliance Sustainable Energy | EFFICIENT BLACK SILICON PHOTOVOLTAIC DEVICES HAVING A BETTER RESPONSE TO BLUE |
EP2691976A4 (en) * | 2011-03-29 | 2014-09-17 | Natcore Technology Inc | METHOD FOR CONTROLLING THE THICKNESS OF A SILICON OXIDE LAYER |
EP2710639A4 (en) | 2011-05-20 | 2015-11-25 | Solexel Inc | SELF-ACTIVATED FRONT SURFACE POLARIZATION FOR A SOLAR CELL |
KR101389030B1 (ko) | 2011-05-26 | 2014-04-29 | 솔렉셀, 인크. | 재사용을 위한 캐리어를 조정하는 방법과 장치 |
US9217206B2 (en) * | 2013-09-27 | 2015-12-22 | Sunpower Corporation | Enhanced porosification |
DE102013221522A1 (de) * | 2013-10-01 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten |
DE102013219886A1 (de) * | 2013-10-01 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten |
CN106796963A (zh) * | 2014-09-04 | 2017-05-31 | 应用材料公司 | 用于形成多孔硅层的方法和装置 |
WO2016094271A1 (en) * | 2014-12-10 | 2016-06-16 | Applied Materials, Inc. | System and method for all wrap around porous silicon formation |
US9799541B1 (en) | 2014-12-18 | 2017-10-24 | Trutag Technologies, Inc. | Multiple wafer single bath etcher |
CN111188083B (zh) * | 2020-01-23 | 2021-05-07 | 河南理工大学 | 一种电化学制备全表面发光的多孔硅的方法 |
CN112663120B (zh) * | 2020-12-05 | 2022-08-02 | 绍兴同芯成集成电路有限公司 | 用于晶圆双面电镀的电镀装置 |
Family Cites Families (116)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4082570A (en) * | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
US4070206A (en) * | 1976-05-20 | 1978-01-24 | Rca Corporation | Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency |
US4043894A (en) * | 1976-05-20 | 1977-08-23 | Burroughs Corporation | Electrochemical anodization fixture for semiconductor wafers |
US4165252A (en) * | 1976-08-30 | 1979-08-21 | Burroughs Corporation | Method for chemically treating a single side of a workpiece |
US4348254A (en) * | 1978-12-27 | 1982-09-07 | Solarex Corporation | Method of making solar cell |
US4251679A (en) * | 1979-03-16 | 1981-02-17 | E-Cel Corporation | Electromagnetic radiation transducer |
US4249959A (en) * | 1979-11-28 | 1981-02-10 | Rca Corporation | Solar cell construction |
US4361950A (en) * | 1980-03-24 | 1982-12-07 | Exxon Research & Engineering Co. | Method of making solar cell with wrap-around electrode |
US4427839A (en) * | 1981-11-09 | 1984-01-24 | General Electric Company | Faceted low absorptance solar cell |
US4479847A (en) * | 1981-12-30 | 1984-10-30 | California Institute Of Technology | Equilibrium crystal growth from substrate confined liquid |
US4409423A (en) * | 1982-03-09 | 1983-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Hole matrix vertical junction solar cell |
US4461922A (en) * | 1983-02-14 | 1984-07-24 | Atlantic Richfield Company | Solar cell module |
US4626613A (en) | 1983-12-23 | 1986-12-02 | Unisearch Limited | Laser grooved solar cell |
US4672023A (en) | 1985-10-21 | 1987-06-09 | Avantek, Inc. | Method for planarizing wafers |
US5024953A (en) | 1988-03-22 | 1991-06-18 | Hitachi, Ltd. | Method for producing opto-electric transducing element |
US4922277A (en) | 1988-11-28 | 1990-05-01 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon wafer photoresist developer |
US5208068A (en) | 1989-04-17 | 1993-05-04 | International Business Machines Corporation | Lamination method for coating the sidewall or filling a cavity in a substrate |
GB8927709D0 (en) | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
US5073230A (en) | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
US5420067A (en) | 1990-09-28 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricatring sub-half-micron trenches and holes |
US5248621A (en) | 1990-10-23 | 1993-09-28 | Canon Kabushiki Kaisha | Method for producing solar cell devices of crystalline material |
US5112453A (en) | 1990-10-31 | 1992-05-12 | Behr Omri M | Method and apparatus for producing etched plates for graphic printing |
JP3337705B2 (ja) * | 1992-01-23 | 2002-10-21 | キヤノン株式会社 | 陽極化成装置及び方法 |
JPH0690014A (ja) | 1992-07-22 | 1994-03-29 | Mitsubishi Electric Corp | 薄型太陽電池及びその製造方法,エッチング方法及び自動エッチング装置,並びに半導体装置の製造方法 |
JP3110178B2 (ja) * | 1992-11-09 | 2000-11-20 | キヤノン株式会社 | 半導体基板の作製方法及び陽極化成装置 |
DE69312636T2 (de) * | 1992-11-09 | 1998-02-05 | Canon Kk | Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat |
US5316593A (en) | 1992-11-16 | 1994-05-31 | Midwest Research Institute | Heterojunction solar cell with passivated emitter surface |
JPH088370B2 (ja) | 1993-03-05 | 1996-01-29 | 株式会社日立製作所 | 太陽電池用光閉じ込め構造体 |
DE4310206C2 (de) | 1993-03-29 | 1995-03-09 | Siemens Ag | Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe |
US5645684A (en) | 1994-03-07 | 1997-07-08 | The Regents Of The University Of California | Multilayer high vertical aspect ratio thin film structures |
US5660680A (en) | 1994-03-07 | 1997-08-26 | The Regents Of The University Of California | Method for fabrication of high vertical aspect ratio thin film structures |
US5538564A (en) | 1994-03-18 | 1996-07-23 | Regents Of The University Of California | Three dimensional amorphous silicon/microcrystalline silicon solar cells |
JP3186482B2 (ja) * | 1994-12-27 | 2001-07-11 | 日産自動車株式会社 | 半導体基板の電解エッチング方法 |
US5882988A (en) | 1995-08-16 | 1999-03-16 | Philips Electronics North America Corporation | Semiconductor chip-making without scribing |
CA2232857C (en) | 1995-10-05 | 2003-05-13 | Jalal Salami | Structure and fabrication process for self-aligned locally deep-diffused emitter (salde) solar cell |
US5681392A (en) | 1995-12-21 | 1997-10-28 | Xerox Corporation | Fluid reservoir containing panels for reducing rate of fluid flow |
US5935653A (en) | 1996-01-18 | 1999-08-10 | Micron Technology, Inc. | Methods for coating a substrate |
EP0797258B1 (en) * | 1996-03-18 | 2011-07-20 | Sony Corporation | Method for making thin film semiconductor, solar cell, and light emitting diode |
US6399143B1 (en) | 1996-04-09 | 2002-06-04 | Delsys Pharmaceutical Corporation | Method for clamping and electrostatically coating a substrate |
US6091021A (en) | 1996-11-01 | 2000-07-18 | Sandia Corporation | Silicon cells made by self-aligned selective-emitter plasma-etchback process |
AUPO347196A0 (en) | 1996-11-06 | 1996-12-05 | Pacific Solar Pty Limited | Improved method of forming polycrystalline-silicon films on glass |
JP3376258B2 (ja) * | 1996-11-28 | 2003-02-10 | キヤノン株式会社 | 陽極化成装置及びそれに関連する装置及び方法 |
US6756289B1 (en) | 1996-12-27 | 2004-06-29 | Canon Kabushiki Kaisha | Method of producing semiconductor member and method of producing solar cell |
US20030039843A1 (en) | 1997-03-14 | 2003-02-27 | Christopher Johnson | Photoactive coating, coated article, and method of making same |
US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
JP3985065B2 (ja) * | 1997-05-14 | 2007-10-03 | 忠弘 大見 | 多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置 |
JP3740251B2 (ja) | 1997-06-09 | 2006-02-01 | キヤノン株式会社 | 太陽電池モジュールの製造方法 |
EP0996967B1 (de) | 1997-06-30 | 2008-11-19 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung von schichtartigen Gebilden auf einem Halbleitersubstrat, Halbleitersubstrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente |
US6114046A (en) | 1997-07-24 | 2000-09-05 | Evergreen Solar, Inc. | Encapsulant material for solar cell module and laminated glass applications |
JP3501642B2 (ja) * | 1997-12-26 | 2004-03-02 | キヤノン株式会社 | 基板処理方法 |
US6441297B1 (en) | 1998-03-13 | 2002-08-27 | Steffen Keller | Solar cell arrangement |
US6416647B1 (en) | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
US6331208B1 (en) * | 1998-05-15 | 2001-12-18 | Canon Kabushiki Kaisha | Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor |
AUPP437598A0 (en) | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
JP2000022185A (ja) | 1998-07-03 | 2000-01-21 | Sharp Corp | 太陽電池セル及びその製造方法 |
US20020106874A1 (en) * | 1998-07-03 | 2002-08-08 | Masaaki Iwane | Crystal growth process, semiconductor device, and its production process |
US6096229A (en) | 1998-07-30 | 2000-08-01 | Lucent Technologies Inc. | Method of making alignment grooves in an optical connector support member |
US6143629A (en) * | 1998-09-04 | 2000-11-07 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
US6555443B1 (en) | 1998-11-11 | 2003-04-29 | Robert Bosch Gmbh | Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate |
US6461932B1 (en) | 1998-12-14 | 2002-10-08 | National Semiconductor Corporation | Semiconductor trench isolation process that utilizes smoothening layer |
JP2000277478A (ja) * | 1999-03-25 | 2000-10-06 | Canon Inc | 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法 |
US6881644B2 (en) | 1999-04-21 | 2005-04-19 | Silicon Genesis Corporation | Smoothing method for cleaved films made using a release layer |
JP3619053B2 (ja) | 1999-05-21 | 2005-02-09 | キヤノン株式会社 | 光電変換装置の製造方法 |
US6664169B1 (en) | 1999-06-08 | 2003-12-16 | Canon Kabushiki Kaisha | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus |
JP2001007362A (ja) | 1999-06-17 | 2001-01-12 | Canon Inc | 半導体基材および太陽電池の製造方法 |
WO2001015211A1 (en) | 1999-08-26 | 2001-03-01 | Brewer Science | Improved fill material for dual damascene processes |
US6602767B2 (en) | 2000-01-27 | 2003-08-05 | Canon Kabushiki Kaisha | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery |
AU781761B2 (en) | 2000-03-09 | 2005-06-09 | Interuniversitair Micro-Elektronica Centrum (Imec) | Method for the formation and lift-off of porous silicon layers |
US6964732B2 (en) | 2000-03-09 | 2005-11-15 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for continuous formation and lift-off of porous silicon layers |
US6294725B1 (en) | 2000-03-31 | 2001-09-25 | Trw Inc. | Wireless solar cell array electrical interconnection scheme |
JP2001284622A (ja) | 2000-03-31 | 2001-10-12 | Canon Inc | 半導体部材の製造方法及び太陽電池の製造方法 |
US6518172B1 (en) | 2000-08-29 | 2003-02-11 | Micron Technology, Inc. | Method for applying uniform pressurized film across wafer |
US6551908B2 (en) * | 2000-10-02 | 2003-04-22 | Canon Kabushiki Kaisha | Method for producing semiconductor thin films on moving substrates |
JP2002184709A (ja) * | 2000-10-02 | 2002-06-28 | Canon Inc | 半導体薄膜の製造方法及びその製造装置 |
NL1016779C2 (nl) | 2000-12-02 | 2002-06-04 | Cornelis Johannes Maria V Rijn | Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs. |
US6602760B2 (en) | 2000-12-21 | 2003-08-05 | Interuniversitair Microelektronica Centrum (Imec) | Method of producing a semiconductor layer on a substrate |
WO2002055760A1 (en) | 2001-01-09 | 2002-07-18 | Telephus, Inc. | Anodic reactor and reaction unit thereof |
US6969472B2 (en) | 2001-04-19 | 2005-11-29 | Lsi Logic Corporation | Method of fabricating sub-micron hemispherical and hemicylidrical structures from non-spherically shaped templates |
US6524880B2 (en) | 2001-04-23 | 2003-02-25 | Samsung Sdi Co., Ltd. | Solar cell and method for fabricating the same |
JP2002353423A (ja) | 2001-05-25 | 2002-12-06 | Canon Inc | 板部材の分離装置及び処理方法 |
JP2003052185A (ja) | 2001-05-30 | 2003-02-21 | Canon Inc | 電力変換器およびそれを用いる光起電力素子モジュール並びに発電装置 |
AU2002344596B2 (en) | 2001-10-30 | 2006-07-27 | Catalysts & Chemicals Industries Co., Ltd. | Tubular titanium oxide particles, method for preparing the same, and use of the same |
JP2004055803A (ja) | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
US6995032B2 (en) | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
EP1385199A1 (en) | 2002-07-24 | 2004-01-28 | IMEC vzw, Interuniversitair Microelectronica Centrum vzw | Method for making thin film devices intended for solar cells or SOI application |
KR20050032114A (ko) | 2002-08-06 | 2005-04-06 | 아베시아 리미티드 | 유기 전기 소자 |
WO2004018091A1 (de) * | 2002-08-23 | 2004-03-04 | Hartmut Presting | Mikrostrukturierter katalysatorkörper und verfahren zu dessen herstellung |
JP3875708B2 (ja) | 2002-10-25 | 2007-01-31 | 中島硝子工業株式会社 | 太陽電池モジュールの製造方法 |
GB0227902D0 (en) | 2002-11-29 | 2003-01-08 | Ingenia Holdings Ltd | Template |
NL1022155C2 (nl) | 2002-12-12 | 2004-06-22 | Otb Group Bv | Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat. |
US7402448B2 (en) | 2003-01-31 | 2008-07-22 | Bp Corporation North America Inc. | Photovoltaic cell and production thereof |
US6911379B2 (en) | 2003-03-05 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming strained silicon on insulator substrate |
JP4761706B2 (ja) | 2003-12-25 | 2011-08-31 | 京セラ株式会社 | 光電変換装置の製造方法 |
JP3982502B2 (ja) | 2004-01-15 | 2007-09-26 | セイコーエプソン株式会社 | 描画装置 |
EP1560272B1 (en) | 2004-01-29 | 2016-04-27 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell module |
US7335555B2 (en) | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
US7144751B2 (en) | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
WO2006015185A2 (en) | 2004-07-30 | 2006-02-09 | Aonex Technologies, Inc. | GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
US20060054212A1 (en) | 2004-09-10 | 2006-03-16 | Fraas Lewis M | Solar photovoltaic mirror modules |
JP4464240B2 (ja) | 2004-10-06 | 2010-05-19 | キヤノン株式会社 | 部材の処理装置及び処理方法 |
US20090107545A1 (en) | 2006-10-09 | 2009-04-30 | Soltaix, Inc. | Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use |
US8129822B2 (en) | 2006-10-09 | 2012-03-06 | Solexel, Inc. | Template for three-dimensional thin-film solar cell manufacturing and methods of use |
JP4340246B2 (ja) | 2005-03-07 | 2009-10-07 | シャープ株式会社 | 薄膜太陽電池およびその製造方法 |
US7402523B2 (en) | 2005-03-31 | 2008-07-22 | Tokyo Electron Limited | Etching method |
US20060266916A1 (en) | 2005-05-25 | 2006-11-30 | Molecular Imprints, Inc. | Imprint lithography template having a coating to reflect and/or absorb actinic energy |
US20060283495A1 (en) | 2005-06-06 | 2006-12-21 | Solaria Corporation | Method and system for integrated solar cell using a plurality of photovoltaic regions |
US7259102B2 (en) | 2005-09-30 | 2007-08-21 | Molecular Imprints, Inc. | Etching technique to planarize a multi-layer structure |
KR100699348B1 (ko) | 2005-10-11 | 2007-03-23 | 삼성전자주식회사 | 포토레지스트 용액을 효율적으로 사용하는 분사식포토레지스트 코팅 장치 및 방법 |
US7786376B2 (en) | 2006-08-22 | 2010-08-31 | Solexel, Inc. | High efficiency solar cells and manufacturing methods |
US7999174B2 (en) | 2006-10-09 | 2011-08-16 | Solexel, Inc. | Solar module structures and assembly methods for three-dimensional thin-film solar cells |
US7745313B2 (en) | 2008-05-28 | 2010-06-29 | Solexel, Inc. | Substrate release methods and apparatuses |
US8035028B2 (en) | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Pyramidal three-dimensional thin-film solar cells |
US20080264477A1 (en) | 2006-10-09 | 2008-10-30 | Soltaix, Inc. | Methods for manufacturing three-dimensional thin-film solar cells |
WO2009026240A1 (en) | 2007-08-17 | 2009-02-26 | Solexel, Inc. | Methods for liquid transfer coating of three-dimensional substrates |
EP2371006A4 (en) | 2008-11-26 | 2013-05-01 | Solexel Inc | TRUNCATED PYRAMID STRUCTURES FOR TRANSPARENT SOLAR CELLS |
WO2010129719A1 (en) * | 2009-05-05 | 2010-11-11 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
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2010
- 2010-05-05 WO PCT/US2010/033792 patent/WO2010129719A1/en active Application Filing
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JP2012526398A (ja) | 2012-10-25 |
CN102460716A (zh) | 2012-05-16 |
CN102460716B (zh) | 2015-03-25 |
EP2427914A4 (en) | 2013-06-05 |
MY165969A (en) | 2018-05-18 |
US8999058B2 (en) | 2015-04-07 |
US20150315719A1 (en) | 2015-11-05 |
US20110030610A1 (en) | 2011-02-10 |
US9869031B2 (en) | 2018-01-16 |
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WO2010129719A1 (en) | 2010-11-11 |
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