CN102460716A - 高生产率多孔半导体制造设备 - Google Patents
高生产率多孔半导体制造设备 Download PDFInfo
- Publication number
- CN102460716A CN102460716A CN2010800300237A CN201080030023A CN102460716A CN 102460716 A CN102460716 A CN 102460716A CN 2010800300237 A CN2010800300237 A CN 2010800300237A CN 201080030023 A CN201080030023 A CN 201080030023A CN 102460716 A CN102460716 A CN 102460716A
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- Prior art keywords
- semiconductor crystal
- wafer
- semiconductor
- crystal wafer
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 133
- 239000013078 crystal Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 28
- 239000003792 electrolyte Substances 0.000 claims description 27
- 238000007789 sealing Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001154 acute effect Effects 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 28
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
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- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/005—Apparatus specially adapted for electrolytic conversion coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17553509P | 2009-05-05 | 2009-05-05 | |
US61/175,535 | 2009-05-05 | ||
PCT/US2010/033792 WO2010129719A1 (en) | 2009-05-05 | 2010-05-05 | High-productivity porous semiconductor manufacturing equipment |
US12/774,667 US8999058B2 (en) | 2009-05-05 | 2010-05-05 | High-productivity porous semiconductor manufacturing equipment |
US12/774,667 | 2010-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102460716A true CN102460716A (zh) | 2012-05-16 |
CN102460716B CN102460716B (zh) | 2015-03-25 |
Family
ID=43050452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080030023.7A Expired - Fee Related CN102460716B (zh) | 2009-05-05 | 2010-05-05 | 高生产率多孔半导体制造设备 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8999058B2 (zh) |
EP (1) | EP2427914A4 (zh) |
JP (1) | JP5872456B2 (zh) |
CN (1) | CN102460716B (zh) |
MY (1) | MY165969A (zh) |
WO (1) | WO2010129719A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105518871A (zh) * | 2013-09-27 | 2016-04-20 | 太阳能公司 | 增强的多孔化 |
CN107004630A (zh) * | 2014-12-10 | 2017-08-01 | 应用材料公司 | 用于全卷绕多孔硅形成的系统和方法 |
CN111188083A (zh) * | 2020-01-23 | 2020-05-22 | 河南理工大学 | 一种电化学制备全表面发光的多孔硅的方法 |
CN112663120A (zh) * | 2020-12-05 | 2021-04-16 | 绍兴同芯成集成电路有限公司 | 用于晶圆双面电镀的电镀装置 |
Families Citing this family (27)
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US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US8035027B2 (en) | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells |
US8193076B2 (en) | 2006-10-09 | 2012-06-05 | Solexel, Inc. | Method for releasing a thin semiconductor substrate from a reusable template |
US8815104B2 (en) | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
US20090236317A1 (en) * | 2008-03-21 | 2009-09-24 | Midwest Research Institute | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
US8729798B2 (en) | 2008-03-21 | 2014-05-20 | Alliance For Sustainable Energy, Llc | Anti-reflective nanoporous silicon for efficient hydrogen production |
US20100148319A1 (en) | 2008-11-13 | 2010-06-17 | Solexel, Inc. | Substrates for High-Efficiency Thin-Film Solar Cells Based on Crystalline Templates |
US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
CN102460716B (zh) * | 2009-05-05 | 2015-03-25 | 速力斯公司 | 高生产率多孔半导体制造设备 |
CA2815754A1 (en) | 2009-11-11 | 2011-05-19 | Alliance For Sustainable Energy, Llc | Wet-chemical systems and methods for producing black silicon substrates |
EP2510551B1 (en) | 2009-12-09 | 2017-08-02 | Solexel, Inc. | Method for manufacturing back contact back junction solar cells |
US8241940B2 (en) | 2010-02-12 | 2012-08-14 | Solexel, Inc. | Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing |
KR20130051013A (ko) | 2010-06-09 | 2013-05-16 | 솔렉셀, 인크. | 고생산성 박막 증착 방법 및 시스템 |
US8828765B2 (en) | 2010-06-09 | 2014-09-09 | Alliance For Sustainable Energy, Llc | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces |
SG186283A1 (en) | 2010-06-14 | 2013-01-30 | Trutag Technologies Inc | System for producing a packaged item with an identifier |
US8946547B2 (en) | 2010-08-05 | 2015-02-03 | Solexel, Inc. | Backplane reinforcement and interconnects for solar cells |
WO2012121706A1 (en) | 2011-03-08 | 2012-09-13 | Alliance For Sustainable Energy, Llc | Efficient black silicon photovoltaic devices with enhanced blue response |
WO2012135469A1 (en) * | 2011-03-29 | 2012-10-04 | Natcore Technology, Inc. | Method of controlling silicon oxide film thickness |
EP2710639A4 (en) | 2011-05-20 | 2015-11-25 | Solexel Inc | SELF-ACTIVATED FRONT SURFACE POLARIZATION FOR A SOLAR CELL |
MY167902A (en) * | 2011-05-26 | 2018-09-26 | Solexel Inc | Method and apparatus for reconditioning a carrier wafer for reuse |
DE102013221522A1 (de) * | 2013-10-01 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten |
DE102013219886A1 (de) | 2013-10-01 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten |
US20170243774A1 (en) * | 2014-09-04 | 2017-08-24 | Applied Materials, Inc. | Method and apparatus for forming porous silicon layers |
US9799541B1 (en) | 2014-12-18 | 2017-10-24 | Trutag Technologies, Inc. | Multiple wafer single bath etcher |
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Also Published As
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EP2427914A1 (en) | 2012-03-14 |
CN102460716B (zh) | 2015-03-25 |
US9869031B2 (en) | 2018-01-16 |
US20110030610A1 (en) | 2011-02-10 |
US20150315719A1 (en) | 2015-11-05 |
MY165969A (en) | 2018-05-18 |
EP2427914A4 (en) | 2013-06-05 |
JP5872456B2 (ja) | 2016-03-01 |
WO2010129719A1 (en) | 2010-11-11 |
JP2012526398A (ja) | 2012-10-25 |
US8999058B2 (en) | 2015-04-07 |
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