PT3321973T - Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar - Google Patents

Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar

Info

Publication number
PT3321973T
PT3321973T PT161979729T PT16197972T PT3321973T PT 3321973 T PT3321973 T PT 3321973T PT 161979729 T PT161979729 T PT 161979729T PT 16197972 T PT16197972 T PT 16197972T PT 3321973 T PT3321973 T PT 3321973T
Authority
PT
Portugal
Prior art keywords
solar cell
transparent
manufacturing
conductive layer
front contacts
Prior art date
Application number
PT161979729T
Other languages
English (en)
Original Assignee
Meyer Burger Germany Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meyer Burger Germany Ag filed Critical Meyer Burger Germany Ag
Publication of PT3321973T publication Critical patent/PT3321973T/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
PT161979729T 2016-11-09 2016-11-09 Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar PT3321973T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP16197972.9A EP3321973B1 (de) 2016-11-09 2016-11-09 Kristalline solarzelle mit einer transparenten, leitfähigen schicht zwischen den vorderseitenkontakten und verfahren zur herstellung einer solchen solarzelle

Publications (1)

Publication Number Publication Date
PT3321973T true PT3321973T (pt) 2021-03-16

Family

ID=57256201

Family Applications (1)

Application Number Title Priority Date Filing Date
PT161979729T PT3321973T (pt) 2016-11-09 2016-11-09 Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar

Country Status (10)

Country Link
US (1) US11444211B2 (pt)
EP (1) EP3321973B1 (pt)
JP (1) JP7149281B2 (pt)
KR (1) KR102271715B1 (pt)
CN (1) CN110249433B (pt)
ES (1) ES2864687T3 (pt)
MY (1) MY185556A (pt)
PT (1) PT3321973T (pt)
TW (1) TWI750255B (pt)
WO (1) WO2018087201A1 (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI705572B (zh) * 2019-07-03 2020-09-21 太極能源科技股份有限公司 具有氮氧化矽鈍化層的太陽電池及其製造方法
EP3770975B1 (en) * 2019-07-26 2021-11-24 Meyer Burger (Germany) GmbH Photovoltaic device and method for manufacturing the same
CN110504045A (zh) * 2019-08-09 2019-11-26 江苏国瓷泓源光电科技有限公司 一种高拉力的晶硅太阳能电池perc铝浆及其制备方法
CN111640823B (zh) * 2020-06-11 2022-05-17 常州时创能源股份有限公司 一种n型钝化接触电池及其制备方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3831857A1 (de) * 1988-09-20 1990-03-22 Meinhard Prof Dr Ing Knoll Verfahren zur herstellung eines lichtdurchlaessigen dielektrikums aus einer dotierten silizium-verbindung bei einer inversionsschicht-solarzelle
US5356488A (en) * 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
KR100974220B1 (ko) * 2006-12-13 2010-08-06 엘지전자 주식회사 태양전지
TW200929575A (en) 2007-12-28 2009-07-01 Ind Tech Res Inst A passivation layer structure of the solar cell and the method of the fabricating
TW201005963A (en) 2008-07-17 2010-02-01 Big Sun Energy Technology Inc Solar cell with high photon utilization and method of manufacturing the same
US8049862B2 (en) * 2008-08-08 2011-11-01 Apple Inc. Indium tin oxide (ITO) layer forming
KR101139443B1 (ko) * 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
DE102009044052A1 (de) * 2009-09-18 2011-03-24 Schott Solar Ag Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls
WO2011066300A1 (en) * 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
US20130233378A1 (en) * 2009-12-09 2013-09-12 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers
TW201123481A (en) * 2009-12-29 2011-07-01 Auria Solar Co Ltd Solar cell and manufacturing method thereof
US20110162706A1 (en) * 2010-01-04 2011-07-07 Applied Materials, Inc. Passivated polysilicon emitter solar cell and method for manufacturing the same
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
WO2011119910A2 (en) 2010-03-26 2011-09-29 Tetrasun, Inc. Shielded electrical contact and doping through a passivating dielectric layer in a high-efficiency crystalline solar cell, including structure and methods of manufacture
JP5424270B2 (ja) 2010-05-11 2014-02-26 国立大学法人東京農工大学 半導体ソーラーセル
US20110277825A1 (en) * 2010-05-14 2011-11-17 Sierra Solar Power, Inc. Solar cell with metal grid fabricated by electroplating
US8110431B2 (en) * 2010-06-03 2012-02-07 Suniva, Inc. Ion implanted selective emitter solar cells with in situ surface passivation
KR20120088029A (ko) * 2010-10-18 2012-08-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
DE102011002280A1 (de) * 2011-04-27 2012-10-31 Solarworld Innovations Gmbh Solarzellen und Verfahren zum Herstellen einer Solarzelle
US20150034141A1 (en) * 2011-12-14 2015-02-05 Dow Corning Corporation Photovoltaic Cell And An Article Including An Isotropic Or Anisotropic Electrically Conductive Layer
CN202855746U (zh) * 2012-08-20 2013-04-03 江苏格林保尔光伏有限公司 一种高转化率的太阳能组件
TWI525642B (zh) * 2012-09-13 2016-03-11 達泰科技股份有限公司 導電漿料及其用於製造光伏元件之用途
KR20140046617A (ko) * 2012-10-09 2014-04-21 삼성코닝정밀소재 주식회사 산화아연 전구체 및 이를 이용한 산화아연계 박막 증착방법
CN103094394B (zh) * 2013-01-18 2015-10-07 厦门大学 一种下转换晶体硅太阳能电池及其制备方法
KR101541415B1 (ko) * 2013-07-25 2015-08-03 한국에너지기술연구원 성능이 향상된 기판을 포함하는 태양전지 및 그 제조 방법
KR20150021829A (ko) * 2013-08-21 2015-03-03 현대중공업 주식회사 태양전지의 제조방법
CN104465799B (zh) * 2013-09-25 2017-04-05 比亚迪股份有限公司 一种晶体硅太阳能电池及其制备方法
DE102013219561A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang
JP2016012590A (ja) 2014-06-27 2016-01-21 国立大学法人東京農工大学 半導体材料のパッシベーション方法
US20180062008A1 (en) * 2016-08-23 2018-03-01 Solarcity Corporation Method and system for manufacturing electrical contact for photovoltaic structures

Also Published As

Publication number Publication date
ES2864687T3 (es) 2021-10-14
US20200058806A1 (en) 2020-02-20
EP3321973B1 (de) 2021-01-06
TWI750255B (zh) 2021-12-21
TW201830715A (zh) 2018-08-16
EP3321973A1 (de) 2018-05-16
CN110249433B (zh) 2022-03-25
KR20190092412A (ko) 2019-08-07
US11444211B2 (en) 2022-09-13
WO2018087201A1 (de) 2018-05-17
CN110249433A (zh) 2019-09-17
JP7149281B2 (ja) 2022-10-06
MY185556A (en) 2021-05-20
KR102271715B1 (ko) 2021-06-30
JP2019534582A (ja) 2019-11-28

Similar Documents

Publication Publication Date Title
EP3540785A4 (en) SOLAR CELL, MANUFACTURING METHOD THEREOF, AND SOLAR MODULE
EP3552229A4 (en) SOLAR CELL MANUFACTURING
GB2546631B (en) Via etch method for back contact multijunction solar cells
EP3565015A4 (en) SOLAR CELL, LIGHT ABSORBING LAYER AND METHOD FOR FORMING LIGHT ABSORBING LAYER
EP3712967A4 (en) SOLAR CELL MANUFACTURING PROCESS
EP3188254A4 (en) Manufacturing method for solar cell module and solar cell module manufactured by same
EP3453075A4 (en) ANTENNA WITH PHOTOVOLTAIC CELLS
EP3252839A4 (en) Solar cell and solar cell manufacturing method
EP3306675A4 (en) Cell module using back contact process and manufacturing method therefor
IL267151A (en) High performance solar cells, arrays and manufacturing processes therefor
EP3151286A4 (en) Solar cell element, method for manufacturing same and solar cell module
EP3136451A4 (en) Crystalline-silicon solar cell, crystalline-silicon solar-cell module, and manufacturing methods therefor
EP3496122A4 (en) SOLAR CELL MODULE
EP3198656A4 (en) Solar cell module and manufacturing method thereof
EP3467880A4 (en) SOLAR MODULE AND METHOD FOR MANUFACTURING THE SAME
PT3321973T (pt) Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar
EP3496121A4 (en) SOLAR CELL MODULE
EP3477708A4 (en) SOLAR CELL MODULE
EP3355375A4 (en) SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
EP3442033A4 (en) SOLAR CELL MODULE
EP3476040A4 (en) SOLAR CELL MODULE, MANUFACTURING METHOD OF SOLAR CELL MODULE, MANUFACTURING METHOD OF ELECTRONIC DEVICE HAVING SOLAR CELL MODULE
EP3522237A4 (en) SOLAR CELL MODULE
EP3471150A4 (en) SOLAR CELL, SOLAR CELL MANUFACTURING SYSTEM, AND SOLAR CELL MANUFACTURING METHOD
EP3306674A4 (en) SOLAR CELL ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
EP3198655A4 (en) Solar cell array, solar cell module and manufacturing method thereof