CN102043350B - 曝光装置、器件制造方法、及曝光装置的控制方法 - Google Patents

曝光装置、器件制造方法、及曝光装置的控制方法 Download PDF

Info

Publication number
CN102043350B
CN102043350B CN201110022027.7A CN201110022027A CN102043350B CN 102043350 B CN102043350 B CN 102043350B CN 201110022027 A CN201110022027 A CN 201110022027A CN 102043350 B CN102043350 B CN 102043350B
Authority
CN
China
Prior art keywords
liquid
mentioned
substrate
exposure
abnormal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110022027.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN102043350A (zh
Inventor
马込伸贵
小林直行
榊原康之
高岩宏明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN102043350A publication Critical patent/CN102043350A/zh
Application granted granted Critical
Publication of CN102043350B publication Critical patent/CN102043350B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H10P72/0606—
    • H10P72/0616—
    • H10P72/50—
    • H10P76/2041—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201110022027.7A 2003-07-28 2004-07-26 曝光装置、器件制造方法、及曝光装置的控制方法 Expired - Fee Related CN102043350B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003281183 2003-07-28
JP2003-281183 2003-07-28
JP2004-045104 2004-02-20
JP2004045104 2004-02-20

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800218561A Division CN100452293C (zh) 2003-07-28 2004-07-26 曝光装置及其控制方法

Publications (2)

Publication Number Publication Date
CN102043350A CN102043350A (zh) 2011-05-04
CN102043350B true CN102043350B (zh) 2014-01-29

Family

ID=34106918

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201110022027.7A Expired - Fee Related CN102043350B (zh) 2003-07-28 2004-07-26 曝光装置、器件制造方法、及曝光装置的控制方法
CN201010240704.8A Expired - Fee Related CN102012641B (zh) 2003-07-28 2004-07-26 曝光装置、器件制造方法
CN201110268975.9A Expired - Fee Related CN102323724B (zh) 2003-07-28 2004-07-26 液浸曝光装置及其制造方法、曝光装置、器件制造方法
CN201410333238.6A Expired - Fee Related CN104122760B (zh) 2003-07-28 2004-07-26 曝光装置、器件制造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN201010240704.8A Expired - Fee Related CN102012641B (zh) 2003-07-28 2004-07-26 曝光装置、器件制造方法
CN201110268975.9A Expired - Fee Related CN102323724B (zh) 2003-07-28 2004-07-26 液浸曝光装置及其制造方法、曝光装置、器件制造方法
CN201410333238.6A Expired - Fee Related CN104122760B (zh) 2003-07-28 2004-07-26 曝光装置、器件制造方法

Country Status (7)

Country Link
US (7) US8451424B2 (enExample)
EP (4) EP2264535B1 (enExample)
JP (13) JP2010109392A (enExample)
KR (10) KR20190002749A (enExample)
CN (4) CN102043350B (enExample)
TW (8) TW201834019A (enExample)
WO (1) WO2005010962A1 (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101304105B1 (ko) 2003-04-11 2013-09-05 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
SG2013077797A (en) 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
KR101134957B1 (ko) 2003-06-19 2012-04-10 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
KR20190002749A (ko) * 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4524670B2 (ja) 2003-08-21 2010-08-18 株式会社ニコン 露光装置、及びデバイス製造方法
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG188876A1 (en) * 2003-08-29 2013-04-30 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
WO2005022616A1 (ja) * 2003-08-29 2005-03-10 Nikon Corporation 露光装置及びデバイス製造方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP4506674B2 (ja) 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
WO2005081292A1 (ja) 2004-02-20 2005-09-01 Nikon Corporation 露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7620499B2 (en) * 2004-04-16 2009-11-17 George Mason Intellectual Properties, Inc. Wavelet maxima curves of surface latent heat flux
KR101440746B1 (ko) 2004-06-09 2014-09-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR20170010907A (ko) 2004-06-10 2017-02-01 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101202230B1 (ko) 2004-07-12 2012-11-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP3870207B2 (ja) 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101364347B1 (ko) 2004-10-15 2014-02-18 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US20080100811A1 (en) * 2004-12-07 2008-05-01 Chiaki Nakagawa Exposure Apparatus and Device Manufacturing Method
KR101197071B1 (ko) 2005-03-30 2012-11-06 가부시키가이샤 니콘 노광 조건의 결정 방법, 노광 방법 및 노광 장치, 그리고디바이스 제조 방법
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1895570A4 (en) * 2005-05-24 2011-03-09 Nikon Corp EXPOSURE METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD
JP4125315B2 (ja) * 2005-10-11 2008-07-30 キヤノン株式会社 露光装置及びデバイス製造方法
US20080073596A1 (en) * 2006-08-24 2008-03-27 Asml Netherlands B.V. Lithographic apparatus and method
TWI597585B (zh) 2006-08-31 2017-09-01 尼康股份有限公司 Exposure method and exposure apparatus, and device manufacturing method
KR101648289B1 (ko) 2006-08-31 2016-08-12 가부시키가이샤 니콘 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법
US20080094592A1 (en) * 2006-08-31 2008-04-24 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
SG174102A1 (en) 2006-09-01 2011-09-29 Nikon Corp Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
EP2071614B1 (en) 2006-09-01 2018-06-20 Nikon Corporation Exposure method and apparatus
JP4366407B2 (ja) * 2007-02-16 2009-11-18 キヤノン株式会社 露光装置及びデバイス製造方法
WO2008129762A1 (ja) 2007-03-05 2008-10-30 Nikon Corporation 移動体装置、パターン形成装置及びパターン形成方法、デバイス製造方法、移動体装置の製造方法、並びに移動体駆動方法
JP2008256155A (ja) * 2007-04-06 2008-10-23 Canon Inc 除振装置、演算装置、露光装置及びデバイス製造方法
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP2009094254A (ja) * 2007-10-05 2009-04-30 Canon Inc 液浸露光装置およびデバイス製造方法
JP2009094255A (ja) 2007-10-05 2009-04-30 Canon Inc 液浸露光装置およびデバイス製造方法
US8115906B2 (en) * 2007-12-14 2012-02-14 Nikon Corporation Movable body system, pattern formation apparatus, exposure apparatus and measurement device, and device manufacturing method
NL1036835A1 (nl) * 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic Apparatus and Method.
JP5001343B2 (ja) * 2008-12-11 2012-08-15 エーエスエムエル ネザーランズ ビー．ブイ． 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法
NL2003854A (en) * 2008-12-22 2010-06-23 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2004820A (en) 2009-06-30 2011-01-04 Asml Netherlands Bv Lithographic apparatus and a method of measuring flow rate in a two phase flow.
JP5753788B2 (ja) 2009-11-06 2015-07-22 保土谷化学工業株式会社 ジフェニルナフチルアミン誘導体
US10061214B2 (en) 2009-11-09 2018-08-28 Nikon Corporation Exposure apparatus, exposure method, exposure apparatus maintenance method, exposure apparatus adjustment method and device manufacturing method
NL2005528A (en) * 2009-12-02 2011-06-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5849505B2 (ja) * 2011-08-05 2016-01-27 大日本印刷株式会社 半導体製造システム
JP6155581B2 (ja) * 2012-09-14 2017-07-05 株式会社ニコン 露光装置、露光方法、デバイス製造方法
WO2014080957A1 (ja) * 2012-11-20 2014-05-30 株式会社ニコン 露光装置、移動体装置、及びデバイス製造方法
JP6107453B2 (ja) * 2013-06-13 2017-04-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2018225117A1 (ja) * 2017-06-05 2018-12-13 ギガフォトン株式会社 レーザ装置、及びｅｕｖ光生成システム
JP6418281B2 (ja) * 2017-06-07 2018-11-07 株式会社ニコン 露光装置
CN110637357A (zh) * 2017-06-21 2019-12-31 惠普印迪格公司 真空工作台
SG11202002228UA (en) 2017-10-12 2020-04-29 Asml Netherlands Bv Substrate holder for use in a lithographic apparatus
JP7015147B2 (ja) * 2017-11-06 2022-02-02 キヤノン株式会社 インプリント装置および物品製造方法
JP2019032552A (ja) * 2018-10-10 2019-02-28 株式会社ニコン 露光装置、露光方法、デバイス製造方法
EP4133335B1 (en) * 2020-04-07 2025-06-18 ASML Netherlands B.V. Differential measurement system
US11978677B2 (en) * 2021-06-24 2024-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer positioning method and apparatus
WO2024078802A1 (en) * 2022-10-12 2024-04-18 Asml Netherlands B.V. Substrate support qualification
CN119414664A (zh) * 2024-12-04 2025-02-11 苏州皓申智能科技有限公司 一种光刻胶涂覆治具及涂覆方法

Family Cites Families (265)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US656670A (en) * 1899-08-25 1900-08-28 Farbenfabriken Of Elberfeld Company Blue anthrarufin dye and process of making same.
SU560683A1 (ru) * 1975-12-23 1977-06-05 Ордена Трудового Красного Знамени Научно-Исследовательский Институт Технологии Автомобильной Промышленности Устройство дл выталкивани поковок
US4270049A (en) 1978-06-12 1981-05-26 Ishikawajima-Harima Jukogyo Kabushiki Kaisha Liquid leakage detection system
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) * 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
US4672271A (en) * 1985-04-15 1987-06-09 Omniprise, Inc. Apparatus and method for automatic operation of a high pressure mercury arc lamp
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH01276043A (ja) 1988-04-28 1989-11-06 Mitsubishi Cable Ind Ltd 導波路型液体検知器
JPH0336940U (enExample) 1989-08-22 1991-04-10
EP0422814B1 (en) 1989-10-02 1999-03-17 Canon Kabushiki Kaisha Exposure apparatus
JP2885845B2 (ja) * 1989-10-02 1999-04-26 キヤノン株式会社 Ｘ線露光装置
JPH0449614A (ja) * 1990-06-19 1992-02-19 Canon Inc Ｘ線露光装置
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JP2830492B2 (ja) 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) * 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0590351U (ja) 1991-05-20 1993-12-10 株式会社ツーデン 漏液センサ
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH05173639A (ja) * 1991-12-20 1993-07-13 Fujitsu Ltd 位置制御装置及びその制御方法
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
US5559582A (en) * 1992-08-28 1996-09-24 Nikon Corporation Exposure apparatus
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH06288915A (ja) * 1993-03-30 1994-10-18 Dainippon Screen Mfg Co Ltd 処理液検出装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JPH0886612A (ja) * 1994-09-19 1996-04-02 Canon Inc 光ヘテロダイン干渉を利用した位置ずれ検出装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3137174B2 (ja) 1995-09-08 2001-02-19 横河電機株式会社 Ｉｃテスタのテストヘッド
KR100228036B1 (ko) 1996-02-09 1999-11-01 니시무로 타이죠 표면에너지 분포측정장치 및 측정방법
US5885134A (en) 1996-04-18 1999-03-23 Ebara Corporation Polishing apparatus
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
KR20030096435A (ko) 1996-11-28 2003-12-31 가부시키가이샤 니콘 노광장치 및 노광방법
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
JPH10335236A (ja) 1997-05-28 1998-12-18 Nikon Corp 露光装置、その光洗浄方法及び半導体デバイスの製造方法
EP0874283B1 (en) 1997-04-23 2003-09-03 Nikon Corporation Optical exposure apparatus and photo-cleaning method
US6268904B1 (en) 1997-04-23 2001-07-31 Nikon Corporation Optical exposure apparatus and photo-cleaning method
JPH10335235A (ja) 1997-05-28 1998-12-18 Nikon Corp 露光装置、その光洗浄方法及び半導体デバイスの製造方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3377165B2 (ja) * 1997-05-19 2003-02-17 キヤノン株式会社 半導体露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH1131647A (ja) * 1997-07-11 1999-02-02 Oki Electric Ind Co Ltd 投影露光装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JP4208277B2 (ja) * 1997-11-26 2009-01-14 キヤノン株式会社 露光方法及び露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11204390A (ja) * 1998-01-14 1999-07-30 Canon Inc 半導体製造装置およびデバイス製造方法
JPH11264756A (ja) * 1998-03-18 1999-09-28 Tokyo Electron Ltd 液面検出器および液面検出方法、ならびに基板処理装置
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
AU1179200A (en) * 1998-11-18 2000-06-05 Nikon Corporation Exposure method and device
EP1018669B1 (en) 1999-01-08 2006-03-01 ASML Netherlands B.V. Projection lithography with servo control
US6566770B1 (en) * 1999-06-15 2003-05-20 Canon Kabushiki Kaisha Semiconductor manufacturing apparatus and device manufacturing method
AU5653699A (en) 1999-09-20 2001-04-24 Nikon Corporation Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
EP1107067B1 (en) * 1999-12-01 2006-12-27 ASML Netherlands B.V. Positioning apparatus and lithographic apparatus comprising the same
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001203145A (ja) * 2000-01-20 2001-07-27 Nikon Corp 露光装置
TW588222B (en) 2000-02-10 2004-05-21 Asml Netherlands Bv Cooling of voice coil motors in lithographic projection apparatus
JP2001308003A (ja) * 2000-02-15 2001-11-02 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
US6472643B1 (en) 2000-03-07 2002-10-29 Silicon Valley Group, Inc. Substrate thermal management system
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP2001345245A (ja) 2000-05-31 2001-12-14 Nikon Corp 露光方法及び露光装置並びにデバイス製造方法
JP2002015978A (ja) * 2000-06-29 2002-01-18 Canon Inc 露光装置
JP3469537B2 (ja) 2000-07-21 2003-11-25 サンクス株式会社 漏液センサ
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
US6852988B2 (en) * 2000-11-28 2005-02-08 Sumitomo Heavy Industries, Ltd. Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002305140A (ja) * 2001-04-06 2002-10-18 Nikon Corp 露光装置及び基板処理システム
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP2002365809A (ja) * 2001-06-12 2002-12-18 Nsk Ltd 分割逐次露光装置
TW569288B (en) * 2001-06-19 2004-01-01 Tokyo Electron Ltd Substrate processing apparatus, liquid processing apparatus and liquid processing method
KR20030002514A (ko) 2001-06-29 2003-01-09 삼성전자 주식회사 웨이퍼가 장착될 척을 냉각시키기 위한 냉매 경로에서의냉매 누설을 감지할 수 있는 냉각 시스템
TWI226077B (en) * 2001-07-05 2005-01-01 Tokyo Electron Ltd Liquid processing apparatus and liquid processing method
JP2003022958A (ja) * 2001-07-09 2003-01-24 Canon Inc 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2003037051A (ja) * 2001-07-25 2003-02-07 Canon Inc 露光装置及びその制御方法、並びに半導体デバイスの製造方法
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
JP2003142366A (ja) * 2001-10-31 2003-05-16 Canon Inc 投影露光装置および該装置に用いるガス状態監視方法
JP3880480B2 (ja) * 2001-12-06 2007-02-14 東京エレクトロン株式会社 液処理装置
TWI236944B (en) 2001-12-17 2005-08-01 Tokyo Electron Ltd Film removal method and apparatus, and substrate processing system
JP3990148B2 (ja) * 2001-12-17 2007-10-10 東京エレクトロン株式会社 処理システム
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
KR20040104691A (ko) 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
JP2004072076A (ja) * 2002-06-10 2004-03-04 Nikon Corp 露光装置及びステージ装置、並びにデバイス製造方法
TWI307526B (en) 2002-08-06 2009-03-11 Nikon Corp Supporting device and the mamufacturing method thereof, stage device and exposure device
TWI242691B (en) 2002-08-23 2005-11-01 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
KR20050062665A (ko) * 2002-12-10 2005-06-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
KR101157002B1 (ko) * 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004053951A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
KR100967835B1 (ko) 2002-12-13 2010-07-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 층상 스폿 조사 방법 및 장치에서의 액체 제거
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
ATE365962T1 (de) 2002-12-19 2007-07-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
KR101121655B1 (ko) 2003-04-10 2012-03-09 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101304105B1 (ko) 2003-04-11 2013-09-05 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
SG2013077797A (en) 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
ATE542167T1 (de) 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN1307456C (zh) 2003-05-23 2007-03-28 佳能株式会社 投影光学系统、曝光装置及器件的制造方法
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI442694B (zh) 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1489461A1 (en) 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
US7128024B2 (en) * 2003-07-15 2006-10-31 Doyle Ii John Conan System and method for measuring animals
SG109000A1 (en) * 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) * 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR20190002749A (ko) * 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
JP4492600B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1660925B1 (en) 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
TWI361450B (en) 2003-10-31 2012-04-01 Nikon Corp Platen, stage device, exposure device and exposure method
US20070105050A1 (en) 2003-11-05 2007-05-10 Dsm Ip Assets B.V. Method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US8854602B2 (en) 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
KR100965330B1 (ko) 2003-12-15 2010-06-22 칼 짜이스 에스엠티 아게 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102207609B (zh) 2004-01-14 2013-03-20 卡尔蔡司Smt有限责任公司 反射折射投影物镜
CN101799587B (zh) 2004-01-16 2012-05-30 卡尔蔡司Smt有限责任公司 光学系统、投影系统及微结构半导体部件的制造方法
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
KR101204157B1 (ko) 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP4506674B2 (ja) 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
US8852850B2 (en) 2004-02-03 2014-10-07 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
JP2007522508A (ja) 2004-02-13 2007-08-09 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィック投影露光装置のための投影対物レンズ
CN1922528A (zh) 2004-02-18 2007-02-28 康宁股份有限公司 用于具有深紫外光的高数值孔径成象的反折射成象系统
WO2005081292A1 (ja) * 2004-02-20 2005-09-01 Nikon Corporation 露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法
JP2005259789A (ja) 2004-03-09 2005-09-22 Nikon Corp 検知システム及び露光装置、デバイス製造方法
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
JP2005268700A (ja) 2004-03-22 2005-09-29 Nikon Corp ステージ装置及び露光装置
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US20050243392A1 (en) * 2004-04-30 2005-11-03 Fujifilm Electronic Imaging Ltd. Method of controlling the motion of a spinner in an imaging device
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
WO2005111689A2 (en) 2004-05-17 2005-11-24 Carl Zeiss Smt Ag Catadioptric projection objective with intermediate images
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101199076B1 (ko) 2004-06-04 2012-11-07 칼 짜이스 에스엠티 게엠베하 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
CN100594430C (zh) 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101364347B1 (ko) 2004-10-15 2014-02-18 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2002-15978A 2002.01.18
JP特开平11-204390A 1999.07.30

Also Published As

Publication number Publication date
EP1653501A4 (en) 2008-05-21
US8451424B2 (en) 2013-05-28
CN102323724A (zh) 2012-01-18
TW201403667A (zh) 2014-01-16
TW201705213A (zh) 2017-02-01
US20060146305A1 (en) 2006-07-06
JP2015172772A (ja) 2015-10-01
EP2264535A2 (en) 2010-12-22
TWI490915B (zh) 2015-07-01
JP2010118690A (ja) 2010-05-27
EP2264534B1 (en) 2013-07-17
KR20140027560A (ko) 2014-03-06
WO2005010962A1 (ja) 2005-02-03
KR101785707B1 (ko) 2017-11-06
JP2010109393A (ja) 2010-05-13
EP2264534A2 (en) 2010-12-22
HK1151106A1 (en) 2012-01-20
US9760026B2 (en) 2017-09-12
US8749757B2 (en) 2014-06-10
JP2019049740A (ja) 2019-03-28
JP2012151493A (ja) 2012-08-09
EP2264534A3 (en) 2011-04-20
JP2014017527A (ja) 2014-01-30
KR20130086635A (ko) 2013-08-02
JP2016170437A (ja) 2016-09-23
US20190121246A1 (en) 2019-04-25
KR101298864B1 (ko) 2013-08-21
CN104122760A (zh) 2014-10-29
TWI575563B (zh) 2017-03-21
TW200509212A (en) 2005-03-01
JP5287926B2 (ja) 2013-09-11
CN102012641B (zh) 2015-05-06
HK1151107A1 (en) 2012-01-20
TW201403666A (zh) 2014-01-16
JP6020653B2 (ja) 2016-11-02
EP2264533A3 (en) 2011-04-20
KR20110117207A (ko) 2011-10-26
CN104122760B (zh) 2017-04-19
TWI424463B (zh) 2014-01-21
KR20160088447A (ko) 2016-07-25
US20170038694A1 (en) 2017-02-09
KR101641011B1 (ko) 2016-07-19
TWI633581B (zh) 2018-08-21
US7505115B2 (en) 2009-03-17
US20060132737A1 (en) 2006-06-22
EP1653501B1 (en) 2012-09-19
TW201403669A (zh) 2014-01-16
JP2010109392A (ja) 2010-05-13
JP2017194723A (ja) 2017-10-26
KR101935709B1 (ko) 2019-01-04
KR20170117232A (ko) 2017-10-20
JP6292252B2 (ja) 2018-03-14
TW201403668A (zh) 2014-01-16
KR20190002749A (ko) 2019-01-08
TWI490916B (zh) 2015-07-01
KR101599649B1 (ko) 2016-03-14
KR101414896B1 (ko) 2014-07-03
JP5664740B2 (ja) 2015-02-04
HK1200922A1 (en) 2015-08-14
CN102323724B (zh) 2014-08-13
US9494871B2 (en) 2016-11-15
TWI490914B (zh) 2015-07-01
US10185232B2 (en) 2019-01-22
JP2014140079A (ja) 2014-07-31
EP2264535A3 (en) 2011-04-20
KR20060052882A (ko) 2006-05-19
KR101403117B1 (ko) 2014-06-03
JP2010118689A (ja) 2010-05-27
JP5594399B2 (ja) 2014-09-24
TW201834019A (zh) 2018-09-16
CN102012641A (zh) 2011-04-13
EP1653501A1 (en) 2006-05-03
US20140233002A1 (en) 2014-08-21
JP5088389B2 (ja) 2012-12-05
KR101642670B1 (ko) 2016-07-25
JP2011160001A (ja) 2011-08-18
JP5423829B2 (ja) 2014-02-19
HK1151105A1 (en) 2012-01-20
EP2264533A2 (en) 2010-12-22
US20170363972A1 (en) 2017-12-21
US20130135597A1 (en) 2013-05-30
TW201205644A (en) 2012-02-01
JP5170126B2 (ja) 2013-03-27
KR20140119832A (ko) 2014-10-10
HK1090175A1 (en) 2006-12-15
KR20120066054A (ko) 2012-06-21
TWI547971B (zh) 2016-09-01
KR20150092349A (ko) 2015-08-12
EP2264535B1 (en) 2013-02-13
EP2264533B1 (en) 2012-09-19
JP5776818B2 (ja) 2015-09-09
JP2013214761A (ja) 2013-10-17
KR101343720B1 (ko) 2013-12-20
CN102043350A (zh) 2011-05-04

Similar Documents

Publication Publication Date Title
CN102043350B (zh) 曝光装置、器件制造方法、及曝光装置的控制方法
JP2005268742A (ja) 露光装置及びデバイス製造方法、並びに露光装置の制御方法
CN101436002B (zh) 曝光装置、器件制造方法、及曝光装置的控制方法
HK1234165A1 (en) Exposure apparatus and device producing method
HK1234165B (zh) 曝光装置、器件制造方法
HK1200922B (en) Exposure apparatus and device producing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140129

Termination date: 20200726