CN101802254A - 化学气相沉积反应器 - Google Patents
化学气相沉积反应器 Download PDFInfo
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Abstract
提供了CVD反应器,如进行外延层的金属有机化学气相沉积的MOCVD反应器。CVD或MOCVD反应器一般包括流量法兰组件、可调整的比例流喷射器组件、腔室组件和多节段中心旋转轴。反应器向用于减少气体使用并同时改善沉积的性能的特定元件提供新颖的几何形状。
Description
相关申请的交叉引用
本申请要求2007年10月11日递交的第60/979,181号美国临时申请的权益,将该临时申请的全部内容以参考的方式并入本申请。
技术领域
本发明涉及化学气相沉积(“CVD”)反应器,包括金属有机化学气相沉积(“MOCVD”)反应器。
背景技术
化学气相沉积(“CVD”)反应器,尤其是金属有机化学气相沉积(“MOCVD”)反应器,用于将固体材料沉积在晶片上。这种材料一般包括周期表中第III族栏和第V族栏的元素(被称为III-V材料,但也包括“II-VI材料”)的化合物。使用这些反应器还将诸如硅(Si)、碳化硅(SiC)、氧化锌(ZnO)等的材料沉积在晶片或其它表面上。在商业上,这些反应器用于制造固态(半导体)微电子装置、光学装置和光电(太阳能)装置以及其它电子/光电子材料和装置。
在操作中,通常通过(通常)位于晶片承载片(wafer carrier)的下表面下方的加热器组件将扁平圆柱形晶片承载片加热至所需的温度(450℃-1400℃),晶片承载片带有装载在晶片承载片上表面上的浅凹口中的一个或多个晶片。
连续供应的气体混合物被引导以在被加热的晶片承载片和晶片的表面上流动。气体混合物主要(约75%-95%)是载气,其是用于在反应器中限定一般的流动模式并适当地稀释反应气体的适当惰性气体(一般为氢或氮)。气体混合物的剩余包括第V族反应气体(约4%-23%)、第III族反应性蒸气(约1%-2%)和掺杂气体或蒸气(痕量)。
第V族气体紧邻被加热的晶片承载片和晶片的表面上方和表面上分解,允许中央的第V族元素的原子合并到被沉积的材料层(位于晶片上和位于晶片承载片上)中。同样地,第III族气体分解以提供第III族的元素。同样地,掺杂气体分解以提供用于改变半导体材料导电特性的原子。
在晶片承载片和晶片的表面上径向向外流动后,气体混合物(现在还包含反应副产物)经过一个或多个排出口离开反应器。通常使用真空泵以抽吸气体混合物通过反应器,尤其是因为大多数材料最优地在比大气压力低的压力下沉积。气体混合物在被加热的晶片承载片上方经过后,开始快速地冷却,这导致副产物快速凝固为固体状态。它们易于包覆反应器腔室(在晶片承载片下方)和排出管路的内表面。
晶片承载片通常以从100RPM到超过1000RPM的转速旋转,以有助于均匀地分布流动的气体混合物,并减小传质(mass-transport)边界层的厚度,这提高了反应物使用以及副产物去除的效率。
使用该方法使材料分批沉积。在分批运行过程中并不连续地供应反应物。如下进行通常的分批运行。在运行的初始阶段期间,仅以低的流速供应载气。接着同时地,将晶片承载片的旋转逐渐增大到期望值,将晶片承载片的温度增加到期望值,并将载气流速增加到期望值。通常,首先将第V族反应气体(以特定的温度水平)切换到反应器中,以稳定衬底晶片的表面(防止第V族原子的脱附),接着将第III族和掺杂气体切换进来,以影响材料层的“生长”(仅当至少一种第V族和至少一种第III族源被切换到反应器时才发生材料生长)。可能出现无第III族或掺杂气体供应到反应器的短暂停顿,但是通常在整个生长阶段期间(当温度高于约350℃-400℃时)供应至少一种第V族气体。
一旦所有的材料层进行了生长,则将温度逐渐下降。一旦温度低于约350℃,则切断第V族反应气体,并且将旋转、温度和载气流速降低到开始的水平。接着通过打开反应器腔室顶部或通过利用机械装置将整个晶片承载片从反应器腔室移出而将晶片从晶片承载片上移除。取决于被沉积的材料,可以将同一晶片承载片用于多批次运行,或仅用于一次运行,然后必须将沉积在暴露的上表面上的多余材料清除。
目前在市场中使用多种已知的MOCVD反应器系统。这些已知的MOCVD反应器中每一种均具有缺陷和缺点。
一种设计使用具有气流喷射顶盖的高圆筒形容器,其试图将气流均匀地分布在整个盖区域上。竖直的分离在有限的程度上防止副产物材料在盖的内表面上的沉积,而气流穿过盖的内表面进入。然而,这种盖的设计所具有的缺点包括:盖中多个气体分布“区域”的无效隔离,这导致预先反应和副产物材料的沉积;气流在来自供气管路的大区域面积上的无效分布,这导致非最优的材料特性以及在盖的内表面上的额外材料沉积;以及需要高气体流速以产生从盖经过大的腔室容积的相对均匀的流出流。
第二种设计使用具有与(被加热的)沉积表面紧密间隔的气流喷射顶盖的短圆筒形容器。紧密的间隙有效地使反应器容积最小化并提供气体与沉积表面的有效接触,并且气体腔室隔离是有效的。然而,紧密的间隙导致副产物材料在盖的内表面上沉积并几乎在每次工艺运行后均需要清洁,这样需要更多的维护时间和成本以及更少的生产时间。除了高的维护成本,由于盖的复杂性和大的面积,制造顶盖的成本也是非常高的。
使用这两种设计均是昂贵的。第一种设计具有非常高的操作成本并产生质量及性能较低的产品。第二种设计具有相对较低的操作成本,但是具有较高的系统维护要求。
期望具有较低的生产代价和操作成本的CVD反应器系统。期望具有改善的被沉积的材料的特性、高正常工作时间和高质量的CVD反应器系统。
发明内容
提供了CVD反应器,例如进行外延层的金属有机化学气相沉积的MOCVD反应器。CVD或MOCVD反应器一般包括一个或多个流量法兰组件、可调整的比例流喷射器组件、腔室组件和多节段中心旋转轴。
CVD反应器向用于减少气体使用并同时改善沉积的性能的特定元件提供了新颖的几何形状。一方面,描述了多个具有新颖几何形状的CVD反应器元件。另一方面,描述了解决常规CVD反应器的问题的新元件。例如,腔室顶壁和侧壁具有与常规元件明显不同的几何形状。顶壁和侧壁形成了外展的或弯曲的锥形表面。反应器的离开区域也具有改进的几何形状,包括渐缩的或倾斜的表面。本发明的一实施方案中包括新颖的气体喷射器以进一步改善性能和经济性。
创造性的设计提供了多个优点。CVD反应器减小了反应器的容积,提供了引导进入的气体流与沉积表面紧密接触的导流表面,提供了额外的导流表面以防止废反应气体反向进入主反应容积,提供了主要内部反应器表面的高度均匀的流体冷却或温度控制,并提供了减小沉积表面热损失的装置。
反应器的设计解决现有设计的多个问题,这些问题包括但不限于以下:(1)高的/低效的气体和化学品使用,(2)进入的气体流的非均匀分布,(3)设备的高制造成本,以及(4)难以解决的副产物材料在内部反应器表面上的沉积。其结果是较低的操作成本、被沉积的材料层的改善的特征和较低的机器维护要求等优点。
与其它设计的竖直圆柱形壁相反,流量法兰组件包括三维渐缩或外展的锥形上表面和紧接该表面后侧的薄的流体间隙。该设计减小了反应器容积和气体使用,有效地将气体向沉积表面导引以实现更有效的化学品使用,并提供了大致均匀的径向速度以实现改进的沉积均匀性。
可调整的比例流喷射器具有若干特点,包括小于沉积表面的面积、隔离的流区域、不具有分隔屏障的单一可调整的流区域以及均匀的冷却流体流型。通过提供较低的气体流速、较低的制造成本、无区域交叉泄露(zone cross leak)及所产生的预反应(pre-reaction)和副产物材料沉积以及被沉积的材料的改善的均匀性,这些特点解决现有技术的喷射器中的若干问题。
在一实施方案中,可调整的比例流喷射器组件包括用于分隔地保持一个或多个反应气体流的一个或多个气体腔室和用于在将气体喷射到反应器腔室中之前调节气体温度的流体空腔。可调整的比例流喷射器组件从供应管接收一个或多个气体流入流并散布/扩散这些流以实现均匀的流出流速度,并同时使气流在其离开前保持分离,还调节气体在离开可调整的比例流喷射器组件时的温度。
在一实施方案中,腔室组件一般包括锥形或倾斜的下部流动导引件。下部流动导引件防止气体再循环回到反应区域中,改善从晶片承载片的外缘流动到排气口中的平顺性以实现更稳定的整体反应器流型,减少晶片承载片的外缘处的热损失以实现更好的温度均匀性和改善的材料特征。
晶片承载片的一实施方案具有由耐高温材料制成的圆柱形板,其将衬底晶片保持在反应器容积内,并在本发明的实施方案中将从加热器组件接收的热传递至晶片。中心旋转轴一般与晶片承载片相通并引起晶片承载片的旋转运动。在一实施方案中,中心旋转轴通常结合旋转真空馈孔(如铁磁流体密封类型(ferrofluid sealed type))穿透基板中轴线,并且在反应器内支撑晶片承载片和使晶片承载片旋转。
在一具体实施方案中,反应器包括具有顶部和底部的两件式晶片承载片,顶部具有最适于保持衬底晶片的性质,底部具有最适于热吸收的性质。
在一实施方案中提供了多节段中心旋转轴。多节段轴具有可任选地用于反应器中的两个或更多节段。多节段轴的至少一个节段由具有低热传导率的材料制成。多节段轴可具有被设计为具有高的热传递抵抗性的节段分界面,以减少晶片承载片的热损失。多节段轴可在晶片承载片的中心附近产生额外的热并向晶片承载片和/或轴的热损失提供热障。
附图说明
以下是对一同递交的附图的一般性描述。
图1是整个反应器腔室组件的一实施方案的立体图。
图2是整个反应器腔室组件的一实施方案的侧视图。
图3-5示出整个反应器腔室组件的一实施方案的横截面图。
图6示出流量法兰组件的一实施方案的立体图。
图7示出流量法兰组件的一实施方案的分解侧视图。
图8示出流量法兰组件的一实施方案的分解下侧视图。
图9a-c示出上部流动导引件的一实施方案的3个横截面侧视图。
图10示出上部流动导引件的一实施方案的放大横截面图。
图11示出可调整的比例流喷射器组件的一实施方案的侧视图。
图12示出可调整的比例流喷射器组件的一实施方案的分解侧视图。
图13-15示出可调整的比例流喷射器组件的一实施方案的3个横截面图。
图16示出可调整的比例流喷射器气体腔室机械加工件的一实施方案的俯视内部视图。
图17示出可调整的比例流喷射器组件的以实施方案的仰视图。
图18示出可调整的比例流喷射器组件的、密封至流量法兰组件的双O形圈密封的放大横截面图。
图19示出腔室组件的一实施方案的立体图。
图20示出腔室组件的一实施方案的俯视图。
图21a和21b示出了中心旋转轴组件一实施方案的两个分解图。
图22示出中心旋转轴组件一实施方案的侧视图。
图23示出中心旋转轴组件一实施方案的横截面图。
图24示出中心旋转轴组件一实施方案的放大横截面图。
图25a-c示出了可调整的比例流喷射器组件的气体腔室的子组件的另一实施方案。
发明的详细描述
使用优选实施方案对本发明进行详细的描述。然而,本发明不限于这些实施方案。另外,一实施方案中的要求可自由地应用于其它实施方案,并且除非附带特殊条件,否则要求可以相互代替。具体地,以下对CVD反应器或MOCVD反应器以及反应器的元件和部件进行更详细的描述。CVD反应器或MOCVD反应器可包括本文未具体提及的其它元件和部件。此外,应该理解,本发明的范围涉及可包括本文所讨论的元件和部件中的一些或可包括本文所讨论的元件和部件的全部的CVD反应器或MOCVD反应器。
图1图示了整个反应器组件1的一实施方案的前侧立体图。整个反应器组件1包括3个子组件,其共同形成整个反应器组件1。这3个子组件是流量法兰组件3、可调整的比例流喷射器组件5和腔室组件10。图2图示了反应器1的侧视图以及从反应器1的外部可见的单独元件中的一些元件。以下对这些元件进行更详细的讨论。
图3-5图示了示出3个子组件的相互连接的整个反应器组件1的横截面图,和组成这3个子组件的单独元件的横截面图。在图1和2中图示了流量法兰组件2、可调整的比例流喷射器组件5和腔室组件7。还显示了3个子组件3、5和7的单独元件,并在以下对这些单独元件进行更详细的讨论。
图6-10和18示出了流量法兰组件3的一实施方案的若干视图。流量法兰组件3包括主法兰本体30并具有上部开口31,上部开口31限定了用于位于顶部的流喷射器组件5的装配口并装配至位于底端的腔室组件10(在图3-5的横截面图中最佳地示出)。流量法兰组件3具有装配在主法兰本体30内的上部流动导引件32,其与流喷射器和晶片承载片一起限定反应器容积33和反应器容积内的气体流型。
上部流动导引件32优选地具有三维渐缩锥形的且面向外的表面34(与现有技术设计的竖直圆柱形壁不同)。上部流动导引件32被定位且装配在主法兰本体30中(在图7和8中最佳地示出)。主法兰本体30的下侧35具有接收上部流动导引件32的面向内的表面36的相应形状,使得紧邻上部流动导引件32后方且在上部流动导引件32与主法兰本体30之间形成薄的流体间隙或空腔37(在图8-10中最佳地图示)。在如图9a-c中所示的实施方案中,流体空腔采集通道41、42(这里是两个点)通过流动孔40与薄的流体空腔37连接。
上部流动导引件32的几何形状使反应器腔室容积最小化,抑制了反应器腔室容积33内的再循环涡旋并提供反应气体与晶片承载片表面77的有效接触。
在一实施方案中,如图3-5中最佳地示出,上部流动导引件32具有第一(上部)直径D1和第二(下部)直径D2,第一(上部)直径D1与可调整的比例流喷射器(AFPI)7的直径基本上相等,第二(下部)直径D2与晶片承载片76的直径d3基本上相等。如图所示,第一直径D1小于第二直径D2。第一直径D1优选地为第二直径D2的约0.2到0.5。上部流动导引件32并非严格的锥形,而是弯曲的,因为导引件向下延伸并在接近D2时外展。上部流动导引件32产生一种气体流型,其中均匀分布的、向下流动的气流被引向晶片承载片76,但是气流还横向转向并延伸,从而能够使用较小直径的流喷射器5以在基本上较大的晶片承载片76上均匀地分布流,而在反应器腔室容积33内不会发生气体再循环。
上部流动导引件32的弯曲或外展轮廓提供大致相等的径向气体速度。可替换地,具有这种几何形状的上部流动导引件32被称为膨胀锥形上部流动导引件32。尽管不受理论约束,对于径向向外移动的气流而言,气体必须穿过连续增加的横截面积(其随着对于圆柱形几何形状的半径而增加),因此,流速必须降低。为了保持基本上恒定的速度,包含的几何形状的高度H1可以逐渐减小,使得横截面积(周长与高度的乘积)保持基本上恒定,这样抵消了周长随半径的增加。
流量法兰组件3优选地具有紧邻上部流动导引件32后侧定位(位于上部流动导引件32与主法兰本体30之间)的流体间隙37。在本发明的实施方案中,流体间隙37相对较薄(约0.1英寸或更小),这样对于大致每分钟1加仑的流体流速以及密度和粘度值处于水的幅值范围内的流体而言,会产生小于3200的Reynold数,这表示在流体间隙内的层流和流体的有效使用。这种构造产生降低的流体使用和/或减小流体再循环器的容量(如果采用贮液槽/再循环器热交换器系统)。
流量法兰组件3还可以包括用于空气移除和逆流(counter-flow)热交换的、经过流体间隙37的底部/外部至顶部/内部的流。即,流体沿与气体在反应器容积中流动的方向相反的方向流过流体间隙。在一实施方案中,由可任选地穿过一个或多个供应管道(未示出)的供应通道41获得这种穿过流体间隙的流体路径。每一供应通道41在接近每一供应通道41的端部的位置具有一个或多个限流孔40。限流孔40充分地约束流动,使得相等流速的流体穿过每一供应通道,然后立即进入流体间隙37,在流体间隙37的外周周围产生均匀的流动传输。流体径向向内流过流体间隙37,并接着穿过第二组限流孔40,从第二组限流孔40内部将流体传输到返回通道42(可任选地经由一个或多个回流管道(未示出))。流体经由供应通道流入管45供应并经过流体流出管46返回。流体在流体间隙37内的流动特征产生反应器腔室容积33内提高的温度均匀性,这样提高了气体流型的均匀性和沉积均匀性。流体间隙37中的底部/外侧到顶部/内侧的流动模式导致逆流热交换和空气从间隙37的有效移除。
上部流动导引件的最外径D2处(即,邻近晶片承载片76的上部流动导引件的端部处)的上部流动导引件32与晶片承载片76的最外径d3处的晶片承载片上表面77之间的间隙43一般地抑制或防止喷射的气体在晶片承载片76上方的再循环。具体如图3-5所示,晶片承载片76被置于中心旋转轴75的顶部。在上部流动导引件32最接近晶片承载片76之处,上部流动导引件32的外径D2约等于晶片承载片的外径d3。此时,这两个部件之间的间隔H2处于最小值,并且间隙43便于抑制或防止喷射的气体在反应器腔室容积33内的再循环。例如,间隙的尺寸H2可以是约1.00英寸或更小,例如约0.25英寸或更小。从可调整的比例流喷射器组件5向下流动的气体在反应器腔室容积33内横向转向并径向向外流动。气体当到达间隙43时获得最大流速,并且气体一旦经过间隙43则开始在邻近间隙43的排气收集区44中膨胀并减速,从而防止废气混合物(即,已经离开位于晶片承载片76处和位于晶片承载片76上方的反应区域的气体)的向后再循环。
在本发明的优选实施方案中,具有膨胀锥形上部流动导引件32的反应器1还包含下部流动导引件72(以下将更具体地讨论)。下部流动导引件72防止气体再循环回到反应区中,改善从晶片承载片的外缘流动到排气口中的平顺性以实现更稳定的整体反应器流型,并减小晶片承载片76外缘处的热损失以实现更好的温度均匀性和改善的材料特征。
在图11-18和25中具体示出了本发明一实施方案中的可调整的比例流喷射器组件5。可调整的比例流喷射是这样的流喷射器,其从供应管接收多个气体流入流并散布或扩散这些气体流入流以实现均匀的流出流速,同时使气流离开前保持分离。可任选地,APFI 5还调节气体离开可调整的比例流喷射器组件时的温度。APFI 5通常为圆筒形(圆形面和竖直高度)并装配在流量法兰组件3内。尽管图中示出了圆筒形APFI,但是能够将APFI制成为任何形状,并且精确的形状一般由AFPI装配于其中的上部开口31的形状决定。例如,如果上部开口31具有正方形或矩形形状,则APFI具有相应的正方形或矩形形状使得其可以被装配。
可调整的比例流喷射器组件5一般包括支撑法兰51,其为与支撑法兰51和穿透支撑法兰51的气体腔室流入管或口54相装配的元件提供结构完整性。支撑法兰51还用于将整个可调整的比例流喷射器组件5装配到主法兰本体30。
APFI 5包括一个或多个气体腔室52。在一实施方案中,气体腔室50中的一个或多个可被机械加工成气体腔室机械加工件52并由多个气体腔室顶壁或顶面57和气体腔室底壁或底面58形成。气体腔室顶壁57能够被机械加工以形成如俯视图图16和17所示的不同区域。气体腔室50通过气体腔室竖直壁59与其它气体腔室50分隔,气体腔室竖直壁59从气体腔室顶壁57延伸到气体腔室底壁58,从而形成气体腔室50。可包含在气体腔室顶壁57中的一个或多个气体入口54将气体沿例如竖直方向(即,与气体腔室顶壁57和气体腔室底壁58大致垂直)运送到可调整的比例流喷射器组件5的一个或多个气体腔室50。
每一气体腔室50可以接收不同的气流,这些气体腔室中的一个或多个可以使气体扩散或分散并使第一气流与其它气流保持分离或使每一气流与其它气流保持分离,且在特定流出表面区域上产生均匀的流速。另外,每一气体腔室50可被构造为具有与其它气体腔室50相同或不同的形状。
例如,如图16所示(将支撑法兰51从图中移除),存在外部气体腔室50a和4个中间气体腔室50b和50c以及内部气体腔室50d。在一实施方案中,气体腔室50b接收第III族反应物,并且中间气体腔室50c接收第V族反应物。腔室50a-d由竖直壁59、气体腔室顶壁57(未示出)和气体腔室底壁58分隔。
APFI 5还可包括位于一个或多个气体腔室50下方的流体空腔60。流体空腔60可通过将流体空腔机械加工件53装配到气体腔室机械加工件52而形成。图17示出了可调整的比例流喷射器组件5的仰视图,其中示出了流体空腔机械加工件53的底面。气体腔室出口61可从气体腔室的底壁58经过流体空腔60、如经过管道管63延伸或穿透到反应器腔室容积33中。管道管63可具有相同或不同的内径以及相同或不同的外径。管道管63穿过流体空腔60,允许在将气体引入反应器腔室容积33中之前通过适当控制流过流体腔室60的流体温度而对气体温度进行调节。流体空腔60具有流体空腔出口66,其定位在与流体空腔流出管67连接的流体空腔60的大致中心处。另外,将流体空腔入口68设置为经过流体空腔流入管69朝向流体空腔60的外周。
在包含流体腔室扩散器65(在以下更详细讨论)的实施方案中,流体空腔出口68被定位在扩散器65周边的内侧,而流体空腔入口68定位在扩散器65周边的外侧。
可调整的比例流喷射器组件5可任选地具有一个或多个以下特征。在一实施方案中,气体出口孔61优选地具有比气体入口54小的尺寸(例如,可以存在从约100到约10,000个气体出口孔)。气体出口孔61的数量和延伸通过流体空腔60的管道管63的内径和长度取决于特定的气体组成、流速、温度和压力,且还受到气体腔室的底壁58的总表面积以及制造能力和成本的限制,难度和成本随着管道管63的外径和内径的减小以及相邻气体出口孔61的间距的减小而增加。然而,一般对于给定的气体腔室,所有管道管63的总横截面积优选地比气体入口54的横截面积大2至6倍。这种布置导致了与气体入口54相比直径较小的管道管63的更大的壁表面积以及相应的更大的流体剪切力和压力下降,使得在给定气体腔室的成组管道管上的压力下降(即,从气体腔室到反应器腔室容积33的压力下降)优选地从几托(Torr)到几十托。
气体腔室上壁57和气体腔室底壁可优选地为基本平行。所有气体腔室的上壁/上表面57可以为基本共面,或者处于不同的平面上。类似地,所有气体腔室50的气体腔室底壁58可以为共面或者处于不同的平面上。
可调整的比例流喷射器组件5可任选地包括位于气体腔室上壁57与气体腔室底壁58之间并与气体腔室上壁57和气体腔室底壁58基本平行的一个或多个中间扩散隔板55。当使用中间扩散隔板55时,在包括中间扩散隔板55的气体腔室50中形成上部气体腔室部分50a和下部气体腔室部分50b。例如,上部气体腔室部分50a一般可由气体腔室上壁57、中间扩散隔板55的上表面和任何侧壁59限定,并且下部气体腔室部分50b一般可由气体腔室底壁58、中间扩散隔板55的下表面和任何侧壁59限定。
每一气体腔室50的气体出口孔61连接到穿透流体空腔60的出口管道(优选为小直径管)63,出口管道63可附接或以其它方式连接到流体空腔机械加工件53,从而形成下部流体空腔壁,接近于其最下侧是反应器腔室容积33的边界面。出口管道63优选地具有与组合的成组气体腔室出口孔61匹配的孔模式。
可调整的比例流喷射器组件5的另一实施方案涉及具有均匀的径向流型的流体温度控制区。温度调节流体,如冷却流体,流入外部分布通道62中。在本发明的一实施方案中,流体空腔60具有流体空腔扩散器65。流体空腔扩散器65优选为高度略微大于流体空腔60的高度的、薄的、圆筒形金属片环,且优选地尽可能的薄。在优选实施方案中,圆筒形金属片环插入位于气体腔室机械加工件53的底面和流体空腔机械加工件52的上表面中的相对的圆形沟槽中,这两个沟槽深度的和优选等于流动扩散屏障超过流体空腔高度的额外高度,使得在位于流体空腔最外周的多个入口68处输送到流体空腔60的流体在流过位于流动扩散屏障65中的多个优选等间距的小孔64之前必须立即切向移动,从而产生从流体空腔60的最外周径向向内朝向位于流体空腔60的中心出口66处的单一出口66的均匀流动分布。小孔64起到限流孔的作用,其充分地约束流动以产生经过每一孔64的等同流动。
图25(a-c)图示了制造APFI的另一方法。并未示出前述的所有APFI元件。为了提高APFI制造和测试的便利性和效率,能够由可互换的模块或子组件组装APFI的元件。例如,气体出口孔子组件150可由上部板151、下部板152和多个管道63构造而成。上部板151构成上述气体腔室50的底壁58。下部板152构成前述的流体空腔机械加工件53的底壁58的一部分。
在该实施方案中,气体腔室机械加工件52被构造为接收多个气体出口孔子组件150,使得上部板151的上表面153齐平地装配到前述的气体腔室壁59的一个或多个下表面155。相邻气体出口孔子组件150的上部板151之间的接缝沿气体腔室壁59的给定下表面155的中心线行进,使得可以形成密封,防止因此形成的流体空腔63与任何气体腔室50之间的任何泄漏。
在图25(a-c)所示的实施方案中,相邻气体出口孔子组件150的下部板152之间以及给定气体出口孔子组件150的下部板152和与气体腔室机械加工件52一体的下部流体空腔壁157之间的接缝可以被密封,以防止流体空腔63与反应器腔室容积33之间的任何泄漏。在一实施方案中,尽管并不要求,但可以以这样的方式进行密封:使每一气体出口孔子组件150的下表面154与所有其它气体出口孔子组件150的下表面154和气体腔室机械加工件的下表面156齐平。因此,流体经过多个流体空腔入口68被运送到流体空腔63中并经过一个或多个流体空腔出口66离开,其中将流体空腔扩散器65(未示出)以与前述类似的方式定位。
本发明的另一实施方案涉及用于以一个或多个径向模式形成基本等间距的气体出口的模式。根据这些方法,布置圆形孔的一个或多个模式,使得孔彼此等距,例如以正方形或六边形模式布置。对于包括可调整的比例流喷射器组件气体腔室的径向区域,方法包括对孔进行分布,使得其彼此基本等距且与区域边界等距。该方法一般包括以下步骤:(1)将第一组孔以沿径向方向彼此之间等间距的方式布置在与第一径向区域边界邻近且平行的第一线上;(2)以机械加工件的中轴线处为顶点,确定位于离开中轴线第一径向距离的第一线上的第一点和与第一径向区域边界邻近且平行的第二线上的相应第二点之间的角度;(3)以气体腔室机械加工件的中心处为原点,确定位于邻近第一径向区域边界的给定半径处的第一孔与位于邻近第二相应径向区域边界的同一半径处的相应第二孔之间的弧的长度;(4)将该弧长除以期望的中心到中心孔间距;以及(5)将所得到的数字四舍五入至最近的整数。对组成步骤(1)中所述孔组的每一孔重复步骤(2)-(5)。该方法产生这样的孔模式:径向孔组之间具有相等间隔以及每一径向孔组中的孔具有近似相等的间距。该方法尤其可用于在小区域上以圆形或半圆形模式产生基本等距的孔组,与大区域上的模式相比,小区域中孔间距的不规则性更为显著。
反应器还可包括不具有区域分隔屏障的、具有可调整性的气体分布区域(如图17所示)。在该实施方案中,反应器包括两个或更多个气体入口管54以及在几何上用于产生经过多个孔61的可调整的出口流动模式的多个出口孔61。尽管不受理论约束,通过在不具有任何入口管54之间的任何分离的竖直分隔壁59的情况下增加或减小流到一个或多个入口管54的量,消除了通常由可以不具有任何出口流动孔的分隔壁下方的区域所产生的停滞区。
可调整的比例流喷射器组件5还可包括一个或多个密封的腔室顶部,例如一个或多个通过O形圈密封的腔室顶部,以进行清洁和/或隔板更换。在一优选实施方案中,气体腔室机械加工件52包括机械加工在分隔气体腔室的竖直壁59的顶面中的O形圈沟槽,其消除了气体腔室区上壁57。这是因为位于沿竖直壁的上表面的O形圈可直接密封到支撑法兰51的下表面或其它单一中间密封表面(而不是多个焊接表面)。这种构造允许气体腔室被打开和清洁或检查,并减少了所需元件的数量。
在另一实施方案中,如图18最佳示出的,可调整的比例流喷射器组件7包括具有真空屏障区的双O形圈密封。通过气体腔室机械加工件52和流体空腔机械加工件53中的O形圈沟槽92中的O形圈91产生双O形圈密封。一个O形圈91a被定位在气体腔室机械加工件52与主法兰本体31之间。第二个91b被定位在流体空腔机械加工件53与主法兰本体30之间。在APFI、主法兰本体31以及O形圈91之间形成真空空腔93。在主法兰本体31中包括差动(differential)密封真空口管94以产生和释放真空密封。该构造允许容易地移除可调整的比例流喷射器组件5,同时由于在两个O形圈密封之间的容积中产生的真空水平明显低于每一密封任一侧的真空水平,从而消除了O形圈弹性体材料的气体分子渗透。
图19-20和图3-5中示出了腔室组件7的一实施方案。腔室组件7具有反应器基板主体70。反应器基板主体经由反应器罐壁101连接至反应器罐顶部法兰100。反应器罐顶部法兰100与流量法兰组件3的主法兰本体30装配。基板主体70包含用于诸如中心旋转轴75(以下将更详细地讨论)的可用于CVD反应器中的多个元件的开口,基板排气管79;(目前并未包括在设计和其它图中,因此可能会产生困惑,但是本人并不介意我们是否丢弃它,因为我们可能在以后的设计中使用与之类似的对象);高流馈孔(feedthrough)90;以及旋转真空馈孔壳体88。
腔室组件7具有通常用于CVD反应器中的元件,例如包括热源和热反射罩以加热晶片承载片76的加热器组件。在所示实施方案中,一个或多个加热元件83被定位在晶片承载片76的下方,并且一个或多个热罩84被定位在加热元件83下方。例如,热源可以是优选地布置为同心圆模式以与晶片承载片的圆形区域匹配的用于辐射加热的灯丝或用于感应加热的铜管。可以使用其它类型的加热器组件以加热晶片承载片76。
腔室组件7具有下部流动导引件72。下部流动导引件72具有截头圆锥形的形状。锥形的下部流动导引件74具有内径d1和外径d2。优选地,内径d1略微大于晶片承载片76的外径d3,尽管内径d1能够大致等于、小于或大于晶片承载片76的外径d3。下部流动导引件72与晶片承载片76的顶面77大致对准。下部流动导引件72的外径d2大于内径d1,产生了向下方向的斜面。
在优选实施方案中,内径d1略微大于晶片承载片76的外径d3。下部流动导引件72的内径d1与晶片承载片76的外径之间的间距迫使从晶片承载片76与上部流动导引件32之间的间隙43喷射的气体逐渐膨胀,并抑制或防止喷射的气体在晶片承载片76的外缘下方再循环。优选地,下部流动导引件的内径d1与晶片承载片76的外径极为接近,以在二者之间提供窄的下部流动导引间隙,因为下部流动导引间隙越窄,则气体的喷射越有效,并且在反应器腔室容积33内对气体再循环的抑制或防止越强。在优选实施方案中,下部流动导引件72由石墨制成。
腔室组件7可包含下部流动导引件反射器74。下部流动导引件反射器74被定位在下部流动导引件72内并从晶片承载片76的外周延伸且沿向下方向成一角度。反射器74由金属薄片、优选为钼的薄片构造而成。反射器74用作将热向内反射并有助于使热在下部流动导引件72的表面上保持恒定。
在一实施方案中,下部流动导引件72可由一部分或一片式或多部分或多片式构造而成,例如由两片式下部流动导引件72构造而成。由于下部流动导引件72与晶片承载片76之间的紧密间隔并且由于晶片承载片76在加工过程中所达到的高温,在另一实施方案中,下部流动导引件76具有紧邻晶片承载片76的第一片,其由具有极高耐热性和与晶片承载片76材料的热膨胀系数大约相等或相似的热膨胀系数的材料(通常为石墨、蓝宝石或难熔金属)制成;以及具有第二片,其由并不具有如此的耐热性或热膨胀系数的材料制成,如由与构成第一片的材料相比比较不昂贵且更容易形成的材料制成。在优选实施方案中,第一片由石墨制成以提供适当的耐热性和与晶片承载片材料匹配的热膨胀系数。
下部流动导引件72可以部分或全部地为从保持晶片的晶片承载片76的表面的直径d3延伸的、晶片承载片76的延伸部,即,保持晶片的晶片承载片表面77的外缘轮廓。在该实施方案中,下部流动导引件76的全部或一部分为从优选地晶片承载片顶面77或者下表面78的外周延伸、或沿在晶片承载片顶面77与下表面78之间的外周的某点处延伸的晶片承载片的延伸部。在一具体实施方案中,下部流动导引件72具有第一部分,其是晶片承载片76的延伸部,例如处于距离晶片承载片外径76与上部流动导引件72之间的窄间隙40的最初几厘米范围内;以及第二片,其与晶片承载片76完全分离并被形成为邻近第一片的单独片。
用于反应器1的晶片承载片76可以是常规的一片式结构;然而,具有其它结构的实施方案也在本发明的范围内。例如,在本发明的一实施方案中,反应器可包括两片式晶片承载片76,其包括可移除的顶部(即保持晶片的盘(platter)或表面)和底部。可移除顶部可由优选为蓝宝石的多种材料制成,并且底部可由石墨构成并且还可包括用于加热的装置,如RF加热(用于底部的感应加热以及用于可移除顶部和位于可移除顶部的表面上的任何晶片的传导加热)。两片式晶片承载片可在需要时更换可移除顶部,而底部可以重复使用。
例如,在一实施方案中,两片式晶片承载片具有用于保持晶片的蓝宝石可移除顶部和支撑蓝宝石可移除顶部的石墨底部。蓝宝石顶部是无孔的并不会退化,常规使用的表面如SiC密封剂上会出现退化。蓝宝石可移除顶部还能够进行更严格地清洁(如不易于在石墨晶片承载片上进行的快速湿法化学刻蚀)。石墨底部片是热吸收体以将传导热传递到蓝宝石可移除顶部和位于可移除顶部的表面上的晶片中,所述晶片例如位于可以在可移除顶部的上表面中机械加工出的晶片凹口中。
在另一实施方案中,晶片承载片76与中心旋转轴75的一部分成一体(即,直接在其中机械加工),该轴75从晶片承载片76的底面78的中心向下延伸。中心轴75(或者,中心旋转轴75)向下延伸通过加热线圈并由适于加热的材料构成,例如由适于感应加热的材料构成。能够像加热晶片承载片76的主要部分那样加热该中心旋转轴75,并且提供该中心旋转轴75针对传导热损失的热障,该传导热损失可以在常规支撑心轴上发生。
用于晶片承载片76的中心旋转轴75可以是常规的一片式结构;然而,可以采用具有其它结构的实施方案。例如,在如图21-24所示的一实施方案中,采用了用于使晶片承载片旋转的多节段轴75,即包括一个或多个由相同材料或不同材料制成的节段的轴。在多节段实施方案中,至少一个节段的热传导率大大低于所用的其余轴节段的热传导率。多节段心轴尤其可与辐射加热器结合使用,但是本发明不必受限于此。
在图21-24所示的实施方案中,存在三个节段。轴上部节段81与晶片承载片76直接接触。轴上部节段81在晶片承载片76的底面78所放置的远端具有基座或法兰82。当采用辐射加热器时,上部节段优选由具有比多节段轴75的一个或多个其余节段低的热传导率的材料(如矾土或蓝宝石)制成。材料的这种选择产生最高可能的热传递抵抗性。多节段中心轴75与晶片承载片76之间的节段分界面能够被设计为具有最小的表面以进一步增强热传递抵抗性。这些特征改善了晶片承载片的中心区域附近的温度均匀性,并减小了反应器操作中的能量损失。
或者,当在反应器中采用感应加热器时,与晶片承载片接触的节段(轴上部节段81)向下延伸通过感应加热线圈。在该情况下,上部节段81由适于感应加热的材料制成。例如,当在反应器中采用感应加热器时,多节段中心轴75的上部节段81优选由石墨构造而成。
在一实施方案中,多节段轴75具有轴下部节段85,其由不易于以感应方式加热的材料(如蓝宝石)构造而成。轴上部节段81和轴下部节段85经由间隔件86连接,间隔件86优选由矾土构造而成。三个(或更多个)节段之间的分界面优选具有最小的表面接触面积,以产生最高可能的热传递抵抗性。可以通过在位于分界面位置的节段中包括经机械加工的凹陷87(如图24所示)以围绕节段端部的周边产生薄导轨96来减小表面面积。节段之间的接触仅发生在薄导轨96处而非节段端部的整个区域。节段优选通过开口式圆柱头螺钉(vented headcap screw)97紧固。
对于本领域技术人员而言,显然存在所公开发明的各种修改、调整和应用,并且本申请旨在覆盖这些实施方案。因此,尽管已经在某些优选实施方案的上下文中对本发明进行了描述,但是意图通过参照以下权利要求的范围衡量这些实施方案的全部范围。
Claims (27)
1.化学气相沉积反应器,包括:
流量法兰组件,其中,所述流量法兰组件包括主法兰本体和连接至所述主法兰本体的膨胀锥形上部流动导引件。
2.如权利要求1所述的化学气相沉积反应器,还包括定位在上部流动导引件与所述主法兰本体之间的流体间隙。
3.如权利要求2所述的化学气相沉积反应器,还包括第一通道和第二通道,所述第一通道在间隙的底部/外部部分与所述流体间隙流体联通,所述第二通道在间隙的顶部/内部部分与所述流体间隙流体联通,其中流体从一个通道流动到另一通道,从而影响上部流动导引件的外表面的温度控制。
4.如权利要求3所述的化学气相沉积反应器,其中所述流体沿与气体在流体导引空腔中流动的方向相反的方向流过所述流体间隙。
5.如权利要求1所述的化学气相沉积反应器,还包括连接至所述流量法兰组件顶部的流喷射器和连接至所述流量法兰组件底部的晶片承载片,并且其中所述膨胀锥形上部流动导引件具有与所述流喷射器的直径基本上相等的上部直径和与所述晶片承载片的直径基本上相等的下部直径,其中所述上部直径小于所述下部直径。
6.如权利要求5所述的化学气相沉积反应器,其中所述流喷射器为可调整的比例流喷射器并连接至位于所述流量法兰组件上的装配口,其中所述可调整的比例流喷射器包括一个或多个供应管、从所述供应管接收流入流的一个或多个气体腔室、位于所述气体腔室下方的流体空腔以及离开所述气体腔室并穿透所述流体空腔的一个或多个流出管道。
7.如权利要求5所述的化学气相沉积反应器,其中所述流喷射器具有用于使一个或多个气流在离开前保持分离的装置,其中组件具有用于调节气体离开组件时的温度的装置。
8.如权利要求1所述的化学气相沉积反应器,还包括连接至所述流量法兰组件的腔室组件,其中所述腔室组件包括锥形下部流动导引件。
9.化学气相沉积反应器,包括:
可调整的比例流喷射器组件;以及
连接至所述可调整的比例流喷射器组件的主流量法兰,其中所述可调整的比例流喷射器包括用于提供气流的一个或多个供应管、连接至所述供应管的多个气体腔室、位于所述多个气体腔室下方的流体空腔以及离开所述气体腔室并延伸通过所述流体腔室的多个流出管道。
10.如权利要求9所述的化学气相沉积反应器,其中所述可调整的比例流喷射器组件还包括:
将所述可调整的比例流喷射器组件装配至所述主流量法兰的支撑法兰;其中所述多个气体腔室的每一个接收单独的气流,其中所述气体腔室具有将所接收的气流与其它气流分离的一个或多个竖直壁。
11.如权利要求9所述的化学气相沉积反应器,其中所述多个气体腔室还包括连接至流出管道的一个或多个气体出口孔,其中所述出口孔的直径小于气体入口的直径。
12.如权利要求9所述的化学气相沉积反应器,其中所述多个气体腔室包括共面的上部壁和下部壁,其中所述上部壁和所述下部壁竖直地分离并基本上平行。
13.如权利要求12所述的化学气相沉积反应器,其中一个或多个所述气体腔室还在所述上部壁与所述下部壁之间包括中间扩散器隔板。
14.如权利要求9所述的化学气相沉积反应器,其中所述流体空腔包括流体空腔出口和流体空腔入口,所述流体空腔出口被定位在所述流体空腔的大致中心处并连接至流体空腔流出管,所述流体空腔入口连接至流体空腔流入管。
15.化学气相沉积反应器,包括:
流量法兰组件;
流喷射器,连接至所述流量法兰组件;
腔室组件,附接至所述流量法兰组件,
其中所述腔室组件包括围绕晶片承载片的锥形的下部流动导引件,并且所述下部流动导引件的内径大致等于或大于所述晶片承载片的外径。
16.如权利要求15所述的化学气相沉积反应器,其中所述下部流动导引件部分地或全部地为从保持晶片的所述晶片承载片的表面的直径处延伸的、所述晶片承载片的延伸部。
17.如权利要求16所述的化学气相沉积反应器,其中所述流量法兰组件包括上部流动导引件,并且所述晶片承载片的外径与所述上部流动导引件的下部直径大致相等。
18.如权利要求17所述的化学气相沉积反应器,其中所述晶片承载片与所述上部流动导引件之间的间隙约为1英寸或更小。
19.如权利要求15所述的化学气相沉积反应器,其中所述腔室组件在所述晶片承载片与所述下部流动导引件之间包括锥形的反射器。
20.化学气相沉积反应器,包括:
晶片承载片,以及
多节段中心旋转轴,包括上部轴节段和下部轴节段,其中所述上部轴节段连接至所述晶片承载片,并且一个节段的热传导率大大低于其余轴节段的热传导率。
21.如权利要求20所述的化学气相沉积反应器,还包括辐射热源,并且其中所述上部节段由低热传导率的材料制成,并且所述多节段轴的一个或多个其余节段由具有比所述上部节段高的热传导率的材料制成。
22.如权利要求19所述的化学气相沉积反应器,其中节段之间的分界面具有经机械加工的凹陷以减小节段之间的表面区域接触。
23.如权利要求20所述的化学气相沉积反应器,其中所述上部节段由高热传导率的材料制成,并且所述多节段轴的一个或多个其余节段由具有比所述上部节段低的热传导率的材料制成。
24.如权利要求22所述的化学气相沉积反应器,其中所述上部节段由石墨构成。
25.用于化学气相沉积反应器的流喷射器,包括:
用于提供气流的一个或多个供应管、连接至所述供应管的多个气体腔室和离开所述气体腔室的多个流出管道,其中对于给定的气体腔室,所有流出管道的总横截面积比所述供应管道的横截面积大2至6倍。
26.如权利要求25所述的流喷射器,其中,所述气体腔室包括气体腔室机械加工件,所述气体腔室机械加工件被构造为接收多个气体出口孔子组件。
27.如权利要求25所述的流喷射器,还在所述多个气体腔室下方包括流体空腔。
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2008
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- 2008-10-09 JP JP2010529021A patent/JP2011500961A/ja active Pending
- 2008-10-09 CN CN2008801060341A patent/CN101802254B/zh not_active Expired - Fee Related
- 2008-10-09 US US12/248,167 patent/US8778079B2/en not_active Expired - Fee Related
- 2008-10-09 KR KR1020107006204A patent/KR101177983B1/ko not_active IP Right Cessation
-
2014
- 2014-02-21 US US14/186,102 patent/US20140216347A1/en not_active Abandoned
- 2014-02-21 US US14/186,089 patent/US20140216341A1/en not_active Abandoned
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US11339478B2 (en) | 2016-09-19 | 2022-05-24 | King Abdullah University Of Science And Technology | Susceptor |
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Also Published As
Publication number | Publication date |
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US20120111271A1 (en) | 2012-05-10 |
WO2009049020A3 (en) | 2009-07-16 |
KR20100070333A (ko) | 2010-06-25 |
US8778079B2 (en) | 2014-07-15 |
CN101802254B (zh) | 2013-11-27 |
US20140216341A1 (en) | 2014-08-07 |
US20140216347A1 (en) | 2014-08-07 |
JP2011500961A (ja) | 2011-01-06 |
EP2215282A4 (en) | 2010-11-17 |
EP2215282B1 (en) | 2016-11-30 |
KR101177983B1 (ko) | 2012-08-29 |
WO2009049020A2 (en) | 2009-04-16 |
EP2215282A2 (en) | 2010-08-11 |
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