CN101730863B - 相机模块及其制造方法 - Google Patents

相机模块及其制造方法 Download PDF

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Publication number
CN101730863B
CN101730863B CN2008800213373A CN200880021337A CN101730863B CN 101730863 B CN101730863 B CN 101730863B CN 2008800213373 A CN2008800213373 A CN 2008800213373A CN 200880021337 A CN200880021337 A CN 200880021337A CN 101730863 B CN101730863 B CN 101730863B
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CN
China
Prior art keywords
image capture
capture device
substrate
optical element
face
Prior art date
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Expired - Fee Related
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CN2008800213373A
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English (en)
Chinese (zh)
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CN101730863A (zh
Inventor
哈普尼特·辛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanchang OFilm Optoelectronics Technology Co Ltd
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Flextronics International USA Inc
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Publication of CN101730863A publication Critical patent/CN101730863A/zh
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B19/00—Cameras
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Lens Barrels (AREA)
  • Studio Devices (AREA)
CN2008800213373A 2007-04-24 2008-04-24 相机模块及其制造方法 Expired - Fee Related CN101730863B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92594607P 2007-04-24 2007-04-24
US60/925,946 2007-04-24
PCT/US2008/005289 WO2008133943A1 (en) 2007-04-24 2008-04-24 Small form factor modules using wafer level optics with bottom cavity and flip chip assembly

Publications (2)

Publication Number Publication Date
CN101730863A CN101730863A (zh) 2010-06-09
CN101730863B true CN101730863B (zh) 2011-12-28

Family

ID=39925980

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800213373A Expired - Fee Related CN101730863B (zh) 2007-04-24 2008-04-24 相机模块及其制造方法

Country Status (5)

Country Link
US (2) US8605208B2 (enExample)
JP (2) JP2010525412A (enExample)
CN (1) CN101730863B (enExample)
CA (1) CA2685080A1 (enExample)
WO (1) WO2008133943A1 (enExample)

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JP2010525413A (ja) * 2007-04-24 2010-07-22 フレックストロニクス エーピー エルエルシー ウエハーレベル光学部品を用いた自動焦点／ズームモジュール
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US9118825B2 (en) * 2008-02-22 2015-08-25 Nan Chang O-Film Optoelectronics Technology Ltd. Attachment of wafer level optics
CN101968563A (zh) * 2009-07-27 2011-02-09 昆山钜亮光电科技有限公司 回流焊级堆叠镜头组件
US9419032B2 (en) * 2009-08-14 2016-08-16 Nanchang O-Film Optoelectronics Technology Ltd Wafer level camera module with molded housing and method of manufacturing
JP5445030B2 (ja) * 2009-10-27 2014-03-19 凸版印刷株式会社 カメラモジュール及びその製造方法
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CN103780803A (zh) * 2012-10-23 2014-05-07 鸿富锦精密工业（深圳）有限公司 取像模组
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US8605208B2 (en) 2013-12-10
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JP2010525412A (ja) 2010-07-22
US20100053423A1 (en) 2010-03-04
CA2685080A1 (en) 2008-11-06
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WO2008133943A8 (en) 2010-04-08
JP5814962B2 (ja) 2015-11-17

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