CN100581216C - 超小型摄像模块及其制造方法 - Google Patents

超小型摄像模块及其制造方法 Download PDF

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CN100581216C
CN100581216C CN200610095790A CN200610095790A CN100581216C CN 100581216 C CN100581216 C CN 100581216C CN 200610095790 A CN200610095790 A CN 200610095790A CN 200610095790 A CN200610095790 A CN 200610095790A CN 100581216 C CN100581216 C CN 100581216C
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CN1897645A (zh
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中條博则
吉川浩史
佐佐木道夫
堀哲浩
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Toshiba Corp
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Abstract

一种摄像装置，构成该摄像装置的半导体芯片设置在基片上，包含连接端子和摄像元件部分。具有透镜部分的透镜薄板设置在半导体芯片上。沟至少设置在基片上，其中露出连接端子。导体图案形成在沟内，一端与连接端子电连接。

Description

超小型摄像模块及其制造方法
技术领域
本发明是关于内置了如CCD或CMOS传感器的带透镜的超小型摄像模块及其制造方法。
背景技术
通常，小型摄像模块具有，如摄像传感器、IR(红外线)截止滤波器、基片、无源器件、光学透镜以及光圈。
近几年，摄像模块的小型化需求逐渐增加。小型化的关键在于以下两点。
(1)传感器芯片以及使用的无源器件的小型化
(2)传感器像素的缩小和光学系统的薄型化
(1)主要是横向的小型化，随着器件的小型化和安装技术的提高，能够实现。特别是使用了与传感器芯片同样大小的基片的安装技术，例如芯片级封装(CSP)受到人们的瞩目。另外，(2)主要是纵向的小型化。通常，由于必须在传感器上层叠IR截止滤波器、光圈、光学透镜等光学部件，所以难以实现薄型化。
另外，特开2001-238103中公开了以往作为摄像模块的摄像装置。该摄像装置中，在基片上设置了摄像元件，在该摄像元件上设置了具有耦合透镜部分的光学元件。接着，用引线将摄像元件和基片电连接。然后用树脂密封，使基片、摄像元件及光学元件一体化，并露出耦合透镜部分。
但是，以往的摄像模块中必须有支撑透镜的镜筒及透镜支架、支撑IR截止滤波器的支架、保持由基片、摄像元件及光学元件构成的层叠体的筐体、和密封该层叠体的密封树脂等。而且，镜筒及透镜支架、支撑IR截止滤波器的支架、基片、摄像元件及光学元件是独立的部件。由于这些部件非常小，所以不容易组装和装配。而且在组装这些部件时，难以小型化及薄型化为所需的尺寸。因此，人们希望有小且薄的高性能摄像模块及其制造方法。
发明内容
本发明的目的在于提供小且薄的高性能摄像模块及其制造方法。
根据本发明第1实施方式，提供一种摄像装置，具有：基片；半导体芯片，设置在上述基片上，具有连接端子和摄像元件部分；透镜薄板，具有设置在上述半导体芯片上的透镜部分；沟，至少设置在上述基片上，露出上述连接端子；以及导体图案，形成在上述沟内，上述导体图案的一端与上述连接端子电连接。
根据本发明第2实施方式，提供一种摄像装置，具有：半导体芯片，其表面上具有第1连接端子和摄像元件部分，背面具有第2连接端子，内部具有连接上述第1连接端子和第2连接端子的导体；和透镜薄板，具有设置在上述半导体芯片的上述表面上的透镜部分。
根据本发明第3实施方式，提供一种摄像装置的制造方法，包括：以下步骤：分别准备基片、含多个芯片的半导体晶片、具有多个透镜部分的透镜薄板，其中，上述多个芯片分别具有摄像元件部分及连接端子；层叠上述基片、上述半导体晶片及上述透镜薄板，形成层叠部件，其中，在上述基片与上述半导体晶片之间、上述半导体晶片与上述透镜薄板之间形成粘接层；至少在上述基片上形成露出上述多个芯片的连接端子的沟；以及将上述层叠部件按照每个上述芯片进行切割(划片)。
附图说明
图1为示意性地表示第1实施例的摄像模块制造工序的平面图。
图2为示意性地表示第1实施例的半导体芯片的平面图。
图3A、3B为示意性地表示第1实施例的摄像模块的图，图3A为切割之前的剖面图、图3B为切割之后的剖面图。
图4为表示第1实施例的摄像模块制造工序的流程图。
图5为示意性地表示第2实施例的摄像模块的剖面图。
图6为示意性地表示第3实施例的摄像模块的剖面图。
图7为示意性地表示第1至第3实施例的变形例的平面图。
图8为示意性地表示第1至第3实施例的变形例的剖面图。
具体实施方式
下面参照附图说明本发明的实施方式。
图1至图4表示本发明的第1实施例。首先，如图1、图4所示，准备基片10、半导体晶片20、透镜阵列薄板30(S11、S12、S13)。基片10例如由陶瓷、玻璃、树脂等构成，大小和直径与半导体晶片大致相同。
半导体晶片20上形成有多个芯片21，这些芯片21包括如CCD或CMOS传感器之类的摄像元件及其周边电路。图2表示各芯片的平面图。芯片21的表面的大致中央部分形成有感光像素区域22。该芯片21的例如背面的边缘部分形成有多个连接端子(电极)23。
透镜阵列薄板30具有如由凸透镜构成的、作为透镜部分的多个摄像透镜31。可以用相同的材料形成该透镜阵列薄板30和摄像透镜31，也可以用不同的材料形成。用相同的材料形成两者时，可以用成型、刻蚀或析出等方法在薄板上形成摄像透镜31。另外，用不同的材料形成薄板和摄像透镜31时，可以在作为薄板的玻璃、热固性树脂、透光性陶瓷等光学材料的表面上用光学用透明树脂、如酚醛类树脂或者丙烯酸类树脂形成凸透镜类的摄像透镜31。在透镜阵列薄板30中，摄像透镜31与各芯片的感光像素区域22对应设置。
IR截止滤波器形成在透镜表面上时，可以在透镜阵列薄板30的表面上形成IR截止滤波器。而且，形成遮光光圈时，可以使用如喷镀或者印刷等方法，在透镜阵列薄板30的如表面及/或背面上与摄像透镜31对应的区域之外的区域，形成遮光膜。
然后，隔着作为粘接层的环氧树脂层40，依次粘合这些基片10、半导体晶片20透镜阵列薄板30，形成层叠部件50(S14)。即，将半导体晶片20隔着环氧树脂层40粘贴在基片10上，将透镜阵列薄板30隔着环氧树脂层40粘贴在半导体晶片20上。然后如图3A所示，在基片10的背面，与各芯片21的连接端子23对应地形成例如剖面为V形的沟11(S15)。形成沟11后，各芯片21的连接端子23从沟11内露出。
然后，例如使用溅射等方法，在层叠部件50的背面，即基片10的背面及沟11的侧面形成多个导体图案51(S16)。这些导体图案51的一端分别与从沟11内露出的连接端子23电连接。
接着，在备导体图案51的另一端，即形成在基片10背面的部分上分别形成球状凸点12(S17)。
然后，沿沟11的中心切割层叠部件50，像图3B那样完成各传感器模块，即摄像模块60(S18)。
图3B表示形成后的摄像模块60的剖面结构。该摄像模块包括：基片10，具有多个球状凸点12；半导体芯片21，设置在基片10上，具有从沟11中露出的连接端子23，且包含感光像素区域22；透镜薄板32，设置在半导体芯片21上，具有摄像透镜31；导体图案51，形成在基片10上，将连接端子23与球状凸点12电连接。
另外，在透镜薄板32的表面，例如在IR截止滤波器33、摄像透镜31的形成区域之外的区域形成有遮光膜34。而且，在透镜薄板30的背面，在与摄像透镜31的形成区域对应区域之外的区域形成有遮光膜35。
根据上述第1实施例，在基片10上层叠形成了多个芯片21的半导体晶片20，在半导体晶片20上层叠形成了多个摄像透镜31的透镜阵列薄板30，在此状态下形成导体图案51，然后进行切割，形成摄像模块。所以，与以往的摄像模块不同，将构成摄像模块的各部件以独立状态进行组装的工序就可以省去。因此，由简单的制造工序就能够容易实现超小型且高性能的摄像模块。而且与以往相比，能够减少部件数量，因此能够实现摄像模块的薄型化。
图5表示第2实施例，与第1实施例相同的部分用相同的符号表示。第1实施例中，各芯片21的连接端子23形成在半导体晶片20的背面。第2实施例中，连接端子23a形成在半导体晶片20的表面。这时，沟11a形成在基片10和半导体晶片20(芯片21)内，沟11a中露出形成在半导体晶片20表面上的连接端子23a。导电图案51在沟11a内一直形成到半导体晶片20的表面，与连接端子23a连接。如此形成后，沿沟11的中心进行切割。
第2实施例的制造方法与第1实施例一样，在图4所示的制造工序中，只是沟11的深度不同。第2实施例也能够得到与第1实施例同样的效果。
图6表示第3实施例，与第1实施例相同的部分用相同的符号表示。第3实施例与第1、第2实施例不同，没有基片10。图6中，半导体晶片20(芯片21)的表面上有第1连接端子23a，背面有第2连接端子23b。第2连接端子23b形成在与第1连接端子23a对应的位置上，面积比第1连接端子23a大。半导体晶片20内形成有将第1连接端子23a和第2连接端子23b电连接起来的导体23c。在位于第1连接端子23a与第2连接端子23b之间的半导体晶片20内形成连接孔21a，通过在该连接孔21a内例如埋入导体金属，形成该导体23c。或者通过在连接孔21a内镀上导体金属，形成导体23c。第2连接端子23b上分别形成有球状凸点12。
第3实施例的制造方法中，除了基片10的粘合工序以外，半导体晶片20和透镜阵列薄板30的粘合工序与第1实施例相同。即，如图1、图4所示，准备半导体晶片20和透镜阵列薄板30。在该半导体晶片20的表面上，在每个芯片21上形成有感光像素区域22和多个第1连接端子23a，在背面上形成有第2连接端子23b，在半导体晶片20内形成有导体23c。透镜阵列薄板30隔着作为粘接层的环氧树脂层40粘贴在该半导体晶片20的表面上，形成层叠部件。接着在第2连接端子23b上形成球状凸点12。然后进行切割，完成摄像模块。
在透镜阵列薄板30耐得住高温处理的情况下，在粘合前，也可以在半导体晶片20上只形成感光像素区域22和多个第1连接端子23a，在半导体晶片20上粘合了透镜阵列薄板30后，依次形成第2连接端子23b、导体23c、球状凸点12。
根据第3实施例，由于不像第1、第2实施例那样具有基片10，因此制造工序可以变得更加简单，同时也可以形成比第1、第2实施例薄的摄像模块。
而且上述第1至第3实施例中，摄像透镜31可以是如衍射透镜等的平面透镜。
另外，第1至第3实施例中，透镜阵列薄板30粘合在半导体晶片20上，但并不限定于此。例如图7所示，可以将透镜阵列薄片30按照每个摄像透镜31，切割为芯片21的尺寸，将分割后的透镜薄板32分别粘合在半导体晶片20的各芯片21上。这样，将透镜薄板32粘合在半导体晶片20的各芯片21上后，进行与上述第1至第3实施例相同的制造工序。这样的制造方法，与以往将所有部件独立后进行组装的方法相比，制造工序变得容易，而且能够实现摄像模块的薄型化。
而且如图3所示，在透镜薄板32的表面上形成IR截止滤波器33、遮光膜34，在透镜薄板30的背面形成遮光膜35，但并不限定于此。
图8表示第1至第3实施例的变形例，表示的是适用于第2实施例的变形例。图8中，透镜薄板32的表面及背面都没有形成IR截止滤波器和遮光膜。摄像模块60的上部安装了由遮光材料形成的支架70。在与该支架70的与摄像透镜31对应的位置上形成有开口71。该开口71的直径例如与摄像透镜31的直径大致相同，或者比摄像透镜31的直径小。设置了IR截止滤波器72，以封住该开口71。难以在摄像透镜31上形成IR截止滤波器和遮光膜时，该结构就可以派上用场，该结构可以得到与第1至第3实施例同样的效果。
对于本领域的普通技术人员来说，本发明的其他优点和改型是十分明显的。因此，本发明的范围并不局限于上面具体描述的代表性实施例。只要不背离由所附的权利要求书及其等价物所限定的总的发明构思的范围，就可以进行多种变形。

Claims (18)

1.一种摄像装置，具有：
基片；
半导体芯片，设置在上述基片上，具有连接端子和摄像元件部分；
透镜薄板，具有设置在上述半导体芯片上的透镜部分，上述透镜薄板具有设置在上述透镜部分之外的部分上的遮光膜；
沟，至少设置在上述基片上，露出上述连接端子；以及
导体图案，形成在上述沟内，上述导体图案的一端部与上述连接端子电连接。
2.根据权利要求1所述的摄像装置，还具有：分别设置在上述基片与上述半导体芯片之间以及上述半导体芯片与上述透镜薄板之间的粘接层。
3.根据权利要求1所述的摄像装置，其中，上述粘接层是环氧树脂层。
4.根据权利要求1所述的摄像装置，其中，上述连接端子设置在上述半导体芯片的背面。
5.根据权利要求1所述的摄像装置，其中，上述连接端子设置在上述半导体芯片的表面，上述沟形成在上述基片及上述半导体芯片上。
6.根据权利要求1所述的摄像装置，还具有形成在上述导体图案的另一端部的凸点。
7.一种摄像装置，具有：
半导体芯片，其表面上具有第1连接端子和摄像元件部分，背面具有第2连接端子，内部具有连接上述第1连接端子和第2连接端子的导体；以及
透镜薄板，具有设置在上述半导体芯片的上述表面上的透镜部分，上述透镜薄板具有设置在上述透镜部分之外的部分上的遮光膜。
8.根据权利要求7所述的摄像装置，还具有设置在上述半导体芯片和上述透镜薄板之间的粘接层。
9.根据权利要求7所述的摄像装置，其中，上述粘接层是环氧树脂层。
10.根据权利要求7所述的摄像装置，还具有形成在上述第2连接端子上的凸点。
11.一种摄像装置的制造方法，包括以下步骤：
分别准备基片、含多个芯片的半导体晶片、以及具有多个透镜部分的透镜薄板，其中，上述多个芯片分别具有摄像元件部分及连接端子，上述透镜薄板具有设置在上述透镜部分之外的部分上的遮光膜；
层叠上述基片、上述半导体晶片及上述透镜薄板，形成层叠部件，其中，在上述基片与上述半导体晶片之间和在上述半导体晶片与上述透镜薄板之间形成粘接层；
至少在上述基片上形成露出上述多个芯片的连接端子的沟；以及
将上述层叠部件按照每个上述芯片进行切割。
12.根据权利要求11所述的摄像装置的制造方法，还包括以下步骤：在上述沟内形成导体图案，上述导体图案的一个端部与上述连接端子连接。
13.根据权利要求12所述的摄像装置的制造方法，还包括以下步骤：在上述导体图案的另一端部上形成凸点。
14.根据权利要求11所述的摄像装置的制造方法，其中，上述粘接层为环氧树脂层。
15.根据权利要求11所述的摄像装置的制造方法，其中，上述连接端子设置在上述半导体芯片的背面。
16.根据权利要求11所述的摄像装置的制造方法，其中，上述连接端子设置在上述半导体芯片的表面，上述沟形成在上述基片和上述半导体芯片上。
17.根据权利要求11所述的摄像装置的制造方法，其中，上述基片与半导体晶片的直径大致相同。
18.根据权利要求11所述的摄像装置的制造方法，其中，上述透镜薄板的上述多个透镜部分，独立地层叠在上述半导体晶片的多个芯片的每一个上。
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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2902530A1 (fr) * 2006-06-19 2007-12-21 St Microelectronics Rousset Procede de fabrication de lentilles, notamment pour imageur comprenant un diaphragme
US8456560B2 (en) * 2007-01-26 2013-06-04 Digitaloptics Corporation Wafer level camera module and method of manufacture
CA2685080A1 (en) * 2007-04-24 2008-11-06 Flextronics Ap Llc Small form factor modules using wafer level optics with bottom cavity and flip-chip assembly
JP2010525413A (ja) * 2007-04-24 2010-07-22 フレックストロニクス エーピー エルエルシー ウエハーレベル光学部品を用いた自動焦点／ズームモジュール
KR100860308B1 (ko) * 2007-06-05 2008-09-25 삼성전기주식회사 카메라 모듈 패키지 및 그 제조방법
JP4693827B2 (ja) * 2007-09-20 2011-06-01 株式会社東芝 半導体装置とその製造方法
JP2009092860A (ja) 2007-10-05 2009-04-30 Panasonic Corp カメラモジュールおよびカメラモジュールの製造方法
WO2009079498A2 (en) * 2007-12-17 2009-06-25 Omnivision Technologies, Inc. Reflowable camera module with integrated flash
US9118825B2 (en) * 2008-02-22 2015-08-25 Nan Chang O-Film Optoelectronics Technology Ltd. Attachment of wafer level optics
JP5223917B2 (ja) * 2008-04-03 2013-06-26 コニカミノルタホールディングス株式会社 撮像装置、および撮像装置の製造方法
KR20100130616A (ko) 2008-04-08 2010-12-13 코니카 미노루따 호르딩구스 가부시끼가이샤 액추에이터 어레이 시트
KR20090108233A (ko) * 2008-04-11 2009-10-15 삼성전자주식회사 카메라 모듈의 제조 방법, 이에 의해 제작된 카메라 모듈및 상기 카메라 모듈을 포함하는 전자 시스템
KR101003636B1 (ko) 2008-05-23 2010-12-23 삼성전기주식회사 렌즈 웨이퍼와 그 제조방법 및 이를 이용한 카메라 모듈
WO2010038640A1 (ja) 2008-10-01 2010-04-08 コニカミノルタホールディングス株式会社 撮像ユニットおよび撮像装置
JP5422986B2 (ja) * 2008-12-10 2014-02-19 コニカミノルタ株式会社 駆動装置および撮像装置
JP2010166004A (ja) * 2009-01-19 2010-07-29 Panasonic Corp 半導体装置及びその製造方法
JP2010245292A (ja) * 2009-04-06 2010-10-28 Panasonic Corp 光学デバイス、電子機器、及びその製造方法
US9419032B2 (en) * 2009-08-14 2016-08-16 Nanchang O-Film Optoelectronics Technology Ltd Wafer level camera module with molded housing and method of manufacturing
JP5352392B2 (ja) * 2009-09-14 2013-11-27 富士フイルム株式会社 ウェハレベルレンズアレイの製造方法、ウェハレベルレンズアレイ、レンズモジュール及び撮像ユニット
TWI457631B (zh) * 2009-12-25 2014-10-21 Hon Hai Prec Ind Co Ltd 鏡頭模組之製備方法
WO2013028616A2 (en) * 2011-08-19 2013-02-28 Imi Usa, Inc. Flip-chip bonded imager die
US10178946B2 (en) 2014-09-08 2019-01-15 Location Labs, Inc. Oral monitor
CN106131481B (zh) * 2016-06-24 2018-11-13 上海理工大学 车载多孔径红外夜视仪及其制造方法
US11394861B2 (en) * 2017-08-07 2022-07-19 Ningbo Sunny Opotech Co., Ltd. Camera module, manufacturing method thereof and corresponding intelligent terminal

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274456A (en) * 1987-12-28 1993-12-28 Hitachi, Ltd. Semiconductor device and video camera unit using it and their manufacturing method
EP0634800B1 (en) * 1993-07-12 1997-02-05 Philips Electronics Uk Limited An imaging device
CN1349120A (zh) * 2000-10-17 2002-05-15 佳能株式会社 图象摄取设备
WO2002069618A2 (de) * 2001-02-28 2002-09-06 Infineon Technologies Ag Digitale kamera mit einem empfindlichen sensor
WO2005041561A1 (en) * 2003-10-27 2005-05-06 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL123207A0 (en) * 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
JP3651577B2 (ja) 2000-02-23 2005-05-25 三菱電機株式会社 撮像装置
US6384397B1 (en) * 2000-05-10 2002-05-07 National Semiconductor Corporation Low cost die sized module for imaging application having a lens housing assembly
KR100370116B1 (ko) * 2001-01-15 2003-01-30 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조방법
JP4000507B2 (ja) 2001-10-04 2007-10-31 ソニー株式会社 固体撮像装置の製造方法
US6607941B2 (en) * 2002-01-11 2003-08-19 National Semiconductor Corporation Process and structure improvements to shellcase style packaging technology
US7340181B1 (en) * 2002-05-13 2008-03-04 National Semiconductor Corporation Electrical die contact structure and fabrication method
TWI227550B (en) * 2002-10-30 2005-02-01 Sanyo Electric Co Semiconductor device manufacturing method
JP4544876B2 (ja) * 2003-02-25 2010-09-15 三洋電機株式会社 半導体装置の製造方法
JP3800335B2 (ja) * 2003-04-16 2006-07-26 セイコーエプソン株式会社 光デバイス、光モジュール、半導体装置及び電子機器
US7180149B2 (en) * 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
JP2005332917A (ja) * 2004-05-19 2005-12-02 Sanyo Electric Co Ltd 光電変換装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274456A (en) * 1987-12-28 1993-12-28 Hitachi, Ltd. Semiconductor device and video camera unit using it and their manufacturing method
EP0634800B1 (en) * 1993-07-12 1997-02-05 Philips Electronics Uk Limited An imaging device
CN1349120A (zh) * 2000-10-17 2002-05-15 佳能株式会社 图象摄取设备
WO2002069618A2 (de) * 2001-02-28 2002-09-06 Infineon Technologies Ag Digitale kamera mit einem empfindlichen sensor
WO2005041561A1 (en) * 2003-10-27 2005-05-06 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module

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